NCN2411MTTWG [ONSEMI]

4 沟道差分,1:2 Mux/Demux,用于 PCI Express Gen2;
NCN2411MTTWG
型号: NCN2411MTTWG
厂家: ONSEMI    ONSEMI
描述:

4 沟道差分,1:2 Mux/Demux,用于 PCI Express Gen2

PC
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NCN2411  
4-Channel Differential 1:2  
Mux/Demux Switch for  
PCI Express Gen2  
The NCN2411 is a 4Channel differential SPDT switch designed to  
route PCI Express Gen2 signals. When used in a PCI Express  
application, the switch can handle up to two PCIe lanes. Due to the  
ultralow ONstate capacitance (2 pF typ) and resistance (7.5 W typ),  
this switch is ideal for switching high frequency signals up to a signal  
bit rate (BR) of 5 Gbps. This switch pinout is designed to be used in  
BTX form factor desktop PCs and is available in a spacesaving  
3.5x9x0.75 mm WQFN42 package.  
http://onsemi.com  
MARKING  
DIAGRAM  
NCN2411  
AWLYYWWG  
1
Features  
WQFN42  
CASE 510AP  
V Power Supply from 1.5 V to 2.0 V  
DD  
4 Differential Channels 2:1 MUX/DEMUX  
Compatible with PCIe 2.0  
A
= Assembly Location  
WL  
YY  
WW  
G
= Wafer Lot  
= Year  
= Work Week  
Data Rate: Supports 5 Gbps  
Low Crosstalk: 30 dB @ 3 GHz  
= PbFree Package  
Low BittoBit Skew: 5 ps  
Low R Resistance: 13 W max  
ON  
Low C Capacitance: 2 pF  
ON  
Low Supply Current: 200 mA  
Insertion Loss: 2 dB @ 3 GHz  
Space Saving, Small WQFN42 Package  
This is a PbFree Device  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCN2411MTTWG WQFN42 2000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Typical Applications  
Notebook Computer  
Desktop computer  
Server/Storage Area Network  
B0 +/−  
B1 +/−  
A0 +/−  
A1 +/−  
A2 +/−  
A3 +/−  
B2 +/−  
B3 +/−  
C0 +/−  
C1 +/−  
C2 +/−  
C3 +/−  
PCI Express  
Controller  
NCN2411  
Figure 1. Application Schematic  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
August, 2011 Rev. 0  
NCN2411/D  
NCN2411  
A0+  
A0  
A1+  
A1−  
B0+  
B0−  
B1+  
B1−  
C0+  
C0−  
C1+  
C1−  
A2+  
A2−  
A3+  
A3−  
B2+  
B2−  
B3+  
B3−  
C2+  
C2−  
C3+  
C3−  
SEL  
Figure 2. NCN2411 Functional Block Diagram  
(Top View)  
TRUTH TABLE  
Function  
SEL  
L
A
N
N
to B  
N
A
to C  
H
N
http://onsemi.com  
2
NCN2411  
GND  
A0+  
1
2
38 B0+  
37 B0−  
A0−  
3
36 B1+  
4
5
35 B1−  
GND  
VDD  
34 C0+  
A1+  
A1−  
VDD  
SEL  
6
7
8
9
33 C0−  
32 C1+  
31 C1−  
30 VDD  
Exposed Pad  
on  
Underside  
(Connect to Gnd)  
GND  
A2+  
10  
11  
29 B2+  
28 B2−  
27 B3+  
26 B3−  
25 C2+  
24 C2−  
A212  
VDD  
GND  
A3+  
13  
14  
15  
A316  
23 C3+  
GND  
17  
22 C3−  
Figure 3. Pin Description  
(Top View)  
http://onsemi.com  
3
NCN2411  
PIN FUNCTION AND DESCRIPTION  
Pin  
Pin Name  
A0+, A0−  
A1+, A1−  
A2+, A2−  
A3+, A3−  
B0+, B0−  
B1+, B1−  
B2+, B2−  
B3+, B3−  
C0+, C0−  
C1+, C1−  
C2+, C2−  
C3+, C3−  
SEL  
Description  
2, 3  
Signal I/0, Channel 0, Port A  
Signal I/0, Channel 1, Port A  
Signal I/0, Channel 2, Port A  
Signal I/0, Channel 3, Port A  
Signal I/0, Channel 0, Port B  
Signal I/0, Channel 1, Port B  
Signal I/0, Channel 2, Port B  
Signal I/0, Channel 3, Port B  
Signal I/0, Channel 0, Port C  
Signal I/0, Channel 1, Port C  
Signal I/0, Channel 2, Port C  
Signal I/0, Channel 3, Port C  
6, 7  
11, 12  
15, 16  
38, 37  
36, 35  
29, 28  
27, 26  
34, 33  
32, 31  
25, 24  
23, 22  
9
Operational Mode Select (When SEL = 0: A B, When SEL = 1: A C) Do not float this pin.  
