NCP140AMXD330TCG [ONSEMI]
LDO Voltage Regulator - Capacitor Free, Low Noise 150 mA;型号: | NCP140AMXD330TCG |
厂家: | ONSEMI |
描述: | LDO Voltage Regulator - Capacitor Free, Low Noise 150 mA |
文件: | 总15页 (文件大小:779K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCP140
LDO Voltage Regulator -
Capacitor Free, Low Noise
150 mA
The NCP140 is a 150 mA very low dropout regulator which offers
excellent voltage accuracy and clean output voltage for power
sensitive application. The NCP140 is very suitable for battery
powered application due to very low quiescent current and virtually
zero current at disable mode. This device is stable with or without
output capacitors and allows minimize footprint and BOM. The
XDFN4 package is optimized for use in space constrained
applications.
www.onsemi.com
T
MARKING
DIAGRAMS
XM
M
XDFN4, 0.8x0.8
CASE 711BF
1
1
Features
• Stable Operation with or without Capacitors
• Operating Input Voltage Range: 1.6 V to 5.5 V
X
= Specific Device Code
MM = Date Code
• Available in Fixed Voltage Options: 1.5 V to 5 V
Contact Factory for Other Voltage Options
XDFN4, 1.0x1.0
CASE 711AJ
XX M
1
•
1% Typical Accuracy @ 25°C
• Very Low Quiescent Current of Typ. 45 mA
• Standby Current: 0.1 mA
1
XX = Specific Device Code
M
= Date Code
• Very Low Dropout: 125 mV for 3.3 V @ 150 mA
• High PSRR: 55 dB @ 1 kHz
• Available in − XDFN4 − 0.8 mm x 0.8 mm x 0.4 mm Package
− XDFN4 − 1.0 mm x 1.0 mm x 0.4 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
EN
3
IN
4
Typical Applications
• Battery−powered Equipment
• Smartphones, Tablets
• Cameras, DVRs, STB and Camcorders
2
1
GND
OUT
V
IN
V
OUT
(Bottom View)
IN
OUT
NCP140
GND
EN
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of
this data sheet.
ON
OFF
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2019 − Rev. 2
NCP140/D
NCP140
IN
ENABLE
LOGIC
THERMAL
SHUTDOWN
EN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
INTEGRATED
SOFT−START
OUT
*ACTIVE DISCHARGE
EN
GND
*Active output discharge is available only for NCP140Axxx options.
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
OUT
GND
EN
Description
1
2
3
4
−
Regulated output voltage pin. A small ceramic capacitor can be connected to improve fast load transient.
Ground pin
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode.
Input pin
IN
EPAD
Expose pad must be connect to GND pin as short as possible. Soldered to a large ground copper plane al-
lows for effective heat removal.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input Voltage (Note 1)
V
IN
−0.3 V to 6
Output Voltage
V
OUT
−0.3 V to V + 0.3 V or 6 V
V
IN
Chip Enable Input
V
−0.3 V to 6 V
unlimited
150
V
CE
SC
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
t
s
T
°C
°C
V
J
T
STG
−55 to 150
2000
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESD
HBM
ESD
200
V
MM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
252
Unit
°C/W
°C/W
Thermal Characteristics, XDFN4 0.8 mm x 0.8 mm Thermal Resistance, Junction−to−Air (Note 3)
Thermal Characteristics, XDFN4 1.0 mm x 1.0 mm Thermal Resistance, Junction−to−Air (Note 3)
R
q
JA
R
265
q
JA
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
www.onsemi.com
2
NCP140
ELECTRICAL CHARACTERISTICS −40°C ≤ T ≤ 85°C; V = V
+ 0.5 V; I
= 1 mA, C = C
= none, unless
J
IN
OUT(NOM)
OUT
IN
OUT
otherwise noted. V = 0.9 V. Typical values are at T = +25°C. Min/Max values are for −40°C ≤ T ≤ 85°C (Note 3)
EN
J
J
Parameter
Test Conditions
Symbol Min
Typ.
