NCV8187AML180TAG [ONSEMI]

Voltage Regulator - Low Iq, Low Dropout, Power Good Output 1.2 A;
NCV8187AML180TAG
型号: NCV8187AML180TAG
厂家: ONSEMI    ONSEMI
描述:

Voltage Regulator - Low Iq, Low Dropout, Power Good Output 1.2 A

光电二极管 输出元件 调节器
文件: 总12页 (文件大小:278K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Voltage Regulator - Low Iq,  
Low Dropout, Power Good  
Output  
1.2 A  
NCV8187  
The NCV8187 is 1.2 A LDO Linear Voltage Regulator. It is a very  
stable and accurate device with low quiescent current consumption  
(typ. 30 mA over the full temperature range), low dropout, low output  
noise and very good PSRR. The regulator incorporates several  
protection features such as Thermal Shutdown, Soft Start, Current  
Limiting and also Power Good Output signal for easy MCU  
interfacing.  
www.onsemi.com  
1
WDFN6/WDFNW6 2x2  
DFN6/DFNW6 3x3  
CASES 511BR & 511DW CASES 506DK & 507AW  
Features  
Operating Input Voltage Range: 1.5 V to 5.5 V  
Adjustable and Fixed Voltage Options Available: 0.8 V to 5.2 V  
Low Quiescent Current: typ. 30 mA over Temperature  
MARKING DIAGRAMS  
XXXXX  
XXMG  
2% Accuracy Over Full Load, Line and Temperature variations  
ALYWG  
G
G
PSRR: 75 dB at 1 kHz  
Low Noise: typ. 15 mV  
2x2 Packages  
3x3 Packages  
from 10 Hz to 100 kHz  
RMS  
XXXXX = Specific Device Code  
Stable With Small 10 mF Ceramic Capacitor  
Softstart to Reduce Inrush Current and Overshoots  
Thermal Shutdown and Current Limit Protection  
Power Good Signal Extends Application Range  
M
A
L
Y
W
G
= Month Code  
= Assembly Location  
= Wafet Lot  
= Year  
= Work Week  
= PbFree Package  
Available in WDFN6 and WDFNW6 2x2, DFN6 3x3, DFNW6 3x3  
with Wettable Flank (pin edge plating)  
(Note: Microdot may be in either location)  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
PIN CONNECTIONS  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
Wireless Chargers and Portable Equipment  
Smart Camera and Robotic Vision Systems  
Telecommunication and Networking Systems  
Infotainment and Cluster  
WDFN6, WDFNW6 2x2 mm  
(Top View)  
Modular Platforms for Dashboard Display  
Internet Connection Sharing (ICS) Gateway Server Applications  
General Purpose Automotive  
V
V
OUT  
IN  
IN  
OUT  
SNS  
NCV8187  
GND  
DFN6, DFNW6 3x3 mm  
(Top View)  
C
C
10 mF  
Ceramic  
1 mF  
Ceramic  
IN  
OUT  
PG  
EN  
ON  
OFF  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Figure 1. Typical Application Schematic  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
August, 2020 Rev. 2  
NCV8187/D  
NCV8187  
PIN FUNCTION DESCRIPTION  
Pin No.  
Pin No.  
Pin  
(2x2 Pkgs) (3x3 Pkgs) Name  
Description  
1
6
6
4
IN  
Input pin. A small capacitor is needed from this pin to ground to assure stability  
OUT  
Regulated output voltage pin. A small 10 mF ceramic capacitor is needed from this pin to ground to  
assure stability  
3, EXP  
2
2, EXP  
1
GND  
EN  
Power supply ground  
Enable pin. Driving this pin high turns on the regulator. Driving EN pin low puts the regulator into  
shutdown mode  
5
4
3
5
SNS  
PG  
Sense pin. Connect this pin to regulated output voltage  
Power Good, open collector. Use 10 kΩ to 100 kΩ pullup resistor connected to output or input voltage  
No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected  
NC  
ABSOLUTE MAXIMUM RATINGS  
Ratings  
Input Voltage (Note 1)  
Symbol  
Value  
0.3 to 6  
0.3 to 6  
30  
Unit  
V
V
IN  
EN  
PG  
Enable Voltage  
V
V
Power Good Current  
I
mA  
V
Power Good Voltage  
V
PG  
0.3 to 6  
Output Voltage  
V
OUT  
0.3 to V + 0.3 (max. 5.5)  
V
IN  
Output Short Circuit Duration  
Maximum Junction Temperature  
Storage Temperature  
t
Indefinite  
150  
s
SC  
T
°C  
°C  
V
J(MAX)  
T
STG  
55 to 150  
2000  
ESD Capability, Human Body Model (Note 2)  
ESD Capability, Machine Model (Note 2)  
ESD  
HBM  
ESD  
200  
V
MM  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per AECQ100002 (EIA/JESD22A114)  
ESD Machine Model tested per AECQ100003 (EIA/JESD22A115)  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Thermal Characteristics, WDFN6, 2x2, 0.65 Pitch Package  
Thermal Resistance, JunctiontoAmbient (Note 3)  
Thermal Resistance, JunctiontoCase (top)  
R
51  
142  
7.8  
125  
2.0  
7.7  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
q
JA  
R
q
JC(top)  
Thermal Resistance, JunctiontoCase (bottom) (Note 4)  
Thermal Resistance, JunctiontoBoard  
R
q
JC(bot)  
R
q
JB  
Characterization Parameter, JunctiontoTop  
Y
JT  
JB  
Characterization Parameter, JunctiontoBoard  
Thermal Characteristics, DFN6 / DFNW6, 3x3, 0.95 Pitch Packages  
Thermal Resistance, JunctiontoAmbient (Note 3)  
Thermal Resistance, JunctiontoCase (top)  
Y
R
50  
142  
7.9  
125  
2.0  
7.5  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
q
JA  
R
R
q
q
JC(top)  
JC(bot)  
Thermal Resistance, JunctiontoCase (bottom) (Note 4)  
Thermal Resistance, JunctiontoBoard  
R
q
JB  
Characterization Parameter, JunctiontoTop  
Y
JT  
JB  
Characterization Parameter, JunctiontoBoard  
Y
3. The junctiontoambient thermal resistance under natural convection is obtained in a simulation on a highK board, following the JEDEC51.7  
guidelines with assumptions as above, in an environment described in JESD512a.  
4. The junctiontocase (bottom) thermal resistance is obtained by simulating a cold plate test on the IC exposed pad. Test description can  
be found in the ANSI SEMI standard G3088.  
www.onsemi.com  
2
 
