NCP5810 [ONSEMI]

Dual 1 W Output AMOLED Driver Supply; 双1 W输出AMOLED驱动器电源
NCP5810
型号: NCP5810
厂家: ONSEMI    ONSEMI
描述:

Dual 1 W Output AMOLED Driver Supply
双1 W输出AMOLED驱动器电源

驱动器
文件: 总13页 (文件大小:192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCP5810  
Dual 1 W Output AMOLED  
Driver Supply  
The NCP5810 is a dual−output DC/DC converter which can  
generate both a positive and a negative voltage. Both PWM  
converters achieve high efficiency for portable application. Thanks  
to the high output voltage accuracy and signal integrity the NCP5810  
is particularly suitable for powering applications such as AMOLED  
display drivers. The output voltage of the inverter is fully  
configurable using external feedback resistors, where the output  
voltage of the boost is internally fixed. The switching regulator  
operates at 1.75 MHz which allows the use of small inductors and  
ceramic capacitors. In addition both converters are internally  
compensated which simplifies the design and reduces the PCB  
component count. Cycle−by−cycle peak current limit and thermal  
shut down provide value added features to protect the device. The  
NCP5810 is housed in a low profile space efficient 3 x 3 x 0.55 mm  
LLGA package.  
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1
12 PIN LLGA  
MU SUFFIX  
CASE 513AD  
MARKING DIAGRAM  
Features  
5810  
AYWG  
G
High Overall Efficiency: 83% (Refer to Figure 4)  
Low Noise 1.75 MHz PWM DC/DC Converter  
Positive Output Fixed + 4.6 V  
5810  
A
Y
W
G
= Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Negative Output from − 2.0 to − 15.0 V  
High Output Voltage Accuracy  
Excellent Line Transient Rejection  
Soft Start to Limit Inrush Current  
(Note: Microdot may be in either location)  
Enable Control Facility with True−Shut Down  
Small LLGA 3 x 3 x 0.55 mm Package  
1
2
3
4
5
6
12  
11  
10  
9
VOUTP  
SWP  
LXP  
PVIN  
SWN  
EN  
Typical Applications  
AMOLED Driver Supply  
Cellular Phones  
PGND  
AGND  
VREF  
VS  
MP3 Player  
Digital Cameras  
Personal Digital Assistant and Portable Media Player  
GPS  
NCP5810  
(Top View)  
8
AVIN  
FBN  
7
12−pin 3 x 3 x 0.55 mm LLGA  
Exposed pad must be soldered to PCB Ground plane  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 12 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2007 − Rev. 0  
NCP5810/D  
NCP5810  
L1 4.7 mH  
VBAT  
U1  
12  
11  
3
2
VOUTP  
PVIN  
SWP  
1
C1  
4.7 mF  
VOUTP  
C3  
4.7 mF  
PGND  
EN  
ENABLE  
VBAT  
9
6
NCP5810  
VS  
8
AVIN  
D1  
VOUTN  
C2  
10  
1 mF  
SWN  
C4  
4.7 mF  
4
5
7
L2  
4.7 mH  
R2  
56 k  
C5  
0.1 mF  
R1  
536 k  
D1: ON NSR0320MW2  
L1, L2: TDK VLF3010AT−4R7  
C1: 4.7 mF 6.3 V X5R  
C2: 1 mF 6.3 V X5R 0603  
C1,C3,C4: 4.7 mF 6.3 V X5R 0805  
C6 10 pF  
Figure 1. Typical Application Circuit  
Option of powering  
CINP  
Vbat  
4.7 mF  
L1  
4.7 mH  
CINA  
1 mF  
D2  
AVIN  
PVIN  
MP0  
LXP  
SWP  
VOUTP  
Thermal  
VOUTP  
Shut down  
COUTP  
4.7 mF  
BOOST  
MN1  
ENABLE  
EN  
PWM CONTROLLER  
Osc  
Bangap  
1.26 V  
VS  
1.75 Mhz  
D1  
MP1  
SWN  
VOUTN  
COUTN  
NEGATIVE BUCK  
PWM CONTROLLER  
4.7 mH  
L2  
Verf  
4.7 mF  
1.26 V  
R1  
10 pF  
R2  
FBN  
AGND  
PGND  
VREF  
0.1 mF  
Figure 2. Simplified Block Diagram  
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2
 
NCP5810  
PIN FUNCTION DESCRIPTION  
Pin  
Pin Name  
Type  
Description  
1
VOUTP  
OUTPUT  
Positive Power Output: A filter capacitor is necessary on this pin for the stability of the loop, to  
smooth the current flowing into the load, and limit the noise created by the fast transients present in  
this circuitry. A 4.7 mF ceramic bypass capacitor to GND is recommended. Cares must be observed  
to avoid EMI through the PCB copper tracks connected to this pin.  
