NCP163AMX330TBG [ONSEMI]
250 mA, Ultra-Low Noise and High PSRR LDO Regulator;
| 型号： | NCP163AMX330TBG |
| 厂家： | 
ONSEMI |
| 描述： | 250 mA, Ultra-Low Noise and High PSRR LDO Regulator 输出元件 调节器 |
| 文件： | 总13页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCP163
250 mA, Ultra-Low Noise
and High PSRR LDO
Regulator for RF and
Analog Circuits
www.onsemi.com
The NCP163 is a next generation of high PSRR, ultra−low noise
LDO capable of supplying 250 mA output current. Designed to meet
the requirements of RF and sensitive analog circuits, the NCP163
device provides ultra−low noise, high PSRR and low quiescent
current. The device also offer excelent load/line transients. The
NCP163 is designed to work with a 1 uF input and a 1 mF output
ceramic capacitor. It is available in two thickness ultra−small 0.35P,
0.65 mm x 0.65 mm Chip Scale Package (CSP) and XDFN4 0.65P,
1 mm x 1 mm.
MARKING
DIAGRAMS
X
A1
A1
WLCSP4
CASE 567JZ
Features
X
• Operating Input Voltage Range: 2.2 V to 5.5 V
• Available in Fixed Voltage Option: 1.2 V to 5.3 V
WLCSP4
CASE 567KA
•
2% Accuracy Over Load/Temperature
• Ultra Low Quiescent Current Typ. 12 mA
• Standby Current: Typ. 0.1 mA
1
XX M
XDFN4
CASE 711AJ
1
• Very Low Dropout: 80 mV at 250 mA
• Ultra High PSRR: Typ. 92 dB at 20 mA, f = 1 kHz
X or XX = Specific Device Code
• Ultra Low Noise: 6.5 mV
RMS
M
= Date Code
• Stable with a 1 mF Small Case Size Ceramic Capacitors
• Available in −WLCSP4 0.65 mm x 0.65 mm x 0.33 mm
−WLCSP4 0.65 mm x 0.65 mm x 0.4 mm
−XDFN4 1 mm x 1 mm x 0.4 mm
PIN CONNECTIONS
IN
OUT
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A2
A1
Compliant
Typical Applications
B1
B2
• Battery−powered Equipment
• Wireless LAN Devices
EN
GND
• Smartphones, Tablets
(Top View)
• Cameras, DVRs, STB and Camcorders
V
V
OUT
IN
IN
OUT
NCP163
GND
C
1 mF
Ceramic
EN
IN
C
OUT
1 mF
Ceramic
ON
OFF
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 11 of this data sheet.
Figure 1. Typical Application Schematics
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. 0
NCP163/D
NCP163
IN
ENABLE
LOGIC
THERMAL
EN
SHUTDOWN
BANDGAP
MOSFET
REFERENCE
INTEGRATED
SOFT−START
DRIVER WITH
CURRENT LIMIT
OUT
* ACTIVE DISCHARGE
Version A only
EN
GND
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
WLCSP4
Pin No.
XDFN4
Pin
Name
Description
A1
A2
B1
B2
−
4
IN
Input voltage supply pin
1
3
OUT
EN
Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.
Chip enable: Applying V < 0.4 V disables the regulator, Pulling V > 1.2 V enables the LDO.
EN
EN
2
GND
EPAD
Common ground connection
EPAD
Expose pad can be tied to ground plane for better power dissipation
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input Voltage (Note 1)
V
IN
−0.3 V to 6
Output Voltage
V
OUT
−0.3 to V + 0.3, max. 6 V
V
IN
Chip Enable Input
V
CE
−0.3 to V + 0.3, max. 6 V
V
IN
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
t
unlimited
150
s
SC
T
°C
°C
V
J
T
STG
−55 to 150
2000
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESD Capability, Charged Device Model (Note 2)
ESD
HBM
ESD
200
V
MM
ESD
1000
V
CDM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
108
Unit
Thermal Characteristics, WLCSP4 (Note 3), Thermal Resistance, Junction−to−Air
Thermal Characteristics, XDFN4 (Note 3), Thermal Resistance, Junction−to−Air
R
°C/W
q
JA
198.1
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
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2
NCP163
ELECTRICAL CHARACTERISTICS −40°C ≤ T ≤ 125°C; V = V
+ 1 V; I
= 1 mA, C = C
= 1 mF, unless otherwise
J
IN
OUT(NOM)
OUT
IN
OUT
noted. V = 1.2 V. Typical values are at T = +25°C (Note 4).
