NCS21671DM025R2G [ONSEMI]
Current-Shunt Monitors, Zero-Drift, 40 V Common Mode, Bidirectional, Shutdown;型号: | NCS21671DM025R2G |
厂家: | ONSEMI |
描述: | Current-Shunt Monitors, Zero-Drift, 40 V Common Mode, Bidirectional, Shutdown |
文件: | 总21页 (文件大小:681K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Current-Shunt Monitors,
Zero-Drift, 40 V Common
Mode, Bidirectional,
Shutdown
MARKING
DIAGRAMS
xxxx
AYW
NCS21671, NCV21671
The NCS21671 and NCV21671 are a series of voltage output
current sense amplifiers offered in gains of 25, 50, 100, and 200 V/V.
These parts can measure voltage across shunts at common mode
voltages from −0.1 V to 40 V, independent of supply voltage. The low
offset of the zero−drift architecture enables current sensing with
voltage drops across sense resistors as low as 10 mV full−scale. An
optional enable function is available to reduce current drain through
the input pins and power supply pins to negligible levels when
disabled or if Vs is less than 1.5 V. Two optional pins are included to
simplify input filtering. These devices can operate from a single
+1.8 V to +5.5 V power supply, drawing a maximum of 80 mA of
supply current. These parts are available in Micro10 and SC70−6
packages.
Micro10
CASE 846B−03
XXXX = Device Code
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
6
XXXMG
G
1
1
SC−88/SC70−6
/SOT−363
CASE 419B−02
XXX = Specific Device Code
M
= Date Code*
Features
G
= Pb−Free Package
• Wide Common Mode Input Range: −0.1 V to 40 V
• Supply Voltage Range: 1.8 V to 5.5 V
• Low Offset Voltage: ±25 mV max
• Rail−to−Rail Output Capability
(Note: Microdot may be in
either location)
PIN CONNECTIONS
• Low Current Consumption: 80 mA max
• Enable Pin to Turn Off Input and Power Supply Currents
See pin connections on page 2 of this datasheet.
• Optional Input Filtering Through C
and C Pins
IN−
IN+
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
Typical Applications
• Power Bus Monitoring
• Battery Current Monitor
• Lighting Ballast
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2023 − Rev. 0
NCS21671/D
NCS21671, NCV21671
1.8 V to 5.5 V
Supply
Reference
Voltage
R
fb
NCS21671
Enable − HI
EN
Shutdown − LOW
R
R
in
filt
I
LOAD
IN+
+
R
SHUNT
OUT
VOUT
−
IN−
R
R
in
filt
R
fb
C
FILT
V
OUT
= (I
x R ) * GAIN + V
SHUNT REF
LOAD
Figure 1. Example Application Schematic of High−Side Current Sensing
PIN FUNCTION DESCRIPTION
10
1
NC
OUT
GND
REF
EN
C
2
3
4
5
9
8
IN+
IN+
IN−
1
2
3
6
5
OUT
REF
IN−
GND
7
6
IN+
4
V
S
V
S
C
IN−
Micro−10
SC70−6
Figure 2. Pin Function Description
PIN DESCRIPTION
Pin Name
Type
Description
This pin must be left not connected to external circuitry.
NC
No connect
C
Input
Input
Input
Input
Supply
Input
Available on Micro10 packages only. An optional capacitor can be added between C
to create a low−pass input filter.
and C
IN+ IN−
IN+
IN+
This pin is connected to the positive side of the sense resistor or current shunt. This pin becomes
high impedance when the part is in shutdown mode (EN = 0).
IN−
This pin is connected to the negative side of the sense resistor or current shunt. This pin becomes
high impedance when the part is in shutdown mode (EN = 0).
C
Available on Micro10 packages only. An optional capacitor can be added between C
to create a low−pass input filter.
and C
IN+ IN−
IN−
V
This is the positive supply pin that provides power to the internal circuitry. An external bypass
capacitor of 0.1 μF is recommended to be placed as close as possible to this pin.
S
EN
Available on Micro10 packages only. There is no pull−up enable the part when this pin is open
circuit. The enable pin can be connected to V or driven with a logic level to enable the part. If this
S
pin is driven low the part enters a low power mode to conserve current consumption.
REF
Input
This pin sets the reference voltage of the internal difference amplifier circuit, allowing for
unidiretional or bidirectional current sensing. For unidirectional current sensing, connect this pin to
GND. For bidirectional current sensing, connect this pin between the GND and V range.
