NCS20032DTBR2G [ONSEMI]
Operational Amplifiers High Slew Rate, Rail-to-Rail Output;
| 型号： | NCS20032DTBR2G |
| 厂家： | 
ONSEMI |
| 描述： | Operational Amplifiers High Slew Rate, Rail-to-Rail Output 放大器 光电二极管 |
| 文件： | 总17页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCS2003/A, NCV2003,
NCS20032, NCV20032,
NCS20034, NCV20034
Operational Amplifiers,
High Slew Rate, Low
Voltage, Rail-to-Rail Output
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MARKING
DIAGRAMS
The NCS2003 family of op amps features high slew rate, low
voltage operation with rail−to−rail output drive capability. The 1.8 V
operation allows high performance operation in low voltage, low
power applications. The fast slew rate and wide unity−gain bandwidth
(5 MHz at 1.8 V) make these op amps suited for high speed
applications. The low input offset voltage (4 mV max) allows the op
amp to be used for current shunt monitoring. Additional features
include no output phase reversal with overdriven inputs and ultra low
input bias current of 1 pA.
5
5
1
ANxYWG
G
SOT23−5
CASE 483
(NCS/NCV2003)
1
A3M
The NCS2003 family is the ideal solution for a wide range of
applications and products. The single channel NCS2003, dual channel
NCS20032, and quad channel NCS20034 are available in a variety of
compact and space−saving packages. The NCV prefix denotes that the
device is AEC−Q100 Qualified and PPAP Capable.
SOT553, 5 LEAD
CASE 463B
(NCS2003)
8
1
2K32
AYWG
G
Features
Micro8]
DM SUFFIX
CASE 846A
• Unity Gain Bandwidth: 7 MHz at V = 5 V
S
• Fast Slew Rate: 8 V/ms rising, 12.5 V/ms falling at V = 5 V
S
8
• Rail−to−Rail Output
8
20032
ALYWX
G
• No Output Phase Reversal for Over−Driven Input Signals
• Low Offset Voltage: 0.5 mV typical
• Low Input Bias Current: 1 pA typical
1
SOIC−8
CASE 751
1
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
K32
YWW
A G
TSSOP−8
T SUFFIX
CASE 948S
G
14
Applications
NCS20034G
AWLYWW
• Current Shunt Monitor
• Signal Conditioning
• Active Filter
14
1
1
SOIC−14 NB
CASE 751A
• Sensor Buffer
A
= Assembly Location
WL, L = Wafer Lot
= Year
End Products
Y
• Motor Control Drives
• Hard Drives
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
• Medical Devices
• White Goods and Air Conditioners
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2016 − Rev. 11
NCS2003/D
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
Single Channel Configuration
NCS2003/A, NCV2003
IN+
OUT
VSS
1
2
3
5
4
VDD
1
2
3
5
4
VDD
OUT
+
VSS
−
IN+
IN−
IN−
SOT23−5
(TSOP−5)
SOT553−5
Quadruple Channel Configuration
NCS20034, NCV20034
Dual Channel Configuration
NCS20032, NCV20032
OUT 1
IN− 1
IN+ 1
VDD
1
2
3
4
5
6
7
14
13
12
11
10
9
OUT 4
IN− 4
IN+ 4
VSS
OUT 1
1
8
−
+
−
+
VDD
−
2
3
4
7
6
5
OUT 2
IN− 1
IN+ 1
VSS
+
IN− 2
IN+ 2
−
IN+ 3
IN− 3
OUT 3
IN+ 2
IN− 2
+
−
+
−
+
OUT 2
8
Figure 1. Pin Connections
ORDERING INFORMATION
Device
†
Configuration
Automotive
Marking
Package
Shipping
Single
NCS2003SN2T1G
No
AN3
SOT23−5
(Pb−Free)
3000 / Tape and Reel
NCS2003ASN2T1G
NCS2003XV53T2G
NCV2003SN2T1G*
NCS20032DMR2G
NCS20032DR2G
No
No
AN4
A3
SOT23−5
(Pb−Free)
3000 / Tape and Reel
4000 /Tape and Reel
3000 / Tape and Reel
4000 / Tape and Reel
2500 / Tape and Reel
3000 / Tape and Reel
4000 / Tape and Reel
2500 / Tape and Reel
3000 / Tape and Reel
2500 / Tape and Reel
2500 / Tape and Reel
SOT553−5
(Pb−Free)
Yes
No
AN3
SOT23−5
(Pb−Free)
Dual
2K32
Micro8
(Pb−Free)
20032
K32
SOIC−8
(Pb−Free)
NCS20032DTBR2G
NCV20032DMR2G*
NCV20032DR2G*
NCV20032DTBR2G*
NCS20034DR2G
TSSOP−8
(Pb−Free)
Yes
2K32
Micro8
(Pb−Free)
20032
K32
SOIC−8
(Pb−Free)
TSSOP−8
(Pb−Free)
Quad
No
NCS20034G
NCS20034G
SOIC−14
(Pb−Free)
NCV20034DR2G*
Yes
SOIC−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and
PPAP Capable.
