NCD98011XMXTAG [ONSEMI]

12-Bit Low Power SAR ADC;
NCD98011XMXTAG
型号: NCD98011XMXTAG
厂家: ONSEMI    ONSEMI
描述:

12-Bit Low Power SAR ADC

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12-Bit Low Power SAR ADC  
NCD98010, NCD98011  
The NCD98010 (unsigned output) and the NCD98011 (signed  
output) ADC products provide an extremely low power solution for  
analog to digital conversion applications using a capacitorbased  
successiveapproximation architecture. Optimized for low power and  
speed, the NCD98010/1 can achieve a sample rate of 2 MSPS while  
consuming less than 1 mW of power. The device also features a large  
input voltage range of 1.65 V to 3.3 V for various applications for both  
analog and digital supplies. The SPIcompatible interface provides a  
straightforward dataacquisition method.  
www.onsemi.com  
MARKING  
DIAGRAMS  
Features  
X2QFN8  
DP SUFFIX  
CASE 722AM  
XXM  
Nanowatt Power Consumption  
Fully Differential Input  
2MSPS Throughput  
Small Package Size  
PreCalibrated  
US8 (SSOP8)  
MX SUFFIX  
CASE 493  
XXM  
SPI Interface  
XX  
M
= Specific Device Code  
= Date Code  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
PIN CONFIGURATION  
LowPower Data Acquisition  
Batterypowered Equipment  
Level Sensors  
Ultrasonic Flow Meters  
Motor Controls  
Wearable Fitness  
V
INN  
8
CSN  
V
V
1
2
3
7
6
5
INP  
OUT  
CLK  
CC  
GND  
4
V
DD  
Portable Medical Equipment  
Glucose Meters  
VCC  
X2QFN8 (Top View)  
V
GND  
1
2
8
7
DD  
VDD  
CLK  
V
CC  
V
OUT  
CSN  
3
4
6
5
INP  
+
V
INN  
VINP  
CSN  
CLK  
Switched  
Comparator  
Capacitive  
DAC  
US8 (Top View)  
VINN  
-
Serial  
Interface  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Successive Approximation Register  
Digital Control  
OUT  
NCD98010XMXTAG  
NCD98011XMXTAG  
X2QFN  
5000 / Tape &  
Reel  
NCD98010XDPT3G*  
NCD98011XDPT3G*  
SSOP8  
GND  
Figure 1. Block Diagram  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
* These products are currently under development.  
Please contact Sales regarding their availability.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
March, 2020 Rev. 1  
NCD9801/D  
NCD98010, NCD98011  
PIN DESCRIPTION  
X2QFN  
Pin No.  
SSOP  
Pin No.  
Name  
CSN  
OUT  
CLK  
Function  
1
2
3
4
5
6
7
8
4
3
2
1
8
7
6
5
Chip select (active low)  
Data Output (serialized)  
Clock  
VDD  
GND  
VCC  
Digital I/O supply voltage  
Common ground for all pins  
Analog supply and ADC reference voltage  
Analog input, positive signal  
V
INP  
INN  
V
Analog input, negative signal  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
0.3 to 3.63  
0.3 to 3.63  
0.3 to 3.63  
0.3 to 3.63  
0.3 to 3.63  
0.3 to 3.63  
40 to 150  
260  
Unit  
V
Supply Voltage Range  
Supply Voltage Range  
Input Voltage Range  
V
CC  
V
DD  
V
V
V
INP  
INN  
OUT  
Input Voltage Range  
V
V
Output Voltage Range  
CSN Input Voltage Range  
Storage Temperature Range  
V
V
V
EN  
V
T
STG  
°C  
°C  
kV  
V
Lead Temperature, Soldering (10 sec.)  