2
3
SWP  
POWER  
POWER  
Switch LXP: Positive power switch pin where one end of the L1 inductor is connected. Typical ap-  
plication uses a 4.7 mH inductor.  
PGND  
Power Ground: This pin is the power ground and carries the high switching current. A high quality  
ground must be provided to avoid any noise spikes/uncontrolled operation. Cares must be observed  
to avoid high−density current flow in a limited PCB copper track.  
4
5
AGND  
VREF  
POWER  
OUTPUT  
Analog Ground: This pin is the analog ground of the device notably used by VREF.  
Voltage Reference: This output provides a 1.265 V voltage reference used notably for the negative  
feedback resistive network.  
6
7
VS  
INPUT  
INPUT  
Positive Output Voltage Sense: This pin is the output voltage sense input for the positive boost  
converter and must be connected to COUTP bypass capacitor.  
FBN  
Feedback Negative: This pin is the feedback voltage input for the negative Buck−Boost inverter. The  
middle point of a resistive bridge divider must be connected here. The resistive network must be con-  
nected between VREF and the anode of external Schottky.  
8
9
AVIN  
EN  
POWER  
INPUT  
Analog Power Supply: The external voltage supply is connected to this pin. A 4.7 mF ceramic ca-  
pacitor must be connected across this pin and the power ground to achieve the specified output pow-  
er parameters.  
Enable: An active high logic level on this pin enables the circuit. A built−in pull−down resistor disables  
the device if the pin is left open. Also in disable condition the device provide a true cut−off from PVIN  
to VOUTP and SWN.  
10  
11  
12  
SWN  
PVIN  
LXP  
INPUT  
POWER  
POWER  
Switch Negative: Negative power switch pin where one end of the L2 inductor is connected. Typical  
application uses a 4.7 mH inductor.  
Power Supply: This pin is the power supply of the device. A 4.7 mF ceramic capacitor or larger must  
bypass this input to the ground. This capacitor should be placed as close a possible to this input.  
Switch LXP: The inductor should be connected between this node and SWP. This output supplies  
power from PVIN and give a true−cut off function in disable condition.  
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3
NCP5810  
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
Unit  
V
Power Supply Voltage (Note 2)  
V
bat  
7.0  
2000  
Human Body Model (HBM) ESD Rating are (Note 3)  
Machine Model (MM) ESD Rating are (Note 3)  
ESD HBM  
ESD MM  
V
200  
V
Digital Input Voltage  
Digital Input Current  
ENP, ENN  
−0.3 V V +0.3  
V
mA  
in  
1
bat  
LLGA 3x3 mm package (Notes 6 and 7)  
Thermal Resistance Junction−to−Case  
R
q
JC  
12  
°C/W  
Operating Ambient Temperature Range  
Operating Junction Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
T
−40 to +85  
−40 to +125  
+150  
°C  
°C  
°C  
°C  
A
T
J
T
JMAX  
T
STG  
−65 to +150  
Level 1  
Moisture Sensitivity (Note 5)  
MSL  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
NOTES:  
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T = 25°C  
A
2. According to JEDEC standard JESD22−A108B.  
3. This device series contains ESD protection and passes the following tests:  
Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22−A114 for all pins.  
