NCS20072DMR2G [ONSEMI]

Operational Amplifier, Railto- Rail Output;
NCS20072DMR2G
型号: NCS20072DMR2G
厂家: ONSEMI    ONSEMI
描述:

Operational Amplifier, Railto- Rail Output

放大器 光电二极管
文件: 总23页 (文件大小:963K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCS20071, NCV20071,  
NCS20072, NCV20072,  
NCS20074, NCV20074  
Operational Amplifier, Rail-  
to-Rail Output, 3 MHz BW  
www.onsemi.com  
The NCx2007x series operational amplifiers provide rail−to−rail  
output operation, 3 MHz bandwidth, and are available in single, dual,  
and quad configurations. Rail−to−rail operation enables the user to  
make optimal use of the entire supply voltage range while taking  
advantage of 3 MHz bandwidth. The NCx2007x can operate on supply  
voltages as low as 2.7 V over the temperature range of −40°C to  
125°C. At a 2.7 V supply, the high bandwidth provides a slew rate of  
2.8 V/ms while only consuming 405 mA of quiescent current per  
channel. The wide supply range allows the NCx2007x to run on  
supply voltages as high as 36 V, making it ideal for a broad range of  
applications. Since this is a CMOS device, high input impedance and  
low bias currents make it ideal for interfacing to a wide variety of  
signal sensors. The NCx2007x devices are available in a variety of  
compact packages. Automotive qualified options are available under  
the NCV prefix.  
5
1
SOT−553  
CASE 463B  
TSOP−5  
CASE 483  
8
1
Micro8]  
SOIC−8  
CASE 751  
CASE 846A  
Features  
14  
Rail−To−Rail Output  
Wide Supply Range: 2.7 V to 36 V  
1
TSSOP−14  
CASE 948G  
Wide Bandwidth: 3 MHz typical at V = 2.7 V  
S
TSSOP−8  
CASE 948S  
High Slew Rate: 2.8 V/ms typical at V = 2.7 V  
Low Supply Current: 405 mA per channel at V = 2.7 V  
S
S
Low Input Bias Current: 5 pA typical  
Wide Temperature Range: −40°C to 125°C  
Available in a variety of packages  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
14  
1
SOIC−14 NB  
CASE 751A  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
Compliant  
section on page 2 of this data sheet.  
Applications  
Current Sensing  
Signal Conditioning  
Automotive  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
End Products  
Notebook Computers  
Portable Instruments  
Power Supplies  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. 11  
NCS20071/D  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
MARKING DIAGRAMS  
Single Channel Configuration  
NCS20071, NCV20071  
5
XXXAYWG  
XXMG  
G
G
1
SOT−553  
TSOP−5  
CASE 463B  
CASE 483  
Dual Channel Configuration  
NCS20072, NCV20072  
8
1
8
K72  
YWW  
A G  
NCS20072  
ALYW  
0072  
AYWG  
G
G
G
1
Micro8]  
SOIC−8  
CASE 751  
TSSOP−8  
CASE 948S  
CASE 846A  
Quad Channel Configuration  
NCS20074, NCV20074  
14  
14  
NCS2  
0074  
NCS20074G  
AWLYWW  
ALYWG  
G
1
1
TSSOP−14  
CASE 948G  
SOIC−14 NB  
CASE 751A  
XXXXX = Specific Device Code  
= Assembly Location  
WL, L = Wafer Lot  
= Year  
A
Y
WW, W = Work Week  
G or G = Pb−Free Package  
(Note: Microdot may be in either location)  
www.onsemi.com  
2
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
Single Channel Configuration  
NCS20071, NCV20071  
IN+  
OUT  
VSS  
1
2
3
