NCP170ASN250T2G [ONSEMI]
LDO 稳压器，150 mA，超低 Iq;
| 型号： | NCP170ASN250T2G |
| 厂家： | 
ONSEMI |
| 描述： | LDO 稳压器，150 mA，超低 Iq 稳压器 |
| 文件： | 总23页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCP170
Ultra‐Low IQ 150 mA
CMOS LDO Regulator
The NCP170 series of CMOS low dropout regulators are designed
specifically for portable battery-powered applications which require
ultra-low quiescent current. The ultra-low consumption of typ. 500 nA
ensures long battery life and dynamic transient boost feature improves
device transient response for wireless communication applications.
The device is available in small 1 × 1 mm XDFN4, SOT-563 and
TSOP-5 packages.
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6
5
1
1
1
Features
XDFN4
MX SUFFIX
CASE 711AJ
SOT−563
XV SUFFIX
CASE 463A
TSOP−5
SN SUFFIX
CASE 483
• Operating Input Voltage Range: 2.2 V to 5.5 V
• Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps)
• Ultra-Low Quiescent Current Typ. 0.5 mA
• Low Dropout: 170 mV Typ. at 150 mA
• High Output Voltage Accuracy 1%
• Stable with Ceramic Capacitors 1 mF
• Over-Current Protection
MARKING DIAGRAMS
XDFN4
XX M
1
• Thermal Shutdown Protection
XX = Specific Device Code
M
= Date Code
• NCP170A for Active Discharge Option
• Available in Small 1 × 1 mm XDFN4, SOT−563 and TSOP-5
SOT−563
Packages
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
XX MG
Compliant
1
Typical Applications
XX = Specific Device Code
M
G
= Month Code
= Pb-Free Package
• Battery Powered Equipments
• Portable Communication Equipments
• Cameras, Image Sensors and Camcorders
*Pb-Free indicator, “G” or microdot “G”,
may or may not be present.
TSOP−5
V
IN
V
OUT
5
IN
OUT
NCP170
GND
XXXAYWG
G
C
1 mF
EN
C
1 mF
IN
OUT
1
XXX = Specific Device Code
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Figure 1. Typical Application Schematic
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 19 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
October, 2017 − Rev. 14
NCP170/D
NCP170
PIN FUNCTION DESCRIPTION
Pin No.
XDFN4
Pin No.
SOT−563
Pin No.
TSOP−5
Pin Name
IN
Description
4
1
2
6
3
−
4
5
1
2
3
5
−
4
−
Power Supply Input Voltage
Power Supply Ground
Chip Enable Pin (Active “H”)
Output Pin
2
GND
EN
3
1
EPAD
−
OUT
EPAD
NC
Internally Connected to GND
No Connect
−
GND
Power Supply Ground
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
V
IN
Input Voltage (Note 1)
Output Voltage
6.0
V
OUT
−0.3 to V + 0.3
V
IN
V
Chip Enable Input
−0.3 to 6.0
150
V
CE
T
Maximum Junction Temperature
Storage Temperature
°C
°C
V
J(MAX)
T
STG
−55 to 150
2000
ESD
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
HBM
ESD
200
V
MM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114)
ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
R
Thermal Characteristics, Thermal Resistance, Junction-to-Air
XDFN4 1 × 1 mm
SOT−563
°C/W
q
JA
250
200
250
TSOP−5
Figure 2. Simplified Block Diagram
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2
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.2 V
(−40°C ≤ T ≤ 85°C; V = 2.5 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 3)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
1.188
1.176
−
Typ
−
Max
5.5
1.212
1.224
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
1.2
1.2
0.05
1
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
2.5 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
(Note 4)
(Note 5)
≤ 150 mA, V = 2.5 V
−20
−
Reg
OUT
IN
V
DO
Dropout Voltage
−
−
I
Output Current
150
−
−
−
OUT
I
Short Circuit Current Limit
Quiescent Current
Standby Current
V
OUT
= 0 V
225
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pin Current
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
−
0.4
−
V
ENL
EN
I
V
EN
≤ V ≤ 5.5 V (Note 6)
−
10
nA
dB
IN
PSRR
Power Supply Rejection Ratio
f = 1 kHz, V = 2.2 V + 200 mVpp Modulation
IN
I
I
= 150 mA
= 10 mA
−
−
57
63
−
−
OUT
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA,
OUT
−
−
−
−
85
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 6)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 6)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 6)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
4. Not Characterized at V = 2.2 V, V
= 1.2 V, I = 150 mA.