5, 8, 13, 18,  
20, 30, 40, 42  
VDD  
DC Supply: 1.5 V to 2.0 V  
1, 4, 10, 14,  
17, 19, 21,  
39, 41  
GND  
Power Ground  
Exposed Pad  
The exposed pad on the backside of package is internally connected to GND. Externally the pad should  
also be userconnected to GND.  
MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
Units  
Power Supply Voltage  
V
0.5 to 2.5  
V
V
V
DD  
DC  
DC  
DC  
Input/Output Voltage Range of the Switch (A , B , C )  
V
0.5 to V  
0.5 to V  
120  
N
N
N
IS  
DD  
DD  
Selection Pin Voltages  
V
SEL  
Continuous Current Through One Switch  
Maximum Junction Temperature (Note 1)  
Operating Ambient Temperature  
Storage Temperature Range  
I
cc  
mA  
°C  
°C  
°C  
°C/W  
mA  
V
T
150  
J
T
40 to +85  
65 to +150  
75  
A
T
stg  
Thermal Resistance, JunctiontoAir  
Latchup Current (Note 2)  
R
q
JA  
I
LU  
100  
Human Body Model (HBM) ESD Rating (Note 3)  
Machine Model (MM) ESD Rating (Note 3)  
Moisture Sensitivity (Note 4)  
ESD HBM  
ESD MM  
MSL  
7000  
400  
V
Level 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Power dissipation must be considered to ensure maximum junction temperature (T ) is not exceeded.  
J
2. Latch up Current Maximum Rating: 100 mA per JEDEC standard: JESD78.  
3. This device series contains ESD protection and passes the following tests:  
Human Body Model (HBM) 7.0 kV per JEDEC standard: JESD22A114 for all pins.  
Machine Model (MM) 400 V per JEDEC standard: JESD22A115 for all pins.  
4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: JSTD020A.  
http://onsemi.com  
4
 
NCN2411  
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (T = 40°C to +85°C, V = 1.5 V to 2.0 V, GND = 0V)  
A
DD  
Symbol  
Pins  
Parameters  
Conditions (Note 5)  
Min.  
Typ  
Max.  
