NCV33164 [ONSEMI]
Micropower Undervoltage Sensing Circuits; 微功耗欠压检测电路
| 型号： | NCV33164 |
| 厂家： | 
ONSEMI |
| 描述： | Micropower Undervoltage Sensing Circuits |
| 文件： | 总12页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MC34164, MC33164,
NCV33164
Micropower Undervoltage
Sensing Circuits
The MC34164 series are undervoltage sensing circuits specifically
designed for use as reset controllers in portable microprocessor based
systems where extended battery life is required. These devices offer
the designer an economical solution for low voltage detection with a
single external resistor. The MC34164 series features a bandgap
reference, a comparator with precise thresholds and built−in hysteresis
to prevent erratic reset operation, an open collector reset output
capable of sinking in excess of 6.0 mA, and guaranteed operation
down to 1.0 V input with extremely low standby current. The MC
devices are packaged in 3−pin TO−92 (TO−226AA), micro size
TSOP−5, 8−pin SOIC−8 and Micro8™ surface mount packages. The
NCV device is packaged in SOIC−8.
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1
2
3
1
2
3
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
Applications include direct monitoring of the 3.0 V or 5.0 V
MPU/logic power supply used in appliance, automotive, consumer,
and industrial equipment.
TO−92 (TO−226AA)
P SUFFIX
CASE 29
Features
• Temperature Compensated Reference
8
5
• Monitors 3.0 V (MC34164−3) or 5.0 V (MC34164−5) Power Supplies
• Precise Comparator Thresholds Guaranteed Over Temperature
• Comparator Hysteresis Prevents Erratic Reset
• Reset Output Capable of Sinking in Excess of 6.0 mA
• Internal Clamp Diode for Discharging Delay Capacitor
• Guaranteed Reset Operation With 1.0 V Input
8
1
1
1
TSOP−5
SN SUFFIX
CASE 483
SOIC−8
D SUFFIX
CASE 751
Micro8
DM SUFFIX
CASE 846A
PIN CONNECTIONS
• Extremely Low Standby Current: As Low as 9.0 ꢀ A
• Economical TO−92 (TO−226AA), TSOP−5, SOIC−8 and Micro8
Surface Mount Packages
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
1
2
3
4
8
7
6
5
Reset
Input
N.C.
N.C.
N.C.
N.C.
N.C.
Ground
(Top View)
• Pb−Free Packages are Available
Input
TSOP−5
TO−92
Pin 1. Ground
2. Input
Pin 1. Reset
2. Input
3. Ground
Reset
3. Reset
4. NC
5. NC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1.2 V
Sink Only
Positive True Logic
ref
=
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
GND
Figure 1. Representative Block Diagram
This device contains 28 active transistors.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2009 − Rev. 18
MC34164/D
MC34164, MC33164, NCV33164
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Power Input Supply Voltage
Reset Output Voltage
V
in
O
−1.0 to 12
−1.0 to 12
V
V
Reset Output Sink Current
I
Internally
Limited
mA
Sink
Clamp Diode Forward Current, Reset to Input Pin (Note 1)
IF
100
mA
Power Dissipation and Thermal Characteristics
P Suffix, Plastic Package
P
700
178
mW
°C/W
D
Maximum Power Dissipation @ T = 25°C
A
R
Thermal Resistance, Junction−to−Air
ꢁ
JA
D Suffix, Plastic Package
Maximum Power Dissipation @ T = 25°C
Thermal Resistance, Junction−to−Air
DM Suffix, Plastic Package
Maximum Power Dissipation @ T = 25°C
Thermal Resistance, Junction−to−Air
700
178
mW
P
D
A
°C/W
R
ꢁ
JA
520
240
mW
°C/W
P
D
A
R
ꢁ
JA
Operating Junction Temperature
T
+150
°C
°C
J
Operating Ambient Temperature Range
MC34164 Series
T
A
0 to +70
MC33164 Series, NCV33164
− 40 to +125
Storage Temperature Range
T
stg
− 65 to +150
°C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
4000
200
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MC34164−3, MC33164−3 SERIES, NCV33164−3
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature
A
A
range that applies [Notes 2 & 3], unless otherwise noted.)
