NCP6361AFCCT1G [ONSEMI]
Buck Converter with Bypass Mode for RF Power Amplifiers;
| 型号： | NCP6361AFCCT1G |
| 厂家： | 
ONSEMI |
| 描述： | Buck Converter with Bypass Mode for RF Power Amplifiers |
| 文件： | 总20页 (文件大小：1261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCP6361
Buck Converter with
Bypass Mode for RF Power
Amplifiers
The NCP6361, a PWM synchronous step−down DC−to−DC
converter, is optimized for supplying RF Power Amplifiers (PAs) used
in 3G/4G wireless systems (Mobile / Smart Phones, Tablets,…)
powered by single−cell Lithium−Ion batteries. The device is able to
deliver up to 2 A current in bypass mode and 800 mA in buck mode.
The output voltage is monitorable from 0.4 V to 3.5 V by an analog
control pin VCON. The analog control allows dynamically optimizing
the RF Power Amplifier’s efficiency through the monitoring of the PA
output power. With an improved overall system efficiency the
communication time and phone autonomy can be consequently
increased. At light load for optimizing the DC−to−DC converter
efficiency, the NCP6361 enters automatically in PFM mode and
operates in a slower switching frequency. The NCP6361 enters in
bypass mode when the desired output voltage becomes close to the
input voltage (e.g.: low battery conditions). The device operates at
3.429 MHz or 6 MHz switching frequency. This way the system
tuning can focus respectively either on a better efficiency (3.249 MHz)
or on employing smaller value inductor and capacitors (6 MHz).
Synchronous rectification and automatic PFM / PWM / By−Pass
operating mode transitions improve overall solution efficiency. The
NCP6361 has two versions: NCP6361A and NCP6361B. Version B
has a spread spectrum function for low EMI operation. The NCP6361
is available in a space saving, low profile 1.36 x 1.22 mm CSP−9
package.
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MARKING
DIAGRAM
6361x
ALYWW
G
WLCSP9
CASE 567GM
6361x = Specific Device Code
x = A or B
A
L
Y
= Assembly Location
= Wafer Lot
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 19 of this data sheet.
Features
• Input Voltage from 2.5 V to 5.5 V for Battery Powered
Applications
• Low 45 mA Quiescent Current
• Thermal Protections to Avoid Damage of the IC
• Small 1.36 x 1.22 mm / 0.4 mm Pitch CSP Package
• This is a Pb−Free Device
• Adjustable Output Voltage (0.4 V to 3.50 V)
• 3.429 / 6 MHz Selectable Switching Frequency
• Uses 470 nH Inductor and 4.7 mF Capacitor for
Optimized Footprint and Solution Thickness
• PFM /PWM/Bypass Automatic Mode Change for High
Efficiency
Typical Applications
• 3G / 4G Wireless Systems, Smart−Phones and Webtablets
VBATT
Battery or
System
Supply
NCP6361
Bypass
Enable
FB
BPEN
Bypass Control
Vout Control
Bypass
VCON
AGND
PVIN
SW
10uF
DCDC
V
OUT
Thermal
Protection
1.0A
3.43/6.00 MHz
0.47uH
FSEL
EN
4.7uF
PGND
Enabling
Figure 1. NCP6361 Block Diagram
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2014 − Rev. 5
NCP6361/D
NCP6361
NCP6361
VBATT
FB
BPEN
VCON
Bypass Control
GPI/O
DAC
Bypass
Battery or
System
Supply
PVIN
SW
Vout Control
10uF
AGND
DCDC
DCDC Out
Thermal
Protection
1.0A
3.43/6.00 MHz
0.47uH
FSEL
EN
GPI/O
GPI/O
4.7uF
PGND
Enabling
Rev 0.00
RF IN
RF TX
Antenna
Switch
Coupler
RF OUT
3G/4G PAs
Power
Envelop
Detection
Figure 2. Typical Application
FB
PVIN
C3
C2
Cin
Bypass
Control
LX
VOUT
Cout
C1
B2
B1
SW
BPEN
FSEL
EN
B3
Logic
Block
A2
PFM / PWM
Contoller
A3 PGND
AGND
Thermal
Shutdown
Error
Amp
Ramp
A1
VCON
Generator
3.43 / 6 MHz
Figure 3. NCP6361 Internal Block Diagram
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2
NCP6361
1.36 mm
A1
A2
A3
AGND
PGND
VCON
B1
B2
B3
EN
FSEL
SW
C2
FB
C3
C1
BPEN
PVIN
Figure 4. Pin Out (Top View)
PIN FUNCTION DESCRIPTION
Pin
Name
Type
Description
Voltage Control Analog Input. This pin controls the output voltage. It must be shielded to protect
A1
VCON
Input
against noise. V = 2.5 x VCON
OUT
A2
A3
AGND
PGND
Ground
Ground
Analog Ground. Analog and digital modules ground. Must be connected to the system ground.
