NCV8130 [ONSEMI]

Very Low Dropout Bias Rail CMOS Voltage Regulator;
NCV8130
型号: NCV8130
厂家: ONSEMI    ONSEMI
描述:

Very Low Dropout Bias Rail CMOS Voltage Regulator

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中文:  中文翻译
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NCV8130  
300 mA, Very Low Dropout  
Bias Rail CMOS Voltage  
Regulator  
The NCV8130 is a 300 mA VLDO equipped with NMOS pass  
transistor and a separate bias supply voltage (V ). The device  
BIAS  
www.onsemi.com  
provides very stable, accurate output voltage with low noise suitable  
for space constrained, noise sensitive applications. In order to  
optimize performance for battery operated portable applications, the  
T
MARKING  
DIAGRAM  
NCV8130 features low I consumption. The XDFN6 1.2 mm x  
Q
1.2 mm package is optimized for use in space constrained  
applications.  
XDFN6  
CASE 711AT  
XX M  
Features  
Input Voltage Range: 0.8 V to 5.5 V  
Bias Voltage Range: 2.4 V to 5.5 V  
Fixed Output Voltage Device  
Output Voltage Range: 0.8 V to 2.1 V  
XX = Specific Device Code  
M
= Date Code  
PIN CONNECTIONS  
1.5% Accuracy over Temperature, 0.5% V  
@ 25°C  
OUT  
Ultra−Low Dropout: 150 mV Maximum at 300 mA  
Very Low Bias Input Current of Typ. 80 mA  
Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA  
Logic Level Enable Input for ON/OFF Control  
Output Active Discharge Option Available  
Stable with a 1 mF Ceramic Capacitor  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to  
+125°C Ambient Operating Temperature Range  
OUT  
NC  
IN  
1
2
3
6
5
4
Thermal  
Pad  
GND  
BIAS  
EN  
(Top VIew)  
These are Pb−Free Devices  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
Typical Applications  
page 9 of this data sheet.  
Automotive, Consumer and Industrial Equipment Point of Load  
Regulation  
Battery−powered Equipment  
FPGA, DSP and Logic Power Supplies  
Switching Power Supply Post Regulation  
Cameras, DVRs, STB and Camcorders  
V
BIAS  
2.7 V  
NCV8130  
100 nF  
BIAS  
IN  
OUT  
V
OUT  
1.0 V @ 300 mA  
V
1.3 V  
IN  
1 mF  
1 mF  
EN  
GND  
V
EN  
Figure 1. Typical Application Schematics  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2017 − Rev. 0  
NCV8130/D  
NCV8130  
CURRENT  
LIMIT  
OUT  
IN  
ENABLE  
BLOCK  
EN  
UVLO  
BIAS  
150 W  
VOLTAGE  
REFERENCE  
+
THERMAL  
LIMIT  
*Active  
DISCHARGE  
GND  
*Active output discharge function is present only in NCV8130AMXyyyTCG devices.  
yyy denotes the particular output voltage option.  
Figure 2. Simplified Schematic Block Diagram  
PIN FUNCTION DESCRIPTION  
Pin No.  
Pin Name  
OUT  
N/C  
Description  
1
2
Regulated Output Voltage pin  
Not internally connected (Note 1)  
3
EN  
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode.  
Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage Lockout Circuit.  
Ground pin  
4
BIAS  
GND  
IN  
5
6
Input Voltage Supply pin  
Pad  
Should be soldered to the ground plane for increased thermal performance.  