5
4
VDD  
IN−  
1
2
3
5
4
VDD  
OUT  
+
VSS  
IN+  
IN−  
SOT23−5  
(TSOP−5)  
SOT553−5  
Quadruple Channel Configuration  
NCS20074, NCV20074  
Dual Channel Configuration  
NCS20072, NCV20072  
OUT 1  
IN− 1  
IN+ 1  
VDD  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
OUT 4  
IN− 4  
IN+ 4  
VSS  
OUT 1  
1
8
+
+
VDD  
2
3
4
7
6
5
OUT 2  
IN− 1  
IN+ 1  
VSS  
+
IN− 2  
IN+ 2  
IN+ 3  
IN− 3  
OUT 3  
IN+ 2  
IN− 2  
+
+
+
OUT 2  
8
Figure 1. Pin Connections  
www.onsemi.com  
3
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ORDERING INFORMATION  
Device  
Configuration  
Automotive  
Marking  
Package  
Shipping  
NCS20071SN2T1G  
(In Development)**  
TBD  
TSOP−5  
(Pb−Free)  
3000 / Tape and Reel  
4000 / Tape and Reel  
3000 / Tape and Reel  
4000 / Tape and Reel  
4000 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
4000 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
No  
NCS20071XV53T2G  
(In Development)**  
TBD  
TBD  
SOT553−5  
(Pb−Free)  
Single  
NCV20071SN2T1G*  
(In Development)**  
TSOP−5  
(Pb−Free)  
Yes  
No  
NCV20071XV53T2G*  
(In Development)**  
TBD  
SOT553−5  
(Pb−Free)  
NCS20072DMR2G  
0072  
Micro8 (MSOP8)  
(Pb−Free)  
NCS20072DR2G  
NCS20072  
K72  
SOIC−8  
(Pb−Free)  
NCS20072DTBR2G  
NCV20072DMR2G*  
NCV20072DR2G*  
NCV20072DTBR2G*  
NCS20074DR2G  
TSSOP−8  
(Pb−Free)  
Dual  
0072  
Micro8 (MSOP8)  
(Pb−Free)  
NCS20072  
K72  
SOIC−8  
(Pb−Free)  
Yes  
TSSOP−8  
(Pb−Free)  
NCS20074  
SOIC−14  
(Pb−Free)  
No  
NCS20074DTBR2G  
NCV20074DR2G*  
NCV20074DTBR2G*  
NCS2  
0074  
TSSOP−14  
(Pb−Free)  
Quad  
NCS20074  
SOIC−14  
(Pb−Free)  
Yes  
NCS2  
0074  
TSSOP−14  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable.  
**Contact local sales office for availability.  
www.onsemi.com  
4
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Limit  
Unit  
V
Supply Voltage (V – V ) (Note 4)  
V
S
40  
DD  
SS  
Input Voltage  
V
CM  
V
SS  
− 0.2 to V + 0.2  
V
DD  
Differential Input Voltage (Note 2)  
Maximum Input Current  
V
V
V
ID  
s
I
IN  
10  
100  
mA  
mA  
mW  
°C  
°C  
°C  
V
Maximum Output Current (Note 3)  
Continuous Total Power Dissipation (Note 4)  
Maximum Junction Temperature  
I
O
P
200  
D
T
150  
J
Storage Temperature Range  
T
STG  
−65 to 150  
260  
Mounting Temperature (Infrared or Convection – 20 sec)  
T
mount  
ESD Capability (Note 5)  
Human Body Model  
Machine Model − NCx20071  
HBM  
MM  
2000  
200  
Machine Model − NCx20072, NCx20074  
Charged Device Model − NCx20071/NCx20072  
Charged Device Model − NCx20074  
MM  
CDM  
CDM  
150  
2000 (C6)  
1000 (C6)  
Latch−Up Current (Note 6)  
I
LU  
100  
mA  
Moisture Sensitivity Level (Note 7)  
MSL  
Level 1  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. Maximum input current must be limited to 10 mA. Series connected resistors of at least 500 W on both inputs may be used to limit the  
maximum input current to 10 mA.  
3. Total power dissipation must be limited to prevent the junction temperature from exceeding the 150°C limit.  
4. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction  
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.  