S
GND
OUT
Supply
Output
This is the negative supply rail of the circuit.
The output pin provides a low impedance voltage output. This pin becomes high impedance when
the part is in shutdown mode (EN = 0).
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2
NCS21671, NCV21671
MAXIMUM RATINGS
Parameter
Symbol
Rating
−0.3 to 6
44
Unit
V
Supply Voltage (Note 1)
V
S
IN+, IN−, CIN+, CIN−
Differential (V ) − (V ) (Note 2)
V V
IN+, IN−
V
IN+
IN−
Common−Mode (Note 2)
−0.3 to +44
REF Input
V
GND−0.3 to (V ) +0.3
V
V
REF
s
EN Input
V
GND−0.3 to (V ) +0.3
s
EN
Output (Note 2)
V
OUT
GND−0.3 to (V ) +0.3
V
s
Input Current into Any Pin (Note 2)
Operating Temperature
I
10
−40 to +150
−65 to +150
+150
mA
°C
°C
°C
V
IN
T
A
Storage Temperature
T
STG
Junction Temperature
T
J(max)
ESD Capability, Human Body Model (Note 3)
Charged Device Model (Note 3)
Latch−up Current (Note 4)
HBM
CDM
2000
1000
V
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 10 mA.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard JS−001−2017
ESD Charged Device Model tested per JEDEC standard JS−002−2014
4. Latch−up Current tested per JEDEC standard JESD78E
THERMAL CHARACTERISTICS
Parameter
Symbol
Micro10 / MSOP10
SC88 / SC70−6 / SOT−363
Unit
°C/W
°C/W
°C/W
°C/W
Junction−to−ambient thermal resistance (Notes 5, 6)
Junction−to−case thermal resistance (Notes 5, 6)
Junction−to−top thermal characterization (Notes 5, 6)
Junction−to−board thermal characterization (Notes 5, 6)
q
180
71
188
128
21
JA
q
JC(top)
Y
Y
1.6
98
JT
91
JB
5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2
2
6. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate. (reference JESD51).
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Conditions
NCS prefix
Min
−40
−40
−0.1
1.8
Max
125
125
40
Unit
Operating Temperature
T
A
°C
NCV prefix
Common Mode Input Voltage
Supply Voltage
V
CM
Full temperature range
Full temperature range
V
V
V
S
5.5
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
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3
NCS21671, NCV21671
ELECTRICAL CHARACTERISTICS
At T = +25°C, V
= (V ) − (V ); V = 1.8 V to 5.5 V, V
= 12 V, and V = V /2, unless otherwise noted. Boldface limits
REF S
A
SENSE
IN+
IN−
S
IN+
apply over the specified temperature range, T = −40 °C to 125 °C.
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT
Common Mode Rejection
Ratio, RTI (Note 7)
CMRR
V
V
= −0.1 V to 40 V,
SENSE
G = 25
G = 50
G = 100
G = 200
G = 25
G = 50
G = 100
G = 200
G = 25
G = 50
G = 100
G = 200
109
109
109
109
−
127
127
134
134
± 9
−
−
dB
IN+
= 0 mV
T = −40 °C to 125 °C
A
−
−
Input Offset Voltage,
RTI (Note 7)
V
OS
V
= 0 mV
19
12
10
10
60
40
25
25
± ±0.
mV
mV
SENSE
−
± 4
−
± 3
−
± 2
V
V
= −0.1 V to 40 V
−
± 1
IN+
SENSE
= 0 mV
−
± 1
−
± 1
−
± 1
Input Offset Voltage Drift vs.
