NCV47823PAAJR2G [ONSEMI]
Dual High Side Switch with Adjustable Current Limit and Diagnostic Features;型号: | NCV47823PAAJR2G |
厂家: | ONSEMI |
描述: | Dual High Side Switch with Adjustable Current Limit and Diagnostic Features 驱动 光电二极管 接口集成电路 |
文件: | 总16页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCV47823
Dual High Side Switch with
Adjustable Constant Current
and Diagnostic Features
The NCV47823 is designed for using in harsh automotive
environments providing dual mode operation depending on the load
impedance: High Side Switch (HSS) or Constant Current Source
(CCS). In both modes of operation the current limit can be set up to
350 mA per channel by external resistor. The device has a high peak
input voltage tolerance and reverse input voltage, reverse bias,
overcurrent and overtemperature protections. The integrated current
sense feature (adjustable by resistor connected to CSO pin for each
channel) provides diagnosis and system protection functionality. The
CSO pin output current creates voltage drop across CSO resistor which
is proportional to output current of each channel. Extended diagnostic
features in OFF state are also available and controlled by dedicated
input and output pins.
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MARKING
DIAGRAM
14
NCV4
7823
ALYWG
G
TSSOP−14
Exposed Pad
CASE 948AW
14
1
1
A
L
= Assembly Location
= Wafer Lot
Y
W
G
= Year
= Work Week
= Pb−Free Package
Features
• Reduced Inrush Current (current value set by external resistor only)
• Adjustable Constant Current: up to 350 mA
• Two Independent Enable Inputs (3.3 V Logic Compatible)
• PWM Function of Enable Inputs Available
(Note: Microdot may be in either location)
ORDERING INFORMATION
• Protection Features:
See detailed ordering and shipping information on page 14 of
sheet.
♦ Current Limitation
♦ Thermal Shutdown
♦ Reverse Input Voltage and Reverse Bias Voltage
♦ Reduced Reverse Bias Current
• Diagnostic Features:
♦ Short To Battery (STB) and Open Load (OL) in OFF State
♦ Internal Components for OFF State Diagnostics
♦ Open Collector Flag Output
♦ Two Output Voltage Monitoring Outputs (Analog)
• AEC−Q100 Grade 1 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Typical Applications
• Audio and Infotainment System
• Active Safety System
• LED Lighting Systems
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2017 − Rev. 0
NCV47823/D
NCV47823
V
out1
V
in
C
in
Proportional Voltage to V
*
out1
1 μF
C
V
out1
out_FB1
1 μF
CSO1
EN1
R
CSO1
NCV47823
(Dual CCHSS)
Diagnostic Enable Input
Error Flag Output (Open Collector)
DE
CS
EF
Diagnostic Channel Select Input
V
out2
Proportional Voltage to V
*
out2
V
out_FB2
C
out2
1 μF
EN2
CSO2
GND
R
CSO2
Figure 1. Application Schematic
* V
out_FB1
and V
are sensed V
and V output voltages, respectively, via internal resistor dividers
out2
out_FB2
out1
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2
NCV47823
I
10 mA
PU1
IPU1_ON
V
in
V
out1
I
= I
/ RATIO*
CSO1 out1
VOLTAGE
REFERENCE
V
V
REF
R
PASS DEVICE 1
AND
CURRENT MIRROR
V
PD_EN1
REF
REF_OFF
+
−
780 kW
2.55 V
EN1
ENABLE
EN1
CSO1
SATURATION
PROTECTION
+
−
THERMAL
SHUTDOWN
OC1_ON
0.95x
PD1_ON
V
REF
R
PD_11
500 kW
+
−
V
out_FB1
STB1_OL1_OFF
R
PD_12
100 kW
V
R
REF_OFF
IPU1_ON
PD_CS
EN1
EN2