EN
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
Output Voltage Accuracy
V
2.2
5.5
V
IN
V
V
= (V
0 mA ≤ I
+ 1 V) to 5.5 V
≤ 250 mA
IN
OUT(NOM)
V
−2
−3
+2
+3
%
%
OUT
OUT
OUT
= (V
+ 1 V) to 5.5 V
IN
OUT(NOM)
0 mA ≤ I
OUT
≤ 250 mA
V
OUT
(for V
V
< 1.8 V, XDFN4 package)
Line Regulation
+ 1 V ≤ V ≤ 5.5 V
Line
Reg
0.02
0.001
80
%/V
%/mA
mV
OUT(NOM)
IN
Load Regulation
I
= 1 mA to 250 mA
Load
Reg
OUT
Dropout Voltage (Note 5)
Output Current Limit
Short Circuit Current
Quiescent Current
Shutdown Current
I
= 250 mA
V
= 3.3 V
V
DO
145
OUT
OUT(NOM)
V
OUT
= 90% V
I
250
1.2
700
690
12
OUT(NOM)
CL
SC
mA
V
OUT
= 0 V
I
I
= 0 mA
I
Q
20
1
mA
mA
OUT
V
EN
≤ 0.4 V, V = 4.8 V
I
0.01
IN
DIS
EN Pin Threshold Voltage
EN Input Voltage “H”
EN Input Voltage “L”
V
ENH
V
V
ENL
0.4
0.5
EN Pull Down Current
Turn−On Time
V
EN
= 4.8 V
I
0.2
mA
ms
EN
C
= 1 mF, From assertion of V to
EN
OUT
120
V
OUT
= 95% V
OUT(NOM)
Power Supply Rejection Ratio
I
= 20 mA
f = 100 Hz
91
92
85
60
OUT
f = 1 kHz
f = 10 kHz
f = 100 kHz
PSRR
dB
Output Voltage Noise
f = 10 Hz to 100 kHz
I
= 1 mA
= 250 mA
8.0
6.5
OUT
V
N
mV
RMS
I
OUT
Thermal Shutdown Threshold
Temperature rising
Temperature falling
T
160
140
280
°C
°C
W
SDH
T
SDL
Active Output Discharge Resistance
Line Transient (Note 6)
V
< 0.4 V, Version A only
R
DIS
EN
V
IN
= (V
+ 1 V) to (V
+
OUT(NOM)
OUT(NOM)
−1
1.6 V) in 30 ms, I
= 1 mA
OUT
Tran
mV
mV
LINE
V
IN
= (V
+ 1.6 V) to (V
+
OUT(NOM)
OUT(NOM)
+1
1 V) in 30 ms, I
= 1 mA
OUT
Load Transient (Note 6)
−40
I
= 1 mA to 200 mA in 10 ms
= 200 mA to 1mA in 10 ms
OUT
Tran
LOAD
I
+40
OUT
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
6. Guaranteed by design.
falls 100 mV below V
.