1. True no connect. Printed circuit board traces are allowable  
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2
 
NCV8130  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Input Voltage (Note 2)  
V
IN  
−0.3 to 6  
Output Voltage  
V
OUT  
−0.3 to (V +0.3) 6  
V
IN  
Chip Enable and Bias Input  
Output Short Circuit Duration  
Maximum Junction Temperature  
Storage Temperature  
V
V
−0.3 to 6  
unlimited  
150  
V
EN, BIAS  
t
s
SC  
T
J
°C  
°C  
V
T
−55 to 150  
2000  
STG  
ESD Capability, Human Body Model (Note 3)  
ESD Capability, Machine Model (Note 3)  
ESD  
HBM  
ESD  
200  
V
MM  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
3. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:  
ESD Human Body Model tested per AEC−Q100−002  
ESD Machine Model tested per AEC−Q100−003  
Latchup Current Maximum Rating 150 mA per AEC−Q100−004.  
RECOMMENDED OPERATING CONDITIONS  
Rating  
Symbol  
Min  
Max  
5.5  
Unit  
V
Input Voltage  
V
IN  
(V  
OUT  
+ V  
)
DO_IN  
Bias Voltage  
V
BIAS  
(V  
OUT  
+ 1.35) 2.4  
5.5  
V
Junction Temperature  
T
J
−40  
+125  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Thermal Characteristics, XDFN6 1.2 mm x 1.2 mm Thermal Resistance, Junction−to−Air  
RqJA  
170  
°C/W  
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3
 
NCV8130  
ELECTRICAL CHARACTERISTICS  
−40°C T 125°C; V  
= 2.7 V or (V  
+ 1.6 V), whichever is greater, V = V  
= 1 mF (effective capacitance) (Note 4). Typical values are at T = +25°C. Min/Max  
OUT J  
+ 0.3 V, I  
= 1 mA, V = 1 V, unless  
J
BIAS  
OUT  
= 0.1 mF, C  
IN  
OUT(NOM)  
OUT EN  
otherwise noted. C = 1 mF, C  
IN  
BIAS  
values are for −40°C T 125°C unless otherwise noted. (Note 5)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Operating Input  
Voltage Range  
V
IN  
V +V  
OUT DO  
5.5  
V
Operating Bias Voltage  
Range  
V
(V  
+1.35)  
2.4  
5.5  
V
V
BIAS  
OUT  
Undervoltage Lock−out  
V
Rising  
UVLO  
1.6  
0.2  
BIAS  
Hysteresis  
Output Voltage  
Accuracy  
−40°C T 125°C, V  
+ 0.3 V V  
V
OUT  
−1.5  
+1.5  
%
J
OUT(NOM)  
IN  
5.0 V, 2.7 V or (V  
+ 1.6 V), whichever is  
OUT(NOM)  
greater < V  
< 5.5 V, 1 mA < I  
< 300 mA  
BIAS  
OUT  
Output Voltage  
Accuracy  
V
OUT  
0.5  
%
V
V
Line Regulation  
V
+ 0.3 V V 5.0 V  
Line  
Line  
0.01  
0.01  
%/V  
%/V  
IN  
OUT(NOM)  
IN  
Reg  
Line Regulation 2.7 V or (V  
+ 1.6 V), whichever is  
OUT(NOM)  
BIAS  
Reg  
greater < V  
5.5 V  
BIAS <  
Load Regulation  
I
I
I
= 1 mA to 300 mA  
= 300 mA (Note 6)  
Load  
1.5  
75  
mV  
mV  
V