DC−DC Power Ground. This pin is the power ground and carries high switching current. High
quality ground must be provided to prevent noise spikes. To avoid high−density current flow in a
limited PCB track, a local large ground plane is recommended.
B1
EN
Input
Input
Enable Control. Active high will enable the part. There is an internal pull down resistor on this pin.
B2
B3
C1
C2
C3
FSEL
SW
Frequency selection pin. Active low will select 6 MHz switching frequency. Active high will select
3.429 MHz switching frequency. Internal pull−down resistor connected to this pin.
Power
Output
DC−DC Switch Power. This pin connects the power transistors to one end of the inductor. Typical
application (6 MHz) uses 0.470 mH inductor; refer to application section for more information.
BPEN
FB
Input
Bypass Enable Pin. Set a high level to force bypass mode. Set a low level for auto−bypass mode.
Internal pull−down resistor connected to this pin.
Power
Input
DCDC Feedback Voltage. Must be connected to the output capacitor positive terminal. This is the
input to the error amplifier.
PV
Power
Input
DCDC Power Supply. This pin must be decoupled to ground by a 10 mF and 1 mF ceramic
capacitor. These capacitors should be placed as close as possible to this pin.
IN
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NCP6361
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Analog and power pins: PV , SW, FB
V
A
−0.3 to + 7.0
−0.3 to + 2.5
IN
VCON pin
V
VCON
V
Digital pins: EN, BPEN & FSEL:
Input Voltage
V
I
−0.3 to V +0.3 ≤ 7.0
V
mA
DG
DG
A
10
Input Current
Operating Ambient Temperature Range
Operating Junction Temperature Range (Note 1)
Storage Temperature Range
T
−40 to +85
−40 to +125
−65 to + 150
−40 to +150
85
°C
°C
A
T
J
T
STG
°C
Maximum Junction Temperature
T
°C
JMAX
Thermal Resistance Junction−to−Ambient (Note 2)
Moisture Sensitivity (Note 3)
R
°C/W
q
JA
MSL
Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The thermal shutdown set to 165°C (typical) avoids potential irreversible damage on the device due to power dissipation.
2. The Junction−to−Ambient thermal resistance is a function of Printed Circuit Board (PCB) layout and application. This data is measured using
4−layer PCBs (2s2p). For a given ambient temperature T it has to be pay attention to not exceed the max junction temperature T
.
A
JMAX
3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
OPERATING CONDITIONS
Symbol
Parameter
Power Supply (Note 4)
Conditions
Min
Typ
Max
Unit
V
PV
2.5
5.5
IN
L
Inductor for DCDC converter (Note 5)
F = 6 MHz
0.47
−
mH
mF
Co
Output Capacitor for DCDC Converter
(Note 5)
F = 6 MHz, L = 0.47 mH
4.7
33
33
Co
Output Capacitor for DCDC Converter
(Note 5)
F = 6 MHz, L = 0.33 mH
−
220
mF
L
Inductor for DCDC converter (Note 5)
F = 3.429 MHz
1
−
mH
mF
Co
Output Capacitor for DCDC Converter
(Note 5)
F = 3.429 MHz, L = 1 mH
4.7
33
33
Co
Output Capacitor for DCDC Converter
(Note 5)
F = 3.429 MHz, L = 0.47 mH
−
220
mF
mF
Cin
Input Capacitor for DCDC Converter
(Note 5)
4.7
10
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. Operation above 5.5 V input voltage for extended period may affect device reliability.