OUT
OUT(NOM)
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NCP163
TYPICAL CHARACTERISTICS
1.830
1.825
1.820
1.815
1.810
3.330
3.325
3.320
I = 10 mA
OUT
I
= 10 mA
OUT
3.315
3.310
3.305
3.295
3.290
3.285
3.280
1.805
1.800
1.795
1.790
I
= 250 mA
OUT
I
= 250 mA
OUT
V
V
C
C
= 2.8 V
V
V
C
C
= 4.3 V
IN
IN
= 1.8 V
= 1 mF
= 3.3 V
= 1 mF
OUT
OUT
IN
IN
1.785
1.780
= 1 mF
= 1 mF
OUT
OUT
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Output Voltage vs. Temperature −
OUT = 1.8 V − XDFN Package
Figure 4. Output Voltage vs. Temperature −
OUT = 3.3 V − XDFN Package
V
V
5.040
5.035
5.030
5.025
5.020
5.015
5.010
5.005
5.000
0.050
0.040
0.030
0.020
I
= 10 mA
OUT
0.010
0.000
I
= 250 mA
OUT
−0.010
−0.020
−0.030
−0.040
−0.050
V
V
C
C
= 2.8 V
IN
V
V
C
C
= 5.5 V
IN
= 1.8 V
OUT
= 5.0 V
= 1 mF
OUT
= 1 mF
IN
IN
4.995
4.990
= 1 mF
OUT
= 1 mF
OUT
−40 −20
0
20
40
60
80
100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Output Voltage vs. Temperature −
OUT = 5.0 V − XDFN Package
Figure 6. Line Regulation vs. Temperature −
OUT = 1.8 V
V
V
0.050
0.040
20
18
16
14
12
10
8
V
V
C
C
= 2.8 V
IN
= 1.8 V
= 1 mF
OUT
0.030
IN
0.020
= 1 mF
OUT
0.010
0.000
−0.010
−0.020
−0.030
−0.040
−0.050
6
V
V
C
C
= 4.3 V
IN
4
= 3.3 V
= 1 mF
OUT
IN
2
= 1 mF
OUT
0
−40 −20
0
20
40
60
80
100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Line Regulation vs. Temperature −
OUT = 3.3 V
Figure 8. Load Regulation vs. Temperature −
VOUT = 1.8 V
V
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NCP163
TYPICAL CHARACTERISTICS
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
V
C
C
= 4.3 V
IN
= 3.3 V
= 1 mF
OUT
IN
= 1 mF
OUT
6
6
V
V
C
C
= 5.5 V
IN
= 5.0 V
= 1 mF
OUT
4
4
IN
2
2
= 1 mF
OUT
0
0
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Load Regulation vs. Temperature −
Figure 10. Load Regulation vs. Temperature −
VOUT = 5.0 V
V
OUT = 3.3 V
1500
1350
1200
1050
900
750
600
450
300
150
0
1500
1350
1200
1050
900
750
600
450
300
150
0
T = 125°C
T = 125°C
J
J
T = 25°C
J
T = 25°C
J
T = −40°C
J
T = −40°C
J
V
V
C
C
= 2.8 V
V
V
C
C
= 4.3 V
IN
IN
= 1.8 V
= 1 mF
= 3.3 V
= 1 mF
OUT
OUT
IN
IN
= 1 mF
= 1 mF
OUT
OUT
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
I
I
OUT
OUT
Figure 11. Ground Current vs. Load Current −
Figure 12. Ground Current vs. Load Current −
V
OUT = 1.8 V
V
OUT = 3.3 V
1500
250
225
200
175
150
125
100
75
V
C
C
= 1.8 V
= 1 mF
= 1 mF
OUT
1350
1200
1050
900
IN
T = 125°C
J
OUT
T = 125°C
J
T = 25°C
J
T = 25°C
J
750
T = −40°C
J
T = −40°C
J
600
450
V
V
C
C
= 5.5 V
IN
300
= 5.5 V
= 1 mF
50
OUT
IN
150
25
= 1 mF
OUT
0
0
0
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
I
I
OUT
OUT
Figure 13. Ground Current vs. Load Current −
OUT = 5.0 V
Figure 14. Dropout Voltage vs. Load Current −
VOUT = 1.8 V
V
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NCP163
TYPICAL CHARACTERISTICS
150
135
120
105
90
150
135
120
T = 125°C
J
105
90
T = 25°C
J
T = 125°C
J
75
75
T = 25°C
J
60
60
T = −40°C
J
45
45
T = −40°C
J
V
C
C
= 3.3 V
= 1 mF
= 1 mF
V
OUT
= 5.0 V
OUT
30
30
C
C
= 1 mF
IN
IN
15
0
15
0
= 1 mF
OUT
OUT