OUT
IN
OUT
5. Respect SOA.
6. Guaranteed by design and characterization.
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3
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.5 V
(−40°C ≤ T ≤ 85°C; V = 2.5 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 7)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
1.485
1.470
−
Typ
−
Max
5.5
1.515
1.530
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
1.5
1.5
0.05
−
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
4.3 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 4.3 V
−20
−
Reg
OUT
IN
V
DO
Dropout Voltage
I
= 150 mA (Note 8)
−
−
OUT
I
Output Current
(Note 9)
= 0 V
150
−
−
−
OUT
I
Short Circuit Current Limit
Quiescent Current
Standby Current
V
OUT
225
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pin Current
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
−
0.4
−
V
ENL
EN
I
V
EN
≤ V ≤ 5.5 V (Note 10)
−
10
nA
dB
IN
PSRR
Power Supply Rejection Ratio
f = 1 kHz, V = 2.5 V + 200 mVpp Modulation
IN
I
= 150 mA
−
−
57
90
−
−
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA,
OUT
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
IN
= 5.5 V, V = 0 V (Note 10)
−
−
−
100
175
25
−
−
−
LOW
EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 10)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 10)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
8. Not Characterized at V = 2.2 V, V
= 1.5 V, I = 150 mA.
OUT
IN
OUT
9. Respect SOA.
10.Guaranteed by design and characterization.
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4
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.8 V
(−40°C ≤ T ≤ 85°C; V = 2.8 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 11)
J
IN
OUT
IN
OUT
A
Symbol
Parameter
Test Conditions
Min
2.2
2.0
1.782
1.764
−
Typ
−
Max
5.5
5.5
1.818
1.836
0.20
20
Unit
V
IN
Operating Input Voltage
Output Voltage
V
I
< 30 mA
−
OUT
V
OUT
T = +25°C
A
1.8
1.8
0.05
1
V
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
2.8 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 2.8 V
−20
−
Reg
OUT
IN
V
DO
Dropout Voltage
I
= 150 mA (Note 12)
350
−
480
−
OUT
I
Output Current
(Note 13)
= 0 V
150
−
OUT
I
Short Circuit Current Limit
Quiescent Current
V
225
0.5
0.1
−
−
SC
OUT
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
Standby Current
V
= 0 V, T = 25°C
−
STB
EN
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
ENL
I
EN
−
0.4
−
V
V
≤ V ≤ 5.5 V (Note 14)
−
10
57
nA
dB
EN
IN
PSRR
f = 1 kHz, V = 2.8 V + 200 mVpp Modulation
−
−
IN
I
= 150 mA
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA
OUT
−
−
−
−
95
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 14)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 14)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 14)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
12.Characterized when V
falls 54 mV below the regulated voltage and only for devices with V
= 1.8 V.
OUT
OUT
13.Respect SOA.
14.Guaranteed by design and characterization.
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5
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.5 V
(−40°C ≤ T ≤ 85°C; V = 3.5 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 15)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
2.475
2.450
−
Typ
−
Max
5.5
2.525
2.550
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
2.5
2.5
0.05
1
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
3.5 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 3.5 V
−20
−
Reg
OUT
IN
V
DO
Dropout Voltage
I
= 150 mA (Note 16)
240
−
330
−
OUT
I
Output Current
(Note 17)
= 0 V
150
−
OUT
I
Short Circuit Current Limit
Quiescent Current
V
OUT
225
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
Standby Current
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
ENL
I
EN
−
0.4
−
V
V
EN
≤ V ≤ 5.5 V (Note 18)
−
10
57
nA
dB
IN
PSRR
f = 1 kHz, V = 3.5 V + 200 mVpp Modulation
−
−
IN
I
= 150 mA
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA
OUT
−
−
−
−
125
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 18)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 18)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 18)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
15.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
16.Characterized when V
17.Respect SOA.
falls 75 mV below the regulated voltage and only for devices with V
= 2.5 V.
