MV2101G [ONSEMI]
Silicon Tuning Diodes; 硅调谐二极管
| 型号： | MV2101G |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Tuning Diodes |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
http://onsemi.com
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
Features
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance − 10%
• Complete Typical Design Curves
• Pb−Free Packages are Available
3
1
Cathode
Anode
SOT−23
TO−92
2
1
Cathode
Anode
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
30
Unit
Vdc
MARKING
DIAGRAMS
3
V
R
Forward Current
I
200
mAdc
F
1
Forward Power Dissipation
P
D
2
xxx M G
@ T = 25°C
MMBV21xx
225
1.8
mW
mW/°C
SOT−23 (TO−236)
CASE 318−08
STYLE 8
A
G
Derate above 25°C
1
@ T = 25°C
MV21xx
LV2209
280
2.8
mW
mW/°C
A
Derate above 25°C
xxx = Specific Device Code
M
G
= Date Code*
= Pb−Free Package
Junction Temperature
T
+150
°C
°C
J
Storage Temperature Range
T
stg
−55 to +150
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
yy
yyyy
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
AYWW G
Characteristic
Symbol Min Typ Max
Unit
TO−92 (TO−226AC)
G
CASE 182
STYLE 1
1
Reverse Breakdown Voltage
V
Vdc
(BR)R
2
(I = 10 mAdc)
R
MMBV21xx, MV21xx
LV2209
30
25
−
−
−
−
yyyyyy = Specific Device Code
A
Y
= Assembly Location
= Year
= Work Week
Reverse Voltage Leakage Current
I
−
−
0.1
mAdc
R
(V = 25 Vdc, T = 25°C)
R
A
WW
G
Diode Capacitance Temperature Co-
efficient (V = 4.0 Vdc, f = 1.0 MHz)
TC
−
280
−
ppm/°C
= Pb−Free Package
C
R
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
C , Diode Capacitance
Q, Figure of Merit TR, Tuning Ratio
= 4.0 Vdc, C /C
T
V
= 4.0 Vdc, f = 1.0 MHz
pF
V
R
R
2
30
f = 50 MHz
f = 1.0 MHz
†
Device
Marking Package
Shipping
Min
6.1
6.1
Nom
6.8
Max
7.5
Typ
450
450
Min Typ Max
MMBV2101LT1
MMBV2101LT1G
M4G
M4G
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
2.5
2.5
2.7
2.7
3.2
3.2
SOT−23
6.8
7.5
(Pb−Free)
MMBV2101L
MV2101
M4G
SOT−23
TO−92
Bulk (Note 1)
1,000 per Box
1,000 per Box
6.1
6.1
6.1
6.8
6.8
6.8
7.5
7.5
7.5
450
450
450
2.5
2.5
2.5
2.7
2.7
2.7
3.2
3.2
3.2
MV2101
MV2101
MV2101G
TO−92
(Pb−Free)
MMBV2103LT1
MMBV2105LT1
MMBV2105LT1G
4H
4U
4U
SOT−23
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
9.0
10
15
15
11
400
400
400
2.5
2.5
2.5
2.9
2.9
2.9
3.2
3.2
3.2
13.5
13.5
16.5
16.5
SOT−23
(Pb−Free)
MMBV2105L
MV2105
4U
SOT−23
TO−92
Bulk (Note 1)
1,000 per Box
1,000 per Box
13.5
13.5
13.5
15
15
15
16.5
16.5
16.5
400
400
400
2.5
2.5
2.5
2.9
2.9
2.9
3.2
3.2
3.2
MV2105
MV2105
MV2105G
TO−92
(Pb−Free)
MMBV2107LT1
4W
4W
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
19.8
19.8
22
22
24.2
24.2
350
350
2.5
2.5
2.9
2.9
3.2
3.2
MMBV2107LT1G
SOT−23
(Pb−Free)
MMBV2107L
4W
4X
4X
SOT−23
SOT−23
Bulk (Note 1)
19.8
24.3
24.3
22
27
27
24.2
29.7
29.7
350
300
300
2.5
2.5
2.5
2.9
3.0
3.0
3.2
3.2
3.2
MMBV2108LT1
MMBV2108LT1G
3,000 / Tape & Reel
3,000 / Tape & Reel
SOT−23
(Pb−Free)
LV2209
LV2209
4J
TO−92
1,000 per Box
29.7
29.7
29.7
33
33
33
36.3
36.3
36.3
200
200
200
2.5
2.5
2.5
3.0
3.0
3.0
3.2
3.2
3.2
MMBV2109LT1
MMBV2109LT1G
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
4J
SOT−23
(Pb−Free)
MMBV2109L
MV2109
4J
SOT−23
TO−92
Bulk (Note 1)
1,000 per Box
1,000 per Box
29.7
29.7
29.7
33
33
33
36.3
36.3
36.3
200
200
200
2.5
2.5
2.5
3.0
3.0
3.0
3.2
3.2
3.2
MV2109
MV2109
MV2109G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16″.