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
0
25 50 75 100 125 150 175 200 225 250
, OUTPUT CURRENT (mA)
I
I
OUT
OUT
Figure 15. Dropout Voltage vs. Load Current −
OUT = 3.3 V
Figure 16. Dropout Voltage vs. Load Current −
VOUT = 5.0 V
V
1000
100
10
1 mA
10 mA
250 mA
RMS Output Noise (mV)
10 Hz − 100 kHz 100 Hz − 100 kHz
I
OUT
1 mA
10 mA
250 mA
7.73
7.12
7.11
6.99
6.26
6.33
V
V
C
C
= 2.8 V
IN
= 1.8 V
= 1 mF
OUT
IN
= 1 mF
OUT
1
10
100
1000
10k
100k
1M
FREQUENCY (Hz)
Figure 17. Output Voltage Noise Spectral Density – VOUT = 1.8 V
1000
1 mA
10 mA
250 mA
RMS Output Noise (mV)
10 Hz − 100 kHz 100 Hz − 100 kHz
I
OUT
100
10
1
1 mA
10 mA
250 mA
7.9
7.07
6.25
6.38
7.19
7.29
V
= 3.8 V
= 2.8 V
= 1 mF
IN
V
OUT
C
C
IN
= 1 mF
OUT
10
100
1000
10k
100k
1M
FREQUENCY (Hz)
Figure 18. Output Voltage Noise Spectral Density – VOUT = 2.8 V
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NCP163
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
120
V
V
C
= 4.3 V+100mV
= 3.3 V
V
V
C
= 2.8 V+100mV
pp
IN
pp
IN
= 1.8 V
OUT
OUT
100
80
60
40
20
0
= 1 mF MLCC 1206
= 1 mF MLCC 1206
OUT
OUT
1 mA
1 mA
10 mA
20 mA
100 mA
250 mA
10 mA
20 mA
100 mA
250 mA
10
100
1000
10k
100k
1M
10M
10
100
1000
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 19. Power Supply Rejection −
Figure 20. Power Supply Rejection−
VOUT = 3.3 V
V
OUT = 1.8 V
120
100
80
60
40
20
1 mA
10 mA
20 mA
100 mA
250 mA
V
V
C
= 5.5 V+100mV
pp
IN
= 5.0 V
OUT
= 1 mF MLCC 1206
OUT
0
10
100
1000
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 21. Power Supply Rejection −
OUT = 5.0 V
V
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NCP163
APPLICATIONS INFORMATION
General
transient response or high frequency PSRR. It is not
The NCP163 is an ultra−low noise 250 mA low dropout
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
regulator designed to meet the requirements of RF
applications and high performance analog circuits. The
NCP163 device provides very high PSRR and excellent
dynamic response. In connection with low quiescent current
this device is well suitable for battery powered application
such as cell phones, tablets and other. The NCP163 is fully
protected in case of current overload, output short circuit and
overheating.
Enable Operation
The NCP163 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active so that the output voltage
Input Capacitor Selection (CIN)
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramiccapacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
V
OUT
is pulled to GND through a 280 Ω resistor. In the
disable state the device consumes as low as typ. 10 nA from
the V .
IN
If the EN pin voltage >1.2 V the device is guaranteed to
be enabled. The NCP163 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 200 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Output Decoupling (COUT
)
Output Current Limit
The NCP163 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP163 is designed to
remain stable with minimum effective capacitance of 0.7 mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer Figure 22.
