NCV330MUTBG [ONSEMI]

受控负载开关,软启动,3.0 A;
NCV330MUTBG
型号: NCV330MUTBG
厂家: ONSEMI    ONSEMI
描述:

受控负载开关,软启动,3.0 A

开关 软启动 光电二极管
文件: 总9页 (文件大小:249K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCP330  
Soft-Start Controlled Load  
Switch  
The NCP330 is a low Ron Nchannel MOSFET controlled by a  
softstart sequence of 2 ms for mobile applications.  
The very low R  
allows system supplying or battery charging  
DS(on)  
http://onsemi.com  
MARKING  
up to DC 3A.The device is enable automatically if a Power Supply is  
connected on Vin pin (active High) and maintained off if no Vin  
(internal pull down).  
Due to a current consumption optimization, leakage current is  
drastically decreased from the battery connected to the device,  
allowing long battery life.  
DIAGRAM  
1
3A M  
UDFN4  
CASE 517CE  
Features  
1.8 V 5.5 V Operating Range  
30 mW NMOSFET  
3A = Specific Device Code  
M
= Date Code  
DC Current Up to 3 A  
Peak Current Up to 5 A  
Builtin SoftStart 2 ms  
Reverse Voltage Protection  
Active High with Integrated Bridge  
PINOUT  
IN  
OUT  
EN  
Compliance to IEC6100042 (Level 4)  
8.0 kV (Contact)  
15 kV (Air)  
ESD Ratings: Machine Model = B  
Human Body Model = 3  
PAD1  
GND  
mDFN4 1.2 x 1.6 mm  
This is a PbFree Device  
(Top View)  
Typical Applications  
Mobile Phones  
Tablets  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of  
this data sheet.  
Digital Cameras  
GPS  
Computers  
Vbat  
OUT  
NCP330  
IN  
1 mF  
EN  
4
1 mF  
EN  
GND  
VBUS  
D+  
D  
CMIC  
SBC Charger  
IN  
OUT  
SYSTEM  
USB  
Port  
Supply  
Monitoring  
HS  
USB  
GND  
Signal  
Routing  
I@C  
Accessory  
Detection and ID  
Figure 1. Typical Application Circuit  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
June, 2012 Rev. 1  
NCP330/D  
NCP330  
PIN FUNCTION DESCRIPTION  
Pin  
Number  
Pin Name  
Type  
Description  
IN  
1
POWER  
Powerswitch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as  
close as possible to the IC.  
GND  
EN  
2
3
4
POWER  
INPUT  
Ground connection;  
Enable input, logic high turns on power switch.  
OUT  
OUTPUT  
Powerswitch output; connect a 1 mF ceramic capacitor from OUT to GND as close as pos-  
sible to the IC is recommended.  
PAD1  
POWER  
Exposed pad can be connected to GND plane for dissipation purpose or any other thermal  
plane.  
BLOCK DIAGRAM  
IN: Pin1  
1 mF  
OUT: Pin 4  
Gate driver and soft  
start control  
Battery  
VREF  
Charge  
Pump  
EN: 3  
EN block  
2
Figure 2. Block Diagram  
http://onsemi.com  
2
NCP330  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
IN, OUT, EN, Pins:  
V
V
V
0.3 to + 7.0  
7.0 to + 7.0  
15 Air, 8 contact  
EN , IN , OUT  
From IN to OUT Pins: Input/Output  
V
V
V
IN , OUT  
ESD Withstand Voltage (IEC 6100042) (Note 1)  
(IN and OUT when bypassed with 1.0 mF capacitor minimum)  
ESD IEC  
kV  
Human Body Model (HBM) ESD Rating are (Notes 2 and 3)  
Machine Model (MM) ESD Rating are (Notes 2 and 3)  
ESD HBM  
ESD MM  
4000  
200  
V
V
Latchup protection (Note 4)  
Pins IN, OUT, EN  
mA  
LU  
100  
Maximum Junction Temperature Range  
Storage Temperature Range  
T
40 to + 125  
40 to + 150  
Level 1  
°C  
°C  
J
T
STG  
Moisture Sensitivity (Note 5)  
MSL  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Guaranteed by design.  