5. Including de−ratings (refer to application information section of this document for further details)
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NCP6361
ELECTRICAL CHARACTERISTICS
Min and Max Limits apply for T up to +85°C unless otherwise specified. PV = 3.6 V (Unless otherwise noted). Typical values are
A
IN
referenced to T = + 25°C and default configuration
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY CURRENT: PIN PV
IN
I
Operating quiescent current
Product sleep mode current
Product off current
DCDC on – no load – no
switching, EN = High
−
45
60
mA
Q
T = up to +85°C
A
I
PV = 2.5 V to 5.5 V
−
−
55
70
3
mA
mA
SLEEP
IN
V
< 0.1 V, EN = High
CON
T = up to +85°C
A
I
EN = Low
0.9
OFF
PV = 2.3 V to 5.5 V
IN
T = up to +85°C
A
DCDC CONVERTER
PV
Input Voltage Range
2.5
−
5.5
V
V
IN
V
Minimum Output Voltage
Maximum Output Voltage
V
= 0.16 V (Note 8)
= 1.40 V (Note 8)
0.35
3.45
0.40
3.50
2.5
0.45
3.55
OUT_MIN
CON
V
V
CON
V
OUT_MAX
Gain
V
to V
Gain
V/V
CON
OUT
OUT
V
V
Accuracy
Ideal = 2.5 x V
−50
−3
+50
+3
mV
%
OUT_ACC
CON
F
F
Switching Frequency
FSEL = 0
FSEL = 1
5.4
3.085
−
6
6.6
3.772
−
MHz
MHz
mW
SW1
Switching Frequency
3.429
177
SW2
R
P−Channel MOSFET On Resistance
From PV to SW
IN
ONHS
T up to +85°C, PV = 3.6 V
J
IN
R
N−Channel MOSFET On Resistance
BP MOSFET On Resistance
From SW1 to PGND
−
−
100
217
−
−
mW
mW
ONLS
ONBP
PKHS
T up to 85°C, PV = 3.6 V
J
IN
R
From PV to FB
IN
T up to 85°C, PV = 3.6 V
J
IN
I
Peak Inductor Current PMOS
Peak Inductor Current NMOS
Maximum Duty Cycle
Efficiency
−
−
−
1.4
1.0
100
75
−
−
−
A
A
I
PKLS
DC
%
%
MAX
h
PV = 3.6 V, V
= 0.8 V
IN
OUT
I
= 10 mA, PFM mode
OUT
PV = 3.6 V, V
= 1.8 V
90
95
%
%
IN
OUT
I
= 200 mA, PWM mode
OUT
PV = 3.9 V, V
= 3.3 V
IN
OUT
I
= 500 mA, PWM mode
OUT
LINE
Line Transient Response
Load Transient Response
PV = 3.6 V to 4.2 V
50
50
mV
TR
IN
pk
pk
I
= 100 mA, V
= 0.8 V
OUT
OUT
T
R
= T = 10 ms
F
LOAD
PV = 3.1 V / 3.6 V / 4.5 V
IN
mV
TR
I
= 50 to 150 mA
OUT
T
R
= T = 0.1 ms
F
V
V
Vcon Forced Bypass Mode Enter
Vcon Forced Bypass Mode Exit
1.6
V
V
CON_BP_EN
1.4
CON_BP_EX
6. Guaranteed by design and characterized.
7. Operation above 5.5 V input voltage for extended periods may affect device reliability.
8. Tested and guaranteed by correlation.
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NCP6361
ELECTRICAL CHARACTERISTICS
Min and Max Limits apply for T up to +85°C unless otherwise specified. PV = 3.6 V (Unless otherwise noted). Typical values are
A
IN
referenced to T = + 25°C and default configuration
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
EN, BPEN
V
Positive Going Input High Voltage
Threshold
1.1
−
−
−
−
V
V
IH
V
Negative Going Input Low Voltage
Threshold
0.4
IL
TOTAL DEVICE
I
PWM mode (Note 6)
BP mode (Note 6)
800
mA
mA
ms
OUTMAX
2000
T
VCON
V
OUT
step rise time
PV = 3.6 V, V
= 1.4 V to
L
< 1 ms
8
6
IN
OUT
3.4 V, C
= 4.7 mF, R = 12 W,
OUT
T
R_VCON
V
OUT
step fall time
PV = 3.6 V, V
= 3.4 V to
L
< 1 ms
ms
ms
IN
OUT
1.4 V, C
= 4.7 mF, R = 12 W,
OUT
T
F_VCON
T
Soft−Start Time (Time from EN trans-
itions from Low to High to 90% of Output
Voltage)
PV = 4.2 V, C = 4.7 mF,
OUT
−
50
90
START
IN
OUT
V
= 3.4 V, no load (Note 8)