Temperature, RTI (Note 7)
DV / dT
V
= 0 mV
−
± 0.1
mV/°C
mV/V
OS
SENSE
Power Supply Rejection Ratio
PSRR
V = 1.8 V to 5.5 V,
S
−
± 1.0
± ±1
V
V
V
= 0mV
= 0 mV
= 0mV
SENSE
SENSE
SENSE
Input Bias Current
I
−
−
29
35
mA
IB
Input Bias Current in Shutdown
(Note 10)
I
I
−
140
nA
IBSD
Input Bias Current in Shutdown
(Note 10)
T = −40 °C to 125 °C
A
−
−
500
nA
IBSD
Input Offset Current
I
V
= 0 mV
−
1.4
−
± 0.3
−
−
−
mA
IO
SENSE
Enable Input Threshold Voltage
V
Enabled
Disabled
V
th(EN)
−
0.3
−
Enable Input Leakage Current
I
V
EN
V
EN
= V
S
−
3
nA
EN
= GND
−
−3
65
20
−
Enable Time (Note 8)
Shutdown Time (Note 8)
OUTPUT
t
R = 10 kΩ to GND
−
−
μs
μs
ON
L
t
R = 10 kΩ to GND
−
−
OFF
L
Gain
G
G = 25
G = 50
G = 100
G = 200
−
−
−
−
−
−
−
−
−
−
−
−
−
−
25
−
−
V/V
50
100
−
200
−
Gain Error
E
G
V
= −5 mV to + 5 mV, G = 25
−
%
± 0.4
± 0.4
± 0.3
± 0.5
−
SENSE
T = −40°C to 125°C
A
G = 50
−
G = 100
G = 200
−
−
Nonlinearity Error
± 0.01
%
Reference Voltage Rejection
Ratio (Note 10)
RVRR
V
REF
= 100 mV to
G = 25
G = 50
G = 100
G = 200
−
−
−
−
1
27
mV/V
(V – 100 mV)
S
15
T = −40°C to 125°C
A
V
S
= 5.5 V
10
10
Maximum Capacitive Load
C
No sustained oscillation
−
nF
L
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4
NCS21671, NCV21671
ELECTRICAL CHARACTERISTICS
At T = +25°C, V
= (V ) − (V ); V = 1.8 V to 5.5 V, V
= 12 V, and V = V /2, unless otherwise noted. Boldface limits
REF S
A
SENSE
IN+
IN−
S
IN+
apply over the specified temperature range, T = −40 °C to 125 °C.
A
Parameter
VOLTAGE OUTPUT
Swing to VS Supply Rail
Symbol
Conditions
Min
Typ
Max
Unit
V
OH
R = 10 kW to GND
−
−
V
−20
V −35
S
mV
mV
L
A
S
T = −40°C to +125°C
Swing to GND
V
OL
R = 10 kW to GND
1
2.5
L
T = −40°C to +125°C
A
FREQUENCY RESPONSE
Bandwidth (f
)
BW
C = 10pF
G = 25
G = 50
G = 100
G = 200
−
−
−
−
−
−
40
40
35
20
0.3
30
−
−
−
−
−
−
kHz
−3dB
L
Slew Rate
SR
V = 5.5 V
S
V/μs
μs
Settling Time
T
e
From current step to within 1% of final
value
S
NOISE
Voltage Noise Density,
RTI (Note 7)
G = 25
G = 50
G = 100
G = 200
−
−
−
−
56
46
46
46
−
−
−
−
nV/√Hz
n
POWER SUPPLY
Quiescent Current
IQ
V
V
V
= 0 mV
= 0 mV
= 0 mV
−
−
−
45
0.2
40
80
0.5
−
μA
μA
μs
SENSE
SENSE
SENSE
Quiescent Current in Shutdown
Power−on Time (Note 9)
I
t
QSD
PON
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
7. Referred to input.
8. Shutdown Time (t
) and Enable Time (t ) are defined as the time between the 50% point of the signal applied to the EN pin and the point at which the output
OFF
ON
voltage reaches within 10% of its final value. V
= (0.75 * V − V
) / Gain.
SENSE
S
REF
9. Time between V is application and Vout reaching 10% of final value.
S
10. Guaranteed by characterization and/or design.
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
= V /2, V
=12 V, and all
A
SENSE
IN+
IN−
S
EN
REF
S
CM
gains unless otherwise noted.)