Max
Unit
V
Operating Input Voltage
Output Voltage Accuracy
V
IN
1.6
5.5
V
V
≥ 1.8 V, T = 25°C
V
OUT
1
%
OUT
J
< 1.8 V, T = 25°C
20
mV
%
OUT
J
V
V
≥ 1.8 V, −40°C ≤ T ≤ 85°C
−2
+2
+50
5.0
30
OUT
OUT
J
< 1.8 V, −40°C ≤ T ≤ 85°C
−50
mV
mV
mV
mV
J
Line Regulation
V
+ 0.5 V ≤ V ≤ 5.5 V
Line
Reg
1.0
10
OUT(NOM)
IN
Load Regulation
I
= 0 mA to 150 mA
Load
Reg
OUT
Dropout Voltage (Note 5)
V
= 1.8 V
= 3.3 V
V
DO
255
125
230
250
45
390
220
OUT(NOM)
OUT(NOM)
I
= 150 mA
OUT
V
Output Current Limit
Short Circuit Current
Quiescent Current
V
= 90% V
I
CL
mA
mA
mA
mA
V
OUT
OUT(NOM)
V
OUT
= 0V
I
SC
I
= 0 mA
I
Q
75
OUT
Shutdown Current
V
≤ 0.4 V, V = 5.5 V
I
0.1
1.0
EN
IN
DIS
EN Pin Threshold Voltage
EN Input Voltage “H”
EN Input Voltage “L”
V
ENH
0.9
V
0.4
1.0
ENL
EN
EN Pin Current
V
EN
= 5.5 V
I
0.01
100
mA
ms
Turn−On Time
C
= 1 mF, I
=150 mA,
OUT
T
ON
OUT
OUT
From assertion of V to V
= 98%V
EN
OUT(NOM)
Power Supply Rejection Ratio
Output Noise Voltage
f = 100 Hz
f = 1 kHz
PSRR
62
55
17
dB
V
IN
= 3.5 V, V
= 2.5 V,
OUT(NOM)
I
= 10 mA
OUT
V
OUT
= 2.3 V, V
= 1.8 V,
V
N
mV
RMS
IN
OUT(NOM)
I
= 10 mA f = 100 Hz to 100 kHz
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Output Discharge Pull−Down
Temperature increasing from T = +25°C
T
160
20
°C
°C
W
J
SD
Temperature falling from T
T
SDH
SD
V
EN
≤ 0.4 V, A options only
R
100
DISCH
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
falls 100 mV below V
.
OUT
OUT(NOM)
www.onsemi.com
3
NCP140
TYPICAL CHARACTERISTICS
1.810
1.805
1.800
1.795
1.790
1.785
1.780
1.775
1.770
3.34
3.33
I
= 1 mA
OUT
3.32
3.31
3.30
3.29
3.28
3.27
3.26
I
= 1 mA
OUT
I
= 150 mA
OUT
I
= 150 mA
OUT
V
V
C
C
= 2.3 V
V
V
C
C
= 3.8 V
IN
IN
= 1.8 V
= 3.3 V
= 1 mF
OUT
OUT
= 1 mF
IN
IN
3.25
3.24
1.765
1.760
= 1 mF
= 1 mF
OUT
OUT
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Output Voltage vs. Temperature −
OUT = 1.8 V
Figure 4. Output Voltage vs. Temperature −
V
VOUT = 3.3 V
5.0
4.5
2.50
2.25
V
V
= 4.3 to 5.5 V
= 3.3 V
V
V
= 2.3 to 5.5 V
IN
IN
= 1.8 V
OUT
OUT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
C
C
= 1 mF
= 1 mF
C
C
= 1 mF
IN
OUT
IN
= 1 mF
OUT
0.5
0
0.25
0
−40 −25 −10
5
20
35
50
65
80
95
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Line Regulation vs. Temperature −
OUT = 1.8 V
Figure 6. Line Regulation vs. Temperature −
V
VOUT = 3.3 V
15.0
13.5
12.0
10.5
9.0
15.0
13.5
12.0
10.5
9.0
V
V
I
C
C
= 3.8 V
V
V
I
C
C
= 2.3 V
IN
IN
= 3.3 V
= 1.8 V
OUT
OUT
= 0 to 150 mA
= 1 mF
= 0 to 150 mA
= 1 mF
OUT
OUT
IN
OUT
IN
OUT
= 1 mF
= 1 mF
7.5
7.5
6.0
6.0
V
V
C
C
= 3.8 V
4.5
4.5
IN
= 1.8 V
= 1 mF
OUT
3.0
3.0
IN
1.5
0
1.5
0
−40 −20
= 1 mF
OUT
−40 −25 −10
5
20
35
50
65
80
95