T
T
Sleep mode Enter Time
Sleep mode Exit Time
VCON < 75 mV
VCON > 75 mV
−
−
4
5
−
−
ms
ms
SP_en
SP_ex
V
Auto Bypass Detection Negative thresh-
old
PV – V
200
mV
BPNEG
IN
OUT
V
V
Auto Bypass Detection Positive thresh-
old
PV – V
320
mV
BPPOS
IN
OUT
V
UVLO
Under Voltage Lockout
PV falling
−
60
−
−
−
2.4
200
−
V
IN
Under Voltage Lockout Hysteresis
Thermal Shut Down Protection
Thermal Shut Down Hysteresis
PV rising − PV falling
mV
°C
°C
UVLOH
IN
IN
T
SD
155
30
T
−
−
SDH
6. Guaranteed by design and characterized.
7. Operation above 5.5 V input voltage for extended periods may affect device reliability.
8. Tested and guaranteed by correlation.
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 0.47 mH, C
= 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN sw A
Figure 5. Shutdown Current vs Input Voltage
(EN = Low, VCON = 0 V)
Figure 6. Shutdown Current vs Temperature (TA)
(EN = Low, VCON = 0 V)
Figure 7. Quiescent Current vs. Input Voltage
(EN = High, VCON = 0.8 V, VOUT = 2 V)
Figure 8. Quiescent Current vs Temperature (TA)
(EN = High, VCON = 0.8 V, VOUT = 2 V)
Figure 9. Sleep Mode Current vs. Input Voltage
(EN = High, VCON = 0 V, VOUT = 0 V)
Figure 10. Sleep Mode Current vs. Temperature
(TA)
(EN = High, VCON = 0 V, VOUT = 0 V)
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 0.47 mH, C
= 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 12. 3.429 MHz Switching Frequency
Variation (Fsw) vs. Temperature (L = 1 mH)
Figure 11. 6 MHz Switching Frequency
Variation (Fsw) vs. Temperature
Figure 14. High−Side PMOS RDS(on) vs. PVIN
and Temperature
Figure 13. By−Pass PMOS RDS(on) vs. PVIN and
Temperature
Figure 15. Low−Side NMOS RDS(on) vs. PVIN and
Temperature
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 0.47 mH, C
= 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 17. Efficiency vs Output Current vs
Temperature PVIN = 3.6 V, Fsw = 6 MHz,
Figure 16. Efficiency vs Output Current vs PVIN
@255C, Fsw = 6 MHz, VOUT = 0.8 V
V
OUT = 0.8 V
Figure 19. Efficiency vs Output Current vs
Temperature PVIN = 3.6 V, Fsw = 6 MHz,
VOUT = 1.8 V
Figure 18. Efficiency vs Output Current vs PVIN
@255C, Fsw = 6 MHz, VOUT = 1.8 V
Figure 20. Efficiency vs Output Current vs PVIN
Figure 21. Efficiency vs Output Current vs
Temperature PVIN = 3.6 V, Fsw = 6 MHz,
@255C, Fsw = 6 MHz, VOUT = 3.3 V
V
OUT = 3.3 V
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 1 mH, C
= 4.7 mF, C = 10 mF, F = 3.429 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 23. Efficiency vs Output Current vs
Temperature PVIN = 4.2 V, Fsw = 3.429 MHz,
Figure 22. Efficiency vs Output Current vs PVIN
@255C, Fsw = 3.429 MHz, VOUT = 0.8 V
V
OUT = 0.8 V
Figure 25. Efficiency vs Output Current vs
Temperature PVIN = 4.2 V, Fsw = 3.429 MHz,
VOUT = 1.8 V
Figure 24. Efficiency vs Output Current vs PVIN
@255C, Fsw = 3.429 MHz, VOUT = 1.8 V
Figure 26. Efficiency vs Output Current vs PVIN
Figure 27. Efficiency vs Output Current vs
Temperature PVIN = 4.2 V, Fsw = 3.429 MHz,
@255C, Fsw = 3.429 MHz, VOUT = 3.3 V
V
OUT = 3.3 V
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 0.47 mH, C
= 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 29. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
Figure 28. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 6 MHz, VOUT = 0.8 V
V
OUT = 0.8 V
Figure 31. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
Figure 30. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 6 MHz, VOUT = 1.8 V
V
OUT = 1.8 V
Figure 32. VOUT Accuracy vs Output Current vs
Figure 33. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
PVIN @ 255C, FSW = 6 MHz, VOUT = 3.3 V
V
OUT = 3.3 V
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
PV = EN = 3.6 V, L = 1 mH, C
= 4.7 mF, C = 10 mF, F = 3.429 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 35. VOUT Accuracy vs Output Current
vs Temperature PVIN = 4.2 V,
Figure 34. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 3.429 MHz, VOUT = 0.8 V
FSW = 3.429 MHz, VOUT = 0.8 V
Figure 37. VOUT Accuracy vs Output Current
vs Temperature PVIN = 4.2 V,
Figure 36. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 3.429 MHz, VOUT = 1.8 V
FSW = 3.429 MHz, VOUT = 1.8 V
Figure 38. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 3.429 MHz, VOUT = 3.3 V
Figure 39. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V,
FSW = 3.429 MHz, VOUT = 3.3 V
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NCP6361
