MUR480EG [ONSEMI]

SWITCHMODE TM Power Rectifiers; 开关模式TM电源整流器
MUR480EG
型号: MUR480EG
厂家: ONSEMI    ONSEMI
描述:

SWITCHMODE TM Power Rectifiers
开关模式TM电源整流器

整流二极管 开关 PC 局域网 超快速恢复能力电源 超快恢复二极管 快速恢复二极管
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中文:  中文翻译
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MUR480E, MUR4100E  
SWITCHMODEt  
Power Rectifiers  
Ultrafast “E’’ Series with High Reverse  
Energy Capability  
http://onsemi.com  
These state−of−the−art devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
ULTRAFAST RECTIFIER  
4.0 AMPERES, 800−1000 VOLTS  
Features  
20 mJ Avalanche Energy Guaranteed  
Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
Ultrafast 75 Nanosecond Recovery Time  
175°C Operating Junction Temperature  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
Reverse Voltage to 1000 V  
These are Pb−Free Devices*  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.1 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AXIAL LEAD  
CASE 267  
STYLE 1  
Lead Temperature for Soldering Purposes:  
MARKING DIAGRAM  
260°C Max. for 10 Seconds  
Shipped in Plastic Bags, 5,000 per Bag  
Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to  
the Part Number  
Polarity: Cathode indicated by Polarity Band  
A
MUR  
4xxx  
YYWWG  
G
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
MUR480E  
MUR4100E  
800  
1000  
A
= Assembly Location  
R
MUR4xxx= Device Number (see page 2)  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
Average Rectified Forward Current  
(Square Wave; Mounting Method #3 Per Note 2)  
I
4.0 @  
T = 35°C  
A
A
A
F(AV)  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
70  
FSM  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
−65 to  
+175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
February, 2007 − Rev. 7  
MUR480E/D  
MUR480E, MUR4100E  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Maximum Thermal Resistance, Junction−to−Ambient  
ELECTRICAL CHARACTERISTICS  
Characteristic  
R
See Note 2  
°C/W  
q
JA  
Symbol  
Max  
Unit  
Maximum Instantaneous Forward Voltage (Note 1)  
v
V
F
(i = 3.0 Amps, T = 150°C)  
1.53  
1.75  
1.85  
F
J
(i = 3.0 Amps, T = 25°C)  
F
J
(i = 4.0 Amps, T = 25°C)  
F
J
Maximum Instantaneous Reverse Current (Note 1)  
i
R
mA  
(Rated dc Voltage, T = 150°C)  
900  
25  
J
(Rated dc Voltage, T = 25°C)  
J
Maximum Reverse Recovery Time  
t
rr  
ns  
(I = 1.0 Amp, di/dt = 50 Amp/ms)  
100  
75  
F
(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)  
F
R
REC  
Maximum Forward Recovery Time  
(I = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)  
t
fr  
75  
ns  
F
Controlled Avalanche Energy (See Test Circuit in Figure 6)  
W
AVAL  
20  
mJ  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.  
ORDERING INFORMATION  
Device  
Marking  
Package  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Axial Lead*  
Shipping  
MUR480E  
500 Units / Bulk  
500 Units / Bulk  
1500 / Tape & Reel  
1500 / Tape & Reel  
500 Units / Bulk  
500 Units / Bulk  
500 Units / Bulk  
500 Units / Bulk  
1500 / Tape & Reel  
1500 / Tape & Reel  
MUR480EG  
MUR480ERL  
MUR480E  
MUR480ERLG  
MUR480ES  
MUR480ES  
MUR4100E  
MUR480ESG  
MUR4100E  
MUR4100EG  
MUR4100ERL  
MUR4100ERLG  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
http://onsemi.com  
2
 