Input Offset (μV)
Input Offset (μV)
Figure 3a. Input Offset Voltage Distribution,
G25
Figure 3b. Input Offset Voltage Distribution,
G50
Input Offset (μV)
Input Offset (μV)
Figure 3d. Input Offset Voltage Distribution,
G200
Figure 3c. Input Offset Voltage Distribution,
G100
VOS vs. Temperature
50
40
30
20
10
0
−10
−20
−30
−40
−50
−50 −25
0
25
50
75
100
125
150
Temperature (°C)
CMRR (μV/V)
Figure 5a. Common Mode Rejection Ratio
Distribution, G25
Figure 5. Input Offset vs. Temperature, G100
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ); V = V = 1.8 V, V
= V /2, V
=12 V, and all
A
SENSE
IN+
IN−
S
EN
REF
S
CM
gains unless otherwise noted.) (continued)
CMRR (μV/V)
CMRR (μV/V)
Figure 5b. Common Mode Rejection Ratio
Distribution, G50
Figure 5c. Common Mode Rejection Ratio
Distribution, G100
CMRR vs. Temperature
2
1.5
1
0.5
0
−0.5
−1
−1.5
−2
−50
−25
0
25
50
75
100
125
150
Temperture (°C)
CMRR (μV/V)
Figure 5d. Common Mode Rejection Ratio
Distribution, G200
Figure 6. Common Mode Rejection Ratio vs
Temperature, G100
Gain Error (%)
Gain Error (%)
Figure 7b. Gain Error Distribution, G50
Figure 7a. Gain Error Distribution, G25
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
= V /2, V
=12 V, and all
A
SENSE
IN+
IN−
S
EN
REF
S
CM
gains unless otherwise noted.) (continued)
Gain Error (%)
Gain Error (%)
Figure 7c. Gain Error Distribution, G100
Figure 7d. Gain Error Distribution, G200
Giant Error vs. Temperature
VOS vs. VCM
50
40
0.6
0.5
Vs = 1.8 V
Vs = 5 V
−40
0
25
30
85
125
20
0.4
0.3
0.2
10
0
−10
−20
−30
−40
−50
0.1
0
−5
0
5
10
15
20
25
30
35
40
−50
−25
0
25
50
75
100
125
150
Common Mode Voltage (V)
Temperature (°C)
Figure 9. Zero VIN Output vs Common Mode
Voltage, G100
Figure 8. Gain Error vs Temperature, G100
CMRR vs. Frequency
PSRR vs. Frequency
140
140
120
100
80
Vs = 1.8 V
Vs = 5 V
120
100
80
Vs = 1.8 V
Vs = 5 V
60
60
40
40
20
20
0
0
−20
−20
10
100
1k
10k
100k
1M
10M
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
Figure 10. Common Mode Rejection Ratio vs
Frequency, G100
Figure 11. Power Supply Rejection Ratio vs
Frequency, G100
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
= V /2, V =12 V, and all
CM
A
SENSE
IN+
IN−
S
EN
REF
S
gains unless otherwise noted.) (continued)
Bandwidth vs. Frequency
Output Impedance
50
40
10k
1k
30
20
100
10
0
10
1
−10
−20
−30
−40
−50
G200
G100
G50
G25
G50
G100
G200
0.1
G25
0.01
10
100
1k
10k
100k
1M
10M
10M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 12. Gain vs Frequency
Figure 13. Output Impedance vs Frequency
2.5
1.5
80
60
Source −40C
Source 25C
Source 125C
Sink −40C
Sink 25C
0.5
40
20
0
Sink 125C
−0.5
−40
25C
125C
−1.5
−20
−2.5
0
5
10
15
20
25
30
35
40
40
45
50
0
5
10
15
20
25
30
35
Common Mode Voltage (V)
Output Current (mA)
Figure 14. Output Voltage Swing vs Current
Figure 15. Input Bias Current vs Common
Mode Voltage (Enabled)
10
8
0.6
−40°C
0°C
25°C
85°C
100°C
125°C
VS = 1.8 V
VS = 5 V
0.5
0.4
0.3
0.2
0.1
6
4
2
0
0
−2
−4
−0.1
−0.2
−10
0
10
20
30
40
50
0
30
10
20
40
Common Mode Voltage (V)
Temperature (°C)
Figure 17. Quiescent Current vs Common
Mode Voltage (Enabled)
Figure 16. Input Bias Current vs Common Mode
Voltage (VS open circuit)
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
= V /2, V
=12 V, and all
A
SENSE
IN+
IN−
S
EN
REF
S
CM
gains unless otherwise noted.) (continued)
Inout Voltage Noise Density
10k