TYPICAL OPERATING CHARACTERISTIC
PV = EN = 3.6 V, L = 0.47 mH, C
= 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
OUT
IN
sw
A
Figure 40. Transient Response VOUT vs VCON
Figure 41. Line Transient Response
RL = 10 W, VOUT = 0.4 V to 3.5 V, PVIN = 3.9 V
PVIN = 3.6 V to 4.2 V, RL = 10 W, VOUT = 2.5 V
I
L
I
L
Figure 42. Output Voltage Waveforms in PFM Mode
OUT = 50 mA, VOUT = 2.5 V
Figure 43. Output Voltage Waveforms in PWM Mode
IOUT = 250 mA, VOUT = 2.5 V
I
Figure 44. Load Transient Response
OUT = 10 to 250 mA, VOUT = 2.5 V
Figure 45. Load Transient Response
IOUT = 50 mA to 150 mA, VOUT = 0.8 V
I
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NCP6361
TYPICAL OPERATING CHARACTERISTICS
(Results based on silicon Rev1.0 – Rev 1.1 to come)
PV = EN = 3.7 V, L = 0.47 mH, Cout = 4.7 mF, C = 10 mF, F = 6 MHz, T = 25°C (unless otherwise noted)
IN
IN
sw
A
I
L
I
L
Figure 46. Power−up Transient Response
PVIN = 3.9 V, Vout = 3.4 V, Iout = 150 mA
Figure 47. Power−up Transient Response
PVIN = 3.9 V, Vout = 3.4 V, Iout = 800 mA
I
L
Figure 48. Power−down Transient Response
PVIN = 3.7 V, Vout = 3.4 V, RL = 10 W
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NCP6361
OPERATING DESCRIPTION
General Description
oscillator and most of the control circuitries are turned off.
The typical current consumption is 0.9 mA. Applying a
voltage above 1.1 V to EN pin will enable the device for
normal operation. A soft−start sequence is run when
activating EN high. EN pin should be activated after the
input voltage is applied.
The NCP6361 is a voltage−mode standalone synchronous
step−down DC−to−DC converter designed to supply RF
Power Amplifiers (PAs) used in 3G/4G wireless systems
(Mobile / Smart Phones, Tablets, …) powered by single−cell
Lithium−Ion batteries. The IC can deliver up to 800 mA
when operating in PWM mode and up to 2 A when in
by−pass operating mode.
PWM (Pulse Width Modulation) Operating Mode
In medium and high load conditions, the NCP6361
operates in PWM mode from a fixed clock (3.43 MHz or
6 MHz) and adapts its duty cycle to regulate the desired
output voltage. In this mode, the inductor current is in CCM
(Continuous Current Mode) and the voltage is regulated by
PWM. The internal N−MOSFET switch operates as
synchronous rectifier and is driven complementary to the
P−MOSFET switch. In CCM, the lower switch
(N−MOSFET) in a synchronous converter provides a lower
voltage drop than the diode in an asynchronous converter,
which provides less loss and higher efficiency.
The buck converter output voltage ranging from 0.4 V to
3.5 V can be monitored by the system’s PA output RF power
through the control pin VCON. The control voltage range is
from 0.16 V to 1.4 V and Vout is equal to 2.5 times this
control voltage. VCON allows the PA to have its efficiency
dynamically optimized during communication calls in the
case for example of roaming situation or data transmission
involving a constant adjustment of the PA output power. The
value−added benefit is an increase of the absolute talk time.
Synchronous rectification and automatic PFM / PWM /
By−Pass operating mode transitions improve overall
solution efficiency. The device operates at 3.429 MHz or 6
MHz switching frequency. This way tuning the DC−to−DC
converter can focus respectively either on a better efficiency
(3.429 MHz) or on employing smaller value inductor and
capacitors (6 MHz). These two switching frequencies are
selectable using a dedicated pin FSEL.
A By−pass mode is also supported and is enable
automatically or can be forced through the BPEN pin. The
output voltage is the copy of the battery input voltage minus
a drop−out voltage resulting from the By−Pass MOSFET
transistor’s low on−state resistance in parallel with the
High−Side FET RDSON resistance added to the inductor
series resistance.
PFM (Pulse Frequency Modulation) Operating Mode
In order to save power and improve efficiency at low loads
the NCP6361 operates in PFM mode as the inductor drops
into DCM (Discontinuous Current Mode). The upper FET
on time is kept constant and the switching frequency is
variable. Output voltage is regulated by varying the
switching frequency which becomes proportional to loading
current. As it does in PWM mode, the internal N−MOSFET
operates as synchronous rectifier after each P−MOSFET
on−pulse. When load increases and current in inductor
becomes continuous again, the controller automatically
turns back to PWM mode.