Units  
(Note 6)  
POWER SUPPLY  
V
V
DD  
V
DD  
, GND  
, GND  
Supply Voltage Range  
With respect to GND  
1.5  
1.8  
2.0  
V
DD  
DD  
I
Quiescent Supply Current  
V
DD  
= 2 V, V  
= GND or V  
DD  
200  
300  
mA  
SEL  
DATA SWITCH PERFORMANCE  
V
A , B , C  
Data Input/Output  
Voltage Range  
0
1.2  
13  
V
W
IS  
N
N
N
R
R
B
N
On Resistance (B )  
V
DD  
V
DD  
V
DD  
V
DD  
= 1.5 V, V = 0 V to 1.2 V,  
7.5  
8.0  
0.1  
0.1  
ON  
ON  
N
IS  
I
= 15 mA  
IS  
C
N
B
N
C
N
B
N
C
N
On Resistance (C )  
= 1.5 V, V = 0 V to 1.2 V,  
13  
W
N
IS  
I
IS  
= 15 mA  
R
R
On Resistance Flatness  
On Resistance Flatness  
On Resistance  
= 1.5 V, V = 0 V to 1.2 V,  
1.24  
1.24  
0.35  
0.35  
W
ON(flat)  
ON(flat)  
IS  
I
IS  
= 15 mA (Note 7)  
= 1.5 V, V = 0 V to 1.2 V,  
W
IS  
I
IS  
= 15 mA (Note 7)  
DR  
DR  
V
= 1.5 V, V = 0 V,  
W
ON  
ON  
DD  
IS  
IS  
Matching(B )  
I
= 15 mA (Note 7)  
N
On Resistance  
V
= 1.5 V, V = 0 V,  
W
DD  
IS  
IS  
Matching(C )  
I
= 15 mA (Note 7)  
N
C
A
to B ,  
On Capacitance  
f = 1 MHz, Switch On, Open  
Output  
2.0  
1.5  
pF  
pF  
mA  
ON  
N
N
N
A
to C  
N
C
A
to B ,  
Off Capacitance  
f = 1 MHz, Switch Off  
OFF  
ON  
N
N
A
to C  
N
N
I
A
to B ,  
On Leakage Current  
V
V
= 2 V, V = 0 V, 1.2 V, Switch  
1  
1  
+1  
+1  
N
N
DD  
AN  
A
to C  
On to B /C , B /C pins are  
N
N
N N N N  
unconnected  
= 2 V, V = 0 V, 1.2 V, Switch  
I
A
to B ,  
Off Leakage Current  
mA  
OFF  
N
N
DD  
AN  
A
to C  
Off to B /C , V /V = 1.2 V, 0 V  
N
N
N N BN CN  
LOGIC INPUT CHARACTERISTICS (SEL Pin)  
V
SEL  
Input HIGH Voltage  
(Note 7)  
(Note 7)  
0.65 x  
DD  
V
V
V
IH  
DD  
V
V
SEL  
Input LOW Voltage  
0
0.35 x  
IL  
V
DD  
V
SEL  
SEL  
SEL  
Clamp Diode Voltage  
Input HIGH Current  
Input LOW Current  
V
= Max, I = 18mA  
SEL  
0.7  
1.2  
5
V
IK  
DD  
I
IH  
V
= Max, V  
= V  
DD  
mA  
mA  
DD  
SEL  
SEL  
I
IL  
V
= Max, V  
= GND  
5
DD  
SWITCHING CHARACTERISTICS  
t
SEL, A ,  
Line Enable Time  
Line Disable Time  
SEL to A , B , C  
N
L L  
8.0  
5.0  
ns  
ns  
SELON  
N
N
N
B /C  
R = 50 W, C = 20 pF  
N
N
t
SEL, A ,  
SEL to A , B , C  
N N N  
SELOFF  
N
N
B /C  
N
R = 50 W, C = 20 pF  
L L  
t
A , B /C  
N
Bittobit skew  
Within the same differential pair  
9.0  
50  
ps  
ps  
bb  
N
N
t
A , B  
N N  
Channelto channel skew  
Maximum skew between all  
channels  
chch  
5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.  
6. Typical values are at V = 1.8 V, T = 25°C ambient and maximum loading.  
DD  
A
7. Guaranteed by design and/or characterization.  
http://onsemi.com  
5
NCN2411  
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (T = 40°C to +85°C, V = 1.5 V to 2.0 V, GND = 0V)  
A
DD  
Symbol  
Pins  
Parameters  
Conditions (Note 5)  
Min.  
Typ  
Max.  
Units  
(Note 6)  
DYNAMIC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE  
BR  
A
to B ,  
Signal Bit Rate  
5.0  
Gbps  
N
N
N
A
to C  
N
D
A
to B ,  
Differential Insertion Loss  
f = 3 GHz  
f = 100 MHz  
f = 3 GHz  
2.0  
0.7  
30  
58  
23  
58  
6.0  
22  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
IL  
N
N
N
A
to C  
N
D
A , B , C  
N N  
Differential Crosstalk  
Differential Off Isolation  
Differential Return Loss  
CTK  
N
f = 100 MHz  
f = 3 GHz  
D
A to B ,  
N N  
A
ISO  
to C  
N
N
f = 100 MHz  
f = 3 GHz  
D
A
to B ,  
RL  
N
N
A
to C  
N
N
f = 100 MHz  
5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.  