Shorting output to either VDD or VSS will adversely affect reliability.  
5. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per ANSI/ANSI/ESDA/JEDEC JS-001−2010 (AEC−Q100−002)  
ESD Machine Model tested per JESD22−A115 (AEC−Q100−003)  
ESD Charged Device Model tested per ANSI/ESD S5.3.1−2009 (AEC−Q100−011)  
6. Latch−up Current tested per JEDEC standard: JESD78 (AEC−Q100−004)  
7. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A  
THERMAL INFORMATION  
Single Layer  
Multi−Layer  
Board (Note 8)  
Board (Note 9)  
Parameter  
Symbol  
Package  
SOT23−5 / TSOP5  
SOT553−5  
Unit  
178  
167  
131  
194  
101  
128  
Micro8 / MSOP8  
SOIC−8  
236  
190  
253  
142  
Junction−to−Ambient  
q
°C/W  
JA  
TSSOP−8  
SOIC−14  
TSSOP−14  
179  
2
8. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm copper area  
2
9. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm copper area  
OPERATING RANGES  
Parameter  
Operating Supply Voltage (Single Supply)  
Symbol  
Min  
2.7  
Max  
36  
Unit  
V
V
S
V
S
Operating Supply Voltage (Split Supply)  
Differential Input Voltage (Note 10)  
Input Common Mode Voltage Range  
Ambient Temperature  
1.35  
18  
V
V
ID  
V
S
V
V
CM  
V
SS  
V − 1.35  
DD  
V
T
A
−40  
125  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
10.Maximum input current must be limited to 10 mA. See Absolute Maximum Ratings for more information.  
www.onsemi.com  
5
 
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 2.7 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 11, 12)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
Input Offset Voltage  
V
OS  
+4  
Offset Voltage Drift  
DV /DT  
T = 25°C to 125°C  
2
5
mV/°C  
OS  
A
200  
1500  
75  
Input Bias Current (Note 12)  
I
IB  
pA  
pA  
dB  
2
2
NCx20072  
NCx20074  
500  
75  
Input Offset Current (Note 12)  
Channel Separation  
I
OS  
200  
NCx20072  
NCx20074  
100  
115  
50  
XTLK  
DC  
Differential Input Resistance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
5
1.5  
3.5  
110  
C
pF  
CM  
90  
69  
90  
69  
V
= V + 0.2 V to  
SS  
CM  
V
NCx20072  
NCx20074  
dB  
dB  
− 1.35 V  
DD  
Common Mode Rejection Ratio  
CMRR  
110  
118  
V
= V to V  
CM  
SS  
DD  
1.35 V (Note 13)  
OUTPUT CHARACTERISTICS  
96  
Open Loop Voltage Gain  
A
VOL  
dB  
mA  
V
86  
Op amp sinking current  
Op amp sourcing current  
70  
50  
Output Current Capability (Note 14)  
Output Voltage High  
I
O
0.006  
0.15  
0.22  
0.15  
0.22  
V
OH  
Voltage output swing from positive rail  
Voltage output swing from negative rail  
0.005  
Output Voltage Low  
V
OL  
V
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3
MHz  
V/ms  
°
L
C = 20 pF, R = 2 kW  
2.8  
50  
L
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
0.6  
1.2  
V
= 1 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
11. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
12.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
13.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
14.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
6
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 2.7 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 11, 12)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 0.5 Vpp, f = 1 kHz, Av = 1  
f = 1 kHz  
0.05  
30  
%
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
f = 10 kHz  
20  
Input Referred Current Noise  
i
n
f = 1 kHz  
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
405  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
525  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
625  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
11. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
12.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
13.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
14.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