OUT  
OUT  
OUT  
Reg  
V
V
Dropout Voltage  
V
V
175  
1.4  
IN  
DO  
Dropout Voltage  
= 300 mA, V = V  
(Notes 6, 7)  
1.1  
550  
80  
BIAS  
IN  
BIAS  
DO  
CL  
Output Current Limit  
V
V
= 90% V  
= 2.7 V  
I
400  
950  
110  
mA  
mA  
OUT  
BIAS  
OUT(NOM)  
Bias Pin Operating  
Current  
I
BIAS  
Bias Pin Disable  
Current  
V
V
0.4 V  
0.4 V  
I
0.5  
0.5  
1.5  
1.5  
mA  
mA  
V
EN  
EN  
BIAS(DIS)  
Vinput Pin Disable  
Current  
I
VIN(DIS)  
EN Pin Threshold  
Voltage  
EN Input Voltage “H”  
EN Input Voltage “L”  
V
EN(H)  
0.9  
V
EN(L)  
0.4  
1.5  
EN Pull Down Current  
Turn−On Time  
V
EN  
= 5.5 V  
I
0.3  
mA  
ms  
EN  
C
V
= 1 mF, From assertion of V to  
= 98% V  
t
150  
OUT  
OUT  
EN  
ON  
, V  
= 1.0 V  
OUT(NOM) OUT(NOM)  
Power Supply  
Rejection Ratio  
V
to V  
, f = 1 kHz, I  
+0.5 V  
= 300 mA,  
PSRR(V )  
IN  
65  
80  
40  
dB  
dB  
IN  
OUT  
OUT  
OUT  
VIN V  
V
to V  
OUT  
, f = 1 kHz, I  
= 300 mA,  
= 1.0 V,  
PSRR(V  
)
BIAS  
VIN V  
OUT  
OUT  
BIAS  
+0.5 V  
Output Noise Voltage  
V
IN  
= V  
+0.5 V, V  
V
N
mV  
RMS  
OUT  
OUT(NOM)  
f = 10 Hz to 100 kHz  
Thermal Shutdown  
Threshold  
Temperature increasing  
Temperature decreasing  
160  
140  
150  
°C  
Output Discharge  
Pull−Down  
V
EN  
0.4 V, V  
= 0.5 V,  
R
DISCH  
W
OUT  
NCV8130A options only  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Effective capacitance, including the effect of DC bias, tolerance and temperature. See the Application Information section for more  
information.  
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.  
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.  
6. Dropout voltage is characterized when V  
falls 3% below V  
.
OUT  
OUT(NOM)  
7. For output voltages below 0.9 V, V  
dropout voltage does not apply due to a minimum Bias operating voltage of 2.4 V.  
BIAS  
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4
 
NCV8130  
APPLICATIONS INFORMATION  
2.6 V − 4.2 V  
VBAT  
NCV8130  
EN  
DC/DC  
GND  
1.0 V  
1.3 V V  
OUT(NOM)  
BIAS  
OUT  
1.3 V  
LX  
FB  
IN  
IN  
EN  
LOAD  
GND  
Processor  
I/O  
I/O  
To other circuits  
Figure 3. Typical Application: Low−Voltage Post−Regulator with ON/OFF functionality  
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5
NCV8130  
TYPICAL CHARACTERISTICS  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.7 V, V = V  
, V  
= 1.0 V, I  
= 300 mA,  
J
IN  
OUT(TYP)  
BIAS  
EN  
BIAS  
OUT(NOM)  
OUT  
C
= 1 mF, C  
= 0.1 mF, and C = 1 mF (effective capacitance), unless otherwise noted.  
