MTP20N15EG [ONSEMI]

功率 MOSFET，150V，20A，130mΩ，单 N 沟道，TO-220;


型号：	MTP20N15EG
厂家：	ONSEMI
描述：	功率 MOSFET，150V，20A，130mΩ，单 N 沟道，TO-220 局域网开关脉冲晶体管
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MTP20N15E

Power MOSFET

20 Amps, 150 Volts

N−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain−to−source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power converters

and PWM motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against unexpected

voltage transients.

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20 AMPERES

150 VOLTS

_DS(on)= 130 mΩ

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

N−Channel

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• This is a Pb−Free Device*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Drain−Source Voltage

Symbol

Value

150

Unit

Vdc

& PIN ASSIGNMENT

DSS

Drain

Drain−Gate Voltage (R = 1.0 MΩ)

DGR

150

Gate−Source Voltage

− Continuous

Vdc

Adc

TO−220AB

CASE 221A

STYLE 5

− Non−Repetitive (t ≤ 10 ms)

GSM

MTP

20N15EG

AYWW

Drain − Continuous

− Continuous @ 100°C

− Single Pulse (t ≤ 10 μs)

Total Power Dissipation

Derate above 25°C

112

0.9

Watts

W/°C

Gate

Source

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

Drain

Single Drain−to−Source Avalanche Energy

MTP20N15E

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

− Starting T = 25°C

(V = 120 Vdc, V = 10 Vdc,

I = 20 Apk, L = 0.3 mH)

Thermal Resistance

− Junction to Case

− Junction to Ambient

°C/W

°C

1.1

62.5

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Device

MTP20N15EG

Package

Shipping

50 Units/Rail

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2010 − Rev. 1

MTP20N15E/D

MTP20N15E

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(BR)DSS

(V = 0 Vdc, I = 0.25 mAdc)

Temperature Coefficient (Positive)

150

−

TBD

−

Vdc

mV/°C

Zero Gate Voltage Collector Current

μAdc

DSS

(V = 150 Vdc, V = 0 Vdc)

−

100

(V = 150 Vdc, V = 0 Vdc, T = 125°C)

Gate−Body Leakage Current (V

20 Vdc, V = 0)

−

100

nAdc

GSS(f)

GSS(r)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

GS(th)

(V = V , I = 0.25 mAdc)

2.0

−

4.0

Vdc

Temperature Coefficient (Negative)

−

TBD

−

mV/°C

Static Drain−Source On−Resistance (V = 10 Vdc, I = 10 Adc)

−

0.12

0.13

Ohm

Vdc

DS(on)

Drain−Source On−Voltage (V = 10 Vdc)

DS(on)

(I = 20 Adc)

(I = 10 Adc, T = 125°C)

−

2.8

2.6

Forward Transconductance (V = 13 Vdc, I = 10 Adc)

8.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

−

1133

332

105

1627

474

iss

(V = 25 Vdc, V = 0 Vdc,

oss

f = 1.0 MHz)

174

rss

SWITCHING CHARACTERISTICS (Note 2.)

Turn−On Delay Time

−

153

55.9

−

d(on)

(V = 75 Vdc, I = 20 Adc,

Rise Time

= 10 Vdc,

= 9.1 Ω)

Turn−Off Delay Time

Fall Time

d(off)

Gate Charge

39.1

7.5

(V = 120 Vdc, I = 20 Adc,

= 10 Vdc)

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1.)

Vdc

(I = 20 Adc, V = 0 Vdc)

−

1.5

−

(I = 20 Adc, V = 0 Vdc, T = 125°C)

Reverse Recovery Time

−

160

123

36.5

1.1

−

(I = 20 Adc, V = 0 Vdc,

dI /dt = 100 A/μs)

Reverse Recovery Stored

Charge

μC

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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

MTP20N15EG [ONSEMI]

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