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Load Regulation vs. Temperature −
OUT = 1.8 V
Figure 8. Load Regulation vs. Temperature −
V
VOUT = 3.3 V
www.onsemi.com
4
NCP140
TYPICAL CHARACTERISTICS
47
46
45
44
43
42
41
40
39
47
46
T = 85°C
J
T = 85°C
45
44
43
42
41
40
39
J
T = 25°C
J
T = 25°C
J
T = −40°C
J
T = −40°C
J
V
V
C
C
= 3.8 V
V
V
C
C
= 2.3 V
IN
IN
= 3.3 V
= 1 mF
= 1.8 V
OUT
OUT
= 1 mF
IN
IN
= 1 mF
38
37
38
37
= 1 mF
OUT
OUT
0
15 30 45
60 75 90 105 120 135 150
0
15 30 45 60 75 90 105 120 135 150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Ground Current vs. Load Current −
OUT = 1.8 V
Figure 10. Ground Current vs. Load Current −
V
VOUT = 3.3 V
50
45
40
35
30
25
20
15
50
45
40
35
30
25
20
15
10
T = 85°C
J
T = 25°C
J
T = −40°C
J
T = 85°C
J
V
V
= 3.8 V
V
V
= 2.3 V
IN
IN
T = 25°C
J
= 3.3 V
= 1.8 V
= 1 mF
OUT
OUT
C
C
I
= 1 mF
C
C
I
IN
IN
10
= 1 mF
= 1 mF
OUT
OUT
= 0 mA
= 0 mA
5
0
5
0
OUT
OUT
T = −40°C
J
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
IN
, INPUT VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Quiescent Current vs. Input Voltage −
OUT = 1.8 V
Figure 12. Quiescent Current vs. Input Voltage −
V
VOUT = 3.3 V
350
315
280
245
210
175
140
105
70
200
180
160
140
120
100
80
V
C
C
= 1.8 V
= 1 mF
= 1 mF
V
C
C
= 3.3 V
= 1 mF
= 1 mF
OUT
OUT
T = 85°C
IN
IN
J
OUT
OUT
T = 85°C
J
T = 25°C
J
T = 25°C
J
T = −40°C
J
T = −40°C
J
60
40
35
0
20
0
0
15 30 45 60 75 90 105 120 135 150
, OUTPUT CURRENT (mA)
0
15 30 45
60 75 90 105 120 135 150
I
I , OUTPUT CURRENT (mA)
OUT
OUT
Figure 13. Dropout Voltage vs. Load Current −
OUT = 1.8 V
Figure 14. Dropout Voltage vs. Load Current −
V
VOUT = 3.3 V
www.onsemi.com
5
NCP140
TYPICAL CHARACTERISTICS
350
315
280
1245
210
175
140
105
70
200
V
C
C
= 1.8 V
= 1 mF
= 1 mF
OUT
V
C
C
= 3.3 V
= 1 mF
= 1 mF
OUT
180
160
140
120
100
80
I
= 150 mA
= 75 mA
OUT
IN
IN
OUT
OUT
I
= 150 mA
= 75 mA
OUT
I
OUT
I
OUT
60
40
I
= 10 mA
80 95
OUT
I
= 10 mA
80
OUT
20
0
35
0
−40 −25 −10
5
20
35
50
65
95
−40 −25 −10
5
20
35
50
65
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 15. Dropout Voltage vs. Temperature −
Figure 16. Dropout Voltage vs. Temperature −
V
OUT = 1.8 V
VOUT = 3.3 V
300
285
270
255
240
225
210
195
180
300
285
270
255
240
V
= 3.3 V
= 1.8 V
OUT
V
= 3.3 V
= 1.8 V
OUT
V
OUT
225
210
195
180
V
OUT
V
V
C
C
= V
+ 0.5 V
V
V
C
C
= V
+ 0.5 V
IN
OUT(nom)
= 0 V (short)
IN
OUT(nom)
= 90% V
OUT
= 1 mF
OUT
= 1 mF
IN
OUT
OUT(nom)
IN
165
150
165
150
= 1 mF
= 1 mF
50 65
T , JUNCTION TEMPERATURE (°C)
OUT
−40 −25 −10
5
20
35
80 95
−40 −25 −10
5
20
35
50
65
80 95
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 17. Current Limit vs. Temperature
Figure 18. Short Circuit Current vs.
Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
500
450
400
350
300
250
200
150
100
OFF −> ON
ON −> OFF
V
V
C
C
= 4.3 V
V
V
C
C
= 4.3 V
IN
IN
= 3.3 V
= 3.3 V
= 1 mF
OUT
OUT
= 1 mF
IN
IN
0.1
0
−40 −20
50
0
= 1 mF
= 1 mF
OUT
OUT
0
20
40
60
80 100 120 140
−40 −25 −10
5
20
35
50
65
80 95
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 19. Enable Threshold Voltage vs.
Temperature
Figure 20. Enable Current vs. Temperature
www.onsemi.com
6
NCP140
TYPICAL CHARACTERISTICS
100
80
150
140
130
120
110
100
90
V
V
C
C
= 4.3 V
IN
= 3.3 V
= 1 mF
OUT
60
IN
40
= 1 mF
OUT
20
0
−20
−40
−60
V
V
C
C
= 4.3 V
80
IN
= 3.3 V
= 1 mF
OUT
70
IN
−80
60
50
−40 −20
= 1 mF
OUT
−100
−40 −20
0
20
40
60
80
100 120 140
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Disable Current vs. Temperature
Figure 22. Discharge Resistivity vs.
Temperature
10K
1K
I
= 150 mA
OUT
RMS Output Noise (mV)
I
10 Hz − 100 kHz
26.21
100 Hz − 100 kHz
17.94
OUT
100
10 mA
150 mA
27.51
19.11
V
V
C
C
= 2.8 V
IN
= 1.8 V
= 1 mF
10
1
OUT
I
= 10 mA
OUT
IN
= 1 mF
OUT
10
100
1K
10K
100K
1M
FREQUENCY (kHz)
Figure 23. Output Voltage Noise Spectral Density − VOUT = 1.8 V
80
70
90
I
= 1 mA
V
V
C
C
= 2.3 V+100mVpp
IN
V
V
C
C
= 3.8 V+100mVpp
= 3.3 V
OUT
IN
80
70
60
50
40
30
= 1.8 V
OUT
I
= 1 mA
OUT
I
= 10 mA
OUT
OUT
= none
IN
= none
IN
OUT
60
50
40
30
20
= 1 mF MLCC 1206
OUT
= 1 mF MLCC 1206
I
= 10 mA
OUT
I
= 75 mA
OUT
I
= 75 mA
OUT
I
= 150 mA
OUT
20
10
0
I
= 150 mA
OUT
10
0
10
100
1K
10K
100K
1M
10M
10
100
1K
10K
100K
1M
10M
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 24. PSRR for Various Output Currents,
OUT = 1.8 V
Figure 25. PSRR for Various Output Currents,
VOUT = 3.3 V
V
www.onsemi.com
7
NCP140
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
80
C
= 470 nF
OUT
70
60
50
40
30
20
V
= 3.8 V
IN
C
= 1 mF
OUT
V
IN
= 3.3 V
V
= 5.5 V
C
= 4.7 mF
IN
OUT
V
IN
= 2.3 V
V
V
I
C
C
= 100mVpp
= 3.3 V
RIPPLE
V
V
C
C
= 3.8 V+100mVpp
IN
OUT
= 3.3 V
OUT
= 10 mA
OUT
= none
IN
10
0
10
0
= none
IN
OUT
= MLCC 1206
C
= none
OUT
OUT
= none
10
100
1K
10K
100K
1M
10M
10
100
1K
10K
100K
1M
10M
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 26. PSRR for Different Output Capacitor,
OUT = 3.3 V
Figure 27. PSRR for Different Output VIN,
V
V
OUT = 3.3 V
V
EN
V
EN
I
I
INPUT
INPUT
V
= 2.3 V
= 1.8 V
V
V
= 2.3 V
IN
IN
V
OUT
= 1.8 V
OUT
C
C
= 1 mF (MLCC)
= 1 mF (MLCC)
C
C
= 1 mF (MLCC)
= 1 mF (MLCC)
V
OUT
V
OUT
IN
IN
OUT
OUT
200 ms/div
100 ms/div
Figure 28. Enable Turn−on Response −
OUT = None, IOUT = 10 mA
Figure 29. Enable Turn−on Response −
C
COUT = None, IOUT = 150 mA
V
EN
V
EN
I
I
INPUT
INPUT
V
V
= 2.3 V
V
V
= 2.3 V
IN
IN
= 1.8 V
= 1.8 V
OUT
OUT
