MUN2137 [ONSEMI]
Digital Transistors (BRT) R1 = 47 k, R2 = 22 k; 数字晶体管( BRT ) R1 = 47千欧, R2 = 22 K·型号: | MUN2137 |
厂家: | ONSEMI |
描述: | Digital Transistors (BRT) R1 = 47 k, R2 = 22 k |
文件: | 总11页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUN2137, MUN5137,
DTA144WE, DTA144WM3,
NSBA144WF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 22 kW
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PIN CONNECTIONS
PNP Transistors with Monolithic Bias
Resistor Network
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SC−70/SOT−323
CASE 419
XX MG
G
STYLE 3
1
MAXIMUM RATINGS (T = 25°C)
A
SC−75
CASE 463
STYLE 1
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
XX M
1
V
V
CBO
CEO
50
Vdc
SOT−723
CASE 631AA
STYLE 1
XX M
X M
I
C
100
40
mAdc
Vdc
1
V
IN(fwd)
SOT−1123
CASE 524AA
STYLE 1
Input Reverse Voltage
V
10
Vdc
IN(rev)
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
XXX
M
G
= Specific Device Code
=
=
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 1
DTA144W/D
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
Table 1. ORDERING INFORMATION
†
Device
MUN2137T1G
Part Marking
Package
SC−59
Shipping
6P
6P
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
8,000 / Tape & Reel
8,000 / Tape & Reel
MUN5137T1G
SC−70/SOT−323
SC−75
DTA144WET1G
DTA144WM3T5G
NSBA144WF3T5G
6P
6P
SOT−723
D(90°)*
SOT−1123
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*(XX°) = Degree rotation in the clockwise direction.
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
200
(2) SC−59; Minimum Pad
2
(1) (2)
(3) (4)
(3) SOT−1123; 100 mm , 1 oz. copper trace
(4) SOT−723; Minimum Pad
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2137)
Total Device Dissipation
A
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5137)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA144WE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA144WM3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−1123) (NSBA144WF3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 3)
(Note 4)
(Note 3)
(Note 4)
254
297
2.0
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
R
R
493
421
°C/W
q
JA
Thermal Resistance, Junction to Lead
(Note 3)
193
°C/W
°C
q
JL
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR*4 @ 100 mm , 1 oz. copper traces, still air.
4. FR*4 @ 500 mm , 1 oz. copper traces, still air.
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3
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.13
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 5)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 5)
h
FE
(I = 5.0 mA, V = 10 V)
80
−
140
−
−
0.25
−
C
CE
Collector *Emitter Saturation Voltage (Note 5)
(I = 10 mA, I = 0.3 mA)
VCE(sat)
Vdc
Vdc
Vdc
Vdc
Vdc
kW
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
i(off)
V
i(on)
−
1.7
2.7
−
CE
C
Input Voltage (on)
(V = 0.2 V, I = 3.0 mA)
−
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
V
OL
−
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
32.9
1.7
−
−
CC
B
L
Input Resistor
R1
R /R
47
2.1
61.1
2.6
Resistor Ratio
1
2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
TYPICAL CHARACTERISTICS
MUN2137, MUN5137, DTA144WE, DTA144WM3
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
10
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
10
100
10
1
75°C
9
8
7
6
5
4
3
2
1
0
f = 10 kHz
= 0 A
T = 25°C
A
I
E
T = −25°C
A
25°C
0.1
0.01
V
= 5 V
O
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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5
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
TYPICAL CHARACTERISTICS
NSBA144WF3
10
1
1000
I /I = 10
C
B
V
= 10 V
CE
150°C
25°C
100
−55°C
150°C
0.1
0.01
10
1
25°C
−55°C
10
0
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
7
6
5
4
3
2
1
0
100
10
f = 10 kHz
= 0 A
T = 25°C
A
−55°C
I
E
1
25°C
0.1
150°C
0.01
0.001
V
= 5 V
O
0
10
20
30
40
50
0
4
8
12
16
20
24
28
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
−55°C
25°C
10
150°C
1
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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6
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
1.60
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
b1
−Y−
3
E
HE
1
2
MILLIMETERS
2X b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
−X−
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
E
c
H
E
SIDE VIEW
L
0.185 REF
L2 0.05
0.15
STYLE 1:
b
3X
L2
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.08 X Y
e
3X
L
2X
b1
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X 0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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