MUR180ERL [ONSEMI]
SWITCHMODE Power Rectifiers; 开关模式电源整流器
| 型号： | MUR180ERL |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODE
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
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. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
ULTRAFAST
RECTIFIERS
1.0 AMPERES
800–1000 VOLTS
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 Volts
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
AXIAL LEAD
CASE 059–10
PLASTIC
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to
the part number
MARKING DIAGRAM
• Polarity: Cathode Indicated by Polarity Band
• Marking: MUR180E, MUR1100E
MUR1x0E
MUR1x0E = Device Code
MAXIMUM RATINGS
x
= 8 or 10
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
V
V
RRM
RWM
ORDERING INFORMATION
DC Blocking Voltage
MUR180E
MUR1100E
V
800
1000
R
Device
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
Average Rectified Forward Current
(Note 1.) (Square Wave Mounting
Method #3 Per Note 3.)
I
1.0 @
T = 95°C
A
A
MUR180E
1000 Units/Bag
5000/Tape & Reel
1000 Units/Bag
F(AV)
A
MUR180ERL
MUR1100E
MUR1100ERL
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
35
FSM
5000/Tape & Reel
Operating Junction Temperature and
Storage Temperature Range
T , T
–65 to
+175
°C
J
stg
Preferred devices are recommended choices for future use
and best overall value.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
August, 2002 – Rev. 1
MUR180E/D
MUR180E, MUR1100E
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
R
See Note 3.
°C/W
q
JA
Maximum Instantaneous Forward Voltage (Note 2.)
v
Volts
mA
F
(i = 1.0 Amp, T = 150°C)
1.50
1.75
F
J
(i = 1.0 Amp, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2.)
(Rated dc Voltage, T = 100°C)
i
R
600
10
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
rr
ns
(I = 1.0 Amp, di/dt = 50 Amp/ms)
100
75
F
(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)
REC
F
R
Maximum Forward Recovery Time
t
fr
75
ns
(I = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)
F
Controlled Avalanche Energy (See Test Circuit in Figure 6)
W
AVAL
10
mJ
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
1000
100
10
20
T = 175°C
J
10
7.0
5.0
100°C
25°C
1.0
3.0
2.0
T = 175°C
J
25°C
0.1
100°C
0.01
1.0
0.7
0.5
0
100 200 300 400 500 600 700 800 900 1000
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V is sufficiently below rated V .
0.3
0.2
R
R
5.0
4.0
3.0
2.0
0.1
0.07
0.05
RATED V
R
R
= 50°C/W
q
JA
0.03
0.02
dc
SQUARE WAVE
1.0
0
0.01
0.3 0.5
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
2.3
0
50
100
150
200
250
v INSTANTANEOUS VOLTAGE (VOLTS)
F,
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Typical Forward Voltage
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
20
10
5.0
10
5.0
I
PK
T = 25°C
J
(CAPACITIVEĂLOAD)
+ 20
I
AV
4.0
3.0
2.0
dc
7.0
5.0
T = 175°C
J
SQUARE WAVE
1.0
0
3.0
2.0
0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
I
, AVERAGE FORWARD CURRENT (AMPS)
V , REVERSE VOLTAGE (VOLTS)
R
F(AV)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
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3
MUR180E, MUR1100E
+V
DD
I
L
40 mH COIL
BV
DUT
V
D
I
D
MERCURY
SWITCH
I
D
I
L
DUT
S
1
V
DD
t
0
t
1
t
2
t
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
voltage is low compared to the
DD
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
When S is closed at t the current in the inductor I ramps
1
0
L
up linearly; and energy is stored in the coil. At t the switch
stored in the coil during the time when S was closed,
1
1
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and
goes to zero at t .
2
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V power supply while the diode is in
DD
breakdown (from t to t ) minus any losses due to finite
1
2
CHANNEL 2:
I
EQUATION (1):
CH1 500V
CH2 50mV
A
20ms
953 V VERT
L
0.5 AMPS/DIV.
BV
DUT
2
1
W
[
LILPK ǒ Ǔ
AVAL
2
BV
–V
DUT DD
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
EQUATION (2):
2
LPK
1
2
W
[
LI
AVAL
TIME BASE:
20 ms/DIV.
1
ACQUISITIONS
SAVEREF SOURCE
217:33 HRS
STACK
CH1
CH2
REF
REF
Figure 8. Current–Voltage Waveforms
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4
MUR180E, MUR1100E
NOTE 3. — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient (R ) for the mountings shown is to be
qJA
used as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R
IN STILL AIR
q
JA
Lead Length, L
Mounting
Method
1/8
52
67
1/4
65
80
50
1/2
72
87
Units
°C/W
°C/W
°C/W
1
2
3
R
q
JA
MOUNTING METHOD 1
L
L
MOUNTING METHOD 2
L
L
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8″
Board Ground Plane
P.C. Board with
1–1/2″ X 1–1/2″ Copper Surface
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5
MUR180E, MUR1100E
PACKAGE DIMENSIONS
MINI MOSORB
CASE 59–10
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
F
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.10
2.00
0.71
---
MAX
5.20
2.70
0.86
1.27
---
A
B
D
F
0.161
0.079
0.028
---
0.205
0.106
0.034
0.050
---
A
F
K
1.000
25.40
K
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6
MUR180E, MUR1100E
Notes
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7
MUR180E, MUR1100E
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
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MUR180E/D
相关型号：
MUR190E
Rectifier, Ultra Fast Recovery; Max Peak Repetitive Reverse Voltage: 1; Max TMS Bridge Input Voltage: 900; Max DC Reverse Voltage: 10; Package: DO-41
DIGITRON
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