NCS199 [ONSEMI]
Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift;
| 型号： | NCS199 |
| 厂家： | 
ONSEMI |
| 描述： | Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCS199A1, NCS199A2,
NCS199A3
Current-Shunt Monitor,
Voltage Output,
Bi-Directional Zero-Drift
www.onsemi.com
The NCS199A1, NCS199A2 and NCS199A3 are voltage output
current shunt monitors that can measure voltage across shunts at
common−mode voltages from −0.3 V to 26 V, independent of supply
voltage. Three fixed gains are available: 50 V/V, 100 V/V or 200 V/V.
The low offset of the zero−drift architecture enables current sensing
with maximum drops across the shunt as low as 10 mV full−scale.
The devices can operate from a single +2.7 V to +26 V power
supply, drawing a maximum of 100 mA of supply current. All versions
are specified over the extended operating temperature range (–40°C to
+125°C).
SC70−6
SQ SUFFIX
CASE 419B
PIN CONNECTIONS
REF
6
5
4
1
2
3
OUT
IN−
Features
−
+
GND
• Wide Common−Mode Input Range −0.3 V to 26 V
• Supply Voltage Range from 2.7 V to 26 V
• Low Offset Voltage 150 mV Max
• Low Offset Drift (0.5 mV/°C)
• Low Gain Error (max 1.5%)
• Rail−to−rail Input and Output Capability
• Low Current Consumption (typ 65 mA, 100 mA max)
V
S
IN+
MARKING DIAGRAM
6
XXXMG
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
G
1
• These are Pb−free Devices
XXX = Specific Device Code (See page 4)
M
= Date Code
Typical Applications
• Current Sensing (High−Side/Low−Side)
• Automotive
G
= Pb−Free Package
(Note: Microdot may be in either location)
• Telecom
Product
NCS199A1
NCS199A2
NCS199A3
Gain
50
R3−R4
20 kW
10 kW
5 kW
R1−R2
1 MW
1 MW
1 MW
• Sensors
100
200
ǒ
Ǔ
VOUT + ILOAD RSHUNT GAIN ) VREF
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 1
NCS199/D
NCS199A1, NCS199A2, NCS199A3
R
SHUNT
Supply
Load
NCS199Ax
R1
R3
−
IN−
IN+
Output
OUT
REF
+
Reference
Voltage
R4
R2
V
S
+2.7 V to +26 V
0.01 mF
To
0.1 mF
Figure 1. Application Schematic
Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Supply Voltage (Note 1)
Analog Inputs
V
S
+26
Differential (V )−(V
)
IN−
V V
IN+, IN−
−26 to +26
V
IN+
Common−Mode (Note 2)
GND−0.3 to +26
REF Input
V
GND−0.3 to ( V ) +0.3
V
V
REF
s
Output (Note 2)
V
OUT
GND−0.3 to ( V ) +0.3
s
Input Current into Any Pin (Note 2)
Maximum Junction Temperature
Storage Temperature Range
5
+150
mA
°C
°C
V
T
J(max)
TSTG
HBM
MM
−65 to +150
3000
ESD Capability, Human Body Model (Note 3)
ESD Capability, Machine Model (Note 3)
Charged Device Model (Note 3)
100
V
CDM
1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.
3. This device series incorporates ESD protection and is tested by the following methods
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model tested per AEC−Q100−011.
Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78
Table 2. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, SC70 (Note 4)
R
250
°C/W
q
JA
Thermal Resistance, Junction−to−Air (Note 5)
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2
2
5. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate.
Table 3. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
2.7
Max
26
Unit
V
Supply Voltage
V
T
S
Ambient Temperature
−40
125
°C
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NCS199A1, NCS199A2, NCS199A3
Table 4. ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T = −40°C to 125°C, guaranteed by characterization and/or design.
A
At T = +25°C, V
= V
− V , V = +5 V, V
= 12 V, and V
= V /2, unless otherwise noted.