V
OUT
V
OUT
C
C
= 1 mF (MLCC)
C
C
= 1 mF (MLCC)
IN
IN
= 1 mF (MLCC)
= 1 mF (MLCC)
OUT
OUT
200 ms/div
200 ms/div
Figure 30. Enable Turn−on Response −
Figure 31. Enable Turn−on Response −
COUT = 470 nF, IOUT = 10 mA
COUT = 470 nF, IOUT = 150 mA
www.onsemi.com
8
NCP140
TYPICAL CHARACTERISTICS
3.3 V
3.3 V
2.3 V
V
IN
2.3 V
V
IN
V
OUT
V
OUT
V
C
= 1.8 V, I
= 10 mA
= 470 nF (MLCC)
V
C
= 1.8 V, I
= 10 mA
= none
OUT
OUT
OUT
OUT
= none, C
= none, C
IN
OUT
IN
OUT
20 ms/div
20 ms/div
Figure 32. Line Transient Response −
OUT = None
Figure 33. Line Transient Response −
C
COUT = 470 nF
I
OUT
t
= 1 ms
FALL
t
= 1 ms
RISE
I
OUT
V
OUT
V
OUT
V
V
C
C
= 3.8 V
V
V
C
C
= 3.8 V
IN
IN
= 3.3 V
= none
= 3.3 V
= none
OUT
OUT
IN
IN
= none
= none
OUT
OUT
5 ms/div
5 ms/div
Figure 34. Load Transient Response −
1 mA to 150 mA − COUT = None
Figure 35. Load Transient Response −
150 mA to 1 mA − COUT = None
I
OUT
t
= 1 ms
FALL
t
= 1 ms
RISE
I
OUT
V
OUT
V
OUT
V
C
C
= 3.8 V, V
= 1 mF (MLCC)
= 3.3 V
IN
OUT
V
C
C
= 3.8 V, V
= 1 mF (MLCC)
= 3.3 V
IN
OUT
IN
IN
= 1 mF (MLCC)
OUT
= 1 mF (MLCC)
OUT
5 ms/div
50 ms/div
Figure 36. Load Transient Response −
1 mA to 150 mA − COUT = 1 mF
Figure 37. Load Transient Response −
150 mA to 1 mA − COUT = 1 mF
www.onsemi.com
9
NCP140
TYPICAL CHARACTERISTICS
I
OUT
t
= 2 ms
FALL
t
= 2 ms
I
RISE
OUT
V
OUT
V
OUT
V
C
= 3.8 V, V
= none, C
= 1.8 V
= none
V
C
= 3.8 V, V
OUT
= none, C
IN OUT
= 1.8 V
= none
IN
OUT
IN
IN
OUT
5 ms/div
5 ms/div
Figure 38. Load Transient Response −
1 mA to 150 mA − tRISE = 2 ms
Figure 39. Load Transient Response −
150 mA to 1 mA − tFALL = 2 ms
TSD cycling
V
V
= 3.8 V
V
OUT
IN
V
EN
= 3.3 V
OUT
C
= 1 mF (MLCC)
IN
Overheating
Thermal
Shutdown
V
OUT
C
= 1 mF
OUT
I
OUT
C
= 470 nF
OUT
V
V
C
C
= 5.5 V
IN
= 1.8 V
= none
OUT
IN
= none
OUT
C
= none
OUT
10 ms/div
100 ms/div
Figure 40. Over Temperature Protection − TSD
Figure 41. Enable Turn−Off
V
IN
V
OUT
V
V
C
C
= 4.3 V
IN
= 3.3 V
= none
OUT
IN
= none
OUT
20 ms/div
Figure 42. Slow VIN Ramp
www.onsemi.com
10
NCP140
APPLICATIONS INFORMATION
General
Output Current Limit
The NCP140 is high performance low dropout regulator
Output Current is internally limited within the IC to a
typical 230 mA. The NCP140 will source this amount of
current measured with a voltage drops on the 90% of the
capable of supplying 150 mA and providing very stable
output voltage with or without capacitors. The device is
designed to remain stable with any type of capacitor or even
without input and output capacitor. The NCP140 also offers
low quiescent current and very small packages suitable for
space constrains application. In connection with no