IPU2_ON
780 kW
DE
CS
PD1_ON
PD2_ON
R
PD_DE
DIAGNOSTIC
CONTROL
LOGIC
780 kW
EF
OC1_ON
OC2_ON
STB1_OL1_OFF
STB2_OL2_OFF
I
10 mA
PU2
IPU2_ON
V
out2
V
in
ICSO2 = I
/ RATIO*
REF
out2
R
PD_EN2
V
PASS DEVICE 2
AND
+
−
780 kW
2.55V
CURRENT MIRROR
ENABLE
EN2
EN2
CSO2
THERMAL
SHUTDOWN
+
−
SATURATION
PROTECTION
OC2_ON
0.95x
PD2_ON
V
REF
R
PD21
500 kW
+
−
V
out_FB2
STB2_OL2_OFF
R
PD22
GND
100 kW
V
REF_OFF
* for current value of RATIO see
into Electrical Characteristic Table
Figure 2. Simplified Block Diagram
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3
NCV47823
1
14
V
in
V
out1
CSO1
EN1
V
out_FB1
CS
EF
DE
EPAD
GND
EN2
V
CSO2
out_FB2
V
in
V
out2
TSSOP−14 EPAD
(Top View)
Figure 3. Pin Connections
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
TSSOP−14
EPAD
Pin Name
Description
Power Supply Input for Channel 1 and supply of control circuits of whole chip. At least 4.4 V
power supply must be used for proper IC functionality.
1
V
in
Current Sense Output 1, Current Limit setting and Output Current value information. See Appli-
cation Section for more details.
2
CSO1
Enable Input 1; low level disables the Channel 1. (Used also for OFF state diagnostics control
for Channel 1)
3
4
5
EN1
GND
EN2
Power Supply Ground.
Enable Input 2; low level disables the Channel 2. (Used also for OFF state diagnostics control
for Channel 2)
Current Sense Output 2, Current Limit setting and Output Current value information. See Appli-
cation Section for more details.
6
CSO2
7
8
V
Power Supply Input for Channel 2. Connect to pin 1 or different power supply rail.
Output Voltage 2.
in
V
out2
9
V
Output Voltage 2 Analog Monitoring. See Application Section for more details.
Diagnostic Enable Input.
out_FB2
10
11
DE
EF
Error Flag (Open Collector) Output. Active Low.
Channel Select Input for OFF state diagnostics. Set CS = Low for OFF state diagnostics of
Channel 1. Set CS = High for OFF state diagnostics of Channel 2. Corresponding EN pin has
to be used for diagnostics control (see Application Information section for more details).
12
CS
13
14
V
Output Voltage 1 Analog Monitoring. See Application Section for more details.
Output Voltage 1.
out_FB1
V
out1
EPAD
EPAD
Exposed Pad is connected to Ground. Connect to GND plane on PCB.
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NCV47823
Table 2. MAXIMUM RATINGS
Rating
Symbol
Min
−42
−
Max
45
Unit
V
Input Voltage DC
V
in
Input Voltage (Note 1)
U
60
V
s*
Load Dump − Suppressed
Enable Input Voltage
Output Voltage Monitoring
CSO Voltage
V
−42
−0.3
−0.3
−0.3
−1
45
10
7
V
V
EN1,2
V
out_FB1,2
V
V
CSO1,2
DE, CS and EF Voltages
Output Voltage
V
, V
V
7
V
DE
CS, EF
V
out1,2
40
150
150
V
Junction Temperature
Storage Temperature
T
J
−40
−55
°C
°C
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class A according to ISO16750−1.
Table 3. ESD CAPABILITY (Note 2)
Rating
Symbol
ESD
Min
Max
Unit
ESD Capability, Human Body Model
−2
2
kV
HBM
2. This device series incorporates ESD protection and is tested by the following methods.
ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010)
2
Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes < 50 mm due to
the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform
characteristic defined in JEDEC JS−002−2014.