ELECTRICAL CHARACTERISTICS AT VS = 5 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 15, 16)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125 °C  
2
5
mV/°C  
OS  
A
200  
1500  
75  
Input Bias Current (Note 16)  
Input Offset Current (Note 16)  
Channel Separation  
I
IB  
pA  
pA  
dB  
2
2
NCx20072  
NCx20074  
500  
75  
I
OS  
200  
NCx20072  
NCx20074  
100  
115  
50  
XTLK  
DC  
Differential Input Resistance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
5
1.5  
3.5  
C
pF  
CM  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
15.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
16.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
17.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
18.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
7
 
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 5 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 15, 16)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
125  
125  
Max  
Unit  
INPUT CHARACTERISTICS  
102  
80  
V
= V + 0.2 V to  
SS  
CM  
V
NCx20072  
NCx20074  
dB  
dB  
− 1.35 V  
DD  
Common Mode Rejection Ratio  
CMRR  
102  
80  
V
= V to V  
CM  
SS  
DD  
1.35 V (Note 17)  
OUTPUT CHARACTERISTICS  
96  
120  
Open Loop Voltage Gain  
A
dB  
mA  
V
VOL  
86  
Op amp sinking current  
Op amp sourcing current  
50  
60  
Output Current Capability (Note 18)  
Output Voltage High  
I
O
0.013  
0.20  
0.25  
0.10  
0.15  
V
Voltage output swing from positive rail  
Voltage output swing from negative rail  
OH  
0.01  
Output Voltage Low  
V
V
OL  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3.2  
2.7  
50  
MHz  
V/ms  
°
L
C = 20 pF, R = 2 kW  
L
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
1.2  
5.6  
V
= 3 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 2.5 Vpp, f = 1 kHz, Av = 1  
0.009  
30  
%
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
20  
Input Referred Current Noise  
i
n
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
410  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
530  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
630  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
15.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
16.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
17.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
18.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
8
 
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 10 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 19, 20)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
Input Offset Voltage  
V
OS  
+4  
Offset Voltage Drift  
DV /DT  
T = 25°C to 125°C  
2
5
mV/°C  
OS  
A
200  
1500  
75  
Input Bias Current (Note 20)  
I
IB  
pA  
pA  
dB  
2
2
NCx20072  
NCx20074  
500  
75  
Input Offset Current (Note 20)  
Channel Separation  
I
OS  
200  
NCx20072  
NCx20074  
100  
115  
50  
XTLK  
DC  
Differential Input Resistance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
5
1.5  
3.5  
130  
C
pF  
CM  
110  
87  
V
= V + 0.2 V to  
SS  
CM  
V
NCx20072  
NCx20074  
dB  
dB  
− 1.35 V  
DD  
Common Mode Rejection Ratio  
CMRR  
110  
87  
130  
120  
V
= V to V  
CM  
SS  
DD  
1.35 V (Note 21)  
OUTPUT CHARACTERISTICS  
98  
Open Loop Voltage Gain  
A
VOL  
dB  
mA  
V
88  
Op amp sinking current  
Op amp sourcing current  
50  
65  
Output Current Capability (Note 22)  
Output Voltage High  
I
O
0.023  
0.08  
0.10  
0.3  
V
OH  
Voltage output swing from positive rail  
Voltage output swing from negative rail  
0.022  
Output Voltage Low  
V
OL  
V
0.35  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3.2  
2.2  
50  
MHz  
V/ms  
°
L
C = 20 pF, R = 2 kW  
L
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
3.4  
6.8  
V
= 8.5 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
19.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
20.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
