MSD6150RLRA [ONSEMI]
DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92, CASE 29-11, TO-226AA, 3 PIN, Signal Diode;
| 型号： | MSD6150RLRA |
| 厂家： | 
ONSEMI |
| 描述： | DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92, CASE 29-11, TO-226AA, 3 PIN, Signal Diode 二极管 |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
MSD6150
Dual Diode
Common Anode
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
70
Unit
Vdc
Reverse Voltage
V
R
1
2
3
Peak Forward Recurrent Current
I
200
500
mAdc
mAdc
F
Peak Forward Surge Current
I
FM(surge)
CASE 29–11, STYLE 4
TO–92 (TO–226AA)
(Pulse Width = 10 µsec)
(1)
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
(1)
Operating and Storage Junction
Temperature Range
T , T
–55 to +135
°C
J
stg
3 Anode
Cathode 1
2 Cathode
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
(I = 100 µAdc)
V
(BR)
70
—
—
Vdc
(BR)
Reverse Current
(V = 50 Vdc)
R
I
—
—
—
—
—
0.80
5.0
—
0.1
1.0
8.0
100
µAdc
Vdc
pF
R
Forward Voltage
(I = 10 mAdc)
F
V
F
Capacitance
(V = 0)
R
C
Reverse Recovery Time
t
ns
rr
(I = I = 10 mAdc, V = 5.0 Vdc, i = 1.0 mAdc)
F
R
R
rr
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: P = 1.0 W @ T = 25°C,
D
C
Derate above 8.0 mW/°C, P = 10 W @ T = 25°C, Derate above 80 mW/°C, T , T = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.
D
C
J
stg
Semiconductor Components Industries, LLC, 2001
954
Publication Order Number:
March, 2001 – Rev. 1
MSD6150/D
MSD6150
TYPICAL CHARACTERISTICS
Curves Applicable to Each Cathode
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = -ā40°C
A
T = 85°C
A
0.1
T = 55°C
1.0
0.1
A
T = 25°C
A
0.01
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Leakage Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Capacitance
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