Machine Model (MM) 200 V per JEDEC standard: JESD22−A115 for all pins.  
4. Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78., class II  
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.  
6. The thermal shutdown set to 165°C (typical) avoids irreversible damage on the device due to power dissipation.  
7. The R  
is dependent on the PCB heat dissipation. The maximum power dissipation (P ) is dependent on the min input voltage, the max output  
q
CA  
D
current and external components selected.  
125 * T  
A
RqCA  
+
* RqJC  
PD  
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NCP5810  
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T between −40°C to +85°C and V between 2.7 V to 4.6 V (Unless  
A
IN  
otherwise noted). Typical values are referenced to T = +25°C and V = 3.7 V (Unless otherwise noted)  
A
IN  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
POSITIVE BOOST DC/DC CONVERTER  
Positive Operational Output Voltage Range  
Maximum Inductor Peak Current  
Switches P0 ON Resistance  
V
4.55  
530  
4.6  
700  
320  
4.65  
800  
640  
V
OUTP  
I
mA  
mW  
PEAKP_MAX  
P0  
MOS  
R
DSON  
Switches N1 ON Resistance  
Switches N1 Leakage Current  
N
R
300  
0.05  
85  
600  
0.5  
mW  
mA  
1MOS  
DSON  
N
1MOS  
L
At V = 4.2 V  
IN  
Efficiency (Notes 8, 9)  
E
%
FF  
Positive Output Current Available (Notes 9, 10)  
I
mA  
OUTP  
VIN 3.1 V  
VIN 2.9 V, T between 0 to +85°C  
0
0
270  
145  
A
Output Voltage Line Regulation I  
= 0 mA  
L
10  
mV  
OUTP  
INE_RP  
2.7 < V < 4.6  
IN  
Output Voltage Line Transient Overshoot (Note 12)  
L
4
mV  
dB  
INE_TP  
Power Supply Ripple Rejection (Notes 9, 13)  
1.0 Hz to 1.0 kHz  
1.0 kHz to 10 kHz  
P
SRRP  
60  
40  
Output Voltage Load Regulation (Note 14)  
L
0.5  
%/100mA  
mV  
OAD_RP  
Output Voltage Load Transient Response: Overshoot and  
Undershoot Vs. Steady State Voltage (Notes 9, 15)  
L
TRP  
100  
NEGATIVE BUCK DC/DC CONVERTER  
Typical Negative Operational Output Voltage Range  
Peak Inductor Current (Note 9)  
V
−15  
620  
−2.0  
920  
V
OUTN  
I
800  
700  
mA  
mW  
PEAKN_MAX  
Switches P2 ON Resistance  
P
2MOS  
R
DSON  
1400  
Switches P2 Leakage Current  
P
L
0.05  
80  
0.5  
mA  
2MOS  
At V = 4.2 V  
IN  
Efficiency (Notes 8, 9)  
E
FF  
%
Negative Output Power Available (Notes 9, 10) @ V  
= −5.4 V  
P
OUTN  
mA  
OUTN  
VIN 3.1 V  
VIN 2.9, T between 0 to +85°C  
0
175  
100  
A
Output Voltage Reference 0 mA < I  
< 100 mA  
O
−1 %  
−2 %  
1.265  
0.632  
+1 %  
+2 %  
V
REF  
VR  
Feedback Voltage Threshold in Steady State:  
F
BVN  
mV  
2.7 < V < 4.6  
IN  
Feedback Input Current  
F
−50  
50  
20  
nA  
BICN  
Output Voltage Line Regulation at I  
= 0 mA (Note 11)  
L
mV  
OUTN  
INE_RN  
2.7 < V < 4.6  
IN  
Output Voltage Line Transient Overshoot (Note 12)  
L
4
mV  
dB  
INE_TN  
Power Supply Ripple Rejection (Notes 9, 13)  
1.0 Hz to 1.0 kHz  
1.0 kHz to 10 kHz  
P
SRRN  
60  
40  
Load Regulation (Notes 11, 14)  
L
0.5  
%/100mA  
mV  
OAD RN  
Load Transient Response: Overshoot and Undershoot Vs.  