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2
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated
Parameter
Symbol
Limit
Unit
Supply Voltage (V − V
)
V
S
7.0
V
DD
SS
INPUT AND OUTPUT PINS
Input Voltage (Note 1)
Input Current
V
V
SS
− 0.3 to 7.0
V
IN
I
IN
10
mA
mA
Output Short Current (Note 2)
TEMPERATURE
I
O
100
Storage Temperature
Junction Temperature
ESD RATINGS (Note 3)
Human Body Model
T
−65 to 150
150
°C
°C
STG
T
J
NCx2003, A
NCx20032
NCx20034
HBM
MM
3000
2000
3000
V
V
V
Machine Model
NCx2003, A
NCx20032
NCx20034
200
100
150
Charged Device Model
NCx2003, A
NCx2003x
CDM
1000
2000
OTHER PARAMETERS
Moisture Sensitivity Level (Note 5)
Latch−up Current (Note 4)
MSL
Level 1
100
I
LU
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Neither input should exceed the range of V − 300 mV to 7.0 V. This device contains internal protection diodes between the input pins and
SS
V
DD
. When V exceeds V , the input current should be limited to the specified value.
IN DD
2. Indefinite duration; however, maximum package power dissipation limits must be observed to ensure that the maximum junction temperature
is not exceeded.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 and JESD22−A114
ESD Machine Model tested per AEC−Q100−003 and JESD22−A115
ESD Charged Device Model tested per AEC−Q100−011 and ANSI/ESD S5.3.1−2009
4. Latch−up current tested per JEDEC Standard JESD78.
5. Moisture Sensitivity Level tested per IPC/JEDEC standard J−STD−020A.
THERMAL INFORMATION
Thermal Metric
Symbol
Package
SOT23−5/TSOP−5
SOT553−5
Single Layer Board (Note 6)
Multi Layer Board (Note 7)
Unit
408
428
235
240
300
167
355
406
163
179
238
Micro8/MSOP8
SOIC−8
Junction to Ambient
Thermal Resistance
q
°C/W
JA
TSSOP−8
SOIC−14
123
2
6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm copper area
2
7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm copper area
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
V
Operating Supply Voltage (V − V
)
V
T
1.7
5.5
DD
SS
S
Specified Operating Range
NCS2003, A
NCV2003, NCx20032, NCx20034
−40
−40
+85
+125
°C
A
Input Common Mode Range
V
CM
V
SS
V −0.6
DD
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Input Offset Voltage
V
NCS2003A
0.5
0.5
3.0
4.0
5.0
mV
mV
mV
mV/°C
mV/°C
pA
OS
NCx2003, NCx20032, NCx20034
Offset Voltage Drift
DV /DT
2.0
OS
NCS2003A (Note 8)
6.0
Input Bias Current
Input Offset Current
Channel Separation
Input Resistance
I
1
1
IB
I
pA
OS
XTLK
DC, NCx20032, NCx20034
100
1
dB
R
C
TW
IN
IN
Input Capacitance
1.2
80
pF
Common Mode Rejection
Ratio
CMRR
V
IN
= V to V – 0.6 V
70
dB
SS
DD
V
IN
= V + 0.2 V to V – 0.6 V
65
SS
DD
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
VOL
R = 10 kW
80
92
92
dB
L
75
R = 2 kW
L
70
5
Output Current Capability
(Note 8)
I
Sourcing
Sinking
8
14
mA
V
SC
10
Output Voltage High
Output Voltage Low
V
1.75
1.7
1.798
1.78
7
R = 10 kW
L
OH
R = 2 kW
L
VOL
R = 10 kW
L
NCx2003, A
NCx2003x
50
mV
7
100
100
R = 2 kW
L
20
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
DYNAMIC PERORMANCE
Gain Bandwidth Product
e
f = 1 kHz
f = 1 kHz
20
nV/√Hz
pA√Hz
N
i
N
0.1
GBWP
SR
5
6
MHz
Rising Edge, R = 2 kW, A = +1
L
V
Slew Rate at Unity Gain
V/ms
Falling Edge, R = 2 kW, A = +1
9
L
V
Phase Margin
Gain Margin
y
R = 10 kW, C = 5 pF
53
12
8
°
m
L
L
A
m
R = 10 kW, C = 5 pF
NCx2003, A
NCx2003x
dB
L
L
Settling Time
t
S
V
= 1 Vpp,
Settling time to
0.1%
1.8
ms
O
Gain = 1, C = 20 pF
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
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4
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
DYNAMIC PERORMANCE
Total Harmonics Distortion +
Noise
THD+N
0.005
0.025
%
V
= 1 V , R = 2 kW, A = +1, f = 1 kHz
pp L V
O
V
O
= 1 V , R = 2 kW, A = +1, f = 10 kHz
pp
L
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
NCx2003
72
65
80
80
dB
NCx20032, NCx20034
No load, per channel
100
230
Quiescent Current
I
NCx2003, A
560
1000
375
mA
DD
NCx20032,
NCx20034
275
575
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range. Guaranteed by design and/or characterization.