Output Current is internally limited within the IC to a
typical 700 mA. The NCP163 will source this amount of
current measured with a voltage drops on the 90% of the
nominal V
. If the Output Voltage is directly shorted to
= 0 V), the short circuit protection will limit
OUT
ground (V
OUT
the output current to 690 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (T − 160°C typical), Thermal Shutdown event
SD
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (T
− 140°C typical).
SDU
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Power Dissipation
As power dissipated in the NCP163 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
Figure 22. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the C
but the
OUT
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
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NCP163
The maximum power dissipation the NCP163 can handle
The power dissipated by the NCP163 for given
application conditions can be calculated from the following
equations:
is given by:
o
ƪ
ƫ
125 C * TA
PD(MAX)
+
(eq. 1)
ǒ
Ǔ
(eq. 2)
PD [ VIN @ IGND ) IOUT VIN * VOUT
qJA
160
150
140
130
120
110
100
90
1.6
P
P
, T = 25°C, 2 oz Cu
D(MAX)
A
1.4
, T = 25°C, 1 oz Cu
1.2
1.0
0.8
0.6
0.4
D(MAX)
A
q
, 1 oz Cu
JA
JA
q
, 2 oz Cu
500
0.2
0
80
0
100
200
300
400
600
700
2
PCB COPPER AREA (mm )
Figure 23. qJA and PD (MAX) vs. Copper Area (CSP4)
220
210
200
190
180
170
160
1.0
0.9
q
, 2 oz Cu
JA
0.8
0.7
0.6
0.5
q
, 1 oz Cu
JA
P
P
, T = 25°C, 2 oz Cu
D(MAX)
A
, T = 25°C, 1 oz Cu
D(MAX)
A
0.4
0.3
150
0
100
200
300
400
500
600
700
2
PCB COPPER AREA (mm )
Figure 24. qJA and PD (MAX) vs. Copper Area (XDFN4)
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NCP163
Reverse Current
Turn−On Time
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that V > V .
The turn−on time is defined as the time period from EN
assertion to the point in which V will reach 98% of its
OUT
IN
OUT
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
nominal value. This time is dependent on various
application conditions such as V , C , T .
OUT(NOM) OUT
A
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place C and C capacitors close to the
Power Supply Rejection Ratio
The NCP163 features very high Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of C
capacitor and proper PCB layout.
IN
OUT
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 or 0201 capacitors with
appropriate capacity. Larger copper area connected to the
pins will also improve the device thermal resistance. The
actual power dissipation can be calculated from the equation
above (Equation 2). Expose pad can be tied to the GND pin
for improvement power dissipation and lower device
temperature.
OUT
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10
NCP163
ORDERING INFORMATION (WLCSP4)
Voltage
†
Option
Device
Marking
Rotation
Description
Package
Shipping
NCP163AFCS180T2G
NCP163AFCS260T2G
NCP163AFCS280T2G
NCP163AFCS285T2G
NCP163AFCS290T2G
NCP163AFCS2925T2G
NCP163BFCS180T2G
NCP163BFCS2925T2G
1.8 V
Y
4
3
5
6
2
Y
2
180
180
180
180
180
180
270
270
2.6 V
2.8 V
250 mA, Active Discharge
WLCSP4