Table 4. LEAD SOLDERING TEMPERATURE AND MSL (Note 3)
Rating
Moisture Sensitivity Level
Symbol
Min
Max
Unit
MSL
1
−
3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
Table 5. THERMAL CHARACTERISTICS (Note 4)
Rating
Symbol
Value
Unit
°C/W
Thermal Characteristics (single layer PCB)
Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)
R
θJA
R
ψJL
52
9.0
°C/W
Thermal Characteristics (4 layers PCB)
Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)
R
θJA
R
ψJL
31
10
4. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2
2
5. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate. Single layer * according to JEDEC51.3,
4 layers * according to JEDEC51.7
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5
NCV47823
Table 6. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
4.4
10
Max
40
Unit
V
Input Voltage (Note 6)
V
in
Output Current Limit (Note 7)
Junction Temperature
I
350
150
mA
°C
LIM1,2
T
J
−40
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Minimum V = 4.4 V or (V
+ 0.5 V), whichever is higher.
in
out1,2
7. Corresponding R
is in range from 67.5 kΩ down to 2040 Ω
CSO1,2
Table 7. ELECTRICAL CHARACTERISTICS V = 13.5 V, V
= 3.3 V, V = 0 V, R
= 0 Ω, C = 1 μF, C
= 1 μF, Min and Max
in
EN1,2
DE
CSO1,2
in
out1,2
values are valid for temperature range −40°C v T v +150°C unless noted otherwise and are guaranteed by test, design or statistical correlation. Typical
J
values are referenced to T = 25°C (Note 8)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
OUTPUTS
Input to Output Differential Voltage
V
= 8 V to 18 V
V
mV
in
in−out1,2
I
I
= 200 mA
= 250 mA
out1,2
out1,2
−
210
230
350
400
CURRENT LIMIT PROTECTION
Current Limit
V
out1,2
= V – 1 V
in
I
350
−
−
mA
LIM1,2
DISABLE AND QUIESCENT CURRENTS
Disable Current
V
I
= 0 V
I
−
−
−
−
5
0.85
15
20
1.5
25
40
μA
mA
mA
mA
EN1,2
DIS
Quiescent Current, I = I − (I
+I
)
)
)
= I
= 500 μA, V = 8 V to 18 V
I
q
q
in
out1 out2
out1
out1
out1
out2
out2
out2
in
Quiescent Current, I = I – (I
+I
I
I
= I
= I
= 200 mA, V = 8 V to 18 V
I
q
in
out1 out2
in
q
q
Quiescent Current, I = I – (I
+I
= 250 mA, V = 8 V to 18 V
I
20
q
in
out1 out2
in
ENABLE
Enable Input Threshold Voltage
V
V
th(EN1,2)
Logic Low (OFF)
Logic High (ON)
V
v 0.1 V
0.99
−
1.8
1.9
−
2.31
out1,2
V
out1,2
w V – 1 V
in
Enable Input Current
V
= 3.3 V
I
2
7
20
−
μA
μs
EN1,2
EN1,2
Turn On Time from
I
= 100 mA
t
on
out1,2
from Enable ON to V
= V – 1 V
25
out1,2
in
−
OUTPUT CURRENT SENSE
V
CSO_Ilim1,2
CSO Voltage Level at Current Limit
V
R
= V – 1 V
2.474
(−3 %)
2.55
2.626
(+3 %)
V
V
out1,2
in
= 3.3 kW
CSO1,2
CSO Transient Voltage Level
R
I
= 3.3 kW
V
CSO1,2
CSO1,2
−
−
3.3
pulse from 10 mA to 350 mA, t = 1μs
out1,2
r
265
V
V
= 2 V, I
= 10 mA to 50 mA
−
−
CSO1,2
in
out1,2
= 8 V to 18 V, −40°C v T v +150°C
(−15 %)
(+15 %)
J
285
280
−
V
V
= 2 V, I
= 50 mA to 200 mA
−
−
CSO1,2
in
out1,2
Output Current to CSO Current Ratio
I
/I
−
out1,2 CSO1,2
= 8 V to 18 V, −40°C v T v +150°C
(−5 %)
(+5 %)
J
V
V
= 2 V, I
= 200 mA to 350 mA
−
−
CSO1,2
in
out1,2
= 8 V to 18 V, −40°C v T v +150°C
(−5 %)
(+5 %)
J
CSO Current at no Load Current
REVERSE BIAS CURRENT
Reverse Current
V
V
V
= 0 V, I
= 0 mA
I
−
15
−
μA
CSO1,2
out1,2
CSO_off1,2
= 0 V, V
= 18 V, V
= 0 V
