NCS21804 [ONSEMI]
Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz;型号: | NCS21804 |
厂家: | ONSEMI |
描述: | Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz |
文件: | 总13页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Precision Operational
Amplifier, 10 mV, Zero-Drift,
1.6 V to 5.5 V Supply,
1.5 MHz
Product Preview
www.onsemi.com
NCS21801, NCS21802,
NCS21803, NCS21804
The NCS21801, NCS21802, NCS21803, and NCS21804 are
precision op amps featuring low input offset voltage and low offset
drift over time and temperature. The common mode voltage range
extends 100 mV beyond the supply rails, which makes it suitable for
both high−side and low−side current sensing applications.
The NCS2180x is available in single, dual, and quad channel
configurations. All versions are specified for operation from −40°C to
+125°C. NCV prefix parts are automotive grade 1 qualified and offer
performance over the extended temperature range from −40°C to
+150°C.
5
5
1
1
SC−88A / SC70−5
CASE 419A−02
TSOP−5
CASE 483
1
1
SC−88 / SC70−6
CASE 419B−02
UDFN8
CASE 517AW
Features
• Input Offset Voltage: 10 mV max
14
• Offset Voltage Drift Over Temperature: 5 nV/°C
• Common Mode Input Voltage Range: V – 0.1 V to V + 0.1 V
SS
DD
1
Micro8
CASE 846A−02
TSSOP−14 WB
CASE 948G
• Supply Voltage Range: 1.8 V to 5.5 V
• Extended Supply Voltage Range: 1.6 V to 5.5 V for T = 0°C to 85°C
A
• Unity Gain Bandwidth: 1.5 MHz
• Quiescent Consumption: 95 mA max
• Enable Function available on NCS21803
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
PIN CONNECTIONS
See pin connections on page 3 of this data sheet.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• High−Side Current Sensing
• Low−Side Current Sensing
• Difference Amplifier
• Instrumentation Amplifier
• Power Management
• Automotive
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2020 − Rev. P1
NCS21801/D
NCS21801, NCS21802, NCS21803, NCS21804
DEVICE MARKING INFORMATION
6
XXAYWG
XXMG
XXMG
G
G
G
1
TSOP−5
CASE 483
SC−88A / SC70−5
CASE 419A−02
SC−88 / SC70−6 / SOT−363
CASE 419B−02
14
8
XX
AYWG
G
XX
XX
YM
ALYWG
G
1
1
1
UDFN8, 2x2, 0.5P
CASE 517AW
Micro8
CASE 846A−02
TSSOP−14 WB
CASE 948G
XX
A
Y
= Specific Device Code
= Assembly Location
= Year
W
M
= Work Week
= Date Code
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Channels
Enable
Package
Part Number
Marking
Shipping
Industrial and Consumer
Single
No
SOT23−5 / TSOP−5
SC70−5 / SC−88−5 / SOT−353−5
SC−88 / SC70−6 / SOT−363
UDFN−8
NCS21801
NCS21801
3000 / Tape & Reel
Yes
No
NCS21803
Dual
NCS21802MUTBG
NCS21802DMR2G
NCS21804
3000 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
Micro8
Quad
No
TSSOP−14
Automotive Qualified
Single
No
SOT23−5 / TSOP−5
SC70−5 / SC−88−5 / SOT−353−5
Micro8
NCV21801
NCV21801
3000 / Tape & Reel
Dual
No
No
NCV21802DMR2G
NCV21804
4000 / Tape & Reel
2500 / Tape & Reel
Quad
TSSOP−14
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NCS21801, NCS21802, NCS21803, NCS21804
PIN CONNECTIONS
Single Channel Configuration
NCS21801
Single Channel with Enable Configuration
NCS21803
1
5
4
1
2
3
6
5
4
OUT
VSS
IN+
IN+
VSS
IN−
VDD
OUT
IN+
VSS
IN−
VDD
EN
1
2
3
VDD
5
2
3
OUT
4
IN−
SC70−5 / SC−88−5 / SOT−353−5
SC88 / SC70−6 / SOT−363
SOT23−5 / TSOP−5
Dual Channel Configuration
NCS21802
Quad Channel Configuration
NCS21804
1
OUT 1
IN− 1
IN+ 1
VDD
14
13
12
11
10
9
OUT 4
IN− 4
IN+ 4
OUT 1
IN− 1
IN+ 1
VSS
1
2
3
4
8
7
6
5
VDD
2
−
−
−
OUT 2
IN− 2
IN+ 2
+
+
+
3
4
5
6
7
−
+
VSS
IN+ 3
IN− 3
OUT 3
IN+ 2
IN− 2
+
+
UDFN8 / Micro8
−
−
8
OUT 2
TSSOP−14
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3
NCS21801, NCS21802, NCS21803, NCS21804
MAXIMUM RATINGS
Parameter
Symbol
Rating
−0.3 to 6
(V − 0.3) to (V + 0.3)
Unit
V
Supply Voltage (Note 1)
V
S
Input Voltage
V
V
V
V
IN+, IN−, EN
SS
DD
Differential Input Voltage
V
V
(V – V + 0.3)
V
IN+, IN−
DD
SS
Output Voltage (Note 2)
V
(V − 0.3) to (V + 0.3)
V
OUT
OUT
SS
DD
Output Short Circuit Current (Note 3)
Input Current into Any Pin (Note 2)
Maximum Junction Temperature
Storage Temperature Range
I
Continuous
I
10
+150
mA
°C
°C
V
IN
T
J(max)
T
STG
−65 to +150
2000
ESD
Human Body Model (Note 3)
HBM
Charged Device Model (Note 3)
CDM
1000
V
Latch−up Current (Note 4)