OUT
OUT
18.Guaranteed by design and characterization.
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6
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.8 V
(−40°C ≤ T ≤ 85°C; V = 3.8 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 19)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
2.772
2.744
−
Typ
−
Max
5.5
2.828
2.856
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
2.8
2.8
0.05
1
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
3.8 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 3.8 V
−20
−
Reg
OUT
IN
V
DO
Dropout Voltage
I
= 150 mA (Note 20)
210
−
300
−
OUT
I
Output Current
(Note 21)
= 0 V
150
−
OUT
I
Short Circuit Current Limit
Quiescent Current
V
OUT
195
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
Standby Current
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
ENL
I
EN
−
0.4
−
V
V
EN
≤ V ≤ 5.5 V (Note 22)
−
10
40
nA
dB
IN
PSRR
f = 1 kHz, V = 3.8 V + 200 mVpp Modulation
−
−
IN
I
= 150 mA
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA
OUT
−
−
−
−
125
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 22)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 22)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 22)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
19.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
20.Characterized when V
21.Respect SOA.
falls 84 mV below the regulated voltage and only for devices with V
= 2.8 V.
OUT
OUT
22.Guaranteed by design and characterization.
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7
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.0 V
(−40°C ≤ T ≤ 85°C; V = 4.0 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 23)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
2.97
2.94
−
Typ
−
Max
5.5
3.03
3.06
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
3.0
3.0
0.05
1
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
4.0 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 4 V
−20
−
Reg
OUT
IN
VDO
Dropout Voltage
I
= 150 mA (Note 24)
190
−
260
−
OUT
I
Output Current
(Note 25)
= 0 V
150
−
OUT
I
Short Circuit Current Limit
Quiescent Current
V
OUT
195
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
Standby Current
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
ENL
I
EN
−
0.4
−
V
V
EN
≤ V ≤ 5.5 V (Note 26)
−
10
47
nA
dB
IN
PSRR
f = 1 kHz, V = 4.0 V + 200 mVpp Modulation
−
−
IN
I
= 150 mA
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA
OUT
−
−
−
−
120
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 26)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 26)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 26)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
23.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
24.Characterized when V
25.Respect SOA.
falls 90 mV below the regulated voltage and only for devices with V
= 3.0 V.
OUT
OUT
26.Guaranteed by design and characterization.