By−Pass Operating Mode
The NCP6361 has been designed to manage low battery
Protections are also implemented for preventing the
device against over−current or short−circuit event or over
junction temperature situation.
conditions when PV or VBAT becomes close to the
IN
required Vout output voltage. In that case the NCP6361
enters By−pass Operating mode (or wire mode). To this end
a specific low resistance on−state By−Pass MOSFET is
included and activated while the buck converter low side
N−MOSFET is set off. The PA is then directly powered by
the battery. The output voltage is the copy of the input
voltage minus a drop−out voltage resulting from the
resistance of the BP MOSFET in parallel with the
High−Side P−MOSFET plus the inductor: the consequence
is a resulting resistance smaller than the available one −
P−MOSFET + inductor − when in PWM mode and 100%
duty cycle. In that specific case the By−pass mode offers a
better efficiency.
Buck DC−to−DC Converter Operating
The converter is a synchronous rectifier type with both
high side and low side integrated switches. In addition it
includes a by−pass MOSFET transistor. Neither external
transistor nor diodes are required for NCP6361 operation.
Feedback and compensation network are also fully
integrated. The device can operate in five different modes:
shutdown mode (EN = Low, device off), Sleep Mode when
VCON below about 0.1 V, PFM mode for efficiency
optimization purpose when operating at light load, PWM
mode when operating in medium and high loads and Bypass
mode when PV (Vbatt) is close to Vout (low battery
IN
The By−pass mode is triggered automatically when PV
IN
situation). The transitions between PWM, PFM and
By−pass modes occur automatically.
= V
+ 200 mV typically. The NCP6361 exit
OUT
automatically the By−pass mode when PV = V
+
IN
OUT
320 mV typically. Nevertheless it is possible to force the
By−pass mode by setting the pin BPEN High. In By−Pass
mode the NCP6361 is capable to source a current of up to
2 A.
Shutdown Mode
The NCP6361 enters shutdown mode when setting the EN
pin Low (below 0.4 V) or when PV drops below its UVLO
threshold value. In shutdown mode, the internal reference,
IN
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15
NCP6361
Sleep Mode
Under−voltage Lockout (UVLO)
The NCP6361 device enters the sleep mode in about 4ms
when the control voltage VCON goes below typically
70 mV. Vout is extremely low, close to 0 V and in a state out
of regulation. In this Vout condition the Sleep mode enables
a low current state (55 mA typical range). The buck
converter exits the sleep mode and returns in a regulation
state when VCON goes above 110 mV after typically 5 ms.
NCP6361 core does not operate for voltages below the
Under Voltage lock Out (UVLO) level. Below UVLO
threshold, all internal circuitry (both analog and digital) is
held in reset. NCP6361 operation is not guaranteed down to
VUVLO when battery voltage is dropping off. To avoid
erratic on / off behavior, a maximum 100 mV hysteresis is
implemented. Restart is guaranteed at 2.6 V when VBAT
voltage is recovering or rising.
Inductor Peak Current limitations
During normal operation, peak current limitation will
monitor and limit the current through the inductor. This
current limitation is particularly useful when size and/or
height constrain inductor power. The High Side Switch
(HSS) peak current limitation is typically 1.4 A, while the
Low Side Switch (LSS) has a peak current up to 1.0 A. The
HSS peak current contributes to limit the current during soft
start sequence in high load conditions (see Figure 46).
Power−Up / Power−Down Sequencing
The EN pin controls NCP6361 start up. EN pin Low to
High transition starts the power up sequencer which is
combined with a soft start consisting to limit the inrush
current at 800 mA while the output voltage is establishing.
If EN is made low, the DC to DC converter is turned off and
device enters shutdown mode.
A built−in pull−down resistor disables the device when
this pin is left unconnected or not driven.
PV
IN
Rising UVLO< 2.6 V
POR
EN
VOUT
HSS Ipeak
IOUT
Soft Start800mA
ms
Wake Up Time~ 30
Figure 49. Power−Up Sequence
Spread Spectrum
In order to power up the circuit, the input voltage PVIN
has to rise above the UVLO threshold (Rising UVLO). This
triggers the internal core circuitry power up which is the
“Wake Up Time” (including “Bias Time”).
This delay is internal and cannot be bypassed.
The power down sequence is triggered by setting Low the
EN pin. The output voltage goes down to 0 V.
The NCP6361A version operates at a constant frequency
while the NCP6361B has a spread spectrum mode activated.
The switching frequency is dithered around a center
frequency of 3.429 MHz (FSEL = High) or of 6 MHz (FSEL
= Low) depending on the FSEL position selected. Spread
spectrum lowers noise at the regulated output and at the
input.