T
SLD  
ESD Capability, Human Body Model (Note 1)  
ESD Capability, Charged Device Model (Note 1)  
Latchup Current Immunity (Note 1)  
ESD  
ESD  
2.0  
HBM  
CDM  
500  
LU  
100  
mA  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Tested by the following methods @ T = 25°C:  
A
ESD Human Body Model tested per JESD22A114  
ESD Charged Device Model per ESD STM5.3.1  
Latchup Current tested per JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Rating  
Symbol  
Min  
1.65  
1.65  
Max  
3.6  
3.6  
0
Unit  
V
Analog Supply Voltage  
Digital I/O Supply Voltage  
Ground  
V
CC  
V
DD  
V
GND  
V
Ambient Temperature  
Junction Temperature  
T
40  
40  
120  
125  
°C  
°C  
A
T
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
 
NCD98010, NCD98011  
ELECTRICAL CHARACTERISTICS (T = 25°C, V = 3 V, unless otherwise noted)  
J
CC  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
POWER SUPPLY REQUIREMENTS  
Analog Supply and ADC reference  
Digital I/O Supply  
V
V
1.65  
1.65  
3
3.6  
3.6  
150  
V
CC  
3
V
DD  
2 MSPS for V = 3.6 V  
100  
50  
mA  
mA  
mA  
mA  
mW  
mW  
mW  
mW  
mA  
mA  
mA  
mA  
CC  
1 MSPS for V = 3 V  
CC  
Analog Supply Current  
I
VCC  
100 kSPS for V = 3.6 V  
7.6  
30  
20  
540  
72  
CC  
1 MSPS for V = 1.8 V  
CC  
2 MSPS for V = 3.6 V  
300  
150  
15  
CC  
1 MSPS for V = 3 V  
CC  
Analog Power Dissipation  
P
I
VCC  
100 kSPS for V = 3.6 V  
CC  
1 MSPS for V = 1.8 V  
54  
CC  
2 MSPS for V = 3.6 V  
852  
425  
45  
DD  
Digital Supply Current  
Dependent on SDO loading  
(tested with ~7 pF)  
1 MSPS for V = 3 V  
DD  
VDD  
100 kSPS for V = 3.6 V  
DD  
1 MSPS for V = 1.8 V  
136  
DD  
Standby current (CSN high)  
(Note 2)  
V
CC  
= 3.6 V  
I
3.9  
6
mA  
STNDBY  
ANALOG INPUT  
FullScale Voltage Span  
Common Mode Voltage=V /2  
V
fs  
V  
CC  
V
CC  
V
ppd  
CC  
V
inp  
V
inn  
to GND  
to GND  
0.2  
0.2  
V
CC  
V
CC  
+ 0.1  
V
Absolute Voltage Range  
+ 0.1  
V
Sampling Capacitance  
SYSTEM PERFORMANCE  
Resolution  
Measured with 1kHz, 1V Stimuli  
C
2
pF  
S
12  
0
Bits  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 1.8 V  
= 3.3 V  
= 1.8 V  
= 3.3 V  
= 1.8 V  
= 3.3 V  
= 1.8 V  
= 3.3 V  
2  
2  
2
2
Integral Nonlinearity (Note 3)  
Differential Nonlinearity (Note 3)  
Offset Error  
INL  
LSB  
0
1.5  
1.5  
0
1.5  
DNL  
LSB  
LSB  
0
1.5  
0
E
O
10  
0
10  
10  
Effective Number of bits  
Offset error drift with temperature  
Gain Error  
ENOB  
dV /dT  
11.2  
0.02  
0.3  
0.3  
0.0006  
ppm/°C  
%FS  
OS  
V
V
= 1.8 V  
= 3.3 V  
0.6  
0.6  
CC  
E
G
CC  
Gain error drift with temperature  
SAMPLING DYNAMICS  
Acquisition Time  
%FS/°C  
62.5  
ns  
Maximum throughput rate  
DYNAMIC CHARACTERISTICS  
2
MSPS  
f
IN  
f
IN  
f
IN  
f
IN  
= 1 kHz V = 3.3 V  
70  
65  
CC  
SignaltoNoise Ratio  
SNR  
THD  
dB  
dB  
= 1 kHz V = 1.8 V  
CC  
= 1 kHz V = 3.3 V  
80  
80  
CC  
TotalHarmonic Distortion  
= 1 kHz V = 1.8 V  
CC  
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3
NCD98010, NCD98011  
ELECTRICAL CHARACTERISTICS (T = 25°C, V = 3 V, unless otherwise noted)  