Characteristic
COMPARATOR
Symbol
Min
Typ
Max
Unit
Threshold Voltage
High State Output (V Increasing)
Low State Output (V Decreasing)
V
V
V
V
H
2.55
2.55
0.03
2.71
2.65
0.06
2.80
2.80
−
IH
in
in
IL
Hysteresis (I
= 100 ꢀ A)
Sink
RESET OUTPUT
Output Sink Saturation
V
OL
V
−
−
0.14
0.1
0.4
0.3
(V = 2.4 V, I
= 1.0 mA)
in
Sink
Sink
(V = 1.0 V, I
in
= 0.25 mA)
Output Sink Current (V , Reset = 2.4 V)
I
6.0
12
30
mA
in
Sink
I
Output Off−State Leakage
R(leak)
ꢀ
A
−
−
0.02
0.02
0.5
1.0
(V , Reset = 3.0 V)
(V , Reset = 10 V)
in
in
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)
V
F
0.6
0.9
1.2
V
F
TOTAL DEVICE
Operating Input Voltage Range
Quiescent Input Current
V
1.0 to 10
−
−
V
in
I
in
ꢀ
A
−
−
9.0
24
15
40
V
in
V
in
= 3.0 V
= 6.0 V
1. Maximum package power dissipation limits must be observed.
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
3. T
=
=
0°C for MC34164
− 40°C for MC33164, NCV33164
T
= +70°C for MC34164
= +125°C for MC33164, NCV33164
low
high
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2
MC34164, MC33164, NCV33164
MC34164−5, MC33164−5 SERIES, NCV33164−5
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature
A
A
range that applies [Notes 5 & 6], unless otherwise noted.)
Characteristic
COMPARATOR
Symbol
Min
Typ
Max
Unit
Threshold Voltage
High State Output (V Increasing)
Low State Output (V Decreasing)
V
V
V
V
H
4.15
4.15
0.02
4.33
4.27
0.09
4.45
4.45
−
IH
in
in
IL
Hysteresis (I
= 100 ꢀ A)
Sink
RESET OUTPUT
Output Sink Saturation
V
OL
V
−
−
0.14
0.1
0.4
0.3
(V = 4.0 V, I
= 1.0 mA)
in
Sink
Sink
(V = 1.0 V, I
in
= 0.25 mA)
Output Sink Current (V , Reset = 4.0 V)
I
7.0
20
50
mA
in
Sink
I
Output Off−State Leakage
R(leak)
ꢀ
A
−
−
0.02
0.02
0.5
2.0
(V , Reset = 5.0 V)
(V , Reset = 10 V)
in
in
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)
V
F
0.6
0.9
1.2
V
F
TOTAL DEVICE
Operating Input Voltage Range
Quiescent Input Current
V
1.0 to 10
−
−
V
in
I
in
ꢀ
A
−
−
12
32
20
50
V
in
V
in
= 5.0 V
= 10 V
4. Maximum package power dissipation limits must be observed.
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. T
= 0°C for MC34164
T
= +70°C for MC34164
low
high
= − 40°C for MC33164, NCV33164
= +125°C for MC33164, NCV33164
7. NCV prefix is for automotive and other applications requiring site and change control.
10
10
R = 82 k to V
L
T = 25°C
A
R = 82 k to V
L
T = 25°C
A
in
in
8.0
6.0
8.0
6.0
4.0
2.0
0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
10
0
2.0
4.0
6.0
8.0
10
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 2. MC3X164−3 Reset Output
Figure 3. MC3X164−5 Reset Output
Voltage versus Input Voltage
Voltage versus Input Voltage
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3
MC34164, MC33164, NCV33164
5.0
4.0
5.0
4.0
3.0
2.0
1.0
3.0
2.0
1.0
R = 82 k to V
L
R = 82 k to V
L
in
in
T = 25°C
A
T = 25°C
A
0
2.62
0
4.22
2.66
2.70
2.74
2.78
4.26
4.30
4.34
4.38
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 4. MC3X164−3 Reset Output
Figure 5. MC3X164−5 Reset Output
Voltage versus Input Voltage
Voltage versus Input Voltage
2.76
2.72
2.68
2.64
2.60
4.36
4.32
4.28
4.24
4.20
Upper Threshold
High State Output
Upper Threshold
High State Output