(C = C + C ). C is measured at 1.0 MHz using a capacitance
T
C
J
T
bridge (Boonton Electronics Model 75A or equivalent).
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
2. TR, TUNING RATIO
TC is guaranteed by comparing C at V = 4.0 Vdc, f = 1.0
C
T
R
TR is the ratio of C measured at 2.0 Vdc divided by C
measured at 30 Vdc.
T
T
MHz, T = −65°C with C at V = 4.0 Vdc, f = 1.0 MHz, T
A
T
R
A
= +85°C in the following equation, which defines TC :
C
3. Q, FIGURE OF MERIT
C () 85°C) – C (–65°C)
6
T
T
10
Ť·
C (25°C)
T
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
+ Ť
TC
C
85 ) 65
Accuracy limited by measurement of C to 0.1 pF.
T
2pfC
Q +
G
http://onsemi.com
2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
T = 25°C
A
f = 1.0 MHz
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.5
20
30
0.1
0.2
0.3
1.0
2.0
3.0
5.0
10
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Diode Capacitance versus Reverse Voltage
100
1.040
1.030
1.020
50
V = 2.0 Vdc
R
T = 125°C
A
20
10
5.0
V = 4.0 Vdc
R
1.010
1.000
0.990
0.980
0.970
0.960
T = 75°C
A
2.0
1.0
V = 30 Vdc
R
0.50
0.20
0.10
T = 25°C
A
NORMALIZED TO C
at T = 25°C
T
A
V = (CURVE)
0.05
R
0.02
0.01
0
5.0
10
15
20
25
30
−75
−50
−25
0
+25
+50
+75
+100 +125
V , REVERSE VOLTAGE (VOLTS)
R
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
5000
MMBV2101LT1/MV2101
MMBV2109LT1
3000
2000
3000
2000
1000
500
1000
MMBV2101LT1/MV2101
500
300
200
300
200
100
100
50
50
MMBV2109LT1/MV2109
30
20
30
20
T = 25°C
A
f = 50 MHz
T = 25°C
R
A
V = 4.0 Vdc
10
1.0
10
10
10
V , REVERSE VOLTAGE (VOLTS)
20
30
20
30
50
70
100
200 250
2.0
3.0
5.0
7.0
f, FREQUENCY (MHz)
R
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
http://onsemi.com
3
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
SEATING
PLANE
D
INCHES
DIM MIN MAX
MILLIMETERS
L
P
MIN
4.45
MAX
5.21
5.33
4.19
0.533
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.205
0.210
0.165
0.021
J
K
4.32
3.18
0.407
0.050 BSC
0.100 BSC
0.014 0.016
−−− 12.70
1.27 BSC
2.54 BSC
0.36
SECTION X−X
X X
0.41
−−−
−−−
2.66
1.27
−−−
−−−
D
K
L
0.500
0.250
0.080
−−−
0.105
6.35
2.03
−−−
G
N
P
R
V
H
−−− 0.050
0.115
0.135
−−−
−−−
2.93
3.43
V
C
STYLE 1:
PIN 1. ANODE
2. CATHODE
1
2
N
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBV2101LT1/D
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