J
CC  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
DYNAMIC CHARACTERISTICS  
f
IN  
f
IN  
f
IN  
f
IN  
= 1 kHz V = 3.3 V  
68  
69  
69  
62  
80  
74  
CC  
SignaltoNoise and Distortion  
SINAD  
SFDR  
dB  
dB  
(Note 4)  
= 1 kHz V = 1.8 V  
CC  
= 1 kHz V = 3.3 V  
CC  
SpuriousFree Dynamic Range  
(Note 4)  
= 1 kHz V = 1.8 V  
CC  
DIGITAL INPUT/OUTPUT  
HighLevel Input Voltage  
LowLevel Input Voltage  
HighLevel Output Voltage  
LowLevel Output Voltage  
V
V
*0.7  
V
V
V
V
IH  
DD  
V
V
*0.3  
IL  
DD  
2 mA drive  
2 mA drive  
V
OH  
V
0.5 V  
DD  
V
OL  
GND+0.5  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Standby current includes both digital and analog currents.  
3. INL and DNL parameters were verified via bench testing and are not used for production screening.  
4. SINAD and SFDR are tested at production and guaranteed by correlation to bench test results.  
TIMING CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
TIMING SPECIFICATIONS  
Throughput  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
f
2
MSPS  
ms  
THROUGH  
Cycle Time  
f
0.5  
CYCLE  
Conversion Time  
f
437.5  
ns  
CONV  
Data Delay  
1
cycle  
TIMING REQUIREMENTS  
Acquisition Time (CSN high)  
CLK Frequency  
t
62.5  
ns  
MHz  
ns  
ACQ  
f
32  
CLK  
CLK Period  
t
31.25  
CLK  
st  
CSN Falling to 1 SCLK falling edge  
t
t
15.75  
15.75  
ns  
CSN_SCLK  
SCLK_CSN  
Last SCLK falling edge to CSN rising  
Falling SCLK to SDO valid (Note 5)  
ns  
Assumed 10 pF Load  
t
30  
ns  
SDO_VALID  
5. When SCLK is running at higher frequencies, the t  
of 30 ns requires SDO to be sampled on the falling edge of SCLK at the end  
SDO_VALID  
of the bit width just before SDO changes to the next output. This will ensure acquisition of the correct data. For example, location A shown  
below would be the best place to sample SDO for the acquisition of bit 9.  
tCYCLE  
tAQU  
tCONV  
Sample: N  
Sample: N+1  
tSCLK_CSN  
tCSN_SCLK  
tSCLK  
A
CSN  
SCLK  
OUT  
D11 D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
tSDO_VALID  
Data: N-1  
Figure 2. Serial Interface Timing  
www.onsemi.com  
4
 
NCD98010, NCD98011  
TYPICAL CHARACTERISTICS  
95  
90  
76  
75  
74  
73  
72  
71  
70  
69  
68  
THD  
85  
80  
SNR  
75  
70  
65  
60  
SNDR  
67  
66  
0
0
0
5
10  
15  
20  
25  
30  
35  
35  
35  
60 40 20  
0
20  
40  
60  
80 100  
SCLK FREQUENCY (MHz)  
TEMPERATURE (°C)  
Figure 3. SNR vs. SCLK Frequency  
Figure 4. SNR vs. Temperature  
95  
90  
12.0  
11.8  
11.6  
11.4  
85  
80  
75  
11.2  
11.0  
10.8  
10.6  
70  
65  
60  
10.4  
10.2  
10.0  
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
SCLK FREQUENCY (MHz)  
SCLK FREQUENCY (MHz)  
Figure 5. SNDR vs. SCLK Frequency  
Figure 6. ENOB vs. SCLK Frequency  
95  
90  
45  
40  
35  
30  
25  
20  
15  
DVDD = 3.3 V  
DVDD = 1.8 V  
85  
80  
75  
70  
10  
65  
60  
5
0
5
10  
15  
20  
25  
30  
60 40 20  
0
20  
40  
60  
80 100  
SCLK FREQUENCY (MHz)  
TEMPERATURE (°C)  
Figure 7. THD vs. SCLK Frequency  
Figure 8. DVDD Current vs. Temperature  