I
out_rev1,2
−2
−0.03
mA
in
out1,2
EN1,2
DIAGNOSTICS
Short to Ground (STG) Voltage
Threshold in ON State
= 4.4 V to 18 V
= 3.3 kW
V
2
2
3
3
4
4
V
V
in
STG1,2
R
CSO1,2
Short To Battery (STB) Voltage
Threshold in OFF state
V
V
= 4.4 V to 18 V, I
= 3.3 V
= I
out2
= 0 mA
V
STB1,2
in
DE
out1
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NCV47823
V
V
= 4.4 V to 18 V, V = 3.3 V
I
5.0
5.7
10
25
mA
−
Open Load (OL) Current Threshold in
OFF state
in
DE
OL1,2
= 4.4 V to 18 V
V
/V
6.0
6.3
Output Voltage to Output Feedback
Voltege Ratio
in
out1,2 out_FB1,2
V
V
V
th(DE)
Diagnostics Enable Threshold Voltage
Logic Low
Logic High
0.99
−
1.8
1.9
−
2.31
V
th(CS)
Channel Select Threshold Voltage
Logic Low
0.99
−
1.8
1.9
−
2.31
Logic High
Error Flag Low Voltage
I
I
= −1 mA
V
−
0.04
0.4
V
EF
EF_Low
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 9)
= I
out2
= 90 mA, each channel
T
SD1,2
150
175
195
°C
out1
measured separately
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T [ T . Low duty
A
J
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible
9. Values based on design and/or characterization.
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NCV47823
TYPICAL CHARACTERISTICS
400
400
350
V
in
= 13.5 V
V
in
= 13.5 V
I
= 350 mA
out1,2
350
300
250
200
150
100
T = 150°C
J
300
250
200
150
100
T = 25°C
J
I
= 200 mA
out1,2
T = −40°C
J
I
= 15 mA
out1,2
50
0
50
0
−40 −20
0
20 40 60 80 100 120 140 160
0
50
100
150
, OUTPUT CURRENT (mA)
out1,2
200
250 300
350 400
T , JUNCTION TEMPERATURE (°C)
J
I
Figure 4. Input to Output Differential Voltage
vs. Temperature
Figure 5. Input to Output Differential Voltage
vs. Output Current
950
900
850
800
750
700
650
600
550
500
0
−1
−2
−3
−4
T = 150°C
T = 25°C
J
J
R
= 3.3 kW
out1,2
T = 25°C
J
T = −40°C
J
−5
−6
V
out1,2
= (V − 1 V) V
in
−7
0
5
10
15
20
25
30
35
40
45
−45 −40 −35 −30 −25 −20 −15 −10 −5
0
V
IN
, INPUT VOLTAGE (V)
V , INPUT VOLTAGE (V)
IN
Figure 6. Output Current Limit vs. Input
Voltage
Figure 7. Input Current vs. Input Voltage
(Reverse Input Voltage)
400
350
300
3.0
2.5
2.0
1.5
1.0
T = −40°C to 150°C
LIM1,2
J
I
= 10 mA to 350 mA
250
200
150
100
0.5
0
50
0
0
10 20 30 40 50 60 70 80 90 100 110
, OUTPUT CURRENT (% of I
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
(kW)
I
)
LIM1,2
R
out1,2
CSO1,2
Figure 8. Output Current Limit vs. RCSO
Figure 9. CSO Voltage vs. Output Current
(% of ILIM
)
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NCV47823
TYPICAL CHARACTERISTICS
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
40
T = 25°C
in
T = 25°C
in
J
V
J
V
35
= 13.5 V
= 13.5 V
30
25
20
15
10
5
0
0
5
10
15
20
0
50
100
I , OUTPUT CURRENT (mA)
out1,2
150
200
250
300
350
I
, OUTPUT CURRENT (mA)
out1,2
Figure 10. Quiescent Current vs. Output
Current (Low Load)
Figure 11. Quiescent Current vs. Output
Current (High Load)
310
T = 25°C
in
305
300
295
290
285
280
275
270
265
J
V
= 13.5 V
260
255
250
10
100
, OUTPUT CURRENT (mA)
1000
I
out1,2
Figure 12. Output Current to CSO Current
Ratio vs. Output Current
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NCV47823
DEFINITIONS
General
Current Limit
Current Limit is value of output current by which output
voltage drops to or below V − 1 V value.
