NC7WV07L6X [ONSEMI]
TinyLogic ULP-A 双通道缓冲器（漏极开路输出）;
| 型号： | NC7WV07L6X |
| 厂家： | 
ONSEMI |
| 描述： | TinyLogic ULP-A 双通道缓冲器（漏极开路输出） 栅 逻辑集成电路 触发器 |
| 文件： | 总9页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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TinyLogic ULP-A
Dual Buffer
(Open-Drain Output)
MARKING
DIAGRAMS
CCKK
XYZ
SIP6 1.45X1.0
MicroPak
CASE 127EB
NC7WV07
The NC7WV07 is a dual buffer with open−drain output in tiny
Pin 1
=
footprint packages. The device is designed to operate for V
to 3.6 V.
0.9 V
CC
CC
KK
XY
Z
= Specific Device Code
= 2−Digit Lot Run Traceability Code
= 2−Digit Date Code
Features
= Assembly Plant Code
• Designed for 0.9 V to 3.6 V V Operation
CC
• 1.6 ns t at 3.3 V (Typ)
PD
6
• Inputs/Outputs Over−Voltage Tolerant up to 3.6 V
G
XXXM
SC−88
CASE 419B−02
• I
Supports Partial Power Down Protection
• Source/Sink 24 mA at 3.3 V
OFF
G
1
1
• Available in SC−88 and MicroPak™ Packages
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
XXX = Specific Devic Code
Compliant
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
A
1
2
3
6
5
4
Y
V
Y
A1
GND
A2
1
2
3
6
5
4
Y1
V
1
1
*Date Code orientation and/or position may
vary depending upon manufacturing location.
GND
CC
2
CC
A
2
ORDERING INFORMATION
Y2
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
MicroPak
SC−88
Figure 1. Pinout Diagrams (Top Views)
1
A
A
Y
Y
1
1
1
2
2
Figure 2. Logic Symbol
PIN ASSIGNMENT
FUNCTION TABLE
Pin
1
Function
A1
A Input
Y Output
L
L
Z
2
GND
A2
H
3
Z = High Impedance
4
Y2
5
V
CC
6
Y1
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
September, 2021 − Rev. 2
NC7WV07/D
NC7WV07
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +4.3
−0.5 to +4.3
V
IN
V
V
OUT
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V + 0.5
V
CC
−0.5 to +4.3
−0.5 to +4.3
Power−Down Mode (V = 0 V)
CC
I
DC Input Diode Current
V
< GND
< GND
−50
−50
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
OUT
OK
I
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
50
OUT
I
or I
GND
STG
50
CC
T
−65 to +150
260
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 2)
°C
L
T
+150
°C
J
q
SC−88
MicroPak
377
154
°C/W
JA
P
D
Power Dissipation in Still Air
SC−88
MicroPak
332
812
mW
MSL
Moisture Sensitivity
Level 1
−
−
V
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 3)
Human Body Model
Charged Device Model
4000
2000
I
Latchup Performance (Note 4)
100
mA
Latchup
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow per JESD51−7.
3. HBM tested to EIA / JESD22−A114−A. CDM tested to JESD22−C101−A. JEDEC recommends that ESD qualification to EIA/JESD22−A115A
(Machine Model) be discontinued.
4. Tested to EIA/JESD78 Class II.
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2
NC7WV07
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
0.9
0
Max
3.6
Unit
V
V
CC
Positive DC Supply Voltage
DC Input Voltage
V
IN
3.6
V
V
OUT
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 5)
0
0
0
V
CC
3.6
3.6
Power−Down Mode (V = 0 V)
CC
T
Operating Temperature Range
−40
+85
10
°C
A
t , t
r
Input Transition Rise and Fall Time
V = 3.3 V 0.3 V
CC
0
ns/V
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Applicable to devices with outputs that may be tri−stated.