(SCLK = 2 kHz)  
www.onsemi.com  
5
NCD98010, NCD98011  
TYPICAL CHARACTERISTICS  
450  
400  
350  
300  
250  
200  
10  
9
AVDD = 3.3 V  
AVDD = 1.8 V  
8
DVDD  
7
6
5
4
3
2
150  
100  
AVDD  
25  
50  
0
1
0
0
5
10  
15  
20  
30  
35  
60 40 20  
0
20  
40  
60  
80 100  
SCLK (MHz)  
TEMPERATURE (°C)  
Figure 9. Current vs. SCLK Frequency  
Figure 10. AVDD Current vs. Frequency  
30  
25  
20  
15  
10  
5
0
1.5  
2.0  
2.5  
3.0  
3.5  
DVDD (V)  
Figure 11. SDO Delay from Falling Edge of  
SCLK  
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6
NCD98010, NCD98011  
TERMINOLOGY  
Understanding how ADC metrics affect application  
performance is key to obtaining desired performance. Key  
terminology are defined below and should be used when  
determining overall system performance when using the  
NDC98010/1.  
Positive Offset  
Error  
Ideal ADC  
Offset and Gain Error  
0
Offset and gain, if characterized, can be calibrated out post  
digitization. An ideal ADC has a linear transfer function  
following the equation y = m*x + b, where m is the gain and  
b is the offset. Ideally the offset would be 0, and the gain  
would be  
Negative  
Offset Error  
n1  
(
)
2
m +  
(eq. 1)  
VinputRange  
ADC Analog  
Input (V)  
VCM  
Any deviation from an offset of 0 and the ideal gain is  
considered error. Although these errors can be calibrated  
out, any initial gain error reduces the ADCs dynamic range.  
The plots below shows examples of these errors. Calibrating  
these errors out would be achieved by adding / subtracting  
codes to get the digitized output to 0 when the inputs are  
Figure 13. Offset Error Example  
SNR = (6.02N + 1.76) dB, where N is the number of bits.  
A 12 bit converter has a theoretical SNR of 74 dB.  
SINAD (or SNDR)  
shorted together at V . After the offset (for signed output  
CM  
SINAD is the signal to noise and distortion ratio. SINAD  
is the ratio of the RMS signal amplitude to the mean value  
of the root sum square (RSS) of all other spectral  
components, including harmonics, but excluding DC.  
SINAD is useful because it provides a metric for the ADCs  
overall dynamic performance, as it includes all components  
which make up noise and distortion.  
format) has been calibrated, samples can be taken at both  
polarities to determine the gain error. The output can be  
multiplied by a scale factor (after the offset has been  
adjusted) to compensate for the gain error.  
Positive Gain  
Error  
SFDR  
SFDR is the Spurious Free Dynamic Range. SFDR is the  
ratio of the RMS value of the signal to the RMS value of the  
highest magnitude spurious signal regardless of where it  
falls in the frequency spectrum. The highest spur might not  
be a harmonic, though it typically is.  
0
Ideal ADC  
THD  
THD is the total harmonic distortion, defined as ratio of  
the RMS of the primary signal and the mean of the root sum  
squared of all the harmonics. Generally only the first 5  
harmonics are considered. The figure below shows an  
example of these AC metrics in the frequency domain.  