Thermal Shutdown Feature (TSD)
The spread−spectrum modulation technique spreads the
energy of switching frequency and harmonics over a wider
band while reducing their peaks. This option can help to
meet stringent EMI goals. The spread−spectrum feature
implemented consists in adding spurs generated from a
24 MHz on−chip oscillator with the result of spreading the
buck’s switching frequency. This option allows reducing the
peak power at the switching frequency by about 10 dB and
by the way reduces the noise level compared to a standard
mode of operation.
The thermal capability of IC can be exceeded due to step
down converter output stage power level. A thermal
protection circuitry is therefore implemented to prevent the
IC from damage. This protection circuitry is only activated
when the core is in active mode (output voltage is turned on).
During thermal shut down, output voltage is turned off and
the device enters sleep mode.
Thermal shut down threshold is set at 155°C (typical)
when the die temperature increases and, in order to avoid
erratic on / off behavior, a 30°C hysteresis is implemented.
So, after a typical 155°C thermal shut down, the NCP6361
will return to normal operation when the die temperature
cools to 120°C. This normal operation depends on the input
conditions and configuration at the time the device recovers.
The NCP6361B can definitely be used for EMI−sensitive
applications.
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16
NCP6361
APPLICATION INFORMATION
VBATT
NCP6361
FB
BPEN
Bypass Control
Vout Control
GPI/O
DAC
Bypass
Battery or
System
Supply
VCON
AGND
PVIN
SW
10uF
DCDC
DCDC Out
Thermal
Protection
1.0A
3.43/6.00 MHz
0.47uH
FSEL
EN
GPI/O
GPI/O
4.7uF
PGND
Enabling
Rev 0.00
RF IN
RF TX
Antenna
Switch
Coupler
RF OUT
3G/4G PAs
Power
Envelop
Detection
Figure 50. Typical Application Schematic
Output Filter Design Considerations
The output filter introduces a double pole in the system at
a frequency of:
50% of the maximum output current I
for a
OUTMAX
trade−off between transient response and output ripple. The
selected inductor must have high enough saturation current
rating to be higher than the maximum peak current that is:
1
fLC
+
(eq. 1)
Ǹ
ILPP
2 @ p @ L @ C
(eq. 2)
ILMAX + IOUTMAX
)
The NCP6361 internal compensation network is
optimized for a typical output filter comprising a 470 nH
inductor and one 4.7 mF capacitor as described in the basic
application schematic Figure 50.
2
The inductor also needs to have high enough current
rating in regards to temperature rise. Low DCR is good for
efficiency improvement and temperature rise reduction.
Tables 1 and 2 show recommended inductor references.
Inductor Selection
The inductance of the inductor is determined by given
peak−to−peak ripple current I
of approximately 20% to
LPP
Table 1. RECOMMENDED INDUCTORS WHEN OPERATING AT 6 MHz
Size (L x l x T)
DC Rated Current
(A)
DCR Max @ 255C
(mW)
(mm)
Supplier
Part#
Value (mH)
TDK
TFM201610A−R47M−T00
TFM201210A−R47M−T00
DFE201610R−R47M−T00
DFE201610A−R47M−T00
0.47
20x16x1
20x12x1
20x16x1
20x16x1
3.5
2.5
3.8
3.7
46
65
48
58
TDK
0.47
Toko
0.47
Toko
0.47
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17
NCP6361
Table 2. RECOMMENDED INDUCTORS WHEN OPERATING AT 3.43 MHz
Size (L x l x T)
DC Rated Current
(A)
DCR Max @ 255C
(mW)
(mm)
Supplier
Part #
Value (mH)
TDK
TFM201610A−1R0M−T00
DFE201610R−1R0M−T00
1
1
20x16x1
20x16x1
2.9
2.7
75
79
Toko
Output Capacitor Selection
ripple and get better decoupling in the input power supply
rail, ceramic capacitor is recommended due to low ESR and
ESL. The minimum input capacitance regarding the input
ripple voltage VINPP is
The output capacitor selection is determined by output
voltage ripple and load transient response requirement. For
high transient load performance high output capacitor value
must be used. For a given peak−to−peak ripple current ILPP
in the inductor of the output filter, the output voltage ripple
across the output capacitor is the sum of three components
as below.
2
Ǔ
ǒ
IOUTMAX @ D * D
(eq. 9)
CINMIN
+
VINPP @ fSW
Where
VOUTPP + VOUTPP(C) ) VOUTPP(ESR) ) VOUTPP(ESL)
VOUT
(eq. 10)
(eq. 3)
D +
VIN
Where VOUTPP(C) is the ripple component coming from
an equivalent total capacitance of the output capacitors,
VOUTPP(ESR) is a ripple component from an equivalent ESR
of the output capacitors, and VOUTPP(ESL) is a ripple
component from an equivalent ESL of the output capacitors.