Steady State Voltage (Notes 9, 15)  
L
TRN  
100  
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5
NCP5810  
ELECTRICAL CHARACTERISTICS (Min & Max Limits apply for T between −40°C to +85°C and V between 2.7 V to 4.6 V.  
A
IN  
Typical values are referenced to T = +25°C and V = 3.7 V, unless otherwise noted)  
A
IN  
Rating  
Symbol  
Min  
Typ  
Max  
Unit  
Operational Power Supply  
V
IN  
2.7  
4.6  
V
Internal Oscillator Frequency, T = 25°C, V = 3.7 V  
F
OSC  
1.6  
87  
1.75  
90  
1.9  
MHz  
%
A
IN  
Maximum Duty Cycle  
M
DCY  
STB  
Stand by Current at I  
= I  
OUTN  
= 0 mA, EN = Low  
I
2.0  
mA  
OUTP  
V
IN  
= 4.2 V, T between 0 to +85°C  
A
Quiescent Current @ V  
Switching (Note 9)  
No Switching  
= −5.4 V @ T = +25°C  
I
Q
mA  
OUTN  
A
1.5  
1.0  
3.0  
Soft Start Time to limit the Inrush Current  
Thermal Shut Down Protection  
Thermal Shut Down Protection Hysteresis  
Voltage Input Logic Low  
S
1.0  
165  
15  
ms  
°C  
°C  
V
ST  
T
SD  
T
SDH  
V
0.4  
IL  
Voltage Input Logics High  
V
1.2  
280  
V
IH  
EN pin Pull Down Resistance  
NOTES:  
R
ENP  
400  
670  
kW  
8. Efficiency is defined by 100 * (Pout / Pin), Vin = 3.1 to 4.2 V, L = VLF3010AT−4R7MR70 (DCR = 280 mW max, Isat = 700 mA), Load = 15  
to 30 mA, Voutn = −5.4 V.  
9. Guaranteed by design and characterized.  
10.Typical application circuit and components depicted Figure 1.  
11. Tested at 25°C and guaranteed from −40°C to +85°C by characterization.  
12.Line drop and rise between 3.4 to 2.9 V in 50 ms at I  
= 25 mA, V  
= −5.4 V.  
OUT  
OUTN  
13.Ripple = 0.2 V p−p at 25°C, Cout = 4.7 mF, I  
= 0 to 100 mA, V = 3.7 V.  
OUT  
IN  
14.I  
from 0 to 100 mA.  
OUT  
15.Load step 10 to 90 mA and 90 to 10 mA, rising and falling edge in 10 ms, Cout = 4.7 mF, V = 3.7 V.  