All measurements are performed using short pulse low
duty cycle techniques to maintain junction temperature as
close as possible to ambient temperature.
in
Thermal Protection
Input to Output Differential Voltage
Internal thermal shutdown circuitry is provided to protect
the integrated circuit in the event that the maximum junction
temperature is exceeded. When activated at typically
175_C, the regulator turns off. This feature is provided to
prevent failures from accidental overheating.
The Input to Output Differential Voltage parameter is
defined for specific output current values and specified over
Temperature range.
Quiescent and Disable Currents
Quiescent Current (I ) is the difference between the input
q
Maximum Package Power Dissipation
current (measured through the LDO input pin) and the
output load current. If Enable pin is set to LOW the regulator
reduces its internal bias and shuts off the output, this term is
The power dissipation level is maximum allowed power
dissipation for particular package or power dissipation at
which the junction temperature reaches its maximum
operating value, whichever is lower.
called the disable current (I ).
DIS
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NCV47823
APPLICATIONS INFORMATION
where
R
CSO1,2 − current limit setting resistor
Circuit Description
VCSO1,2 − voltage at CSO pin proportional to I
ILIM1,2 − current limit value
The NCV47823 is an integrated dual High Side Switch
(HSS) with current limit up to 350 mA per channel able to
operate in Constant Current Source (CCS) mode depending
on the output current load. The operation mode can be
expressed by equations as follows:
out1,2
I
out1,2 − output current actual value
RATIO − typical value of Output Current to CSO
Current Ratio for particular output current
range
(Vin * Vin*out1,2
)
(eq. 1)
HSSmode :
+ Iout1,2 t ILIM1,2
Rload1,2
CSO pin provides information about output current actual
value. The CSO voltage is proportional to output current
according to (eq. 3).
or
Once output current reaches its limit value (I
) set by
(Vin * Vin*out1,2
)
LIM1,2
CCSmode :
+ Iout1,2 + ILIM1,2 (eq. 2)
external resistor R
than voltage at CSO pin is typically
CSO
Rload1,2
2.55 V. Calculations of I
or R
values can be
LIM1,2
CSO1,2
where I
value is preset by R
. In HSS mode of
done using (eq. 6) and (eq. 7).
LIM1,2
CSO1,2
operation (eq. 1) output current I
may exceed I
LIM1,2
out1,2
VCSO1,2_min
ILIM1,2_min + RATIOmin
(eq. 6)
(reduced inrush current). Voltage on CSO pin is proportional
to output current. The operation mode with PWM function
of Enable inputs is provided by the circuit. The integrated
current sense features diagnosis and system protection
functionality. The HSS is protected by both current limit and
thermal shutdown. Thermal shutdown occurs above 150°C
to protect the IC during overloads and extreme ambient
temperatures.
RCSO1,2_max
VCSO1,2_max
(eq. 7)
ILIM1,2_max + RATIOmax
RCSO1,2_min
where:
RATIO – minimum value of Output Current to
min
CSO Current Ratio from electrical
characteristics table and particular output
current range
Enable Inputs
An enable pin is used to turn the channel on or off. By
holding the pin down to a voltage less than 0.99 V, the output
of the channel will be turned off. When the voltage on the
enable pin is greater than 2.31 V, the output of the channel
will be enabled to power its output to the regulated output
voltage. The enable pins may be connected directly to the
input pin to give constant enable to the output channel. As
mentioned above, the circuit allows using both Enable
inputs to obtain PWM of output current.