Negative Gain  
Error  
2
2
2
4
2
ȡ
) H ȣ  
ǸH 2  
) H ) H  
3
ȧ
5ȧ  
Ȥ
ADC Analog  
Input (V)  
THD + 20 log  
(eq. 2)  
VCM  
H1  
Ȣ
Figure 12. Gain Error Example  
www.onsemi.com  
7
NCD98010, NCD98011  
ADC Full Scale  
ADC TRANSFER FUNCTION  
The NCD98010/1 offers a full input range of 0 V to VCC.  
The format of the digital output is offered in an unsigned  
format (NCD98010) and a signed format (NCD98011). The  
ADC Input (Sinusiod)  
SNR: RMS of Signal to RMS  
of noise floor  
output code resulting from V  
and V  
tied together and  
INN  
INP  
SFDR (dBc)  
Harmonics  
SINAD: RMS of Signal to RMS  
of noise + Harmonics  
held at VCC/2 is therefore 0h000 for the NCD98011 and  
0h100 for the NCD98010. This distinction is shown below  
in Figures 16 and 17.  
SFDR: Signal to largest non-  
fundamental content  
Noise Floor  
NCD98010  
Unsigned Output Format  
THD: RMS of Signal to mean  
value of RSS of its harmonics  
111111111111  
111111111110  
111111111101  
111111111100  
fSAMPLE/2  
Frequency  
Figure 14. Spurious Free Dynamic Range in the  
Frequency Domain  
.
.
.
100000000001  
100000000000  
011111111111  
011111111110  
ENOB  
The effective number of bits describes the dynamic range  
of the ADC. It quantifies the actual resolution of the ADC  
taking into account noise and distortion. ENOB typically  
changes over ADC input frequency, and is an important  
metric for nonDC applications. It is defined as:  
.
.
.
000000000100  
000000000010  
000000000001  
000000000000  
SINAD * 1.76  
ENOB +  
(eq. 3)  
6.02  
0 LSB  
V  
Full Scale  
Full Scale  
V
INP  
INN  
THEORY OF OPERATION  
The NCD98010/1 uses a successive approximation  
architecture. Conversion from an analog signal to a digital  
signal occurs in 2 different stages over 16 clock cycles. The  
first stage is a differential sample and hold operation, where  
the input Vinn and Vinp voltages are sampled onto a  
differential charge redistribution capacitive array. The  
second stage implements a binary decision tree, bit cycling  
through 1/2 divisions of the reference. The internal digital  
control block steps through each of 12 bits to determine  
whether that bit in the digital output code is higher or lower  
Figure 16. NCD98010 Unsigned Output Definition  
NCD98011  
Signed Output Format  
011111111111  
011111111110  
011111111101  
011111111100  
.
N
.
.
000000000010  
000000000001  
000000000000  
111111111111  
111111111110  
than the sampled signal. V acts as the analog supply and  
CC  
the ADC reference. This allows for a maximum input range  
of 0 V to V  
.
CC  
.
.
.
ADC  
100000000011  
100000000010  
100000000001  
100000000000  
Sample/Hold  
Bit Cycling for Current Sample and Data Transmission for Previous Sample  
Operation  
SCLK  
CSN  
0 LSB  
V  
Full Scale  
Full Scale  
V
INP  
INN  
Must be high for at least  
2 clock cycles  
Figure 17. NCD98011 Signed Output Definition  
Figure 15. SAR ADC Internal Operation  
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8
 
NCD98010, NCD98011  
APPLICATION INFORMATION  
The NCD98010/1 supports many application due to its small size and low power. The typical connection diagram for the  
NCD98010/1 maximizing performance is shown below in Figure 18.  