10
8
VS = 1.8 V
VS = 5 V
6
1k
100
10
4
2
0
−2
−4
−10
0
10
20
30
40
50
10
100
1k
10k
100k
1M
Frequency (Hz)
Common Mode Voltage (V)
Figure 18. Quiescent Current vs Common Mode
Voltage (Disabled)
Figure 19. Voltage Noise Density
(Referred−to−Input)
300
250
200
150
100
50
0.01
2.7
Input (V)
Output (V)
2.6
2.5
2.4
2.3
0.005
0
0
−0.005
−0.01
−50
−100
−150
0
2
4
6
8
10
0
20
40
60
80
100
Time (s)
Time (ms)
Figure 20. 0.1−Hz to 10−Hz Voltage Noise
(Referred−To−Input)
Figure 21. Step Response, G25 (10mV Input)
0.01
0.005
0
5
50
40
30
20
10
0
2.64
2.6
Input (V)
Output (V)
4.6
4.2
3.8
3.4
3.2
2
2.56
2.52
2.2
1.8
1.4
1
−0.005
−0.01
2.48
VCM
VOUT
2.44
0
20
40
60
80
100
0
10
20
30
40
50
60
Time (ms)
Time (ms)
Figure 23a. Common Mode Voltage Step
Figure 22. Step Response, G200 (10mV Input)
Rising, G100 (10ms)
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NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
otherwise noted.) (continued)
= V /2, V
=12 V, and all gains unless
A
SENSE
IN+
IN−
S
EN
REF
S
CM
50
50
40
30
20
10
0
2.58
2.54
VCM
VOUT
40
2.56
2.54
2.52
2.5
2.532
30
2.524
20
10
0
2.516
2.508
2.5
VCM
VOUT
2.48
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
Time (ms)
Time (ms)
Figure 23b. Common Mode Voltage Step
Figure 23c. Common Mode Voltage Step
Rising, G100 (100ms)
Falling, G100 (10ms)
50
40
30
20
10
0
2.58
2.56
2.54
2.52
2.5
120
100
80
60
40
20
0
VCM
VOUT
1 kHz
10 kHz
100 kHz
2.48
0
5
10
15
20
25
30
35
40
0
20
40
60
80 100 120 140 160 180 200
VCM (V)
Time (ms)
Figure 24a. Common Mode Rejection Ratio
vs Common mode Voltage, G25
Figure 23d. Common Mode Voltage Step
Falling, G100 (100ms)
140
120
100
80
140
120
100
80
60
60
40
40
1 kHz
10 kHz
100 kHz
1 kHz
10 kHz
100 kHz
20
20
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
VCM (V)
VCM (V)
Figure 24b. Common Mode Rejection Ratio
vs Common mode Voltage, G50
Figure 24c. Common Mode Rejection Ratio
vs Common mode Voltage, G100
www.onsemi.com
11
NCS21671, NCV21671
TYPICAL CHARACTERISTICS (At T = +25°C, V
= (V ) – (V ).; V = V = 1.8 V, V
= V /2, V =12 V, and all gains unless otherwise noted.)
CM
A
SENSE
IN+
IN−
S
EN
REF
S
(continued)
6
5
4
3
2
1
0
5
140
120
Vin (V)
Vout (V)
4.5
4
3.5
3
100
80
2.5
2
60
1.5
1
40
20
0
0,5
0
1 kHz
10 kHz
100 kHz
− 0.5
−1
0
50
100
150
200
0
5
10
15
20
25
30
35
40
Time (ms)
VCM (V)
Figure 24d. Common Mode Rejection Ratio
vs Common mode Voltage, G200
Figure 25a. Positive Differential Input
Overload, G100
6
5
4
3
2
1
6
5
4
3
2
1
0
5
4.5
4
3
Vin (V)
Vout (V)
VS
VOUT
3.5
3
2
2.5
2
1
1.5
1
0.5
0
0
− 0.5
− 1
0
−50
−1
0
50
100
0
100
200
Time (ms)
Time (ms)
Figure 25b. Negative Differential Input
Overload, G100
Figure 26a. VS Power Startup
6
5
4
3
2
1
0
6
5
4
3
2
1
0
6
5
4
3
2
1
6
5
4
3
2
1
0
Series 1
Series 2
VS
VOUT
0
0
50
100
150
0
5
10
15
20
Time (ms)
Time (ms)
Figure 26b. VS Power Shutdown
Figure 27a. Enable Startup
www.onsemi.com
12
NCS21671, NCV21671
6
5
4
3
2
1
0
6
Series 1
Series 2
5
4
3
2
1
0
0
2
4
6
8
10
Time (ms)
Figure 27b. Enable Shutdown
APPLICATION INFORMATION
Current Sensing Techniques
pin is connected to the mid−supply voltage for bidirectional
The NCS21671 and NCV21671 are current sense
amplifiers featuring a wide common mode voltage range
that spans from −0.1 V to 40 V independent of the supply
voltage. These amplifiers can be configured for low−side
and high−side current sensing.