capacitor requirements the regulator is very useful in
wearable application, smartphones and everywhere where is
high power density required.
nominal V
. If the Output Voltage is directly shorted to
= 0 V), the short circuit protection will limit
OUT
ground (V
OUT
the output current to approximately 250 mA. The current
limit and short circuit protection will work properly over
whole temperature range and also input voltage range. There
is no limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
Input and Output Capacitor Selection
In spite of the NCP140 is designed as capless device
capacitors can be added to improve dynamic behavior such
as fast load transient or PSRR. Recommendation for
selection input and output capacitor is very similar as for
high performance LDO. Low ESR ceramic capacitor is the
most beneficial for improvement load transient and PSRR
but suitable is almost any type of capacitor. The NCP140
remains stable with electrolytic and tantalum capacitor too.
threshold (T − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
SD
Thermal Shutdown Reset threshold (T
− 140°C typical).
SDU
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Enable Operation
The NCP140 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active (only A option) so that
Power Dissipation
As power dissipated in the NCP140 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
the output voltage V
is pulled to GND through a 100 W
OUT
resistor. In the disable state the device consumes as low as
typ. 10 nA from the V .
The maximum power dissipation the NCP140 can handle
is given by:
IN
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCP140 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 100 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
ƪ
ƫ
85° C * TA
PD(MAX)
+
(eq. 1)
qJA
The power dissipated by the NCP140 for given
application conditions can be calculated from the following
equation:
ǒ
Ǔ
ǒV
Ǔ
D [ VIN IGND@IOUT ) IOUT IN * VOUT
(eq. 2)
P
www.onsemi.com
11
NCP140
350
300
250
200
0.70
0.65
0.60
0.55
0.50
0.45
q
q
, 1 oz Cu
, 2 oz Cu
JA
JA
P
P
, T = 25°C, 2 oz Cu
D(MAX) A
150
100
, T = 25°C, 1 oz Cu
D(MAX)
A
50
0
0.40
0.35
0
100
200
300
400
500
600
700
2
PCB COPPER AREA (mm )
Figure 43. qJA and PD (MAX) vs. Copper Area (XDFN4− 0.8 x 0.8 mm)
350
300
250
200
150
100
0.60
0.55
0.50
0.45
0.40
0.35
q
q
, 1 oz Cu
, 2 oz Cu
JA
JA
P
P
, T = 25°C, 2 oz Cu
D(MAX) A
, T = 25°C, 1 oz Cu
D(MAX)
A
50
0
0.30
0.25
0
100
200
300
400
500
600
700
2
PCB COPPER AREA (mm )
Figure 44. qJA and PD (MAX) vs. Copper Area (XDFN4− 1 x 1 mm)
Reverse Current
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that V > V .