In PWM operation mode, the three ripple components can
be obtained by
In addition the input capacitor needs to be able to absorb
the input current, which has a RMS value of:
Ǹ
IINRMS + IOUTMAX @ D * D2
(eq. 11)
The input capacitor needs also to be sufficient to protect
the device from over voltage spike and a minimum of 4.7 mF
capacitor is required. The input capacitor should be located
as close as possible to the IC. PGND is connected to the
ground terminal of the input cap which then connects to the
IL_PP
(eq. 4)
VOUTPP(C)
+
8 @ C @ fSW
ground plane. The PV is connected to the V
of the input capacitor which then connects to the V
plane.
terminal
IN
BAT
VOUTPP(ESR) + ILPP @ ESR
(eq. 5)
(eq. 6)
BAT
ESL
VOUT_PP(ESL)
+
@ VIN
ESL ) L
Layout and PCB Design Recommendations
Good PCB layout helps high power dissipation from a
small package with reduced temperature rise. Thermal
layout guidelines are:
• A four or more layers PCB board with solid ground
planes is preferred for better heat dissipation.
And the peak−to−peak ripple current is:
ǒ
Ǔ
PVIN * VOUT @ VOUT
(eq. 7)
ILPP
+
PVIN @ FSW @ L
In applications with all ceramic output capacitors, the
main ripple component of the output ripple is V (C).
So that the minimum output capacitance can be calculated
• More free vias are welcome to be around IC to connect
OUTPP
the inner ground layers to reduce thermal impedance.
regarding to a given output ripple requirement V
PWM operation mode.
in
• Use large area copper especially in top layer to help
thermal conduction and radiation.
OUTPP
• Use two layers for the high current paths (PVIN,
PGND, SW) in order to split current in two different
paths and limit PCB copper self heating.
ILPP
(eq. 8)
CMIN
+
8 @ VOUTPP @ fSW
(See demo board example Figure 52)
Input Capacitor Selection
One of the input capacitor selection guides is the input
voltage ripple requirement. To minimize the input voltage
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18
NCP6361
4.1 mm
0402
1.5 x 0.9 mm
VCON
AGND
FSEL
FB
PGND
EN
SW
BPEN
PVIN
S < 10.3 mm2
Figure 51. Layout Minimum Recommended Occupied Space Using 0402 Capacitors and 0805
(2.0 x1.2 x1 mm) Inductor
Input capacitor placed as close as possible to the IC.
• PGND directly connected to Cin input capacitor, and
• PV directly connected to Cin input capacitor, and
then connected to the GND plane: Local mini planes
used on the top layer (green) and layer just below top
layer with laser vias.
IN
then connected to the Vin plane. Local mini planes used
on the top layer (green) and layer just below top layer
with laser vias.
• SW connected to the Lout inductor with local mini
planes used on the top layer (green) and layer just
below top layer with laser vias.
• AGND directly connected to the GND plane.
Figure 52. Example of PCB Implementation
(PCB case with 0805 (2.0x1.2 mm) Capacitors and 2016 (2.0 x 1.6 x 1 mm) Inductors
ORDERING INFORMATION
†
Device
Spread−Sprectrum Option (F
)
Package
Shipping
SW
NCP6361AFCCT1G
NCP6361BFCCT1G
No
WLCSP9
(Pb−Free)
3000 / Tape & Reel
Yes
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Evaluation Boards:
NCP6361AGEVB and NCP6361BEVB evaluation boards are available under request. Contact Local Sales Representative
or Sales Office.
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19
NCP6361
PACKAGE DIMENSIONS
WLCSP9, 1.36x1.22
CASE 567GM
ISSUE A
NOTES:
D
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE SPHERICAL
CROWNS OF THE SOLDER BALLS.
A3
PIN A1
REFERENCE
A2
E
MILLIMETERS
DIM
A
A1
A2
A3
b
MIN
−−−
0.17
0.36 REF
0.02
0.24
MAX
0.60
0.23
2X
0.10
0.10
C
DETAIL A
2X
C
0.04
0.29
TOP VIEW
D
1.36 BSC
E
e
1.22 BSC
0.40 BSC
A
DETAIL A
A2
0.10
0.05
C
A1
C
RECOMMENDED
SOLDERING FOOTPRINT*
C
SEATING
PLANE
PACKAGE
OUTLINE
A1
NOTE 3
SIDE VIEW
e
9X
b
9X
e
0.25
0.05
0.03
C
C
A B
C
B
A
0.40
PITCH
0.40
PITCH
DIMENSIONS: MILLIMETERS
1
2
3
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NCP6361/D
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