NCV1009_06 [ONSEMI]
2.5 Volt Reference; 2.5伏参考
| 型号： | NCV1009_06 |
| 厂家： | 
ONSEMI |
| 描述： | 2.5 Volt Reference |
| 文件： | 总6页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV1009
2.5 Volt Reference
The NCV1009 is a precision trimmed 2.5 V 5.0 mV shunt
regulator diode. The low dynamic impedance and wide operating
current range enhances its versatility. The tight reference tolerance is
achieved by on−chip trimming which minimizes voltage tolerance and
temperature drift.
A third terminal allows the reference voltage to be adjusted 5.0%
to calibrate out system errors. In many applications, the NCV1009Z
can be used as a pin−to−pin replacement of the LT1009CZ and the
LM136Z−2.5 with the external trim network eliminated.
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MARKING
DIAGRAMS
8
SOIC−8
D SUFFIX
CASE 751
1009D
ALYW
G
8
Features
1
• 0.2% Initial Tolerance Max.
• Guaranteed Temperature Stability
1
• Maximum 0.6 W Dynamic Impedance
• Wide Operating Current Range
• Directly Interchangeable with LT1009 and LM136 for Improved
Performance
TO−92
Z SUFFIX
CASE 29
1009Z
ALYWWG
G
• No Adjustments Needed for Minimum Temperature Coefficient
• Meets Mil Std 883C ESD Requirements
A
L
Y
= Assembly Location
= Wafer Lot
= Year
• Extended Operating Temperature Range for Use in Automotive
Applications
WW, W = Work Week
G
= Pb−Free Package
• NCV Prefix, for Automotive and Other Applications Requiring Site
and Change Control
(Note: Microdot may be in either location)
• Pb−Free Packages are Available
PIN CONNECTIONS
1
8
NC
NC
NC
NC
NC
V
REF
GND
ADJ. PIN
5.0 V−35 V
Pin 1. ADJ. PIN
2. V
REF
3. GND
3.6 kW
1 2 3
V
REF
ORDERING INFORMATION
ADJ
10 kW∗
TRIM
Device
Package
SOIC−8
SOIC−8
Shipping
NCV1009D
95 Units/Rail
GND
NCV1009DR2
NCV1009DR2G
2500 Tape & Reel
2500 Tape & Reel
SOIC−8
* 5.0% Trim Range
(Pb−Free)
If the external trim resistor is not used, the “ADJ. PIN” should
be left floating. The 10k trim potentiometer does not effect the
temperature coefficient of the device.
NCV1009Z
TO−92
2000 Units/Rail
NCV1009ZG
TO−92
(Pb−Free)
2000 Tape & Reel
Figure 1. Application Diagram
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 9
NCV1009/D
NCV1009
V
REF
P3
N14
N16
10 pF
TRIM
P2
P1
15 pF
14 kW
20 kW
20 kW
20 pF
10.15 kW
63 kW
N12 N13
N11
N7
N2
N5
N8
30 kW
N1
N4
ADJ
N3
N10
6.785 kW
N9
D1
N6
1.14 kW
N15
1.14 kW
SUBSTRATE
GND
Figure 2. Block Diagram
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2
NCV1009
MAXIMUM RATINGS*
Rating
Value
20
Unit
mA
mA
Reverse Current
Forward
10
Package Thermal Resistance, SOIC−8:
Junction−to−Case, R
45
165
°C/W
°C/W
q
JC
Junction−to−Ambient, R
q
JA
Package Thermal Resistance, TO−92:
Junction−to−Case, R
−
170
°C/W
°C/W
q
JC
Junction−to−Ambient, R
q
JA
Operating Temperature Range
Storage Temperature Range
Lead Temperature Soldering:
−40 to +125
−65 to +150
°C
°C
Wave Solder (through hole styles only) (Note 1)
Reflow: (SMD styles only) (Notes 2, 3)
260 peak
240 peak
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*The maximum package power dissipation must be observed.
1. 10 second maximum
2. 60 second maximum above 183°C.
3. −5°C / +0°C allowable conditions.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified.)
A
Characteristic
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Test Conditions
Min
Typ
Max
2.508
2.508
Unit
V
I
= 1.0 mA
2.492
2.480
2.500
2.500
R
−40°C ≤ T ≤ 125°C
V
A
Reverse Breakdown Voltage
Change with Current
400 mA ≤ I ≤ 10 mA
−
−
2.6
3.0
5.0
6.0
mV
mV
R
(Note 4)
(Note 4)
Reverse Dynamic Impedance
I
= 1.0 mA
−
−
0.2
0.4
1.0
1.4
W
W
R
Temperature Stability
Average Temperature Coefficient
0°C ≤ T ≤ 70°C, (Note 5)
−
−
1.8
15
−
−
mV
ppm/°C
A
0°C ≤ T ≤ 70°C, (Note 5)
A
Long Term Stabilty
T = 25°C 0.1 C, I = 1.0 mA
−
20
−
ppm/kHr
A
R
4. Denotes the specifications which apply over full operating temperature range.
5. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range.
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3
NCV1009
TYPICAL PERFORMANCE CHARACTERISTICS
−1
−2
5
10
4
10
3
2
1
0
−3
10
10
10
−4
−5
T = 25°C
J
0.5
1.4
1.8
2.6
1.0
2.2
0
8
12
20
4
16
REVERSE VOLTAGE (V)
REVERSE CURRENT (mA)
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Change in Reverse Voltage vs.
Reverse Current
1.2
100
T = 25°C
J
1.0
0.8
0.6
10
1.0
0.1
0.4
0.2
0
0.001
0.01
0.1
1.0
10
10
100
1.0 k
10 k
100 k
FORWARD CURRENT (mA)
FREQUENCY (Hz)
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Dynamic Impedance vs. Frequency
250
I
= ImA
R
0
T = 25°C
J
2.5
200
2.0
1.5
1.0
0.5
0
5.0 k
150
100
50
INPUT
OUTPUT
10.0
4.0
0
0
1
20
10
100
1.0 k
10 k
100 k
TIME (ms)
FREQUENCY (Hz)
Figure 7. Zener Noise Voltage vs. Frequency
Figure 8. Response Time
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4
NCV1009
PACKAGE DIMENSIONS
SOIC−8
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
−Z−
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NCV1009
PACKAGE DIMENSIONS
TO−92
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021 0.407
0.055
0.105
0.020
1.15
2.42
0.39
D
X X
G
K
L
−−− 12.70
J
H
V
−−−
0.105
6.35
2.04
−−−
−−−
N
P
R
V
2.66
2.54
−−−
C
−−− 0.100
0.115
0.135
−−−
−−−
2.93
3.43
SECTION X−X
−−−
1
N
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NCV1009/D
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