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
nominal value. This time is dependent on various
application conditions such as V , C , T .
OUT(NOM) OUT
A
OUT
IN
PCB Layout Recommendations
Larger copper area connected to the pins will improve the
device thermal resistance and improve maximum power
dissipation. The actual power dissipation can be calculated
from the equation above (Equation 2). Expose pad should be
tied the shortest path to the GND pin.
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which V
will reach 98% of its
OUT
www.onsemi.com
12
NCP140
ORDERING INFORMATION
Nominal
Output
Voltage
†
Device
Description
Marking
GA
Package
Shipping
NCP140AMXC180TCG
NCP140AMXC280TCG
NCP140AMXC300TCG
NCP140AMXC330TCG
NCP140BMXC330TCG
NCP140AMXD180TCG
NCP140AMXD280TCG
NCP140AMXD300TCG
NCP140AMXD330TCG
NCP140BMXD330TCG
1.8 V
2.8 V
3.0 V
3.3 V
3.3 V
1.8 V
2.8 V
3.0 V
3.3 V
3.3 V
GC
XDFN4
(Pb−Free)
CASE 711BF
Active Output Discharge
GE
3000 / Tape & Reel
GD
Without Active Output Discharge
G2
GA
GC
XDFN4
(Pb−Free)
CASE 711AJ
Active Output Discharge
GE
3000 / Tape & Reel
GD
Without Active Output Discharge
G2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
13
NCP140
PACKAGE DIMENSIONS
XDFN4 0.8x0.8, 0.48P
CASE 711BF
ISSUE O
NOTES:
EXPOSED Cu
MOLD CMPD
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINALS.
PIN ONE
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
REFERENCE
DETAIL B
E
ALTERNATE
2X
0.05
C
CONSTRUCTION
MILLIMETERS
DIM MIN
0.33
A1 0.00
MAX
0.43
0.05
A
L2
0.05
C
L2
2X
A3
b
D
D2 0.20
E
E2 0.20
e
L
0.127 REF
TOP VIEW
0.17
0.80 BSC
0.27
0.30
0.30
L2
L2
DETAIL B
A
0.05
C
(A3)
A1
0.80 BSC
L1
DETAIL A
DETAIL A
0.48 BSC
ALTERNATE
0.17
−−−
0.27
0.10
CONSTRUCTION
0.05
C
L1
L2
SEATING
PLANE
NOTE 4
0.06 REF
C
SIDE VIEW
0.32
4X
0.12
e
RECOMMENDED
MOUNTING FOOTPRINT*
e/2
4X
0.19
4X
0.36
4X 0.29
E2
455D2
1
2
3
DETAIL C
DETAIL A
0.32
1.00
4
4X b
4X L
M
0.10
C A
B
DETAIL C
M
0.05
C
NOTE 3
0.48
PITCH
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCP140
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE A
4X L2
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
E
4X b2
2X
0.05
C
MILLIMETERS
DETAIL A
DIM MIN
0.33
A1 0.00
MAX
0.43
0.05
0.05
C
2X
A
TOP VIEW
A3
b
b2 0.02
0.10 REF
0.15
0.25
0.12
(A3)
0.05
0.05
C
D
1.00 BSC
D2 0.43
0.53
A
E
e
L
1.00 BSC
0.65 BSC
0.20
C
0.30
0.17
SEATING
PLANE
NOTE 4
A1
L2 0.07
C
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
e
e/2
DETAIL A
4X L
D2
02.5X2
0.65
1
4
2
PITCH
PACKAGE
OUTLINE
4X
0.39
D2
4X
0.11
455
1.20
3
4X b
M
0.05
C A B
4X
4X
0.26
0.24
NOTE 3
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
NCP140/D
相关型号:
©2020 ICPDF网 联系我们和版权申明