Input Buffer  
10kΩ  
Anti-Aliasing Filter  
VCC  
VDD  
VCC  
1μF  
1μF  
1μF  
10kΩ  
10kΩ  
+
RCM  
VCC VDD  
CCM  
CDIFF  
INP  
INN  
CSN  
OUT  
SCLK  
VCM  
RCM  
GND  
CCM  
-
NCD98010  
1μF  
10kΩ  
Figure 18. NCD Connection Diagram  
Buffering  
The common mode filter cutoff frequency should be no  
greater than the Nyquist frequency (F / 2). Set the  
differential cutoff frequency to be one decade less than the  
Many applications of the NCD98010/1 benefit by a  
differential input buffer. A unity gain buffer provides current  
drive to support the antialiasing filter and the 2 pF of ADC  
input capacitance for applications where very high input  
impedance is required. Input buffers also allow for control  
of the common mode voltage to maximize the full scale  
SAMPLE  
commonmode cutoff frequency by increasing the  
differential capacitor (C  
) by a factor of 10 over C  
.
DIFF  
CM  
This will help to reduce errors caused by common mode  
filter component mismatch. Selecting the appropriate values  
for the antialiasing filter is important to maintain peak  
performance. Adding resistors to the signal path will  
range of the ADC by setting V  
to VCC/2. Input buffers  
CM  
are recommended for applications where the source of the  
differential analog inputs require extremely high input  
impedance. Noise introduced by the input buffers should be  
less than the quantization noise of the ADC (74 dB SNR) to  
avoid becoming the dominant noise source. Use buffers with  
sufficient bandwidth (> Nyquist: F  
less than 1/2 LSB to avoid introducing additional noise and  
offset errors.  
introduce noise. Keeping R  
as small as possible will  
CM  
mitigate additional noise and error. The thermal noise  
introduced by the filter resistors can be calculated by:  
nV  
Hz  
+ Ǹ  
/ 2) and an offset  
ǒ Ǔ  
Vn  
4 @ k @ T @ RCM  
(eq. 6)  
SAMPLE  
Ǹ
(3) Noise introduced by series antialiasing filter.  
Where k = 1.38E23 J/K (Boltzmann’s constant) and T is the  
temperature in degree Kelvin.  
AntiAlias Filter  
The use of 2 common mode filters in addition to a  
differential filter is recommended to maintain high common  
mode rejection. These antialiasing filter are built using  
Using smaller resistors and larger capacitors to achieve  
the desired cutoff frequency will help mitigate noise and  
charge injection. When choosing antialiasing filter  
components, ensure that the settling time is short enough for  
the input to be within 1/2 LSB of the desired value before the  
CSN goes low to begin the conversion.  
R , C , and C  
CM CM  
as shown above in Figure 12 in the  
DIFF  
AntiAliasing Filter box. The equations for determining the  
cutoff frequencies of each filter are as follows:  
1
fcutoff_CM(HZ) +  
(eq. 4)  
(eq. 5)  
2p @ RCM @ CCM  
Power Supply Decoupling  
Local ADC supply decoupling is essential for maintaining  
high power supply rejection ratio. For the NCD98010/1, the  
analog supply (VCC) is also the reference for the ADC. Any  
noise or drift greater than 1/2 LSB will affect the DNL and  
INL of the converter. Use local decoupling capacitors of  
(1) Cutoff frequency for the common mode filters.  
1
fcutoff_DIFF(HZ) +  
2p @ 2RCM @ CDIFF  
(2) Cutoff frequency for the differential filter.  
www.onsemi.com  
9
 
NCD98010, NCD98011  
Minimal Component Realization  
1 mF. All decoupling capacitors must connect directly to a  
low impedance ground plane in order to be effective. Short  
traces or vias are required to minimize additional series  
inductance. Ceramic capacitors are recommended based on  
their low ESR and ESL. X7R ceramic capacitors are  
For applications where minimizing board space trumps  
ADC performance, the NCD98010/1 connection diagram  
can be reduced as shown in Figure 19 below. The removal  
of the input buffering may be an option depending on the  
nature of the differential analog input source. Removing the  
antialiasing filter would come at the expense of reduced  
ENOB due to the digitization of aliased signals.  
recommended for applications involving  
temperature range.  
a
wide  
Anti-Aliasing Filter  
VDD  
1μF  
1μF  
CCM  
VCC VDD  
+
-
INP  
INN  
CSN  
RCM  
OUT  
SCLK  
GND  
RCM  
CCM  
NCD98010  
Figure 19. Reduced Component Connection Diagram  
Output Timing / Definition  
Figure 20 below shows the NCD98010/1 output format. There is a 1 sample latency associated with the output data. The  
digital data for analog input sampled are clocked out of the ADC by SCLK one conversion later, as shown in the diagram below.  