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters
2. Input terminals are diode−clamped to the power−supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should
be current limited to 10 mA or less
3. Short circuit current to ground.
4. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard JS−001−2017 (AEC−Q100−002)
ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011)
5. Latch−up Current tested per JEDEC standard: JESD78E.
THERMAL CHARACTERISTICS
Parameter
Symbol
Package
TSOP−5 / SOT23−5
SC70−5 / SC−88−5 / SOT−353−5
SC−88 / SC70−6 / SOT−363
UDFN8
Value
TBD
TBD
TBD
TBD
TBD
TBD
Unit
Thermal Resistance,
Junction−to−Air
(Notes 6, 7)
q
°C/W
JA
Micro8 / MSOP−8
TSSOP−14
6. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters
2
2
7. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate
RECOMMENDED OPERATING RANGES
Parameter
Ambient Temperature
Symbol
Conditions
NCS prefix
Min
−40
−40
Max
125
150
Unit
T
A
°C
NCV prefix
Common Mode Input Voltage
Supply Voltage
V
Full temperature range
V
SS
– 0.1
V + 0.1
DD
V
V
CM
V
T = 0 to 85°C
A
1.6
1.8
5.5
5.5
S
Full temperature range
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
4
NCS21801, NCS21802, NCS21803, NCS21804
ELECTRICAL CHARACTERISTICS
At T = +25°C, V = 3.3 V, and V
= V
= mid−supply, unless otherwise noted. Boldface limits apply over the specified
A
S
CM
OUT
temperature range, unless otherwise noted, guaranteed by characterization and/or design.
Parameter
Symbol
Conditions
Temp (°C)
Min
Typ
Max
Unit
Input
Common Mode Rejection
Ratio
CMRR
V
= V − 0.1 to V
DD
25
113
110
90
TBD
dB
CM
+ 0.1
SS
–40 to 125
–40 to 150
25
Input Offset Voltage
V
OS
10
50
mV
Input Offset Voltage Drift
vs. Temperature
dV /dT
OS
–40 to 125
–40 to 150
25
5
5
nV/°C
75
Input Bias Current
Input Offset Current
Input Capacitance
I
IB
TBD
160
600
4000
160
600
4000
pA
pA
pF
–40 to 125
–40 to 150
25
I
5
OS
–40 to 125
–40 to 150
25
C
Differential
Common mode
Shutdown
1
5
IN
25
Enable Input Low (Note 8)
Enable Input High (Note 8)
V
EN−L
–40 to 125
–40 to 125
25
0.5
V
V
V
EN−H
Enabled
1.3
Enable Pin Input Leakage
(Note 8)
I
1
100
nA
EN
Output Characteristics
Open Loop Voltage Gain
A
25
–40 to 125
–40 to 150
25
120
110
90
TBD
dB
VOL
Output Voltage High,
Referenced from
V
− V
I
= 30 mA
TBD
22
50
mV
DD
OH
OUT
–40 to 125
–40 to 150
25
V
DD
Supply Rail
100
I
I
= 3 mA
50
OUT
Output Voltage Low,
V
− V
= 30 mA
25
TBD
22
90
mV
OL
SS
OUT
Referenced to V Supply
SS
–40 to 125
–40 to 150
25
Rail
100
I
= 3 mA
50
30
OUT
Short Circuit Current
I
Sinking Current
Sourcing Current
25
mA
pF
SC
25
30
Maximum Capacitive Load
C
No sustained oscillation
25
400
L
Dynamic Response
Bandwidth (f
Gain Margin
)
BW
C = 20 pF
25
25
25
25
25
1.5
15
60
0.7
20
MHz
dB
°
−3dB
L
A
C = 20 pF
L
M
M
Phase Margin
Slew Rate
Φ
C = 20 pF
L
SR
V/ms
ms
Settling Time
t
s
0.1%, A = 1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. The enable function is available on NCS21673 only
9. Shutdown Time (t
) and Enable Time (t ) are defined as the time between the 50% point of the signal applied to the EN pin and the
OFF
ON
point at which the output voltage reaches within 10% of its final value
www.onsemi.com
5
NCS21801, NCS21802, NCS21803, NCS21804
ELECTRICAL CHARACTERISTICS (continued)
At T = +25°C, V = 3.3 V, and V = V = mid−supply, unless otherwise noted. Boldface limits apply over the specified
A
S
CM
OUT
temperature range, unless otherwise noted, guaranteed by characterization and/or design.