CASE 567KA
(Pb-Free)
5000 /
Tape &
Reel
2.85 V
2.9 V
2.925 V
1.8 V
250 mA, Non−Active Discharge
2.925 V
NCP163AFCT180T2G
NCP163AFCT260T2G
NCP163AFCT280T2G
NCP163AFCT285T2G
NCP163AFCT290T2G
NCP163AFCT2925T2G
NCP163AFCT300T2G
NCP163BFCT180T2G
NCP163BFCT2925T2G
1.8 V
2.6 V
Y
6
3
5
4
2
3
Y
2
180
270
180
270
270
180
270
270
270
2.8 V
2.85 V
2.9 V
250 mA, Active Discharge
WLCSP4
CASE 567JZ
(Pb-Free)
5000 /
Tape &
Reel
2.925 V
3.0 V
1.8 V
250 mA, Non−Active Discharge
2.925 V
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ORDERING INFORMATION (XDFN4)
Voltage
Option
†
Device
Marking
ME
MG
MA
MC
MH
MN
MD
MM
MQ
MR
MJ
Description
Package
Shipping
NCP163AMX120TBG*
NCP163AMX130TBG*
NCP163AMX180TBG
NCP163AMX1825TBG
NCP163AMX190TBG
NCP163AMX260TBG
NCP163AMX275TBG
NCP163AMX280TBG
NCP163AMX285TBG
NCP163AMX290TBG
NCP163AMX300TBG
NCP163AMX330TBG
NCP163AMX500TBG
NCP163BMX180TBG
NCP163BMX1825TBG
NCP163BMX275TBG
1.2 V
1.3 V
1.8 V
1.825 V
1.9 V
2.6 V
2.75 V
2.8 V
250 mA, Active Discharge
XDFN4
CASE 711AJ
(Pb-Free)
3000 /
Tape &
Reel
2.85 V
2.9 V
3.0 V
3.3 V
MK
ML
5.0 V
1.8 V
PA
1.825 V
2.75 V
PC
250 mA, Non−Active Discharge
PD
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact sales office for availability information.
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11
NCP163
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64
CASE 567JZ
ISSUE A
NOTES:
A
E
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
PIN A1
REFERENCE
MILLIMETERS
DIM
A
A1
A2
b
MIN
−−−
0.04
NOM
−−−
0.06
0.23 REF
0.210
0.640
MAX
0.33
0.08
TOP VIEW
0.195
0.610
0.610
0.225
0.670
0.670
A2
D
E
0.640
0.05
C
e
0.35 BSC
A
0.05
C
RECOMMENDED
A1
SEATING
PLANE
SOLDERING FOOTPRINT*
NOTE 3
C
SIDE VIEW
PACKAGE
A1
OUTLINE
e
4X
b
4X0.20
e
0.35
PITCH
0.03
C A B
B
0.35
PITCH
A
DIMENSIONS: MILLIMETERS
1
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
WLCSP4, 0.64x0.64
CASE 567KA
ISSUE A
NOTES:
A
E
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN A1
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
D
MILLIMETERS
DIM
A
A1
A2
b
MIN
0.35
0.14
NOM
0.40
0.16
0.25 REF
0.200
0.640
MAX
0.45
0.18
TOP VIEW
0.185
0.610
0.610
0.215
0.670
0.670
A2
D
E
0.05
C
0.640
e
0.35 BSC
A
0.05
C
RECOMMENDED
A1
SEATING
PLANE
SOLDERING FOOTPRINT*
NOTE 3
C
SIDE VIEW
PACKAGE
A1
OUTLINE
e
4X
b
4X0.20
e
0.35
PITCH
0.05
0.03
C
C
A B
B
0.35
PITCH
A
DIMENSIONS: MILLIMETERS
1
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
www.onsemi.com
12
NCP163
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE A
4X L2
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
E
4X b2
2X
0.05
C
MILLIMETERS
DETAIL A
DIM MIN
0.33
A1 0.00
MAX
0.43
0.05
0.05
C
2X
A
TOP VIEW
A3
b
b2 0.02
0.10 REF
0.15
0.25
0.12
(A3)
0.05
0.05
C
D
1.00 BSC
D2 0.43
0.53
1.00 BSC
0.65 BSC
A
E
e
L
C
0.20
0.30
0.17
SEATING
PLANE
NOTE 4
A1
L2 0.07
C
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
e
e/2
DETAIL A
4X L
D2
2X
0.52
0.65
1
4
2
PITCH
PACKAGE
OUTLINE
4X
0.39
D2
4X
0.11
455
1.20
3
4X b
M
0.05
C A B
4X
4X
0.26
0.24
NOTE 3
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCP163/D
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