2. According to JEDEC standard JESD22A108.  
3. This device series contains ESD protection and passes the following tests:  
Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22A114 for all pins.  
Machine Model (MM) 200 V per JEDEC standard: JESD22A115 for all pins.  
4. Latch up Current Maximum Rating: 100 mA per JEDEC standard: JESD78 class II.  
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: JSTD020.  
OPERATING CONDITIONS  
Symbol  
Parameter  
Conditions  
Min  
1.8  
0
Typ  
Max  
5.5  
Unit  
V
IN  
Operational Power Supply  
Enable Voltage  
V
V
EN  
5.5  
T
Ambient Temperature Range  
Junction Temperature Range  
Decoupling input capacitor  
Decoupling output capacitor  
Thermal Resistance Junction to Air  
Maximum DC current  
40  
40  
1
25  
25  
+ 85  
+ 125  
°C  
°C  
mF  
mF  
°C/W  
A
A
T
J
C
IN  
C
USB port per Hub  
UDFN4 package (Note 6)  
UDFN4 package  
1
OUT  
R
170  
q
JA  
I
3
5
OUT  
I peak  
Maximum Peak current  
1 ms at 217 Hz (GSM calibration)  
A
P
D
Power Dissipation Rating (Note 7)  
T
25°C  
UDFN4 package  
UDFN4 package  
0.58  
W
A
T = 85°C  
A
0.225  
6. The R  
is dependent of the PCB heat dissipation.  
q
JA  
7. The maximum power dissipation (P ) is given by the following formula:  
D
T
JMAX * TA  
PD  
+
RqJA  
http://onsemi.com  
3
 
NCP330  
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T between 40°C to +85°C and T up to + 125 °C for between  
VIN  
A
J
1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T = + 25 °C and  
= 5 V.  
A
VIN  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
POWER SWITCH  
V
= 3 V,  
= 5 V  
T = 25°C  
26  
mW  
IN  
IN  
J
Static drainsource onstate  
R
V
DS(on)  
resistance  
40°C < T < 125°C  
50  
4
J
T
R
Output rise time  
Output fall time  
Gate turn on  
V
= 5 V  
= 5 V  
= 5 V  
= 3 V  
C
LOAD  
= 1 mF,  
LOAD  
= 125 W (Note 8)  
0.5  
0.5  
2
4
2
ms  
ms  
ms  
IN  
R
T
F
V
V
V
C
= 100 mF,  
LOAD  
IN  
IN  
IN  
R
= 40 W (Note 8)  
LOAD  
T
on  
From Vin applied to V  
10% of fully on  
=
=
4
3
OUT  
From Vin applied to V  
10% of fully on (Note 9)  
OUT  
ENABLE INPUT EN  
V
Highlevel input voltage  
Lowlevel input voltage  
En pulldown resistor  
En pullup resistor  
1.15  
V
IH  
V
0.85  
V
IL  
R
R
1
MW  
MW  
pd  
pu  
1.5  
REVERSELEAKAGE PROTECTION  
Reversecurrent protection  
QUIESCENT CURRENT  
I
V
IN  
= 0 V, V = 4.2 V (part disable), T = 25°C  
0.15  
100  
1
mA  
mA  
REV  
out  
J
Iq  
Current consumption  
No load  
200  
8. Parameters are guaranteed for C  
9. Guaranteed by characterization.  
and R  
connected to the OUT pin with respect to the ground.  