IN  
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NCP5810  
TYPICAL OPERATING CHARACTERISTICS  
80  
70  
80  
V
IN  
= 3.7 V  
V
IN  
= 4.5 V  
70  
V
IN  
= 2.9 V  
V
IN  
= 3.7 V  
V
IN  
= 2.9 V  
60  
50  
60  
50  
V
OUTN  
= −5.4 V  
V
OUTN  
= −5.4 V  
0
50  
100  
150  
(mA)  
200  
250  
0
50  
100  
150  
(mA)  
200  
250  
I
I
OUT  
OUT  
Figure 3. Efficiency vs. IOUT  
Figure 4. Efficiency vs. IOUT, L = MURAWA  
L = MURAWA CXFU0208−4R7  
CXFU0208−4R7 plus Optional D2 NSR0320MW2  
Figure 5. Line Transient Response V  
at 100 mA  
Figure 6. Line Transient Response V  
= −5.4 V,  
OUTP  
OUTN  
1 VBAT, 500 mV/div DC, from 3.5 to 3.0 V in 50 ms  
100 mA 1 VBAT, 500 mV/div DC, from 3.5 to 3.0 V in 50 ms  
2 VOUTP, 10 mV/div AC, T = 400 ms/div  
2 VOUTN, 10 mV/div AC, T = 400 ms/div  
Figure 7. Continuous Conduction Mode (CCM)  
Figure 8. Discontinuous Current Mode (DCM)  
1 SWP, 5 V/div DC, 4 I , 100 mA/div, DC, I  
= 100 mA  
1 SWP, 5 V/div, DC 4 I , 50 mA/div, DC, I  
= 20 mA  
LP  
OUTP  
LP  
OUTP  
Figures 7 and 8 have been done at VBAT = 3.7 V, V  
= −5.4 V  
OUTN  
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NCP5810  
TYPICAL OPERATING CHARACTERISTICS  
Figure 9. Continuous Conduction Mode (CCM)  
Figure 10. Discontinuous Current Mode (DCM)  
1 SWN, 5 V/div DC, 4 I , 100 mA/div, DC, I  
= 100 mA  
1 SWN, 5 V/div, DC 4 I , 50 mA/div, DC, I  
= 20 mA  
LN  
OUTN  
LN  
OUTN  
Figure 11. Positive Output Voltage Ripple in CCM  
Figure 12. Negative Output Voltage Ripple in CCM  
1 V  
, 10 mV/div AC, 4 I , 100 mA/div DC, I  
= 100 mA  
1 V  
, 10 mV/div AC, 4 I , 100 mA/div DC, I  
= 100 mA  
OUTP  
LP  
OUTP  
OUTN  
LN  
OUTN  
V
OUTP  
V
OUTN  
Figure 13. Start−Up After Enable  
1 VOUTP, 2 V/div, 2 VOUTN, 2 V/div, 3 EN pin, 2 V/div  
Figures 9 through 12 have been done at VBAT = 3.7 V and schematic depict Figure 1  
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NCP5810  
DETAILED OPERATING DESCRIPTION  
Option of powering  
V Bat  
2.7 to 5.5 V  
L1  
4.7 mH  
CINA  
CINP  
1 mF  
4.7 mF  
AVIN  
PVIN  
AVIN  
LXP  
SWP  
SCHOTTKY  
MPO  
VOUTP  
VOUTP  
BAND GAP  
1.245 V  
THERMAL  
TSD  
COUTP  
4.7 mF  
PROTECTION  
ENABLE  
X5R 10V  
True Cut−Off  
FBP  
FBP  
ERROR  
AMP  
MAX DP  
1
2
3
4
5
6
7
1.260 V  
+
TSD  
RST  
8
OPAMP  
MN1  
PWM  
COMPP  
+
Driver  
RAMP  
COMP  
SENSE  
CURRENT  
SET  
ONE  
SHOT  
+
IPEAK MAX P  
IPEAK  
COMP  
Ipeak Max Threshold P  
OSC  
1.75 Mhz  
ENABLE  
EN  
ENABLE  
Ipeak Max Threshold N  
PIVIN  
IPEAK MAX N  
400 k  
IPEAK  
COMP  
+
SENSE  
NSR0320  
D1  
CURRENT  
SWN  
VOUTN  
COUTN  
MP1  
1
2
3
4
5
6
7
FBN  
+
ERROR  
AMP  
FBN  
PWM  
COMPN  
RST  
8
TSD  
LX2  
4.7 mH  
4.7 mF  
+
623 mV  
X5R 10V  
MAX DN  
R3  
OPAMP  
R4  
VREF  
1.260 V  
ONE S  
SET  
PGND  
AGND  
AGND  
PGND  
Figure 14. Functional Block Diagram  
Boost Operation  
Detailed Descriptions  
The internal oscillator provides a 1.75 MHz clock signal  
to trigger the PWM controller on each rising edge (SET  
signal) which starts a cycle. During this phase the low side  
MN1 switch is turned on thus increasing the current  
through the inductor L1. The switch current is measured by  
the SENSE CURRENT and added to the RAMP COMP  
signal. Then PWM COMPP compares the output of the  
adder and the signal from ERROR AMP. When the  
comparator threshold is exceeded, the MN1 power switch  
is turned off until the rising edge of the next clock cycle. In  
The NCP5810 is a dual−output DC/DC converter which  
can generate both a positive and a negative voltage. The  
output voltage of the inverter is fully configurable using  
external feedback resistors. The switching regulator  
operates at 1.75 MHz which allows the use of small  
inductors and ceramic capacitors. The both converters are  
internally compensated which simplifies the design and  
reduces the PCB component count. Cycle−by−cycle peak  
current limit and thermal provide value added features to  
protect the device.  
