MSR860 [ONSEMI]

SWITCHMODE Soft Recovery Power Rectifier; SWITCHMODE软恢复电力整流器
MSR860
型号: MSR860
厂家: ONSEMI    ONSEMI
描述:

SWITCHMODE Soft Recovery Power Rectifier
SWITCHMODE软恢复电力整流器

文件: 总5页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MSR860  
SWITCHMODEt Soft  
Recovery Power Rectifier  
Plastic TO−220 Package  
These state−of−the−art devices are designed for use as free wheeling  
diodes in variable speed motor control applications and switching  
power supplies.  
http://onsemi.com  
Features  
SOFT RECOVERY  
POWER RECTIFIER  
8.0 AMPERES, 600 VOLTS  
Soft Recovery with Guaranteed Low Reverse Recovery Charge  
(Q ) and Peak Reverse Recovery Current (I  
)
RR  
RRM  
150°C Operating Junction Temperature  
Popular TO−220 Package  
Epoxy meets UL 94 V−0 @ 0.125 in  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
Pb−Free Package is Available*  
1
4
3
4
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.9 Grams (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
TO−220AC  
CASE 221B  
Leads Readily Solderable  
Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
STYLE 1  
1
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
600  
V
V
RWM  
V
R
Average Rectified Forward Current  
I
8.0  
16  
A
A
A
O
(Rated V , T = 125°C)  
R
C
Peak Repetitive Forward Current (Rated  
I
AY WWG  
MSR860  
KA  
FRM  
V , Square Wave, 20 kHz, T = 125°C)  
R
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
FSM  
Storage/Operating Case Temperature  
Operating Junction Temperature  
T
, T  
−65 to +150  
−65 to +150  
°C  
°C  
stg  
C
T
J
A
Y
WW  
G
KA  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
= Diode Polarity  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
1.6  
72.8  
°C/W  
q
q
JC  
R
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MSR860  
TO−220  
50 Units/Rail  
50 Units/Rail  
MSR860G  
TO−220  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MSR860/D  
MSR860  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
T = 25°C  
T = 150°C  
Maximum Instantaneous Forward Voltage (Note 1)  
V
F
V
J
J
(I = 8.0 A)  
F
1.7  
1.4  
1.3  
1.1  
Typical  
T = 25°C  
T = 150°C  
Maximum Instantaneous Reverse Current  
I
R
mA  
J
J
(V = 600 V)  
R
10  
2.0  
1000  
80  
Typical  
T = 25°C  
T = 125°C  
Maximum Reverse Recovery Time (Note 2)  
t
rr  
ns  
J
J
(V = 400 V, I = 8.0 A, di/dt = 200 A/ms)  
R
F
120  
95  
190  
125  
Typical  
Typical Recovery Softness Factor  
(V = 400 V, I = 8.0 A, di/dt = 200 A/ms)  
s = t /t  
2.5  
5.8  
350  
3.0  
8.3  
700  
b
a
R
F
Maximum Peak Reverse Recovery Current  
(V = 400 V, I = 8.0 A, di/dt = 200 A/ms)  
I
A
RRM  
R
F
Maximum Reverse Recovery Charge  
(V = 400 V, I = 8.0 A, di/dt = 200 A/ms)  
Q
nC  
RR  
R
F
1. Pulse Test: Pulse Width 380 ms, Duty Cycle 2%  
2. T measured projecting from 25% of I  
to zero current  
RR  
RRM  
TYPICAL ELECTRICAL CHARACTERISTICS  
100  
100  
T = 150°C  
J
125°C  
10  
1
100°C  
25°C  
T = 150°C  
J
0.1  
100°C  
100  
200  
300  
400  
500  
600  
V , REVERSE VOLTAGE (VOLTS)  
R
25°C  
10  
Figure 2. Typical Reverse Current  
14  
12  
10  
8
dc  
SQUARE WAVE  
6
4
RATED V APPLIED  
R
2
1
0
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
1.7  
1.9  
0
40  
80  
120  
160  
V , FORWARD VOLTAGE DROP (VOLTS)  
F
T , CASE TEMPERATURE (°C)  
C
Figure 1. Typical Forward Voltage  
Figure 3. Current Derating, Case  
http://onsemi.com  
2
 