LOAD  
LOAD  
http://onsemi.com  
4
 
NCP330  
TYPICAL CHARACTERISTICS  
140  
120  
100  
80  
0.35  
T = 85°C  
A
0.30  
0.25  
0.20  
0.15  
0.10  
T = 25°C  
A
T = 85°C  
A
T = 40°C  
A
60  
T = 40°C  
A
40  
20  
0
0.05  
0
T = 25°C  
A
1.5 2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
1.5 2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0 5.5  
V
IN  
, INPUT VOLTAGE (V)  
V , OUTPUT VOLTAGE (V)  
OUT  
Figure 3. Supply Current vs. Voltage  
Figure 4. Reverse Current vs. Output Voltage  
50  
45  
40  
35  
30  
50  
45  
40  
35  
30  
I
I
= 2 A  
= 1 A  
OUT  
OUT  
I
= 3 A  
OUT  
I
= 0.5 A  
OUT  
I
= 3 A  
= 2 A  
OUT  
I
OUT  
OUT  
I
= 1 A  
I
= 0.5 A  
5.4  
OUT  
25  
20  
25  
20  
1.8  
3.0  
4.2  
, INPUT VOLTAGE (V)  
1.8  
3.0  
4.2  
V , INPUT VOLTAGE (V)  
IN  
5.4  
V
IN  
Figure 5. RDS(on) vs. VIN Voltage at 255C  
Figure 6. RDS(on) vs. VIN Voltage at 855C  
50  
45  
40  
35  
30  
50  
45  
40  
35  
30  
V
= 1.8 V  
IN  
V
IN  
= 3.0 V  
= 5.5 V  
V
IN  
I
= 2 A  
= 1 A  
OUT  
I
= 3 A  
OUT  
V
IN  
= 5.0 V  
0.5  
25  
20  
25  
20  
I
= 0.5 A  
OUT  
I
OUT  
1.8  
3.0  
V
4.2  
, INPUT VOLTAGE (V)  
5.4  
0
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
I
, OUTPUT CURRENT (A)  
OUT  
IN  
Figure 7. RDS(on) vs. VIN Voltage at 405C  
Figure 8. RDS(on) vs. IOUT at 255C  
http://onsemi.com  
5
NCP330  
TYPICAL CHARACTERISTICS  
50  
45  
40  
35  
30  
90  
80  
70  
60  
50  
40  
V
= 3.0 V  
= 5.5 V  
IN  
V
IN  
V
IN  
= 5.0 V  
30  
20  
25  
20  
10  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
I , OUTPUT CURRENT (A)  
OUT  
I , OUTPUT CURRENT (A)  
OUT  
Figure 9. RDS(on) vs. IOUT at 855C  
Figure 10. Junction Temperature vs. IOUT  
Figure 12. TON Time on 75 mA Load  
Figure 14. TON Time on 800 mA Load  
1.02  
1.01  
1.00  
V
IH  
vs. V  
IN  
V
IL  
vs. V  
IN  
0.99  
0.98  
0.97  
0.96  
0.95  
0.94  
0
1
2
3
4
5
6
V
IN  
, INPUT VOLTAGE (V)  
Figure 11. Logic Threshold vs. VIN  
Figure 13. TOFF Time on 75 mA Load  
http://onsemi.com  
6
NCP330  
TYPICAL CHARACTERISTICS  
Figure 15. TOFF Time on 800 mA Load  
Figure 16. TON Time on 2 A Load  
Figure 17. TOFF Time on 2.3 A Load  
http://onsemi.com  
7
NCP330  
FUNCTIONAL DESCRIPTION  
Blocking Control  
Overview  
The NCP330 is a high side Nchannel MOSFET power  
distribution switch designed to connect external voltage  
directly to the system. The high side MOSFET is  
automatically turned on if the Vin voltage is applied thanks  
to internal pull up connected between Vin and EN pin. The  
turned off is obtained by Vin removal. Due to the soft start  
circuitry, NCP330 is able to limit large voltage surges.  
The blocking control circuitry switches the bulk of the  
power NMOS. When the part is off (No V or EN tied to  
IN  
GND externally) , the body diode limits the leakage current  
I
from OUT to IN. In this mode, anode of the body diode  
REV  
is connected to IN pin and cathode is connected to OUT pin.  