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NCP5810  
High Output Voltage Accuracy  
addition, there are five functions which can reset the  
flip−flop logic to switch off the MN1. The MAX DP  
monitors the pulse width and if it exceeds 88% (nom) of the  
cycle time the switch will be turned off. This limits the  
switch from being on for more than one cycle. IPEAK  
COMP compares the sensed inductor current with the  
IPEAK_MAX threshold set at 700 mA (nom). If the current  
exceeds this value, the controller turns off the NMOS  
switch for the remainder of the cycle. This is a safety  
function to prevent any excessive current that could  
overload the inductor and the power stage. The boost  
regulator is internally compensated and provides a  
minimum of 45° phase margin.  
NCP5810 integrates a very accurate internal voltage  
reference (1% nom). Combined with the use of precision  
feedback resistors, the NCP5810 will achieve highly  
precise output voltages.  
Excellent Line Transient Rejection and High Power  
Supply Rejection Ratio  
High output voltage accuracy and signal integrity makes  
the NCP5810 the perfect solution for biasing Active Matrix  
OLED displays. In order to have a steady, clean display,  
OLEDs have to be biased by a very accurate voltage with  
high immunity to line and load transients. Both regulators  
have been specifically designed with high loop gain and  
high phase margin to satisfy the great constraints of  
AMOLED driving.  
Buck−Boost Inverter Operation  
Figure 9 depicts the two intervals of the buck−boost  
operation in Continuous Conduction Mode (CCM) in a  
simplified way. During the first interval, the internal PMOS  
power switch is turned on and the external Schottky diode  
is reverse biased. The inductor stores energy through the  
battery while the load is supplied by the output capacitor to  
maintain regulation. During the second interval, the switch  
is turned off and the diode is forward biased, this allows the  
energy stored in the inductor to be supplied to both the load  
and the capacitor.  
The boost converter features a high power supply  
rejection ratio of 60 dB (nom).  
PSRR is defined by  
OutputRipple  
VinRipple  
* 20LOGǒ  
Ǔ
Enable  
This input logic allows enabling and disabling the  
converter. An active high logic level on this pin enables the  
device. A built−in pull−down resistor disables the device if  
the pin is left open.  
In CCM, the voltage ratio of a buck−boost inverter  
converter can be expressed as:  
VOUT_N  
TON  
TSW  
D
1 * D  
+
where D +  
True Shut Down  
VIN  
When in disable condition, the switch MP0 is turned off  
and truly isolates the battery from the output. The True shut  
down eliminates the leakage current from the battery to the  
load and significantly reduces battery consumption during  
disable condition, thus increasing battery life.  
The internal oscillator provides a 1.75 MHz clock signal  
to trigger the PWM controller on each rising edge (SET  
signal) which starts a cycle. During this phase the high side  
PMOS switch is turned on thus increasing the current  
through the inductor. The switch current is measured by the  
SENSE CURRENT and added to the RAMP COMP signal.  