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
OS
NCS2003A
NCx2003
0.5
0.5
3.0
4.0
5.0
mV
mV
mV
mV/°C
mV/°C
pA
NCx20032, NCx20034
Offset Voltage Drift
DV /DT
2.0
OS
NCS2003A (Note 9)
6.0
Input Bias Current
Input Offset Current
Channel Separation
Input Resistance
I
IB
1
1
I
pA
OS
XTLK
DC, NCx20032, NCx20034
100
1
dB
R
C
TW
IN
IN
Input Capacitance
1.2
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Common Mode Rejection Ratio
CMRR
NCx2003, A
V
= V to V –
DD
65
63
70
65
90
dB
IN
SS
0.6 V
V
= V + 0.2 V
SS
IN
to V – 0.6 V
DD
NCx20032, NCx20034
V
IN
= V to V –
DD
90
SS
0.6 V
V
= V + 0.2 V
SS
IN
to V – 0.6 V
DD
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
VOL
R = 10 kW
86
78
92
92
dB
L
R = 2 kW
L
83
78
Output Current Capability
(Note 9)
I
Sourcing
Sinking
40
76
96
mA
V
SC
50
Output Voltage High
Output Voltage Low
V
4.95
4.9
4.99
4.97
8
R = 10 kW
L
OH
R = 2 kW
L
VOL
R = 10 kW
L
NCx2003, A
NCx2003x
50
mV
8
100
100
R = 2 kW
L
24
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
DYNAMIC PERORMANCE
Gain Bandwidth Product
Slew Rate at Unity Gain
e
f = 1 kHz
f = 1 kHz
20
nV/√Hz
pA√Hz
N
i
N
0.1
GBWP
SR
7
8
MHz
Rising Edge, R = 2 kW, AV = +1
V/ms
L
Falling Edge, R = 2 kW, AV = +1
12.5
64
56
9
L
Phase Margin
y
R = 10 kW, C = 5 pF
NCx2003, A
NCx2003x
°
m
L
L
Gain Margin
Settling Time
A
m
R = 10 kW, C = 5 pF
dB
L
L
t
S
V
= 1 V
,
Settling time to
0.1%
0.6
ms
O
pp
Gain = 1, C = 20 pF
L
Total Harmonics Distortion +
Noise
THD+N
0.002
0.01
%
V
= 4 V , R = 2 kW, A = +1, f = 1 kHz
pp L V
O
V
O
= 4 V , R = 2 kW, A = +1, f = 10 kHz
pp L V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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6
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range. Guaranteed by design and/or characterization.
Parameter
POWER SUPPLY
Symbol
Conditions
Min
Typ
Max
Unit
Power Supply Rejection Ratio
PSRR
NCx2003, A
72
65
80
80
dB
NCx20032, NCx20034
100
300
Quiescent Current
I
No load, per channel
NCx2003, A
660
1000
450
mA
DD
NCx20032,
NCx20034
325
675
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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7
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
600
500
700
600
500
400
300
200
100
0
+85°C
400
+125°C
V
S
= 5 V
V
S
= 2.7 V
300
200
100
0
+25°C
−40°C
V
S
= 1.8 V
No Load
100
No Load
1
2
3
4
5
−50
−25
0
25
50
75
125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Figure 2. Quiescent Supply Current vs. Supply
Voltage
Figure 3. Quiescent Supply Current vs.