In operating condition, anode of the body diode is connected  
to OUT pin and cathode is connected to IN pin preventing  
the discharge of the power supply.  
Enable input  
Enable pin is an active high. The part is off when Vin is not  
present, limiting current consumption from battery to OUT  
pin.  
Cin Capacitor  
A IN capacitor, 1 mF, at least, capacitor must be placed as  
close as possible the part to be Compliant with  
IEC6100042(Level 4).  
In the other side, the part is automatically turned on when  
V
IN  
is applied.  
Cout Capacitor  
Depending on the sinking current during system start up  
and system turn off, a capacitor must be placed on the output.  
A 1 mF is strongly recommended but can be decreased down  
to 100 nF if the above two sequences are well controlled and  
parasitic inductance connected on the Vout line is negligible.  
APPLICATION INFORMATION  
Power Dissipation  
PCB Recommendations  
The device’s junction temperature depends on different  
contributor factor such as board layout, ambient  
temperature, device environment, etc... Yet, the main  
contributor in term of junction temperature is the power  
dissipation of the power MOSFET. Assuming this, the  
power dissipation and the junction temperature in normal  
mode can be calculated with the following equations:  
The NCP330 integrates an up to 3 A rated NMOS FET,  
and the PCB design rules must be respected to properly  
evacuate the heat out of the silicon. The mDFN4 PAD1 must  
be connected to ground plane to increase the heat transfer if  
necessary. By increasing PCB area, the R  
of the package  
qJA  
can be decreased, allowing higher power dissipation.  
ǒ
Ǔ2  
P
D + RDS(on)   IOUT  
P
= Power dissipation (W)  
= Power MOSFET on resistance (W)  
= Output current (A)  
D
R
DS(on)  
OUT  
I
TJ + PD   RqJA ) TA  
T
= Junction temperature (°C  
J
R
T
= Package thermal resistance (°C/W)  
= Ambient temperature (°C)  
qJA  
A
ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
NCP330MUTBG  
3A  
mDFN4, 1.2x1.6 mm  
(PbFree)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
8
NCP330  
PACKAGE DIMENSIONS  
UDFN4 1.2x1.6, 0.5P  
CASE 517CE  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
L
L
A
B
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.15 AND  
0.20 mm FROM THE TERMINAL TIPS.  
4. PACKAGE DIMENSIONS EXCLUSIVE OF  
BURRS AND MOLD FLASH.  
L1  
PIN ONE  
REFERENCE  
DETAIL A  
ALTERNATE TERMINAL  
CONSTRUCTIONS  
E
MILLIMETERS  
2X  
0.05  
C
DIM MIN  
0.45  
A1 0.00  
NOM MAX  
A
0.50  
−−−  
0.55  
0.05  
0.05  
C
2X  
EXPOSED Cu  
MOLD CMPD  
A3  
b
0.13 REF  
0.30  
1.20 BSC  
0.86  
1.60 BSC  
0.50  
TOP VIEW  
0.25  
0.35  
0.96  
0.60  
D
(A3)  
DETAIL B  
D2 0.76  
E
E2 0.40  
A
C
0.05  
0.05  
C
C
DETAIL B  
ALTERNATE  
e
L
0.50 BSC  
0.30  
−−−  
CONSTRUCTION  
0.20  
0.40  
0.15  
L1  
−−−  
SEATING  
PLANE  
A1  
SIDE VIEW  
D2  
RECOMMENDED  
MOUNTING FOOTPRINT*  
DETAIL A  
4X b  
0.86  
1
2
4X  
M
0.05  
C A B  
0.25  
PACKAGE  
OUTLINE  
NOTE 3  
E2  
4
3
1.90  
e
4X L  
e/2  
0.50  
BOTTOM VIEW  
1
4X  
0.45  
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NCP330/D  

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