Then PWM COMPN compares the output of the adder and  
the signal from ERROR AMP. When the comparator  
threshold is exceeded, the PMOS power switch is turned off  
until the rising edge of the next clock cycle. In addition,  
there are five functions which can reset the flip−flop logic  
to switch off the NMOS. The MAX DUTY CYCLE COMP  
monitors the pulse width and if it exceeds 88% (nom) of the  
cycle time the switch will be turned off. This limits the  
switch from being on for more than one cycle. IPEAK  
COMP compares the sensed inductor current with the  
IPEAK_MAX threshold set at 800 mA (nom). If the current  
exceeds this value, the controller turns off the PMOS  
switch for the remainder of the cycle. This is a safety  
function to prevent any excessive current that could  
overload the inductor and the power stage. The buck−boost  
inverter is internally compensated and provides a  
minimum of 45° phase margin.  
Inrush Current Limiting Circuitry  
Before the NCP5810 boost converter is turned on, it is  
unknown whether the output capacitor COUTP is charged  
or discharged. If the output capacitor is discharged, a  
common boost converter shows high inductor inrush  
current at start−up. The internal circuitry of the NCP5810  
has been carefully designed to limit the amplitude of the  
inrush current at start−up.  
Thermal Shutdown  
When the IC junction temperature exceeds 165°C (nom),  
the power section of the device is disabled. Normal  
operation will resume when the junction temperature drops  
below 150°C (nom).  
Design Procedure  
Buck−Boost Inverter Output Voltage Setting  
The output voltage of the buck−boost inverter is also  
adjusted using external feedback resistors, and can be set  
from −2 V down to −15 V. Unlike for the boost converter,  
the lower feedback resistor R2 does not use the ground as  
a reference but uses the reference voltage (nom 1.265 V).  
Sequencing  
The sequencing is designed internally. The positive  
output first comes up, and then the negative output does.  
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10  
NCP5810  
R2 is placed between the feedback pin FBN (nom 632 mV)  
typically for each DC/DC converter, it is recommended to  
use a 4.7 mH low profile inductor. Some recommended  
inductors include but are not limited to:  
and the reference pin REF. As for the boost converter, the  
current flowing out of the feedback resistors must be as low  
as possible to ensure high efficiency in low load conditions.  
Nevertheless the feedback resistor impedance must not be  
too high to keep good voltage accuracy. Therefore it is  
recommended to use values in the 10 kW to 100 kW range  
for the lower resistor R2. The upper feedback resistor R1  
can calculated using the following equation:  
TDK: VLF3010AT−4R7MR70 (1.0 mm)  
TDK: MLP3216S2R7T (0.6 mm)  
SUMIDA: CDH2D09BNP (1.0 mm)  
MURAWA CXFU0208−4R7 (0.8 mm)  
Schottky Diode Selection  
VOUTN * VFBN  
An external diode is required for the rectification of the  
negative output. The reverse voltage rating of the selected  
diode must be equal to or greater than the difference  
between the output voltage of the inverter and the input  
voltage. The average current rating of the diode must be  
greater than the maximum output load current. The peak  
current rating must be larger than the maximum peak  
inductor current. It is recommended to use a Schottky diode  
with lower forward voltage to minimize the power  
dissipation and therefore to maximize the efficiency of the  
converter.  
ǒ
Ǔ
R1 + R2   
VFBN * VREF  
VREF  
2
But : VFBN  
+
2   ŤVOUTNŤ  
So: R1 + R2   
ǒ
1 )  
Ǔ
VREF  
For example, should one need –5.4 V for V  
, if a  
OUTN  
56 kW 1% is selected of R2, R1 should be selected  
according to the following equation:  
Also a particular care must be observed for parasitic  
capacitance versus reverse voltage and leakage current  
versus junction diode temperature. Both parameters are  
impacting the efficiency in low load condition and  
switching quiescent current.  