Temperature
1.8
1.6
1.4
1.2
1
20
18
16
14
12
10
8
V
= 5 V
S
+125°C
0.8
0.6
0.4
0.2
0
+85°C
+25°C
+85°C
−40°C
−40°C
6
+125°C
4
+25°C
2
V
S
= 1.8 V
0
0
1
2
3
4
5
0
5
10
15
20
V
CM
, COMMON MODE VOLTAGE (V)
LOW LEVEL OUTPUT CURRENT (mA)
Figure 4. Input Offset Current vs. VCM
Figure 5. Low Level Output Voltage vs. Output
Current @ VS = 1.8 V
0.5
0.4
0.3
0.2
0.1
0
1.8
1.6
1.4
1.2
1
V
= 5 V
V
S
= 1.8 V
S
−40°C
+25°C
+125°C
+85°C
+85°C
0.8
0.6
0.4
0.2
0
−40°C
+125°C
+25°C
0
5
10
15
20
0
−2
−4
−6
−8
−10
LOW LEVEL OUTPUT CURRENT (mA)
Figure 6. Low Level Output Voltage vs. Output
Current @ VS = 5 V
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 7. High Level Output Voltage vs. Output
Current @ VS = 1.8 V
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
5
4.9
4.8
4.7
4.6
4.5
140
V
= 5 V
S
R = 10 kW
T = 25°C
A
L
120
100
80
60
40
20
0
−40°C
+25°C
+85°C
+125°C
V
V
= 1.8 V
= 5 V
S
S
0
−4
−8
−12
−16
−20
10
100
1k
10k
100k
1M
HIGH LEVEL OUTPUT CURRENT (mA)
FREQUENCY (Hz)
Figure 8. High Level Output Voltage vs. Output
Current @ VS = 5 V
Figure 9. PSRR vs. Frequency
100
100
80
60
40
20
0
360
300
240
180
120
60
Gain − 10 kW
R = 10 kW
T = 25°C
A
L
Gain − 2 kW
Phase − 10 kW
Phase − 2 kW
80
60
40
20
0
Gain
Phase
V
= 1.8 V
C = 5 pF
T = 25°C
S
V
V
= 1.8 V
= 5 V
S
L
S
A
−20
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 10. CMRR vs. Frequency
Figure 11. Open Loop Gain and Phase vs.
Frequency @ VS = 1.8 V
80
100
360
Gain − 2 kW
V
= 1.8 V
S
70
60
50
40
30
20
10
0
Gain
Gain − 10 kW
Phase − 2 kW
Phase − 10 kW
R = 10 kW
T = 25°C
A
L
80
60
40
20
0
300
240
180
120
60
Phase
V
= 5 V
C = 5 pF
T = 25°C
S
L
A
−20
0
10
100
1k
10k
100k
1M
10M
100M
0
50
100
150
200
FREQUENCY (Hz)
CAPACITIVE LOAD (pF)
Figure 12. Open Loop Gain and Phase vs.
Frequency @ VS = 5 V
Figure 13. Phase Margin vs. Capacitive Load
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
140
120
100
80
140
Output
Input
V
= 1.8 V
V
= 1.8 V
Output
Input
S
S
R = 2 kW
T = 25°C
A
120 R = 2 kW
L
L
T = 25°C
A
100
80
60
40
20
0
60
40
20
0
−20
−20
−20
−20
0
20
40
60
0
20
40
60
TIME (ms)
TIME (ms)
Figure 14. Inverting Small Signal Transient
Response
Figure 15. Non−Inverting Small Signal
Transient Response
1800
1600
1400
1200
1000
800
1800
1600
1400
1200
1000
800
Output
Input
V
= 1.8 V
Output
Input
S
V
= 1.8 V
S
R = 2 kW
T = 25°C
A
L
R = 2 kW
T = 25°C
A
L
600
600
400
400
200
200
0
0
−200
−200
−20
0
20
40
60
−20
0
20
40
60
TIME (ms)
TIME (ms)
Figure 16. Inverting Large Signal Transient
Response
Figure 17. Non−Inverting Large Signal
Transient Response
100
10
6
5
V
= 5 V
Output
Input
R = 2 kW
S
L
R = 2 kW
T = 25°C
A
A = +1
L
V
T = 25°C
A
f = 1 kHz
4
1
3
0.1
2
V
S
= 1.8 V
0.01
0.001
1
0
V
S
= 5 V
−1
−20
0.0001
0
20
40
60
0.01
0.1
1
10
TIME (ms)
OUTPUT VOLTAGE (Vpp)
Figure 18. Non−Inverting Large Signal
Transient Response
Figure 19. THD+N vs. Output Voltage
www.onsemi.com
10
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
140
1
0.1
R = 2 kW
L
V
V
= 1.8 V
S
A = +1
V
= V /2
120
100
80
60
40
20
0
IN
S
T = 25°C
A
f = 1 kHz
T = 25°C
A
V
S
= 1.8 V
0.01
0.001
V
= 5 V
S
0.0001
10
100
1k
FREQUENCY (Hz)
10k
100k
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 20. THD+N vs. Frequency
Figure 21. Input Voltage Noise vs. Frequency
40
35