RATIO
– maximum value of Output Current to
max
CSO Current Ratio from electrical
characteristics table and particular output
current range
V
V
– minimum value of CSO Voltage Level
CSO1,2_min
at Current Limit from electrical characteristics
table
– maximum value of CSO Voltage Level
CSO1,2_max
Setting the Output Current Limit
The output current value can be set up to 350 mA by
external resistor R
at Current Limit from electrical characteristics
table
(see Figure 1).
CSO1,2
R
R
– minimum value of R
with
CSO1,2_min
CSO1,2
1
ǒ
Ǔ
respect its accuracy
VCSO1,2 + Iout1,2 RCSO1,2
(eq. 3)
(eq. 4)
RATIO
– maximum value of R
with
CSO1,2_max
CSO1,2
RATIO
2.55
respect its accuracy
ILIM1,2
+
1
RCSO1,2
2.55
Designers should consider the tolerance of R
during the design phase.
CSO1,2
RATIO
1
RCSO1,2
+
(eq. 5)
ILIM1,2
Diagnostic in OFF state
The NCV47823 contains also circuitry for OFF state
diagnostics for Short to Battery (STB) and Open Load (OL).
There are internal current sources and Pull Down resistors
providing additional cost savings for overall application by
excluding external components and their assembly cost and
saving PCB space and safe control IOs of a Microcontroller
Unit (MCU). Simplified functional schematic and truth
table is shown in Figure 13 and related flowchart in Figure
14.
The diagnostics in OFF state shall be performed for each
channel separately. For diagnostics of Channel 1 the input
CS pin has to be put logic low, for diagnostics of Channel 2
the input CS pin has to be put logic high. Corresponding EN
pin has to be used for control (EN1 for Channel 1 and EN2
for Channel 2).
www.onsemi.com
11
NCV47823
I
PU
Current source enabled via EN and DE pins
Start
PASS DEVICE is OFF in Diagnostics
Mode in OFF state
Diag. OFF. Set
EN = L & DE = L
V
out
V
in
R
PD1
Diag. ON. Set
EN = L & DE = H
+
Comparator active only in
Diagnostic state (DE = H).
EN
DE
−
R
PD2
V
REF_OFF
HZ
L
EF = ?
EF
Digital Diagnostic:
EN − Enable (Logic Input)
DE − Diagnostics Enable (Logic Input)
EF − Error Flag Output (Open Collector Output)
SPU ON. Set
EN = H & DE = H
to MCU’s digital input
with pull−up resistor
to MCU’s DIO supply rail
HZ
L
EN DE
I
EF
OFF HZ
OFF
OFF HZ
ON
ON HZ
V
Diagnostic Status/Action
EF = ?
PU
out
L
L
L
Unknown
V >V
out out_OFF
None (Diagnostic OFF)
Short to Battery (STB)
Check for Open Load (OL)
Open Load (OL)
H
H
H
H
L
L
V
<V
No Failure
Open Load
Short to Battery
out out_OFF
H
H
L
V
>V
out out_OFF
V
<V
No Failure (V
close to 0V)
_out
out out_OFF
Figure 13. Simplified Functional Diagram of OFF
State Diagnostics (STB and OL)
Figure 14. Flowchart for Diagnostics in OFF State
Diagnostic in ON state
Output Voltage Monitoring
The Output Voltage net is connected to internal resistor
divider. Output of the resistor divider is connected to
Diagnostic in ON State provides information about
Overcurrent or Short to Ground failures, during which the
EF output is in logic low state. The diagnostics in ON state
shall be performed for each channel separately. For
diagnostics of Channel 1 the input CS pin has to be put logic
low, for diagnostics of Channel 2 the input CS pin has to be
put logic high. For detailed information see Diagnostic
Features Truth Table in Table 8.