OUT  
IN  
BIAS  
300  
100  
90  
80  
70  
60  
50  
40  
30  
20  
I
= 300 mA  
OUT  
+125°C  
250  
200  
150  
100  
+85°C  
+25°C  
−40°C  
+125°C  
+85°C  
+25°C  
−40°C  
50  
0
10  
0
0
50  
100  
150  
200  
250  
300  
0.5 1.0  
1.5  
2.0  
2.5  
− V  
3.0  
3.5  
4.0 4.5  
I
, OUTPUT CURRENT (mA)  
V
(V)  
OUT  
BIAS  
OUT  
Figure 4. VIN Dropout Voltage vs. IOUT and  
Temperature TJ  
Figure 5. VIN Dropout Voltage vs. (VBIAS  
V
OUT) and Temperature TJ  
200  
180  
1400  
1300  
1200  
1100  
1000  
I
= 100 mA  
OUT  
−40°C  
160  
140  
120  
100  
80  
+25°C  
+125°C  
+125°C  
+85°C  
+85°C  
60  
+25°C  
−40°C  
40  
900  
800  
20  
0
0.5 1.0  
1.5  
2.0  
2.5  
− V  
3.0  
3.5  
4.0  
4.5  
0
50  
100  
150  
200  
250  
300  
V
BIAS  
(V)  
I
OUT  
, OUTPUT CURRENT (mA)  
OUT  
Figure 6. VIN Dropout Voltage vs. (VBIAS  
VOUT) and Temperature TJ  
Figure 7. VBIAS Dropout Voltage vs. IOUT and  
Temperature TJ  
140  
200  
180  
120  
100  
80  
160  
140  
120  
100  
80  
+125°C  
+85°C  
+125°C  
+85°C  
60  
+25°C  
−40°C  
60  
40  
+25°C  
40  
−40°C  
20  
0
20  
0
0
50  
100  
150  
200  
250  
300  
2.0  
2.5  
3.0  
3.5  
4.0  
(V)  
4.5  
5.0  
5.5  
I
, OUTPUT CURRENT (mA)  
V
BIAS  
OUT  
Figure 8. BIAS Pin Current vs. IOUT and  
Temperature TJ  
Figure 9. BIAS Pin Current vs. VBIAS and  
Temperature TJ  
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6
NCV8130  
TYPICAL CHARACTERISTICS  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.7 V, V = V  
, V  
= 1.0 V, I  
= 300 mA,  
J
IN  
OUT(TYP)  
BIAS  
EN  
BIAS  
OUT(NOM)  
OUT  
C
= 1 mF, C  
= 0.1 mF, and C  
= 1 mF (effective capacitance), unless otherwise noted.  
IN  
BIAS  
OUT  
800  
700  
600  
500  
400  
300  
200  
+125°C  
+85°C  
+25°C  
−40°C  
100  
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
− V (V)  
V
BIAS  
OUT  
Figure 10. Current Limit vs. (VBIAS − VOUT  
)
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7
NCV8130  
APPLICATIONS INFORMATION  
The NCV8130 dual−rail very low dropout voltage  
regulator is using NMOS pass transistor for output voltage  
regulation from V voltage. All the low current internal  
best performance all the capacitors should be connected to  
the NCV8130 respective pins directly in the device PCB  
copper layer, not through vias having not negligible  
impedance.  
IN  
controll circuitry is powered from the V  
voltage.  
BIAS  
The use of an NMOS pass transistor offers several  
advantages in applications. Unlike a PMOS topology  
devices, the output capacitor has reduced impact on loop  
When using small ceramic capacitor, their capacitance is  
not constant but varies with applied DC biasing voltage,  
temperature and tolerance. The effective capacitance can be  
much lower than their nominal capacitance value, most  
importantly in negative temperatures and higher LDO  
output voltages. That is why the recommended Output  
capacitor capacitance value is specified as Effective value in  
the specific application conditions.  
stability. V to V  
operating voltage difference can be  
IN  
OUT  
very low compared with standard PMOS regulators in very  
low V applications.  
IN  
The NCV8130 offers smooth monotonic start-up. The  
controlled voltage rising limits the inrush current.  
The Enable (EN) input is equipped with internal  
hysteresis.  
Enable Operation  
The enable pin will turn the regulator on or off. The  
threshold limits are covered in the electrical characteristics  
table in this data sheet. If the enable function is not to be used  
NCV8130 is a Fixed Voltage linear regulator.  
Dropout Voltage  
Because of two power supply inputs V and V  
and  
then the pin should be connected to V or V  
.
IN  
BIAS  
IN  
BIAS  
one V  
regulator output, there are two Dropout voltages  
OUT  
Current Limitation  
specified.  
The first, the V Dropout voltage is the voltage  
difference (V – V  
The internal Current Limitation circuitry allows the  
device to supply the full nominal current and surges but  
protects the device against Current Overload or Short.  