2   5.4  
ǒ
1.265 Ǔ + 536 kW "1%  
R1 + 56   1 )  
Inductor Selection  
Three different electrical parameters need to be  
considered when selecting an inductor, the absolute value  
of the inductor, the saturation current and the DCR. During  
normal operation, the NCP5810 is intended to operate in  
Continuous Conduction Mode (CCM). The two equations  
below can be used to calculate the peak current for each  
converters:  
Some recommended Schottky diodes include but are not  
limited to:  
ON SEMICONDUCTOR: NSR0320MW2  
ON SEMICONDUCTOR: RB521S30  
ROHM: RSX051VA−30  
PHILIPS: PMEG2005AEL  
IOUT_P  
hP   (1 * DP) 2   LP   F  
VIN   DP  
IPEAK_P  
+
)
Input and Output Capacitors  
C
and C  
store energy during the T  
phase  
For the boost converter  
OUTP  
OUTN  
OFF  
and sustain the load during the T  
phase. In order to  
ON  
IOUT_N   DN  
VIN   DN  
minimize the output ripple, a 4.7 mF low ESR multi−layer  
ceramic capacitor type X5R is recommended. To achieve  
high performances (signal integrity) two 4.7 mF 6.3 V X5R  
IPEAK_N  
+
)
hN   (1 * DN) 2   LN   F  
For the buck−boost inverter  
should be used to bypass the input supply, C  
and C  
.
INA  
Where V is the battery voltage, I  
is the load  
INP  
IN  
OUT_X  
Also a particular care must be observed for DC−bias  
effects in ceramic capacitor. Actually smaller the case−size  
and higher the DC bias voltage, the bigger drop in  
capacitance. For a stability viewpoint the percentage drop  
in capacitance for the chosen input or output operating  
voltage must be limit to 20%.  
current, L the inductor value, F the switching frequency,  
and D the duty cycle.  
X
The global converter efficiency h varies with load  
current. A good approximation is to use h = 0.8 from the  
boost and h = 0.75 for the buck−boost inverter. It is  
important to ensure that the inductor current rating is high  
enough such that it not saturate. As the inductor size is  
reduced, the peak current for a given set of conditions  
increases along with higher current ripple so it is not  
possible to deliver maximum output power at lower  
inductor values. Finally an acceptable DCR must be  
selected regarding losses in the coil and must be lower than  
300 mW to limit excessive voltage drop. In addition, as  
DCR is reduced, overall efficiency will improve. The  
inductor value should range between 2.7 mH and 6.8 mH,  
Some recommended capacitors include but are not  
limited to:  
4.7 mF 6.3 V 0603  
TDK: C1608X5R0J475MT  
TDK: CGB4B1X5R0J475M (0.5 mm)  
4.7 mF 10 V 0805  
TDK: C2012X5R1A475MT  
MURATA: GRM219R61A475KE  
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11  
NCP5810  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCP5810MUTXG  
LLGA−123x3 mm  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
Demo Board Available:  
The NCP5810GEVB/D evaluation board that configures the device in typical application to supply constant voltage.  
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12  
NCP5810  
PACKAGE DIMENSIONS  
12 PIN LLGA  
MU SUFFIX  
CASE 513AD  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A
D
B
E
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.30 MM FROM TERMINAL TIP.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
PIN ONE  
REFERENCE  
MILLIMETERS  
DIM MIN  
MAX  
0.60  
0.05  
0.30  
2X  
A
A1  
b
0.50  
0.00  
0.20  
0.15  
C
2X  
D
3.00 BSC  
D2  
E
E2  
e
2.75  
3.00 BSC  
1.65  
0.50 BSC  
2.85  
0.15  
C
TOP VIEW  
1.75  
K
L
0.20  
0.35  
−−−  
0.45  
0.10  
0.08  
C
C
A
12X  
SIDE VIEW  
D2  
A1  
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
3.30  
12X  
0.56  
1
e
6
1
0.25  
PITCH  
0.40  
12X K  
12X L  
E2  
2.78  
11X  
0.28  
12  
7
12X  
0.10 C A  
B
1.73  
b
0.05  
C
NOTE 3  
DIMENSIONS: MILLIMETERS  
BOTTOM VIEW  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
MountingTechniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any  
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over  
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under  
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,  
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of  
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
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NCP5810/D  

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