30
25
20
15
10
10
V
V
= 1.8 V
S
= V /2
IN
S
1
0.1
0.01
0.001
0.0001
0.00001
5
0
T = 25°C
A
10
100
1k
10k
100k
11
12
13
14
FREQUENCY (Hz)
FALLING EDGE SLEW RATE (V/ms)
Figure 22. Noise Density vs. Frequency
Figure 23. Falling Edge Slew Rate @ Vs = 5 V
45
40
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
Vs = 1.8 V
Vs = 5 V
V
= 5 V
S
T = 25°C
A
35
30
25
20
T = 25°C
A
15
10
5
0
−110
−120
7
8
9
10
100
1K
10K
100K
1M
RISING EDGE SLEW RATE (V/ms)
FREQUENCY (Hz)
Figure 24. Rising Edge Slew Rate @ Vs = 5 V
Figure 25. Channel Separation
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11
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
C
D
0.90
0.25
1.10
0.50
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
0.05
H
SEATING
PLANE
END VIEW
C
10
_
_
SIDE VIEW
2.50
3.00
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
A
−X−
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
5
4
3
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
0.063
0.047
0.020 BSC
0.008
0.063
E
−Y−
DIM
A
b
c
D
E
MIN
0.50
0.17
0.08
1.55
1.15
NOM
0.55
0.22
0.13
1.60
MAX
MIN
MAX
0.024
0.011
0.007
0.065
0.049
H
E
0.60
0.27
0.18
1.65
1.25
0.020
0.007
0.003
0.061
0.045
1
2
b 5 PL
c
1.20
e
M
e
L
0.50 BSC
0.20
1.60
0.08 (0.003)
X Y
0.10
1.55
0.30
1.65
0.004
0.061
0.012
0.065
H
E
RECOMMENDED
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
NOM
−−
MAX
MIN
−−
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
e
1.10
0.15
0.40
0.23
3.10
3.10
b 8 PL
0.05
0.25
0.13
2.90
2.90
0.08
0.002
0.010
0.005
0.114
0.114
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
E
3.00
0.118
e
L
H
E
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
SEATING
PLANE
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
−T−
A
0.038 (0.0015)
L
A1
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
SOLDERING FOOTPRINT*
M
S
S
X
0.25 (0.010)
Z
Y
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
8x K REF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
M
S
S
V
0.10 (0.004)
T U
S
0.20 (0.008) T U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
8
5
4
2X L/2
B
−U−
J
J1
L
1
PIN 1
IDENT
K1
K
S
0.20 (0.008) T U
A
SECTION N−N
−V−
MILLIMETERS
INCHES
MIN
0.114
DIM MIN
MAX
MAX
0.122
0.177
0.043
0.006
0.028
A
B
2.90
4.30
---
3.10
−W−
4.50 0.169
1.10 ---
C
C
0.076 (0.003)
D
0.05
0.50
0.15 0.002
0.70 0.020
F
DETAIL E
SEATING
D
−T−
G
G
J
0.65 BSC
0.026 BSC
PLANE
0.09
0.09
0.19
0.19
0.20 0.004
0.16 0.004
0.30 0.007
0.25 0.007
0.008
0.006
0.012
0.010
J1
K
0.25 (0.010)
N
K1
L
6.40 BSC
0.252 BSC
0
M
M
0
8
8
_
_
_
_
N
F
DETAIL E
www.onsemi.com
16
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
D
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
14
8
7
A3
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
L
DETAIL A
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
13X b
M
M
B
0.25
A
A1
A3
b
D
E
1.35
0.10
0.19
0.35
8.55
3.80
1.75 0.054 0.068
0.25 0.004 0.010
0.25 0.008 0.010
0.49 0.014 0.019
8.75 0.337 0.344
4.00 0.150 0.157
M
S
S
B
0.25
C A
DETAIL A
h
A
X 45
_
e
H
h
L
1.27 BSC
0.050 BSC
6.20 0.228 0.244
0.50 0.010 0.019
1.25 0.016 0.049
5.80
0.25
0.40
0
M
A1
e
M
7
0
7
_
_
_
_
SEATING
PLANE
C
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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