IN  
) when V  
starts to decrease by  
IN  
OUT  
OUT  
percents specified in the Electrical Characteristics table.  
is high enough, specific value is published in the  
V
BIAS  
Thermal Protection  
Electrical Characteristics table.  
The second, V dropout voltage is the voltage  
difference (V  
Internal thermal shutdown (TSD) circuitry is provided to  
protect the integrated circuit in the event that the maximum  
junction temperature is exceeded. When TSD activated , the  
regulator output turns off. When cooling down under the low  
temperature threshold, device output is activated again. This  
TSD feature is provided to prevent failures from accidental  
overheating.  
BIAS  
– V  
) when V and V  
pins are  
BIAS  
OUT  
IN  
BIAS  
joined together and V  
starts to decrease.  
OUT  
Input and Output Capacitors  
The device is designed to be stable for ceramic output  
capacitors with Effective capacitance in the range from 1 mF  
to 10 mF. The device is also stable with multiple capacitors  
in parallel, having the total effective capacitance in the  
specified range.  
In applications where no low input supplies impedance  
available (PCB inductance in V and/or V  
example), the recommended C = 1 mF and C  
or greater. Ceramic capacitors are recommended. For the  
Power Dissipation  
The maximum power dissipation supported by the device  
is dependent upon board design and layout. Mounting pad  
configuration on the PCB, the board material, and the  
ambient temperature affect the rate of junction temperature  
rise for the part. For reliable operation, junction temperature  
should be limited to +125°C.  
inputs as  
IN  
BIAS  
= 0.1 mF  
IN  
BIAS  
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8
NCV8130  
ORDERING INFORMATION  
Nominal  
Output  
Voltage  
Device  
NCV8130BMX080TCG  
NCV8130BMX100TCG  
NCV8130BMX110TCG  
NCV8130BMX120TCG  
NCV8130BMX130TCG  
NCV8130BMX150TCG  
NCV8130BMX180TCG  
Marking  
Option  
Package  
Shipping  
0.80 V  
1.00 V  
1.10 V  
1.20 V  
1.30 V  
1.50 V  
1.80 V  
NL  
NF  
NG  
NA  
NC  
ND  
NE  
XDFN6  
(Pb−Free)  
Non−Active Discharge  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-  
cifications Brochure, BRD8011/D.  
To order other package and voltage variants, please contact your ON sales representative.  
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9
NCV8130  
PACKAGE DIMENSIONS  
XDFN6 1.20x1.20, 0.40P  
CASE 711AT  
ISSUE C  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO THE PLATED  
TERMINALS.  
D
A
B
4. COPLANARITY APPLIES TO THE PAD AS  
WELL AS THE TERMINALS.  
PIN ONE  
REFERENCE  
MILLIMETERS  
E
DIM  
A
MIN  
0.30  
0.00  
0.13  
1.15  
0.84  
1.15  
0.20  
TYP  
0.37  
0.03  
0.18  
1.20  
0.94  
1.20  
MAX  
0.45  
0.05  
0.23  
1.25  
1.04  
1.25  
0.40  
A1  
b
D
L
D2  
E
TOP VIEW  
DETAIL A  
0.30  
0.40 BSC  
E2  
e
OPTIONAL  
A
CONSTRUCTION  
L
0.15  
0.00  
0.20  
0.05  
0.25  
0.10  
0.05  
0.05  
C
C
L1  
A1  
RECOMMENDED  
MOUNTING FOOTPRINT*  
SEATING  
PLANE  
NOTE 4  
C
SIDE VIEW  
D2  
6X  
0.37  
1.08  
PACKAGE  
OUTLINE  
6X  
L1  
E2  
1
3
1.40  
0.40  
1
6X  
L
0.40  
PITCH  
6X  
0.24  
DIMENSIONS: MILLIMETERS  
6
4
DETAIL A  
6X b  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
e
M
0.10  
C A B  
BOTTOM VIEW  
NOTE 3  
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Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NCV8130/D  

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