21.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
22.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
9
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 10 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 19, 20)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 7.5 Vpp, f = 1 kHz, Av = 1  
f = 1 kHz  
0.004  
30  
%
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
f = 10 kHz  
20  
Input Referred Current Noise  
i
n
f = 1 kHz  
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
416  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
540  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
640  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
19.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
20.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
21.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
22.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
ELECTRICAL CHARACTERISTICS AT VS = 36 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 23, 24)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125°C  
2
5
mV/°C  
OS  
A
200  
2000  
1500  
75  
NCx20072  
NCx20074  
Input Bias Current (Note 24)  
I
IB  
pA  
2
2
NCx20072  
NCx20074  
1000  
75  
Input Offset Current (Note 24)  
Channel Separation  
I
pA  
dB  
OS  
200  
NCx20072  
NCx20074  
100  
115  
50  
XTLK  
DC  
Differential Input Resistance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
5
1.5  
3.5  
C
pF  
CM  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
23.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
24.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
25.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
26.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
10  
 
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
ELECTRICAL CHARACTERISTICS AT VS = 36 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 23, 24)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
145  
145  
Max  
Unit  
INPUT CHARACTERISTICS  
120  
95  
V
= V + 0.2 V to  
SS  
CM  
V
NCx20072  
NCx20074  
− 1.35 V  
DD  
Common Mode Rejection Ratio  
CMRR  
dB  
120  
95  
V
= V to V  
CM  
SS  
DD  
1.35 V (Note 25)  
OUTPUT CHARACTERISTICS  
98  
120  
Open Loop Voltage Gain  
A
VOL  
dB  
88  
Op amp sinking current  
Op amp sourcing current  
50  
65  
Output Current Capability (Note 26)  
Output Voltage High  
I
mA  
O
0.074  
0.10  
0.15  
0.12  
0.3  
Voltage output swing  
from positive rail  
NCx20072  
NCx20074  
V
OH  
V
V
0.065  
Output Voltage Low  
V
OL  
Voltage output swing from negative rail  
0.35  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3.2  
2.4  
50  
MHz  
V/ms  
°
L
C = 20 pF, R = 2 kW  
L
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
3.2  
6.8  
V
= 10 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 28.5 Vpp, f = 1 kHz, Av = 1  
0.001  
30  
%
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
20  
Input Referred Current Noise  
i
n
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
465  
465  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
570  
700  
600  
700  
NCx20072  
NCx20074  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
23.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
24.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
25.Effective for the NCx20074 until FPCN 20949 is implemented. After the FPCN is implemented, the NCx20074 condition will change to V  
CM  
= V + 0.2 V to V − 1.35 V.  
SS  
DD  
26.Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more infor-  
mation.  
www.onsemi.com  
11  
 
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.7  
0.6  
V
= 36 V  
S
T = 125°C  
T = 85°C  
0.5  
0.4  
0.3  
0.2  
T = 25°C  
V
S
= 2.7 V  
T = −40°C  
V
= 5 V  
S
V
S
= 10 V  
0
6
12  
18  
24  
30  
36  
−40 −20  
0
20  
40  
60  
80  
100 120  
SUPPLY VOLTAGE (V)  
TEMPERATURE (°C)  
Figure 2. Quiescent Current Per Channel vs.  