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8
NCP170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V
(−40°C ≤ T ≤ 85°C; V = 4.3 V; I
= 1 mA, C = C
= 1.0 mF, unless otherwise noted. Typical values are at T = +25°C.) (Note 27)
OUT A
J
IN
OUT
IN
Symbol
Parameter
Test Conditions
Min
2.2
3.267
3.234
−
Typ
−
Max
5.5
3.333
3.366
0.20
20
Unit
V
V
IN
Operating Input Voltage
Output Voltage
V
OUT
T = +25°C
3.3
3.3
0.05
1
V
A
−40°C ≤ T ≤ 85°C
J
Line
Line Regulation
4.3 V < V ≤ 5.5 V, I
= 1 mA
%/V
mV
mV
mA
mA
mA
mA
V
Reg
IN
OUT
Load
Load Regulation
0 mA < I
≤ 150 mA, V = 4.3 V
−20
−
Reg
OUT
IN
VDO
Dropout Voltage
I
= 150 mA (Note 28)
180
−
250
−
OUT
I
Output Current
(Note 29)
= 0 V
150
−
OUT
I
Short Circuit Current Limit
Quiescent Current
V
OUT
195
0.5
0.1
−
−
SC
I
Q
I
= 0 mA
−
0.9
0.5
−
OUT
I
Standby Current
V
EN
= 0 V, T = 25°C
−
STB
J
V
ENH
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
EN Input Voltage “H”
EN Input Voltage “L”
1.2
−
V
ENL
I
EN
−
0.4
−
V
V
EN
≤ V ≤ 5.5 V (Note 30)
−
10
41
nA
dB
IN
PSRR
f = 1 kHz, V = 4.3 V + 200 mVpp Modulation
−
−
IN
I
= 150 mA
OUT
V
Output Noise Voltage
V
= 5.5 V, I = 1 mA
OUT
−
−
−
−
125
100
175
25
−
−
−
−
mVrms
W
NOISE
IN
f = 100 Hz to 1 MHz, C
= 1 mF
OUT
R
Active Output Discharge
Resistance (A option only)
V
= 5.5 V, V = 0 V (Note 30)
LOW
IN EN
T
SD
Thermal Shutdown Temperature Temperature Increasing from T = +25°C
°C
J
(Note 30)
T
Thermal Shutdown Hysteresis
Temperature Falling from T (Note 30)
°C
SDH
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
27.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
28.Characterized when V
29.Respect SOA.
falls 99 mV below the regulated voltage and only for devices with V
= 3.3 V.
OUT
OUT
30.Guaranteed by design and characterization.
TYPICAL CHARACTERISTICS
1.202
1.200
1.198
1.802
Vin = 5.5 V
Vin = 3.5 V
Vin = 5.5 V
1.800
Vin = 3.0 V
1.798
Vin = 2.8 V
Vin = 2.2 V
1.196
1.796
1.794
1.194
NCP170xxx120TyG
Cin = Cout = 1 mF
Iout = 1 mA
NCP170xxx180TyG
Cin = Cout = 1 mF
Iout = 1 mA
1.792
1.790
1.192
1.190
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature,
Vout = 1.2 V
Figure 4. Output Voltage vs. Temperature,
Vout = 1.8 V
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9
NCP170
TYPICAL CHARACTERISTICS
3.008
3.004
3.000
2.996
2.992
3.604
Vin = 5.5 V
Vin = 5.5 V
3.600
3.596
Vin = 3.3 − 4.5 V
Vin = 3.8 − 4.5 V
Vin = 5.0 V
3.592
3.588
Vin = 5.0 V
NCP170xxx360TyG
Cin = Cout = 1 mF
Iout = 1 mA
NCP170xxx300TyG
Cin = Cout = 1 mF
Iout = 1 mA
2.988
2.984
3.584
3.580
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature,
Vout = 3.0 V
Figure 6. Output Voltage vs. Temperature,
Vout = 3.6 V
1.200
1.199
1.198
1.197
1.802
1.800
Vin = 2.5 V
Vin = 3.0 V
Vin = 2.8 V
Vin = 4.0 V
1.798
1.796
1.794
Vin = 4.0 V
Vin = 5.5 V
Vin = 4.5 V
1.196
NCP170xxx180TyG
Cin = Cout = 1 mF
T = 25°C
A
NCP170xxx120TyG
Cin = Cout = 1 mF
T = 25°C
A
Vin = 5.5 V
1.195
1.194
1.792
1.790
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 7. Output Voltage vs. Output Current,
Vout = 1.2 V
Figure 8. Output Voltage vs. Output Current,
Vout = 1.8 V
3.002
3.001
3.000
2.999
2.998
3.599
3.598
3.597
3.596
3.595
Vin = 4.0 V
Vin = 4.3 V
Vin = 4.5 V
Vin = 5.0 V
Vin = 4.6 V
Vin = 5.0 V
NCP170xxx300TyG
NCP170xxx360TyG