MSR860  
TYPICAL ELECTRICAL CHARACTERISTICS  
16  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
14  
12  
10  
SQUARE WAVE  
dc  
dc  
8
6
4
2
0
SQUARE WAVE  
RATED V APPLIED  
R
T = 150°C  
J
0
40  
80  
120  
160  
500  
500  
0
2
4
6
8
10  
12  
14  
T , AMBIENT TEMPERATURE (°C)  
I
, AVERAGE FORWARD CURRENT (AMPS)  
A
F(AV)  
Figure 4. Current Derating, Ambient  
Figure 5. Power Dissipation  
250  
200  
150  
100  
160  
140  
120  
100  
80  
T = 25°C  
R
J
V = 400 V  
T = 125°C  
J
V = 400 V  
R
I = 16 A  
F
I = 16 A  
F
8 A  
4 A  
8 A  
4 A  
60  
40  
50  
0
20  
0
100  
200  
300  
400  
100  
200  
300  
400  
500  
dI /dt (A/mS)  
F
dI /dt (A/mS)  
F
Figure 7. Typical Reverse Recovery Time  
Figure 6. Typical Reverse Recovery Time  
14  
12  
10  
8
8
I = 16 A  
F
I = 16 A  
F
6
4
8 A  
4 A  
8 A  
4 A  
6
4
2
0
T = 25°C  
T = 125°C  
J
V = 400 V  
J
V = 400 V  
2
R
R
0
100  
200  
300  
dI /dt (A/mS)  
400  
100  
200  
300  
400  
500  
dI /dt (A/mS)  
F
F
Figure 9. Typical Peak Reverse Recovery  
Current  
Figure 8. Typical Peak Reverse Recovery  
Current  
http://onsemi.com  
3
MSR860  
TYPICAL ELECTRICAL CHARACTERISTICS  
900  
800  
700  
350  
300  
250  
200  
150  
100  
I = 16 A  
F
I = 16 A  
F
600  
500  
400  
300  
200  
100  
0
8 A  
4 A  
8 A  
4 A  
T = 125°C  
T = 25°C  
R
J
V = 400 V  
J
V = 400 V  
50  
0
R
100  
200  
300  
400  
500  
100  
200  
300  
400  
500  
dI /dt (A/mS)  
F
dI /dt (A/mS)  
F
Figure 11. Typical Reverse Recovery Charge  
Figure 10. Typical Reverse Recovery Charge  
250  
200  
150  
100  
50  
90  
80  
70  
60  
50  
40  
30  
I = 16 A  
F
I = 16 A  
F
8 A  
4 A  
8 A  
4 A  
20  
10  
0
T = 25°C  
R
T = 125°C  
R
J
V = 400 V  
J
V = 400 V  
0
100  
200  
300  
400  
500  
100  
200  
300  
dI /dt (A/mS)  
400  
500  
dl /dt (A/mS)  
F
F
Figure 13. Typical Switching Off Losses  
Figure 12. Typical Switching Off Losses  
1.0  
D = 0.5  
0.1  
0.05  
0.01  
0.1  
P
(pk)  
Z
(t) = r(t) R  
q
JC  
q
JC  
R
= 1.6°C/W MAX  
q
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
1
SINGLE PULSE  
READ TIME AT t  
1
t
2
T
− T = P  
C
Z
(t)  
q
(pk) JC  
J(pk)  
DUTY CYCLE, D = t /t  
1
2
0.01  
0.01  
0.1  
1.0  
10  
100  
1000  
t, TIME (ms)  
Figure 14. Thermal Response  
http://onsemi.com  
4
MSR860  
PACKAGE DIMENSIONS  
TO−220 TWO−LEAD  
CASE 221B−04  
ISSUE D  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
C
B
F
T
S
Q
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
15.11  
9.65  
4.06  
0.64  
3.61  
4.83  
2.79  
0.46  
12.70  
1.14  
2.54  
2.04  
1.14  
5.97  
0.000  
MAX  
15.75  
10.29  
4.82  
0.89  
3.73  
5.33  
3.30  
0.64  
14.27  
1.52  
3.04  
2.79  
1.39  
6.48  
1.27  
A
B
C
D
F
0.595  
0.380  
0.160  
0.025  
0.142  
0.190  
0.110  
0.018  
0.500  
0.045  
0.100  
0.080  
0.045  
0.235  
0.000  
0.620  
0.405  
0.190  
0.035  
0.147  
0.210  
0.130  
0.025  
0.562  
0.060  
0.120  
0.110  
0.055  
0.255  
0.050  
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
D
J
U
G
STYLE 1:  
PIN 1. CATHODE  
2. N/A  
3. ANODE  
4. CATHODE  
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MSR860/D  

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