REF S
A
SENSE
IN+
IN−
S
IN+
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
GAIN
NCS199A1
NCS199A2
NCS199A3
G
50
V/V
100
200
Gain Error
V
= −5 mV to 5 mV
G
+ 0.2
7
+ 1.5
%
ppm/°C
%
SENSE
e
Gain Error vs. Temperature
Nonlinearity Error
T
A
= −10°C to 125°C
20
V
= −5 mV to 5 mV
0.01
1
SENSE
Maximum Capacitive Load
VOLTAGE OFFSET
No sustained oscillation
nF
Offset Voltage
Offset Drift
INPUT
NCS199A1/2/3
NCV199A2
(RTI Note 6), V
= 0 mV
V
5.0
20
150
200
mV
SENSE
OS
NCS199A2, NCS199A3
NCS199A1
dV/dT
0.1
0.5
0.6
2.0
mV/°C
Input Bias Current
V
= 0 mV
I
60
mA
V
SENSE
IB
Common−Mode Input Voltage Range
V
CM
−0.3
100
26
Common−Mode
Rejection Ratio
NCS199A2,
NCS199A3
V = 5 V, V
= 2 V to +26 V,
= 0 mV
CMRR
CMRR
CMRR
115
115
120
110
110
115
115
115
120
dB
S
IN+
V
SENSE
V = 3.3 V, V
= 3 V to +26 V,
= 0 mV
100
100
97
dB
dB
dB
dB
dB
dB
dB
dB
S
IN+
V
SENSE
V
= 3.3 V, V
= 0 mV (T = −10°C to 85°C)
= 0 V to +26 V,
A
S
IN+
V
V
V
SENSE
Common−Mode
Rejection Ratio
NCS199A1
NCV199A2
V = 5 V, V
= 2 V to +26 V,
= 0 mV
S
IN+
V
SENSE
V = 3.3 V, V
= 3 V to +26 V,
= 0 mV
97
S
IN+
V
SENSE
V
= 3.3 V, V
= 0 mV (T = −10°C to 85°C)
= 0 V to +26 V,
A
97
S
IN+
SENSE
Common−Mode
Rejection Ratio
V = 5 V, V
= 2 V to +26 V,
= 0 mV
95
S
IN+
V
SENSE
V = 3.3 V, V
= 3 V to +26 V,
= 0 mV
95
S
IN+
V
SENSE
V
= 3.3 V, V
= 0 mV (T = −10°C to 85°C)
= 0 V to +26 V,
A
95
S
IN+
SENSE
OUTPUT
Output Voltage Low
Referenced from GND
R = 10 kΩ to Ground
L
V
5
50
mV
V
OL
Output Voltage High
Referenced from V
V
OH
0.05
0.2
S
R = 10 kΩ to Ground
L
DYNAMIC PERFORMANCE
Bandwidth (f
)
C
C
C
= 10 pF, NCS199A1
= 10 pF, NCS199A2
= 10 pF, NCS199A3
BW
SR
100
60
kHz
−3dB
LOAD
LOAD
LOAD
40
Slew Rate
0.4
V/ms
NOISE
Spectral Density, 1 kHz (RTI Note 6)
e
n
35
nV/ǠHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. RTI = referenced−to−input.
www.onsemi.com
3
NCS199A1, NCS199A2, NCS199A3
Table 4. ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T = −40°C to 125°C, guaranteed by characterization and/or design.
A
At T = +25°C, V
= V
− V , V = +5 V, V
= 12 V, and V
= V /2, unless otherwise noted.
REF S
A
SENSE
IN+
IN−
S
IN+
Parameter
POWER SUPPLY
Test Conditions
Symbol
Min
2.7
Typ
Max
Unit
Operating Voltage Range
Quiescent Current
V
V
V
= 0 mV
= 0 mV
= 0 mV
V
s
26
100
115
10
V
mA
SENSE
SENSE
SENSE
I
65
DD
Quiescent Current over Temperature
Power Supply Rejection Ratio
mA
V
S
= +2.7 V to +26 V, V
=18 V,
PSRR
0.1
mV/V
IN+
V
= 0 mV
SENSE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. RTI = referenced−to−input.
ORDERING INFORMATION
†
Device
NCS199A1SQT2G
Gain
50
Marking
ACQ
ACR
Package
Shipping
NCS199A2SQT2G
100
200
100
200
SC70−6
(Pb−Free)
NCS199A3SQT2G
ACP
3000 / Tape and Reel
NCV199A2SQT2G* (In Development)**
NCV199A3SQT2G* (In Development)**
TBD
TBD
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
** Contact local sales office for availability.
www.onsemi.com
4
NCS199A1, NCS199A2, NCS199A3
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCS199/D
相关型号：
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