2.997
2.996
3.594
3.593
Cin = Cout = 1 mF
T = 25°C
A
Cin = Cout = 1 mF
T = 25°C
A
Vin = 5.5 V
120 140
Vin = 5.5 V
0
20
40
60
80
100
120
140
0
20
40
60
80
100
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 9. Output Voltage vs. Output Current,
Vout = 3.0 V
Figure 10. Output Voltage vs. Output Current,
Vout = 3.6 V
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10
NCP170
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
150
100
300
NCP170xxx180TyG
Cin = Cout = 1 mF
T = 85°C
NCP170xxx250TyG
Cin = Cout = 1 mF
A
T = 85°C
A
250
200
150
100
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
50
0
50
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 11. Dropout Voltage vs. Output Current,
Vout = 1.8 V
Figure 12. Dropout Voltage vs. Output Current,
Vout = 2.5 V
250
200
150
100
200
175
150
125
100
75
T = 85°C
A
NCP170xxx360TyG
Cin = Cout = 1 mF
NCP170xxx300TyG
Cin = Cout = 1 mF
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
50
50
0
25
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 13. Dropout Voltage vs. Output Current,
Vout = 3.0 V
Figure 14. Dropout Voltage vs. Output Current,
Vout = 3.6 V
0.65
0.60
0.55
0.50
0.45
0.65
0.60
0.55
0.50
0.45
NCP170xxx120TyG
Cin = Cout = 1 mF
Iout = 0
NCP170xxx250TyG
Cin = Cout = 1 mF
Iout = 0
Vout = 1.2 V
Vout = 2.5 V
Vin = 5.5 V
Vin = 5.5 V
Vin = 3.5 − 4.0 V
Vin = 2.5 − 4.0 V
Vin = 5.0 V
0.40
0.35
0.40
0.35
Vin = 5.0 V
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 15. Quiescent Current vs. Temperature,
Vout = 1.2 V
Figure 16. Quiescent Current vs. Temperature,
Vout = 2.5 V
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11
NCP170
TYPICAL CHARACTERISTICS
0.65
0.60
0.55
0.50
0.45
70
NCP170xxx360TyG
Cin = Cout = 1 mF
Iout = 0
Vin = 2.5 V
Vin = 3.5 V
NCP170xxx120TyG
Cin = Cout = 1 mF
60
50
40
30
20
T = 25°C
A
Vout = 3.6 V
Vout = 1.2 V
Vin = 5.5 V
Vin = 4.0 V
Vin = 5.5 V
Vin = 5.0 V
0.40
0.35
10
0
−40
−20
0
20
40
60
80
0.01
0.1
1
10
100
TEMPERATURE (°C)
OUTPUT CURRENT (mA)
Figure 17. Quiescent Current vs. Temperature,
Vout = 3.6 V
Figure 18. Ground Current vs. Output Current,
Vout = 1.2 V
80
70
60
50
40
30
20
80
70
NCP170xxx360TyG
Cin = Cout = 1 mF
NCP170xxx250TyG
Cin = Cout = 1 mF
Vin = 3.5 V
Vin = 4.6 V
T = 25°C
A
T = 25°C
A
60
50
40
30
20
Vout = 3.6 V
Vout = 2.5 V
Vin = 4.5 V
Vin = 5.0 V
Vin = 5.5 V
Vin = 5.5 V
10
0
10
0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 19. Ground Current vs. Output Current,
Vout = 2.5 V
Figure 20. Ground Current vs. Output Current,
Vout = 3.6 V
80
70
60
50
40
30
20
80
70
60
50
40
30
20
Iout = 1 mA
Iout = 1 mA
10 mA
10 mA
100 mA
100 mA
NCP170xxx180TyG
Cout = 1 mF
NCP170xxx120TyG
Cout = 1 mF
150 mA
150 mA
Vin = 2.8 V+ 200 mVpp modulation
Vin = 2.2 V+ 200 mVpp modulation
10
0
10 T = 25°C
T = 25°C
Vout = 1.2 V
A
A
Vout = 1.8 V
0
100
1k
10k
100k
1M
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 21. PSRR vs. Frequency, Vout = 1.2 V
Figure 22. PSRR vs. Frequency, Vout = 1.8 V
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12
NCP170
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
70
Iout = 1 mA
10 mA
Iout = 1 mA
60
10 mA
50
100 mA
100 mA
40
30
NCP170xxx300TyG
Cout = 1 mF
NCP170xxx360TyG
Cout = 1 mF
20
150 mA
150 mA
Vin = 4.0 V+ 200 mVpp modulation