Supply Voltage  
Figure 3. Quiescent Current vs. Temperature  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1  
5
4
V
=
18 V  
V
= mid−supply  
S
CM  
10 units  
3
2
1
T = −40°C  
0
−1  
−2  
−3  
−4  
−5  
T = 85°C  
T = 25°C  
T = 125°C  
−1.2  
0
6
12  
18  
24  
30  
36  
−18 −14 −10 −6  
−2  
2
6
10  
14 18  
SUPPLY VOLTAGE (V)  
COMMON MODE VOLTAGE (V)  
Figure 4. Offset Voltage vs. Supply Voltage  
Figure 5. Input Offset Voltage vs. Common  
Mode Voltage  
5
2.5  
125  
100  
75  
180  
135  
90  
V
S
V
S
V
S
V
S
= 2.7 V, Gain  
= 36 V, Gain  
= 2.7 V, Phase  
= 36 V, Phase  
V
=
18 V  
S
Normal  
operation  
10 units  
0
GAIN  
−2.5  
−5  
50  
45  
25  
0
R = 10 kW  
C = 15 pF  
L
L
−7.5  
−10  
−12.5  
−15  
0
−45  
−90  
−135  
−180  
−25  
−50  
−75  
PHASE  
15.5  
16  
16.5  
17  
17.5  
18  
18.5  
10  
100  
1k  
10k  
100k  
1M  
10M 100M  
COMMON MODE VOLTAGE (V)  
FREQUENCY (Hz)  
Figure 6. Input Offset Voltage vs. Common  
Mode Voltage  
Figure 7. Gain and Phase vs. Frequency  
www.onsemi.com  
12  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
60  
50  
40  
30  
20  
10  
0
1E+1  
V
= 36 V  
= 1 kHz  
A = 1  
V
S
V
= 5 V  
S
F
IN  
R = 10 kW  
L
1E+0  
1E−1  
1E−2  
1E−3  
1E−4  
T = 25°C  
A
0
100  
200  
300  
400  
500  
0
6
12  
18  
24  
30  
36  
CAPACITIVE LOAD (pF)  
OUTPUT VOLTAGE (Vpp)  
Figure 8. Phase Margin vs. Capacitive Load  
Figure 9. THD+N vs. Output Voltage  
275  
250  
225  
200  
175  
150  
125  
100  
75  
1E+1  
1E+0  
1E−1  
1E−2  
1E−3  
1E−4  
V
V
V
V
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
S
S
S
S
A = 1  
V
V
= 2.7 V  
S
V
= 5 V  
S
V
= 10 V  
= 36 V  
S
V
S
50  
25  
0
10  
10  
100  
1k  
10k  
100  
1k  
10k  
100k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 10. THD+N vs. Frequency  
Figure 11. Input Voltage Noise vs. Frequency  
140  
120  
100  
80  
5
V
S
V
S
V
S
V
S
= 2.7 V, V  
= 5 V, V  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
DD  
SS  
4
3
= 10 V, V  
DD  
SS  
= 36 V V  
2
60  
1
40  
0
20  
0
−1  
10  
100  
1k  
10k  
100k  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 12. Input Current Noise vs. Frequency  
Figure 13. PSRR vs. Frequency  
www.onsemi.com  
13  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
120  
100  
80  
60  
40  
20  
0
1.4  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
T = −40°C  
T = 25°C  
T = 85°C  
T = 125°C  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
R = 10 kW  
T = 25°C  
A
L
V
S
= 36 V  
10  
100  
1k  
10k  
100k  
1M  
0
2
4
6
8
10  
12 14  
16 18 20  
FREQUENCY (Hz)  
OUTPUT CURRENT (mA)  
Figure 14. CMRR vs. Frequency  
Figure 15. High Level Output vs. Output  
Current  
1
0.8  
0.6  
0.4  
0.2  
0
18.1  
18.05  
18  
Input  
Output  
T = −40°C  
T = 25°C  
T = 85°C  
T = 125°C  
V
= 36 V  
S
A = +1  
R = 10 kW  
L
V
17.95  
17.9  
V
S
= 36 V  
0
2
4
6
8
10  
12 14  
16 18 20  
−20  
0
20  
40  
60  
OUTPUT CURRENT (mA)  
TIME (ms)  
Figure 16. Low Level Output vs. Output  
Current  
Figure 17. Non−inverting Small Signal  
Transient Response  
18.075  
18.05  
18.025  
18  
25  
Input  
Output  
20  
15  
10  
V
= 36 V  
S
17.975  
17.95  
17.925  
A = +1  
R = 10 kW  
L
V
V
S
= 36 V  
A = +1  
R = 10 kW  
L
V
Input  
Output  
−20  
0
20  
40  
60  
−20  
0
20  
40  
60  
TIME (ms)  
TIME (ms)  
Figure 18. Inverting Small Signal Transient  
Response  
Figure 19. Non−inverting Large Signal  
Transient Response  
www.onsemi.com  
14  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
24  
22  
20  
18  
16  
14  
12  
10  
1200  
V
S
= 36 V  
1000  
800  
600  
400  
200  
0
I +  
V
= 36 V  
IB  
S
I −  
A = −1  
R = 10 kW  
L
IB  
V
I
OS  
Input  
Output  
−200  
−20  
0
20  
40  
60  
−25  
0
25  
50  
75  
100  
125  
TIME (ms)  
TEMPERATURE (°C)  
Figure 20. Inverting Large Signal Transient  
Response  
Figure 21. Input Bias and Offset Current vs.  