6. Typical values are at V = 1.8 V, T = 25°C ambient and maximum loading.  
DD  
A
7. Guaranteed by design and/or characterization.  
http://onsemi.com  
6
 
NCN2411  
TYPICAL OPERATING CHARACTERISTICS  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100000000  
1E+09  
1E+10  
FREQUENCY (Hz)  
Figure 4. PCI Express Eye Diagram at 5 Gbps,  
800 mVpp Differential Swing (Minimum Case)  
Figure 5. Differential Off Isolation  
0
4  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
8  
12  
16  
20  
24  
28  
100  
100000000  
1E+09  
1E+10  
100000000  
1E+09  
1E+10  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 6. Differential Crosstalk  
Figure 7. Differential Return Loss  
9
8.5  
8
7.5  
7
6.5  
6
0
0.2  
0.4  
0.6  
0.8  
(V)  
1
1.2  
1.4  
1.6  
V
IS  
Figure 8. RON vs. VIS  
http://onsemi.com  
7
NCN2411  
PARAMETER MEASUREMENT INFORMATION  
Figure 9. Differential Insertion Loss (SDD21) and  
Differential Return Loss (SDD11  
Figure 10. Differential Off Isolation (SDD21)  
)
t
= |t  
-t  
| or |t  
-t  
|
skew  
PLH1 PLH2  
PHL1 PHL2  
Figure 11. Differential Crosstalk (SDD21  
)
Figure 12. BittoBit and ChanneltoChannel Skew  
Figure 13. tON and tOFF  
Figure 14. Off State Leakage  
Figure 15. On State Leakage  
http://onsemi.com  
8
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WQFN42 3.5x9, 0.5P  
CASE 510AP01  
ISSUE O  
DATE 15 FEB 2010  
1
SCALE 2:1  
NOTES:  
A B  
D
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
L
L
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.15 AND 0.30 MM  
FROM TERMINAL TIP.  
4. COPLANARITY APPLIES TO THE EXPOSED PAD  
AS WELL AS THE TERMINALS.  
PIN ONE  
REFERENCE  
L1  
DETAIL A  
MILLIMETERS  
ALTERNATE TERMINAL  
CONSTRUCTIONS  
E
DIM MIN  
MAX  
0.80  
0.05  
A
A1  
A3  
b
0.70  
0.00  
0.20 REF  
EXPOSED Cu  
MOLD CMPD  
0.20  
0.30  
D
D2  
E
3.50 BSC  
0.15  
C
1.95  
2.15  
9.00 BSC  
E2  
e
K
L
L1  
7.45  
0.50 BSC  
0.20  
0.30  
0.00  
7.65  
0.15  
C
DETAIL B  
TOP VIEW  
ALTERNATE  
−−−  
0.50  
0.15  
CONSTRUCTION  
A
0.10  
0.08  
C
C
A3  
GENERIC  
MARKING DIAGRAM*  
DETAIL B  
NOTE 4  
A1  
K
XXXXXXXX  
XXXXXXXX  
AWLYYWWG  
SEATING  
PLANE  
C
SIDE VIEW  
0.10  
C
A
B
XXXXX = Specific Device Code  
D2  
DETAIL A  
A
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= PbFree Package  
WL  
YY  
WW  
G
22  
17  
42X  
L
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present.  
42X  
b
E2  
0.10  
0.05  
C
C
A
B
NOTE 3  
RECOMMENDED  
MOUNTING FOOTPRINT  
1
38  
0.10  
C A  
B
9.30  
42X  
0.63  
e
e/2  
0.50  
PITCH  
BOTTOM VIEW  
2.16  
3.80  
1
42X  
0.35  
PACKAGE  
OUTLINE  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON48316E  
WQFN42 3.5X9, 0.5P  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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