Vin = 4.6 V+ 200 mVpp modulation
10
0
T = 25°C
10
0
A
T = 25°C
A
Vout = 3.0 V
Vout = 3.6 V
100
1k
10k
100k
1M
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 23. PSRR vs. Frequency, Vout = 3.0 V
Figure 24. PSRR vs. Frequency, Vout = 3.6 V
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
NCP170xxx120TyG
Cin = Cout = 1 mF
Vin = 5.5 V
Vout = 1.2 V
Iout = 1 mA
NCP170xxx180TyG
Cin = Cout = 1 mF
Vin = 5.5 V
Vout = 1.8 V
Iout = 1 mA
T = 25°C
A
T = 25°C
A
0.8
0.6
0.4
0.2
0
0.2
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 25. Output Voltage Noise Spectral
Density, Vout = 1.2 V
Figure 26. Output Voltage Noise Spectral
Density, Vout = 1.8 V
3.5
3.0
2.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
NCP170xxx300TyG
Cin = Cout = 1 mF
Vin = 5.5 V
Vout = 3.0 V
Iout = 1 mA
NCP170xxx360TyG
Cin = Cout = 1 mF
Vin = 5.5 V
Vout = 3.6 V
Iout = 1 mA
T = 25°C
A
T = 25°C
A
2.0
1.5
1.0
0.5
0
0.5
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 27. Output Voltage Noise Spectral
Density, Vout = 3.0 V
Figure 28. Output Voltage Noise Spectral
Density, Vout = 3.6 V
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13
NCP170
TYPICAL CHARACTERISTICS
Figure 29. Load Transient Response at Load
Figure 30. Load Transient Response at Load
Step from 0.1 mA to 50 mA, Vout = 1.2 V
Step from 1 mA to 50 mA, Vout = 1.2 V
Figure 31. Load Transient Response at Load
Step from 0.1 mA to 10 mA, Vout = 1.2 V
Figure 32. Load Transient Response at Load
Step from 1 mA to 50 mA, Vout = 2.5 V
Output Voltage
Output Current
Figure 33. Load Transient Response at Load
Step from 0.1 mA to 50 mA, Vout = 2.5 V
Figure 34. Load Transient Response at Load
Step from 0.1 mA to 10 mA, Vout = 2.5 V
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14
NCP170
TYPICAL CHARACTERISTICS
Figure 35. Load Transient Response at Load
Figure 36. Load Transient Response at Load
Step from 0.1 mA to 50 mA, Vout = 3.0 V
Step from 1mA to 50 mA, Vout= 3.0 V
Figure 37. Load Transient Response at Load
Step from 0.1 mA to 10 mA, Vout = 3.0 V
Figure 38. Load Transient Response at Load
Step from 1 mA to 50 mA, Vout = 3.6 V
Figure 39. Load Transient Response at Load
Step from 0.1 mA to 50 mA, Vout = 3.6 V
Figure 40. Load Transient Response at Load
Step from 0.1 mA to 10 mA, Vout = 3.6 V
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15
NCP170
TYPICAL CHARACTERISTICS
Figure 41. Output Voltage with and without
Active Discharge Feature, Vout = 1.2 V
Figure 42. Output Voltage with and without
Active Discharge Feature, Vout = 2.5 V
Figure 43. Output Voltage with and without
Active Discharge Feature, Vout = 3.0 V
Figure 44. Output Voltage with and without
Active Discharge Feature, Vout = 3.6 V
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16
NCP170
TYPICAL CHARACTERISTICS
Figure 45. Enable Turn−on Response at Vout =
Figure 46. Enable Turn−on Response at Vout =
1.8 V
1.2 V
Figure 47. Enable Turn−on Response at Vout =
2.5 V
Figure 48. Enable Turn−on Response at Vout =
3.6 V
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17
NCP170
APPLICATIONS INFORMATION
General
available at output pin. In case the Enable function is not
The NCP170 is a high performance 150 mA Linear
required the EN pin should be connected directly to input
pin.