Temperature  
50  
40  
0.1 Hz to 10 Hz noise  
V
S
= 36 V  
V
S
=
18 V, V = V /2  
CM S  
I +  
IB  
R = 10 kW, C = 100 pF  
30  
L
L
I −  
IB  
A = −1, V = 0 V  
V
IN  
I
OS  
20  
10  
0
−10  
−20  
−30  
−40  
−50  
0
6
12  
18  
24  
30  
36  
0
1
2
3
4
5
6
7
8
9
10  
COMMON MODE VOLTAGE (V)  
TIME (s)  
Figure 22. Input Bias Current vs. Common  
Mode Voltage  
Figure 23. 0.1 Hz to 10 Hz Noise  
0
500  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
R = 10 kW  
C = 25 pF  
L
L
450  
400  
350  
300  
250  
200  
150  
100  
50  
−20  
−40  
−60  
−80  
−100  
−120  
−140  
−160  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
0
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 24. Channel Separation vs. Frequency  
Figure 25. Open Loop Output Impedance  
www.onsemi.com  
15  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
1000  
500  
10  
V
= 36 V  
S
V
= 36 V  
S
8
6
10 V step  
A = −1  
5 Units  
= mid−supply  
V
V
CM  
0
4
2
12−bit Setting  
−500  
−1000  
−1500  
−2000  
−2500  
0
1/2LSB = 0.024%  
−2  
−4  
−6  
−8  
−10  
−50  
−25  
0
25  
50  
75  
100  
125  
0
5
10  
15  
20 25 30 35 40  
45 50  
TEMPERATURE (°C)  
TIME (ms)  
Figure 26. Offset Voltage vs. Temperature  
Figure 27. Large Signal Settling Time  
5
4
3
2
1
0
SR+  
SR−  
V
S
= 36 V  
−40 −20  
0
20  
40  
60  
80  
100 120  
TEMPERATURE (°C)  
Figure 28. Slew Rate vs. Temperature  
www.onsemi.com  
16  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
SOT−553, 5 LEAD  
CASE 463B  
ISSUE C  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
A
−X−  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
L
5
4
3
MILLIMETERS  
INCHES  
NOM  
0.022  
0.009  
0.005  
0.063  
0.047  
0.020 BSC  
0.008  
0.063  
E
−Y−  
DIM  
A
b
c
D
E
MIN  
0.50  
0.17  
0.08  
1.55  
1.15  
NOM  
0.55  
0.22  
0.13  
1.60  
MAX  
MIN  
MAX  
0.024  
0.011  
0.007  
0.065  
0.049  
H
E
0.60  
0.27  
0.18  
1.65  
1.25  
0.020  
0.007  
0.003  
0.061  
0.045  
1
2
b 5 PL  
c
1.20  
e
M
e
L
0.50 BSC  
0.20  
1.60  
0.08 (0.003)  
X Y  
0.10  
1.55  
0.30  
1.65  
0.004  
0.061  
0.012  
0.065  
H
E
RECOMMENDED  
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
17  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
TSOP−5  
CASE 483−02  
ISSUE K  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
NOTE 5  
5X  
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE  
MINIMUM THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT  
EXCEED 0.15 PER SIDE. DIMENSION A.  
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL  
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.  
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2  
FROM BODY.  