At first glance, low−side sensing appears to have the
advantage of being straightforward, inexpensive, and the
ability to be implemented with a simple op amp circuit.
However, the NCS21671 provides the full differential input
necessary to get accurate shunt connections while also
providing a built−in gain network with precision difficult to
obtain with external resistors.
While at times the application requires low−side sensing,
only high−side sensing can detect a short from the positive
supply line to ground. Furthermore, high−side sensing
avoids adding resistance to the ground path of the load being
measured.
monitoring.
Enable Pin
The enable pin can be used to shut down the part and
reduce current consumption. When the part is shut down,
quiescent current drops to less than 1 mA and the inputs
become high impedance. The output also becomes high
impedance in the shutdown mode.
Input Filtering
Some applications may require filtering at the input of the
current sense amplifier. Input filtering is simplified with the
CIN+ and CIN− pins. Simply add an external capacitor
across the pins to set the cutoff frequency, f .
c
1
fc +
(eq. 1)
2p(2RFilt)CFilt
Table 1. Internal Resistance Values
Bidirectional Operation
The NCS21671 can be configured to monitor
unidirectional or bidirectional current flow.
Gain (V/V)
R
(kW)
R
(kW)
R (MW)
fb
filt
in
25
50
20
20
1
1
1
1
In unidirectional current sensing, the measured load
current always flows in the same direction. Common
applications for unidirectional operation include power
supplies and load current monitoring. The NCS21671 can be
set up for unidirectional monitoring by connecting the REF
pin to ground. In this configuration, the IN+ pin should be
connected to the high side of the sense resistor, while the IN−
pin should be connected to the low side of the sense resistor.
Bidirectional current sensing measures current flow in
both directions. A common application for bidirectional
current sensing is battery monitoring. While the battery is
charging, current flows in one direction; while the battery is
being used, current flows in the other direction. For
bidirectional current flow, the REF pin can be connected to a
voltage between GND and the Vs supply. Typically, the REF
10
5
10
5
100
200
2.5
2.5
The internal filter resistance has a tolerance of 25%.
If the filtering capacitor is not used, Cin+ and Cin− pins
should be left floating.
As shunt resistors decrease in value, shunt inductance can
significantly affect frequency response. At values below
1 mW, the shunt inductance causes a zero in the transfer
function that often results in corner frequencies in the low
100’s of kHz. This inductance increases the amplitude of
high frequency spike transient events on the current sensing
www.onsemi.com
13
NCS21671, NCV21671
line that can overload the front end of any shunt current
sensing IC.
For the most accurate measurements, use four terminal
current sense resistors. It provides two terminals for the
current path in the application circuit, and a second pair for
the voltage detection path of the sense amplifier. This
technique is also known as Kelvin Sensing. This ensures that
the voltage measured by the sense amplifier is the actual
voltage across the resistor and does not include the small
resistance of a combined connection. When using
non−Kelvin shunts, follow manufacturer recommendations
on how to lay out the sensing traces closely.
This problem must be solved by filtering at the input of the
amplifier. Note that all current sensing ICs are vulnerable to
this problem, regardless of manufacturer claims. Filtering is
required at the input of the device to resolve this problem,
even if the spike frequencies are above the rated bandwidth
of the device.
Ideally, select the capacitor to exactly match the time
constant of the shunt resistor and its inductance;
alternatively, select the capacitor to provide a pole below
that point. Make the input filter time constant equal to or
larger than the shunt and its inductance time constant:
Gain Options
The gain is set by integrated, precision, ratio−matched
resistors. The NCS21671 is available in gain options of
25 V/V, 50 V/V, 100 V/V, and 200 V/V. Adding external
resistors to adjust the gain can contribute to the overall
system error and is not recommended.
LSHUNT
RSHUNT
v RFILTCFILT
(eq. 2)
Selecting the Shunt Resistor
.
.
PD ≈ Vin(IGND@Iout) ) Iout(Vin * Vout
)
The desired accuracy of the current measurement
determines the precision, shunt size, and the resistor value.
The larger the resistor value, the more accurate the
measurement possible, but a large resistor value also results
in greater current loss.