Sample: N  
Sample: N+1  
Sample: N+2  
CSN  
SCLK  
OUT  
D11 D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
D11 D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Data: N-1  
Figure 20. NCD98010/1 Output Format  
Data: N  
Layout Guidelines  
Ideal PCB layouts have a ground plane placed underneath  
the device and the PCB is partitioned into digital and analog  
sections supporting the analog inputs to the ADC on one  
side, and the digital interface on the other side. To avoid the  
coupling of digital noise into the analog partition, care must  
be taken not to cross digital signals with the analog input  
signals. Keep the analog input signals and the VCC supply  
/ reference signal away from noise digital signals.  
Recommended bypass capacitances should be places as  
close as possible to the VCC and VDD pins, and the path to  
ground needs to be a low inductance low resistance local  
connection.  
www.onsemi.com  
10  
 
NCD98010, NCD98011  
PACKAGE DIMENSIONS  
US8  
CASE 49302  
ISSUE B  
X−  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
8
5
J
Y−  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION “A” DOES NOT INCLUDE MOLD  
FLASH, PROTRUSION OR GATE BURR.  
MOLD FLASH. PROTRUSION AND GATE  
BURR SHALL NOT EXCEED 0.140 MM  
(0.0055”) PER SIDE.  
4. DIMENSION “B” DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH AND PROTRUSION  
SHALL NOT E3XCEED 0.140 (0.0055”) PER  
SIDE.  
DETAIL E  
B
L
5. LEAD FINISH IS SOLDER PLATING WITH  
THICKNESS OF 0.00760.0203 MM.  
(300800 “).  
6. ALL TOLERANCE UNLESS OTHERWISE  
SPECIFIED 0.0508 (0.0002 “).  
1
4
R
G
S
U
P
MILLIMETERS  
INCHES  
DIM  
A
B
C
D
F
G
H
J
K
L
M
N
P
R
S
MIN  
1.90  
2.20  
0.60  
0.17  
0.20  
0.50 BSC  
0.40 REF  
0.10  
MAX  
2.10  
2.40  
0.90  
0.25  
0.35  
MIN  
MAX  
0.083  
0.094  
0.035  
0.010  
0.014  
C
0.075  
0.087  
0.024  
0.007  
0.008  
0.020 BSC  
0.016 REF  
H
T−  
0.10 (0.004)  
T
K
SEATING  
D
N
PLANE  
R 0.10 TYP  
M
0.10 (0.004)  
T
X Y  
0.18  
0.10  
3.20  
6
0.004  
0.007  
0.004  
0.126  
6
V
0.00  
3.00  
0
0.000  
0.118  
0
M
_
_
_
_
5
10  
5
10  
_
_
_
_
0.23  
0.23  
0.37  
0.60  
0.34  
0.33  
0.47  
0.80  
0.010  
0.009  
0.015  
0.024  
0.013  
0.013  
0.019  
0.031  
F
DETAIL E  
U
V
0.12 BSC  
0.005 BSC  
SOLDERING FOOTPRINT*  
3.8  
0.015  
1.8  
0.07  
0.50  
0.0197  
0.30  
0.012  
1.0  
0.0394  
mm  
inches  
ǒ
Ǔ
SCALE 8:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
11  
NCD98010, NCD98011  
PACKAGE DIMENSIONS  
X2QFN8, 1.5x1.5, 0.5P  
CASE 722AM  
ISSUE O  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
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