0.20 C A B  
2X  
0.10  
T
M
5
4
3
2X  
0.20  
T
B
S
1
2
K
B
A
DETAIL Z  
G
A
MILLIMETERS  
TOP VIEW  
DIM  
A
B
MIN  
3.00 BSC  
1.50 BSC  
MAX  
DETAIL Z  
C
D
0.90  
0.25  
1.10  
0.50  
J
G
H
J
K
M
S
0.95 BSC  
C
0.01  
0.10  
0.20  
0
0.10  
0.26  
0.60  
0.05  
H
SEATING  
PLANE  
END VIEW  
C
10  
_
_
SIDE VIEW  
2.50  
3.00  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
18  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
Micro8t  
CASE 846A−02  
ISSUE J  
D
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE  
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.  
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.  
H
E
E
MILLIMETERS  
INCHES  
NOM  
−−  
0.003  
0.013  
0.007  
0.118  
DIM  
A
A1  
b
c
D
MIN  
−−  
NOM  
−−  
MAX  
MIN  
−−  
MAX  
0.043  
0.006  
0.016  
0.009  
0.122  
0.122  
PIN 1 ID  
e
1.10  
0.15  
0.40  
0.23  
3.10  
3.10  
b 8 PL  
0.05  
0.25  
0.13  
2.90  
2.90  
0.08  
0.002  
0.010  
0.005  
0.114  
0.114  
0.33  
M
S
S
0.08 (0.003)  
T B  
A
0.18  
3.00  
E
3.00  
0.118  
e
L
H
E
0.65 BSC  
0.55  
4.90  
0.026 BSC  
0.021  
0.193  
SEATING  
PLANE  
0.40  
4.75  
0.70  
5.05  
0.016  
0.187  
0.028  
0.199  
−T−  
A
0.038 (0.0015)  
L
A1  
c
RECOMMENDED  
SOLDERING FOOTPRINT*  
8X  
8X  
0.48  
0.80  
5.25  
0.65  
PITCH  
DIMENSION: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
19  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
SOIC−8 NB  
CASE 751−07  
ISSUE AK  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
−X−  
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW  
STANDARD IS 751−07.  
S
M
M
B
0.25 (0.010)  
Y
1
K
−Y−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
G
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
1.27 BSC  
0.050 BSC  
−Z−  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
0.10 (0.004)  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
SOLDERING FOOTPRINT*  
1.52  
0.060  
7.0  
4.0  
0.275  
0.155  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
20  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
TSSOP−8  
CASE 948S  
ISSUE C  
8x K REF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
S
0.20 (0.008) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.  
PROTRUSIONS OR GATE BURRS. MOLD FLASH  
OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)  
PER SIDE.  
5. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
6. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE -W-.  
8
5
4
2X L/2  
B
−U−  
J
J1  
L
1
PIN 1  
IDENT  
K1  
K
S
0.20 (0.008) T U  
A
SECTION N−N  
−V−  
MILLIMETERS  
INCHES  
MIN  
DIM MIN  
MAX  
3.10  
4.50  
1.10  
0.15  
0.70  
MAX  
0.122  
0.177  
0.043  
0.006  
0.028  
A
B
2.90  
4.30  
---  
0.114  
0.169  
---  
−W−  
C
C
0.076 (0.003)  
D
0.05  
0.50  
0.002  
0.020  
F
DETAIL E  
SEATING  
D
−T−  
G
G
J
0.65 BSC  
0.026 BSC  
PLANE  
0.09  
0.09  
0.19  
0.19  
0.20  
0.16  
0.30  
0.25  
0.004  
0.004  
0.007  
0.007  
0.008  
0.006  
0.012  
0.010  
J1  
K
0.25 (0.010)  
N
K1  
L
6.40 BSC  
0.252 BSC  
0
M
M
0
8
8
_
_
_
_
N
F
DETAIL E  
www.onsemi.com  
21  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
TSSOP−14  
CASE 948G  
ISSUE B  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
−U−  
L
N
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T U  
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
−V−  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
−T−  
H
G
DETAIL E  
D
PLANE  
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
22  
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074  
PACKAGE DIMENSIONS  
SOIC−14 NB  
CASE 751A−03  
ISSUE L  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
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NCS20071/D  

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