Lower Threshold
Low State Output
Lower Threshold
Low State Output
-ꢀ50 -ꢀ25
0
25
50
75
100
125
-ꢀ50 -ꢀ25
0
25
50
75
100
125
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 6. MC3X164−3 Comparator Threshold
Figure 7. MC3X164−5 Comparator Threshold
Voltage versus Temperature
Voltage versus Temperature
50
40
30
50
40
30
T = 25°C
A
T = 25°C
A
T = 0°C
A
20
10
0
20
10
0
T = 0°C
A
T = 70°C
A
T = 70°C
A
0
2.0
4.0
6.0
8.0
10
0
2.0
4.0
6.0
8.0
10
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 8. MC3X164−3 Input Current
Figure 9. MC3X164−5 Input Current
versus Input Voltage
versus Input Voltage
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4
MC34164, MC33164, NCV33164
4.0
4.0
T = 25°C
A
V
in
= 2.4 V
V , Reset = 4 V
in
T = 70°C
A
T = 0°C
A
3.0
2.0
3.0
2.0
T = 70°C
A
T = 25°C
A
T = 25°C
A
T = 0°C
A
T = 25°C
A
T = 0°C
A
T = 0°C
A
1.0
0
1.0
0
T = 70°C
A
T = 70°C
A
0
4.0
8.0
12
16
20
0
4.0
8.0
12
16
20
V
Sink
, SINK CURRENT (mA)
I
, SINK CURRENT (mA)
Sink
Figure 10. MC3X164−3 Reset Output
Figure 11. MC3X164−5 Reset Output
Saturation versus Sink Current
Saturation versus Sink Current
32
24
16
8.0
0
V
= 5.0 V to 4.0 V
in
R = 43 k
Reset
L
V
= 0 V
T = 25°C
A
in
90%
T = 25°C
A
V
in
5.0 V
4.0 V
V
in
43k
5.0V
4.0V
Reset
10
%
Ref
0
0.4
0.8
V , FORWARD VOLTAGE (V)
1.2
1.6
5.0 ꢀ s/DIV
F
Figure 12. Clamp Diode Forward Current
versus Voltage
Figure 13. Reset Delay Time
(MC3X164−5 Shown)
R
Input
Power
Supply
Reset
Microprocessor
Circuit
Reset
C
DLY
1
1.2 V
ref
t
= RC In
DLY
V
ǒ Ǔ
th(MPU)
DLY
1 −
GND
V
in
A time delayed reset can be accomplished with the addition of C . For systems with extremely fast power
is
DLY
supply rise times (<ꢀ500 ns) it is recommended that the RC time constant be greater than 5.0 ꢀ s. V
the microprocessor reset input threshold.
DLY
th(MPU)
Figure 14. Low Voltage Microprocessor Reset
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5
MC34164, MC33164, NCV33164
Test Data
ꢂ V
R
H
V
(mV)
R
R
L
(kꢃ)
H
th
H
I
in
V
in
(mV)
(ꢃ)
R
L
Power
Supply
Microprocessor
Circuit
60
0
0
43
10
6.8
4.3
10
6.8
4.3
10
8.2
6.8
5.6
4.3
Reset
103
123
160
155
199
280
262
306
357
421
530
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
100
100
100
220
220
220
470
470
470
470
470
4.3 R
H
1.2 V
ref
V ≈
+ 0.06
H
R
L
-ꢀ6
MC3X164-5
GND
ꢂ
V
≈ 10 R x 10ꢀ
H
th(lower)
where: R ≤ 1.0 kꢃ
H
43 kꢃ ≥ R ≥ 4.3 kꢃ
L
Comparator hysteresis can be increased with the addition of resistor R . The hysteresis equation has been simplified and does not account for the change of input current
I
H
as V crosses the comparator threshold (Figure 8). An increase of the lower threshold ꢂ V
will be observed due to I which is typically 10 ꢀ A at 4.3 V. The
th(lower) in
in
in
equations are accurate to 10% with R less than 1.0 kꢃ and R between 4.3 kꢃ and 43 kꢃ.
H
L
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164−5 Shown)
Input
1.0 k
Input
Power
Supply
Reset
Reset
Solar
Cells
1.2 V
ref
1.2 V
ref
GND
GND
Figure 16. Voltage Monitor
Figure 17. Solar Powered Battery Charger
V
CC
R
L
MTP3055EL
270
4.3V
Input
Reset
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164-5, its
2
output grounds the gate of the L MOSFET.