MUR480E, MUR4100E  
MUR480E, MUR4100E  
20  
1000  
400  
T = 175°C  
J
200  
100  
25°C  
T = 175°C  
J
40  
20  
10  
10  
7.0  
5.0  
100°C  
25°C  
100°C  
4.0  
2.0  
1.0  
0.4  
0.2  
0.1  
3.0  
2.0  
0.04  
0.02  
0.01  
0.004  
0.002  
0.001  
*The curves shown are typical for the highest voltage  
device in the voltage grouping. Typical reverse current  
for lower voltage selections can be estimated from these  
same curves if V is sufficiently below rated V .  
R
R
0
100 200 300 400 500 600 700 800 900 1000  
1.0  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Typical Reverse Current*  
0.7  
0.5  
10  
8.0  
6.0  
4.0  
0.3  
0.2  
Rated V  
R
R
q
= 28°C/W  
JA  
0.1  
0.07  
0.05  
dc  
SQUARE WAVE  
2.0  
0
0.03  
0.02  
0
50  
100  
150  
200  
250  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
1.6 1.8  
2
T , AMBIENT TEMPERATURE (°C)  
A
v
INSTANTANEOUS VOLTAGE (VOLTS)  
F,  
Figure 3. Current Derating  
Figure 1. Typical Forward Voltage  
(Mounting Method #3 Per Note 2)  
10  
9.0  
8.0  
7.0  
6.0  
5.0  
70  
60  
50  
T = 175°C  
J
5.0  
40  
30  
T = 25°C  
J
10  
I
(Capacitive  
Load)  
PK  
=20  
dc  
I
20  
AV  
4.0  
3.0  
2.0  
SQUAREWAVE  
10  
9.0  
8.0  
1.0  
0
7.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
10  
20  
30  
40  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I
, AVERAGE FORWARD CURRENT (AMPS)  
F(AV)  
Figure 4. Power Dissipation  
Figure 5. Typical Capacitance  
http://onsemi.com  
3
MUR480E, MUR4100E  
+V  
DD  
I
L
40 mH COIL  
BV  
DUT  
V
D
I
D
MERCURY  
SWITCH  
I
D
I
L
DUT  
S
1
V
DD  
t
0
t
1
t
2
t
Figure 6. Test Circuit  
Figure 7. Current−Voltage Waveforms  
The unclamped inductive switching circuit shown in  
Figure 6 was used to demonstrate the controlled avalanche  
capability of the new “E’’ series Ultrafast rectifiers. A  
mercury switch was used instead of an electronic switch to  
simulate a noisy environment when the switch was being  
opened.  
component resistances. Assuming the component resistive  
elements are small Equation (1) approximates the total  
energy transferred to the diode. It can be seen from this  
equation that if the V  
voltage is low compared to the  
DD  
breakdown voltage of the device, the amount of energy  
contributed by the supply during breakdown is small and the  
total energy can be assumed to be nearly equal to the energy  
When S is closed at t the current in the inductor I ramps  
1
0
L
up linearly; and energy is stored in the coil. At t the switch  
stored in the coil during the time when S was closed,  
1
1
is opened and the voltage across the diode under test begins  
to rise rapidly, due to di/dt effects, when this induced voltage  
reaches the breakdown voltage of the diode, it is clamped at  
Equation (2).  
The oscilloscope picture in Figure 8, shows the  
information obtained for the MUR8100E (similar die  
construction as the MUR4100E Series) in this test circuit  
conducting a peak current of one ampere at a breakdown  
voltage of 1300 V, and using Equation (2) the energy  
absorbed by the MUR8100E is approximately 20 mjoules.  
Although it is not recommended to design for this  
condition, the new “E’’ series provides added protection  
against those unforeseen transient viruses that can produce  
unexplained random failures in unfriendly environments.  
BV  
and the diode begins to conduct the full load current  
DUT  
which now starts to decay linearly through the diode, and  
goes to zero at t .  
2
By solving the loop equation at the point in time when S  
1
is opened; and calculating the energy that is transferred to  
the diode it can be shown that the total energy transferred is  
equal to the energy stored in the inductor plus a finite amount  
of energy from the V power supply while the diode is in  
DD  
breakdown (from t to t ) minus any losses due to finite  
1
2
CHANNEL 2:  
I
EQUATION (1):  
CH1 500V  
CH2 50mV  
A
20ms  
953 V VERT  
L
0.5 AMPS/DIV.  
BV  
DUT  
2
1
W
[
LILPK ǒ Ǔ  
AVAL  
2
BV  
–V  
DUT DD  
CHANNEL 1:  
V
DUT  
500 VOLTS/DIV.  
EQUATION (2):  
2
LPK  
1
2
W
[
LI  
AVAL  
TIME BASE:  
20 ms/DIV.  
1
ACQUISITIONS  
SAVEREF SOURCE  
217:33 HRS  
STACK  
CH1  
CH2  
REF  
REF  
Figure 8. Current−Voltage Waveforms  
http://onsemi.com  
4
 
MUR480E, MUR4100E  
NOTE 2 − AMBIENT MOUNTING DATA  
Data shown for thermal resistance junction−to−ambient  
(R ) for the mountings shown is to be used as typical  
qJA  
guideline values for preliminary engineering or in case the  
tie point temperature cannot be measured.  
TYPICAL VALUES FOR R  
IN STILL AIR  
q
JA  
Lead Length, L (IN)  
Mounting  
Method  
1/8  
50  
58  
1/4  
51  
59  
1/2  
53  
61  
3/4  
55  
63  
Units  
°C/W  
°C/W  
°C/W  
1
2
3
R
q
JA  
28  
MOUNTING METHOD 1  
P.C. Board Where Available Copper  
Surface area is small.  
L
L
MOUNTING METHOD 2  
Vector Push−In Terminals T−28  
L
L
MOUNTING METHOD 3  
P.C. Board with  
1−1/2 x 1−1/2 Copper Surface  
L = 1/2″  
Board Ground Plane  
http://onsemi.com  
5
MUR480E, MUR4100E  
PACKAGE DIMENSIONS  
AXIAL LEAD  
CASE 267−05  
(DO−201AD)  
ISSUE G  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
K
D
2. CONTROLLING DIMENSION: INCH.  
1
2
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
7.30  
4.80  
1.20  
25.40  
MAX  
9.50  
5.30  
1.30  
−−−  
A
B
D
K
0.287  
0.189  
0.047  
1.000  
0.374  
0.209  
0.051  
−−−  
B
K
STYLE 1:  
PIN 1. CATHODE (POLARITY BAND)  
2. ANODE  
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MUR480E/D  

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