Parameter
Dynamic Response
Overload Recovery Time
Crosstalk
Symbol
Conditions
Temp (°C)
Min
Typ
Max
Unit
t
V
IN
* GAIN > V
S
25
25
25
25
25
200
−100
70
ms
dB
dB
OR
f = 10 kHz
EMI Rejection Ratio
EMIRR
f = 400 MHz
f = 800 MHz
f = 1.8 GHz
77
91
Noise
Voltage Noise Density
e
f
f
= 1 kHz
25
25
42
nV/√Hz
N
in
Voltage Noise,
Peak−to−Peak
e
P−P
= 0.1 Hz to 10 Hz
400
nV
PP
in
Current Noise Density
Power Supply
i
f
= 1 kHZ
25
20
90
fA/√Hz
mA
N
in
Quiescent Current
I
Per channel
Per channel
25
–40 to 125
–40 to 150
25
95
Q
125
200
300
300
Quiescent Current in
Shutdown (Note 8)
I
TBD
nA
QSD
–40 to 125
25
Power Up Time
t
40
40
ms
ms
ms
dB
ON
Enable Time (Note 8, 9)
Shutdown Time (Note 8, 9)
t
25
EN
t
25
TBD
TBD
OFF
Power Supply Rejection
Ratio
PSRR
V
V
= 1.6 V to 5.5 V
= 1.8 V to 5.5 V
25
115
110
90
S
–40 to 125
–40 to 150
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. The enable function is available on NCS21673 only
9. Shutdown Time (t
) and Enable Time (t ) are defined as the time between the 50% point of the signal applied to the EN pin and the
OFF
ON
point at which the output voltage reaches within 10% of its final value
www.onsemi.com
6
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
G
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
C
D
MIN
2.85
1.35
0.90
0.25
MAX
3.15
1.65
1.10
0.50
DETAIL Z
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
10
3.00
0.05
H
SEATING
PLANE
END VIEW
C
_
_
SIDE VIEW
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa C
2X
2X 3 TIPS
bbb H D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
UDFN8, 2x2
CASE 517AW
ISSUE A
A
B
E
NOTES:
D
L
L
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINALS AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM THE TERMINAL
TIP.
L1
PIN ONE
REFERENCE
DETAIL A
ALTERNATE
CONSTRUCTIONS
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. FOR DEVICE OPN CONTAINING W OPTION,
DETAIL B ALTERNATE CONSTRUCTION IS
2X
0.10
C
2X
0.10
C
NOT APPLICABLE.
TOP VIEW
MILLIMETERS
MOLD CMPD
DIM MIN
MAX
0.55
0.05
EXPOSED Cu
A
A1
A3
b
D
D2
E
E2
e
L
0.45
0.00
DETAIL B
A
0.13 REF
0.10
C
A3
C
0.18
0.30
2.00 BSC
A3
A1
1.50
1.70
0.08
C
DETAIL B
2.00 BSC
A1
SIDE VIEW
0.80
1.00
NOTE 4
ALTERNATE
SEATING
PLANE
0.50 BSC
CONSTRUCTION
0.20
0.45
L1
−−−
0.15
D2
DETAIL A
RECOMMENDED
8X L
SOLDERING FOOTPRINT*
1
4
8X
0.50
1.73
PACKAGE
OUTLINE
E2
b
5
8
8X
e
1.00
2.30
0.10 C A B
e/2
0.05
C
NOTE 3
BOTTOM VIEW
1
8X
0.30
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
E
MIN
−−
NOM
−−
MAX
MIN
−−
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
e
1.10
0.15
0.40
0.23
3.10
3.10
b 8 PL
0.05
0.25
0.13
2.90
2.90
0.08
0.002
0.010
0.005
0.114
0.114
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
3.00
0.118
e
L
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
SEATING
PLANE
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
−T−
H
E
A
0.038 (0.0015)
L
A1
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
NCS21801, NCS21802, NCS21803, NCS21804
PACKAGE DIMENSIONS
TSSOP−14 WB
CASE 948G
ISSUE C
NOTES:
14X K REF
1. DIMENSIONING AND TOLERANCING PER
M
S
S
V
ANSI Y14.5M, 1982.
0.10 (0.004)
T U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
S
0.15 (0.006) T U
N
0.25 (0.010)
14
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
8
2X L/2
M
B
L
N
−U−
PIN 1
IDENT.
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
DETAIL E
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
K
0.15 (0.006) T U
A
−V−
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
K1
A
B
C
D
F
G
H
J
4.90
4.30
−−−
0.05
0.50
5.10 0.193 0.200
4.50 0.169 0.177
J J1
1.20
−−− 0.047
0.15 0.002 0.006
0.75 0.020 0.030
SECTION N−N
0.65 BSC
0.026 BSC
0.60 0.020 0.024
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.50
0.09
0.09
0.19
J1
K
−W−
C
K1 0.19
L
M
6.40 BSC
0.252 BSC
0.10 (0.004)
0
8
0
8
_
_
_
_
SEATING
PLANE
−T−
H
G
DETAIL E
D
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
01.34X6
14X
1.26
DIMENSIONS: MILLIMETERS
www.onsemi.com
12
NCS21801, NCS21802, NCS21803, NCS21804
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