(eq. 3)
PD(MAX) ) (Vout @ Iout
)
Vin(MAX)
≈
(eq. 4)
I
out ) IGND
ORDERING INFORMATION
†
Device
Channels
Package
Gain
OPN
Marking
Shipping
INDUSTRIAL AND CONSUMER
Filter
Pins
Package
GAIN
25
Enable
Part Number
Marking
AAC(M)
\A/(YW)
\A/(YW)
R(YW)
G025
Shipping
SC70−6
No
No
NCS21671SQ025T2G
NCS21671SQ050T2G
NCS21671SQ100T2G
NCS21671SQ200T2G
NCS21671DM025R2G
NCS21671DM050R2G
NCS21671DM100R2G
NCS21671DM200R2G
Tape and Reel
3000 / Reel
50
100
200
25
Micro10
Yes
Yes
Tape and Reel
4000 / Reel
50
G050
100
200
G100
G200
AUTOMOTIVE GRADE1 QUALIFIED
Filter
Pins
Package
GAIN
25
Enable
Part Number
Marking
AAC(M)
\A/(YW)
\A/(YW)
R(YW)
G025
Shipping
SC70−6
No
No
NCV21671SQ025T2G
NCV21671SQ050T2G
NCV21671SQ100T2G
NCV21671SQ200T2G
NCV21671DM025R2G
NCV21671DM050R2G
NCV21671DM100R2G
NCV21671DM200R2G
Tape and Reel
3000 / Reel
50
100
200
25
Micro10
Yes
Yes
Tape and Reel
4000 / Reel
50
G050
100
200
G100
G200
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
14
NCS21671, NCV21671
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa C
2X
2X 3 TIPS
bbb H D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
www.onsemi.com
15
NCS21671, NCV21671
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
www.onsemi.com
16
NCS21671, NCV21671
Micro10
CASE 846B−03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
−A−
4. DIMENSION “B” DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846B−01 OBSOLETE. NEW STANDARD
846B−02
−B−
K
G
MILLIMETERS
INCHES
PIN 1 ID
D 8 PL
DIM MIN
MAX
3.10
3.10
MIN
MAX
0.122
0.122
0.043
0.012
M
S
S
A
0.08 (0.003)
T B
A
B
C
D
G
H
J
2.90
2.90
0.95
0.20
0.114
0.114
1.10 0.037
0.30 0.008
0.50 BSC
0.020 BSC
0.05
0.10
4.75
0.40
0.15 0.002
0.21 0.004
5.05 0.187
0.70 0.016
0.006
0.008
0.199
0.028
K
L
C
0.038 (0.0015)
−T−
SEATING
PLANE
L
H
J
SOLDERING FOOTPRINT
1.04
0.041
0.32
0.0126
10X
10X
3.20
4.24
5.28
0.126
0.167 0.208
0.50
mm
inches
ǒ
Ǔ
8X0.0196
SCALE 8:1
Micro10
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXMG
6X
0.66
G
1
2.50
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
Micro10
CASE 846B−03
ISSUE D
DATE 07 DEC 2004
SCALE 2:1
NOTES:
−A−
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. DIMENSION “B” DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846B−01 OBSOLETE. NEW STANDARD
846B−02
−B−
K
G
PIN 1 ID
D 8 PL
M
S
S
A
0.08 (0.003)
T B
MILLIMETERS
INCHES
DIM MIN
MAX
3.10
3.10
1.10
0.30
MIN
MAX
0.122
0.122
0.043
0.012
C
0.038 (0.0015)
A
B
C
D
G
H
J
2.90
2.90
0.95
0.20
0.114
0.114
0.037
0.008
−T−
SEATING
PLANE
L
H
J
0.50 BSC
0.020 BSC
0.05
0.10
4.75
0.40
0.15
0.21
5.05
0.70
0.002
0.004
0.187
0.016
0.006
0.008
0.199
0.028
SOLDERING FOOTPRINT
K
L
1.04
0.041
0.32
0.0126
10X
10X
GENERIC
MARKING DIAGRAM*
xxxx
AYW
3.20
0.126
4.24
0.167 0.208
5.28
xxxx
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
A
Y
W
G
0.50
mm
inches
ǒ
Ǔ
8X0.0196
SCALE 8:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Micro10
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON03799D
Micro10
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2000
www.onsemi.com
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