Regulator with Ultra Low IQ. This device delivers low
Noise and high Power Supply Rejection Ratio with excellent
dynamic performance due to employing the Dynamic
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
point (TSD = 175°C typical) the device goes to disabled state
and the output voltage is not delivered until the die
temperature decreases to 150°C. The Thermal Shutdown
feature provides a protection from a catastrophic device
failure at accidental overheating. This protection is not
intended to be used as a substitute for proper heat sinking.
Quiescent Current adjustment which assure ultra low I
Q
consumption at no – load state. These parameters make this
device very suitable for various battery powered
applications.
Input Decoupling (CIN)
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor between IN and GND pins of the device.
This capacitor will provide a low impedance path for any
unwanted AC signals or Noise superimposed onto constant
Input Voltage. The good input capacitor will limit the
influence of input trace inductances and source resistance
during sudden load current changes.
Power Dissipation and Heat sinking
The maximum power dissipation supported by the device
is dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. For reliable operation, junction temperature
should be limited to +125°C. The maximum power
dissipation the NCP170 device can handle is given by:
Higher capacitance and lower ESR Capacitors will
improve the overall line transient response.
Output Decoupling (COUT
)
ƪT
ƫ
J(MAX) * TA
The NCP170 does not require a minimum Equivalent
Series Resistance (ESR) for the output capacitor. The device
is designed to be stable with standard ceramics capacitors
with values of 1.0 mF or greater up to 10 mF. The X5R and
X7R types have the lowest capacitance variations over
temperature thus they are recommended. There is
recommended connect the output capacitor as close as
possible to the output pin of the regulator.
(eq. 1)
PD(MAX)
+
RqJA
The power dissipated by the NCP170 device for given
application conditions can be calculated from the following
equations:
ǒ
Ǔ
ǒ
Ǔ
(eq. 2)
PD [ VIN IGND(IOUT) ) IOUT VIN * VOUT
or
Enable Operation
ǒ
Ǔ
PD(MAX) ) VOUT IOUT
(eq. 3)
The NCP170 uses the EN pin to enable /disable its device
and to activate /deactivate the active discharge function at
devices with this feature. If the EN pin voltage is pulled
below 0.4 V the device is guaranteed to be disable. The
active discharge transistor at the devices with Active
Discharge Feature is activated and the output voltage VOUT
is pulled to GND through an internal circuitry with effective
resistance about 100 ohms.
VIN(MAX)
[
IOUT ) IGND
Hints
VIN and GND printed circuit board traces should be as
wide as possible. When the impedance of these traces is
high, there is a chance to pick up noise or cause the regulator
to malfunction. Place external components, especially the
output capacitor, as close as possible to the NCP170, and
make traces as short as possible.