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
T
= −405C to +855C
A
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
(V)
Unit
0.9
−
0.5
−
−
−
−
V
High−Level Input
V
IH
Voltage
1.1 to 1.3
1.4 to 1.6
0.65 x V
0.65 x V
−
0.65 x V
−
CC
CC
CC
CC
−
−
0.65 x V
−
CC
CC
1.65 to 1.95 0.65 x V
−
−
−
0.65 x V
−
−
2.3 to <2.7
2.7 to 3.6
0.9
1.6
2.0
−
−
1.6
2.0
−
−
−
−
0.5
−
−
−
V
Low−Level Input
Voltage
V
IL
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to <2.7
2.7 to 3.6
−
0.35 x V
0.35 x V
0.35 x V
0.7
−
0.35 x V
0.35 x V
0.35 x V
0.7
CC
CC
CC
CC
CC
CC
−
−
−
−
−
−
−
−
−
−
−
0.8
−
0.8
V
= V or V
V
Low−Level
V
IN
IH
IL
OL
Output Voltage
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
I
OL
= 100 mA
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to < 2.7
2.7 to 3.6
1.1 o 1.3
0.1
0.1
0.2
0.2
0.2
0.2
0.2
0.2
I
OL
I
OL
I
OL
I
OL
= 2 mA
= 4 mA
= 6 mA
= 12 mA
0.25 x V
0.25 x V
0.3
0.25 x V
0.25 x V
0.3
CC
CC
1.4 to 1.6
1.65 to 1.95
2.3 to <2.7
2.7 to 3.6
2.3 to <2.7
2.7 to 3.6
2.7 to 3.6
0.9 to 3.6
CC
CC
0.4
0.4
0.4
0.4
0.6
0.6
I
I
= 18 mA
= 24 mA
OL
0.4
0.4
0.55
0.1
0.55
0.5
OL
I
IN
Input Leakage
Current
V
IN
= 0 V to 3.6 V
mA
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3
NC7WV07
DC ELECTRICAL CHARACTERISTICS (continued)
T
A
= 255C
Typ
−
T
= −405C to +855C
A
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
(V)
Unit
I
Power Off Leakage
Current
V
V
= 0 V to 3.6 V or
OUT
0
−
0.5
−
0.5
mA
OFF
IN
= 0 V to 3.6 V
I
Quiescent Supply
Current
V
IN
= V or GND
0.9 to 3.6
−
−
0.9
−
0.9
mA
CC
CC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Typ
T
= −405C to +855C
A
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
(V)
Unit
t
t
,
Propagation Delay,
A to Y (Figures 3 and 4)
0.9
−
11.8
−
−
−
ns
R1 = R = 1 MW,
L
PZL
L
C = 15 pF
PLZ
R1 = R = 2 kW,
L
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
−
−
−
−
−
5.1
3.6
2.4
1.9
1.6
15.0
8.7
6.0
3.6
3.3
−
−
−
−
−
18.6
9.7
6.8
4.7
4.0
L
C = 15 pF
R1 = R = 500 W,
L
C = 30 pF
L
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Input Capacitance
Test Condition
Typical (T = 25°C)
Unit
pF
A
C
V
V
= 0 V
= 0 V
2.0
6.5
IN
CC
C
Output Capacitance
pF
OUT
CC
C
Power Dissipation Capacitance (Note 6)
f = 10 MHz, V = 0.9 to 3.6 V, V = 0 V or V
CC
10.0
pF
PD
CC
IN
6. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption: P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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4
NC7WV07
OPEN
Test
/ t
Switch Position
2 x V
DUT
GND
CC
t
t
Open
PLH PHL
/ t
6 V @ Vcc = 3.0−3.6 V; 2 x Vcc @ Vcc =
0.9−2.7 V
PLZ PZL
R
1
L
INPUT
t
/ t
GND
OUTPUT
PHZ PZH
R
R
T
C *
L
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 3. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
V
OUTPUT
OUTPUT
mo
V
V
V
V
OUTPUT
OUTPUT
mo
mo
V
+ V
OL
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
OH
V
− V
OH
Y
mo
mo
mo
V
OL
~0 V
V
, V
V
, V
V
, V
/ 2
/ 2
/ 2
/ 2
/ 2
V , V
CC
mi
mo
CC
CC
CC
CC
CC
Y
0.9
V
CC
V
CC
V
CC
V
CC
V
CC
/ 2
/ 2
/ 2
/ 2
/ 2
V
V
V
V
V
0.1
0.1
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.1
0.15
0.15
0.3
1.5
1.5
Figure 4. Switching Waveforms
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5
NC7WV07
ORDERING INFORMATION
Pin 1 Orientation
(See below)
†
Device
NC7WV07P6X
NC7WV07L6X
Package
SC−88
Marking
V07
Shipping
Q4
Q4
3000 / Tape & Reel
5000 / Tape & Reel
MicroPak
BC
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Pin 1 Orientation in Tape and Reel
MicroPak is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
NC7WV07
PACKAGE DIMENSIONS
SIP6 1.45X1.0
CASE 127EB
ISSUE O
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7
NC7WV07
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
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8
NC7WV07
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout
or pin assignment.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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