V
pin and provides information about Output
out_FB1,2
Voltage Level according to (eq. 8).
Vout1,2
(eq. 8)
Vout_FB1,2
+
6
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12
NCV47823
Table 8. DIAGNOSTIC FEATURES TRUTH TABLE
Output Channel
(V or V
Diagnostic Output
(CSO1 or CSO2)
Error Flag
(EF)
)
out2
Operational Status
Disabled
EN (note 10)
DE
L
CS
out1
L
L
X
Low (~0 V)
High(V ~V )
Low (~0 V)
Low (~0 V)
Low (~0 V)
Low (~0 V)
Low (~0 V)
HZ
L (Note 11)
L (Note 12)
HZ (Note 12)
HZ
Short to Battery (OFF)
Open Load (OFF)
Normal (OFF)
H
H
H
L
L/H (Note 13)
L/H (Note 13)
L/H (Note 13)
L/H (Note 13)
L/H (Note 13)
out
in
H
H
H
H
High(V ~V )
out in
Low (~0 V)
High(V ~V )
Open Load (ON)
Switch
out
in
L
I
<I
Proportional to I
HZ
out out_SET
out
(
5%) (Note 15)
Current Source
Short to Ground
H
H
L
L
L/H (Note 13)
L/H (Note 13)
I
=I
High (~2.55 V)
High (~2.55 V)
HZ
out out_SET
Low (~0 V)
L (Note 14)
10.State of EN pin of appropriate channel
11. Internal current source turned OFF (between V and V of appropriate channel)
out
in
12.Internal current source turned ON (between V and V of appropriate channel)
out
in
13.CS = L means CH1 diagnostics and CS = H means CH2 diagnostics (e.g. when CS = L and EF = L then failure at CH1 observed, when CS
= H and EF = L then failure at CH2 observed)
14.STG is considered as fault when V < 3 V
out
15.Valid for I = 50 mA to 350 mA. For I = 10 mA to 50 mA range proportional to I
( 15%).
out
out
out
Thermal Considerations
As power in the device increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
or
(eq. 11)
ǒ
Ǔ
ǒ
Ǔ
PD(MAX) ) Vout1 Iout1 ) Vout2 Iout2
Vin(MAX)
[
Iout1 ) Iout2 ) Iq
130
120
110
100
90
1 oz, Single Layer
ƪT
ƫ
J(MAX) * TA
80
(eq. 9)
PD(MAX)
+
RqJA
70
60
Since T is not recommended to exceed 150_C, then the
2 oz, Single Layer
J
2
device soldered on 645 mm , 1 oz copper area, FR4 can
50
40
dissipate up to 2.38 W when the ambient temperature (T )
A
1 oz, 4 Layer
2 oz, 4 Layer
200 300
COPPER HEAT SPREADER AREA (mm )
is 25_C. See Figure 15 for R
versus PCB area. The power
dissipated by the device can be calculated from the
θJA
30
20
0
100
400
500
600 700
following equations:
2
(eq. 10)
Figure 15. Thermal Resistance vs. PCB Copper Area
ǒ
Ǔ
ǒ
Ǔ
ǒ
Ǔ
PD [ Vin Iq@Iout1,2 ) Iout1 Vin−Vout1 ) Iout2 Vin−Vout2
www.onsemi.com
13
NCV47823
Hints
case of long PCB track or wire connected to CSO pin it is
V
and GND printed circuit board traces should be as
recommended to use RC filter for noise suppression (see
Figure 16 and Table 9) in cost of higher inrush current. The
R value of the RC filter can be higher than value listed in
Table 9, depending on acceptable of RC time constant. The
higher is R value the lower is inrush current. Value of C =
10 nF is optimized for noise suppression and as low as
possible inrush current.
in
wide as possible. When the impedance of these traces is
high, there is a chance to pick up noise or cause the regulator
to malfunction. Place external components, especially the
output capacitor, as close as possible to the device and make
traces as short as possible.