If the EN pin voltage is higher than 1.2 V the device is
guaranteed to be enabled. The internal active discharge
circuitry is switched off and the desired output voltage is
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18
NCP170
ORDERING INFORMATION
Nominal
Output Voltage
Active
Discharge
†
Device
Marking
AC
AP
AJ
Package
Shipping
NCP170AMX120TCG
NCP170AMX135TCG
NCP170AMX150TCG
NCP170AMX170TCG
NCP170AMX180TCG
NCP170AMX190TCG
NCP170AMX250TCG
NCP170AMX280TCG
NCP170AMX285TCG
NCP170AMX300TCG
NCP170AMX310TCG
NCP170AMX320TCG
NCP170AMX330TCG
NCP170AMX360TCG
NCP170BMX120TCG
NCP170BMX135TCG
NCP170BMX150TCG
NCP170BMX170TCG
NCP170BMX180TCG
NCP170BMX190TCG
NCP170BMX250TCG
NCP170BMX280TCG
NCP170BMX285TCG
NCP170BMX300TCG
NCP170BMX310TCG
NCP170BMX320TCG
NCP170BMX330TCG
NCP170BMX360TCG
1.2
1.35
1.5
1.7
1.8
1.9
2.5
2.8
2.85
3.0
3.1
3.2
3.3
3.6
1.2
1.35
1.5
1.7
1.8
1.9
2.5
2.8
2.85
3.0
3.1
3.2
3.3
3.6
AT
AD
AL
AE
AF
AK
AA
AN
AQ
AG
AM
2C
2P
Yes
XDFN4 1.0 × 1.0
3000 / Tape & Reel
(Pb-Free)
2J
2T
2D
2L
2E
No
2F
2K
2A
2N
2Q
2G
2M
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19
NCP170
ORDERING INFORMATION
Nominal
Output Voltage
Active
Discharge
†
Device
Marking
AC
AL
Package
Shipping
NCP170AXV120T2G
NCP170AXV135T2G
NCP170AXV150T2G
NCP170AXV180T2G
NCP170AXV190T2G
NCP170AXV210T2G
NCP170AXV250T2G
NCP170AXV280T2G
NCP170AXV300T2G
NCP170AXV310T2G
NCP170AXV330T2G
NCP170BXV120T2G
NCP170BXV135T2G
NCP170BXV150T2G
NCP170BXV180T2G
NCP170BXV190T2G
NCP170BXV250T2G
NCP170BXV280T2G
NCP170BXV300T2G
NCP170BXV310T2G
NCP170BXV330T2G
NCP170ASN280T2G
NCP170ASN300T2G
NCP170ASN330T2G
1.2
1.35
1.5
1.8
1.9
2.1
2.5
2.8
3.0
3.1
3.3
1.2
1.35
1.5
1.8
1.9
2.5
2.8
3.0
3.1
3.3
2.8
3.0
3.3
AJ
AD
AM
AK
Yes
AE
AF
AA
AN
AH
2C
SOT−563
(Pb-Free)
4000 / Tape & Reel
(Available Soon)
2L
2J
2D
2M
2E
No
2F
2A
2N
2H
GCA
GCC
GCD
TSOP−5
(Pb-Free)
3000 / Tape & Reel
(Available Soon)
Yes
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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20
NCP170
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
MX SUFFIX
CASE 711AJ
ISSUE A
4X L2
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
E
4X b2
2X
0.05
C
MILLIMETERS
DETAIL A
DIM MIN
0.33
A1 0.00
MAX
0.43
0.05
0.05
C
2X
A
TOP VIEW
A3
b
b2 0.02
0.10 REF
0.15
0.25
0.12
(A3)
0.05
0.05
C
D
1.00 BSC
D2 0.43
0.53
1.00 BSC
0.65 BSC
A
E
e
L
C
0.20
0.30
0.17
SEATING
PLANE
NOTE 4
A1
L2 0.07
C
SIDE VIEW
e
e/2
RECOMMENDED
MOUNTING FOOTPRINT*
DETAIL A
4X L
D2
1
4
2
2X
0.52
0.65
PITCH
D2
PACKAGE
OUTLINE
455
3
4X
4X b
0.39
4X
0.11
1.20
M
0.05
C A B
NOTE 3
BOTTOM VIEW
4X
0.24
4X
0.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
21
NCP170
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
XV SUFFIX
CASE 463A
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
A
−X−
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
0.5 BSC
0.20
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
22
NCP170
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
MIN
2.85
1.35
0.90
0.25
MAX
3.15
1.65
1.10
0.50
DETAIL Z
J
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
0.05
H
SEATING
PLANE
END VIEW
C
10
3.00
_
_
SIDE VIEW
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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