1.2 V
ref
GND MC3X164-5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
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6
MC34164, MC33164, NCV33164
ORDERING INFORMATION
†
Device
Package
Shipping
MC33164D−3G
SOIC−8
(Pb−Free)
98 Units / Rail
MC33164D−3R2G
SOIC−8
(Pb−Free)
NCV33164D−3R2*
NCV33164D−3R2G*
SOIC−8
2500 Units / Tape & Reel
SOIC−8
(Pb−Free)
MC33164DM−3R2
MC33164DM−3R2G
Micro8
4000 Units / Tape & Reel
Micro8
(Pb−Free)
MC33164P−3G
TO−92
2000 Units / Box
2000 Units / Tape & Reel
2000 Units / Pack
98 Units / Rail
(Pb−Free)
MC33164P−3RAG
MC33164P−3RPG
MC33164D−5G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
SOIC−8
(Pb−Free)
MC33164D−5R2
SOIC−8
MC33164D−5R2G
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
NCV33164D−5R2G*
MC33164DM−5R2G
MC33164P−5G
SOIC−8
(Pb−Free)
Micro8
(Pb−Free)
4000 Units / Tape & Reel
2000 Units / Box
TO−92
(Pb−Free)
MC33164P−5RAG
MC33164P−5RPG
MC34164D−3G
TO−92
2000 Units / Tape & Reel
2000 Units / Pack
(Pb−Free)
TO−92
(Pb−Free)
SOIC−8
(Pb−Free)
98 Units / Rail
MC34164D−3R2G
MC34164DM−3R2G
MC34164P−3G
SOIC−8
2500 Units / Tape & Reel
4000 Units / Tape & Reel
2000 Units / Box
(Pb−Free)
Micro8
(Pb−Free)
TO−92
(Pb−Free)
MC34164P−3RPG
MC34164D−5G
TO−92
2000 Units / Pack
(Pb−Free)
SOIC−8
(Pb−Free)
98 Units / Rail
MC34164D−5R2G
MC34164DM−5R2G
MC34164SN−5T1G
MC34164P−5G
SOIC−8
2500 Units / Tape & Reel
4000 Units / Tape & Reel
3000 Units / Tape & Reel
2000 Units / Box
(Pb−Free)
Micro8
(Pb−Free)
TSOP−5
(Pb−Free)
TO−92
(Pb−Free)
MC34164P−5RAG
MC34164P−5RPG
TO−92
2000 Units / Tape & Reel
2000 Units / Pack
(Pb−Free)
TO−92
(Pb−Free)
*NCV33164: T = −40°C, T
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
low
high
site and change control.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MC34164, MC33164, NCV33164
PIN CONNECTIONS AND MARKING DIAGRAMS
TO−92
MC3x164P−yRA
MC3x164P−yRP
MC3x164P−y
CASE 29
TSOP−5
SN SUFFIX
CASE 483
SOIC−8
D SUFFIX
CASE 751
Micro8
MC33164DM
CASE 846A
Micro8
MC34164DM
CASE 846A
8
8
MC3x1
64P−y
YWW
8
1
5
1
MIy0
AYWG
G
MCy0
AYWG
G
3x164
ALYWy
G
SRCAYWG
G
1
1
1 2 3
SRC
= Device Code
x
y
A
L
Y
= Device Number 3 or 4
= Suffix Number 3 or 5
= Assembly Location
= Wafer Lot
= Year
W, WW = Work Week
G
= Pb−Free
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8
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
P SUFFIX
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
MILLIMETERS
SEATING
PLANE
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
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9
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TSOP−5
SN SUFFIX
CASE 483−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
NOTE 5
5X
D
0.20 C A B
2X
2X
0.10
T
T
M
5
4
3
0.20
B
S
1
2
K
L
DETAIL Z
G
A
MILLIMETERS
DIM
A
B
C
D
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
J
0.90
1.10
0.50
C
0.25
SEATING
PLANE
0.05
G
H
J
K
L
M
S
0.95 BSC
H
0.01
0.10
0.20
1.25
0
0.10
0.26
0.60
1.55
10
3.00
T
_
_
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
10
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
−Z−
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
Micro8
DM SUFFIX
CASE 846A−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
0.05
0.25
0.13
2.90
2.90
NOM
−−
MAX
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
1.10
0.15
0.40
0.23
3.10
3.10
e
0.08
b 8 PL
0.33
M
S
S
0.08 (0.003)
T
B
A
0.18
3.00
E
3.00
0.118
e
L
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
SEATING
PLANE
H
−T−
E
A
0.038 (0.0015)
L
A1
c
SOLDERING FOOTPRINT*
1.04
0.38
8X
8X 0.041
0.015
3.20
4.24
5.28
0.126
0.167 0.208
0.65
6X0.0256
SCALE 8:1
mm
inches
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Micro8 is a trademark of International Rectifier.
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