The Output Voltage Monitoring Output is high impedance
output (see Figure 2) and during OFF state diagnostics it
may be prone to couple a noise via PCB track or wire.
Disturbing may appear as Error Flag Output oscillation
when Output Voltage Level is close to Short to Battery
threshold. To improve robustness connect capacitor
(typically 10 nF) between each V
pin and GND as
out_FB1,2
close as possible to the V
pins.
out_FB1,2
The Current Sense Output is internally connected to an
input of error amplifier and may be prone to couple a noise
via long PCB track or wire (e.g. connection to an ADC). In
Figure 16. RF Filter Connection
Table 9. INRUSH CURRENT AND RECOMMENDED RC VALUES
(Test Conditions: V = 13.5 V, V = short to GND, V = pulse from 0 V to 5 V)
in
out
EN
Rcso (kW)
Calculated Current Limit Inrush Current without RC
minimum R (kW)
C (nF)
Inrush Current with RC
(mA) with minimum R
(mA) (Note 16)
(mA)
68
15
11
75
22
22
33
33
33
33
22
15
10
10
10
10
10
10
10
10
65
51
108
133
159
211
248
308
376
124
145
182
231
270
338
415
8.2
5.1
3.9
3.3
2.7
2.2
93
150
183
216
264
325
16.Calculated ILIM is for Vout = Vin − 1 V.
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NCV47823PAAJR2G
Line1: NCV4
Line2: 7823
TSSOP−14 EP
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−14 EP
CASE 948AW
ISSUE C
14
1
DATE 09 OCT 2012
SCALE 1:1
NOTES:
NOTE 6
B
14
8
b
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
b1
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL BE
0.07 mm MAX. AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER RADI-
US OF THE FOOT. MINIMUM SPACE BETWEEN PRO-
TRUSION AND ADJACENT LEAD IS 0.07.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 mm PER SIDE. DIMENSION D IS DETERMINED AT
DATUM H.
c1
E1
e
E
NOTE 5
SECTION B−B
c
NOTE 8
PIN 1
1
7
0.20 C B A
REFERENCE
2X 14 TIPS
5. DIMENSION E1 DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSIONS. INTERLEAD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.25 mm PER
SIDE. DIMENSION E1 IS DETERMINED AT DATUM H.
6. DATUMS A AND B ARE DETERMINED AT DATUM H.
7. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM
THE SEATING PLANE TO THE LOWEST POINT ON THE
PACKAGE BODY.
TOP VIEW
NOTE 6
A
D
A2
NOTE 4
A
DETAIL A
0.05 C
B
M
0.10 C
8. SECTION B−B TO BE DETERMINED AT 0.10 TO 0.25 mm
FROM THE LEAD TIP.
14X
b
0.10 C B
S
S
C
SEATINGc
PLANE
14X
A
MILLIMETERS
NOTE 3
B
DIM MIN
MAX
1.20
0.15
1.05
0.30
0.25
0.20
0.16
5.10
3.62
END VIEW
A
A1
A2
b
b1
c
c1
D
D2
E
−−−−
0.05
0.80
0.19
0.19
0.09
0.09
4.90
3.09
SIDE VIEW
D2
H
L2
6.40 BSC
E2
E1
E2
e
4.30
2.69
0.65 BSC
4.50
3.22
A1
NOTE 7
L
GAUGE
PLANE
C
DETAIL A
L
L2
M
0.45
0
0.75
0.25 BSC
8
_
_
BOTTOM VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
14X
14
3.40
1.15
XXXX
XXXX
ALYWG
G
1
3.06
6.70
XXXX = Specific Device Code
A
L
= Assembly Location
= Wafer Lot
Y
W
G
= Year
= Work Week
= Pb−Free Package
1
14X
0.42
0.65
PITCH
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON66474E
TSSOP−14 EP, 5.0X4.4
PAGE 1 OF 1
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