NCV8187  
ELECTRICAL CHARACTERISTICS (40°C T 150°C; VIN = V  
+1.0 V; I  
= 10 mA, C = 1 mF, C = 10 mF, unless  
OUT  
J
OUT  
OUT  
IN  
otherwise noted. Typical values are at T = +25°C. (Note 6))  
J
Parameter  
Test Conditions  
Symbol  
Min  
1.5  
Typ  
Max  
5.5  
Unit  
V
Operating Input Voltage  
Output Voltage Accuracy  
VIN  
40°C T 150°C,  
V
V
< 1.7 V  
V
OUT  
35 mV  
2 %  
+35 mV  
+2 %  
V
J
OUT  
V
+1 V < V < 5.5 V,  
OUT  
IN  
1.7 V  
0 mA < I  
< 1.2 A  
OUT  
OUT  
Reference Voltage  
Line Regulation  
Load Regulation  
Dropout voltage  
V
0.8  
40  
V
REF  
V
+ 1 V V 5.5 V, I  
= 1 mA  
Reg  
mV/V  
OUT  
IN  
OUT  
LINE  
LOAD  
DO  
I
= 0 mA to 1.2 A  
Reg  
2
mV/mA  
OUT  
V
OUT  
= V – (V  
– 3%)  
1.2 V – 1.4 V  
1.5 V – 1.7 V  
1.8 V – 2.7 V  
2.8 V – 3.2 V  
3.3 V – 4.9 V  
5 V  
V
325  
240  
200  
165  
150  
120  
1750  
1850  
0.1  
30  
495  
400  
335  
250  
220  
180  
mV  
DO  
IN  
OUT(NOM)  
I
= 1.2 A  
Maximum Output Current  
Short Circuit Current  
Disable Current  
(Note 7)  
(Note 7)  
I
1300  
mA  
mA  
mA  
OUT  
I
SC  
V
= 0 V  
I
5.0  
45  
EN  
OUT  
OUT  
DIS  
Quiescent Current  
Ground current  
I
I
= 0 mA  
= 1.2 A  
I
Q
mA  
I
2
mA  
dB  
GND  
Power Supply Rejection  
Ratio  
V
V
OUT  
= 3.5 V + 100 mVpp  
f = 1 kHz  
PSRR  
75  
IN  
OUT  
= 2.5 V  
= 10 mA, C  
I
= 1 mF  
OUT  
Output Noise Voltage  
VOUT = 1.8 V, IOUT = 10 mA  
f = 10 Hz to 100 kHz  
V
N
15  
mV  
rms  
Enable Input Threshold  
Voltage  
Voltage increasing  
Voltage decreasing  
V
0.9  
V
EN_HI  
V
0.3  
EN_LO  
EN Pin Current  
V
V
= 5.5 V  
100  
120  
nA  
EN  
Active Output Discharge  
Resistance  
= 5.5 V, V = 0 V  
R
DIS  
W
IN  
EN  
Power Good, Output  
Voltage Raising  
V
92  
80  
%
%
V
PGup  
PGdw  
Power Good, Output  
Voltage Falling  
V
Power Good Output  
Voltage Low  
I
= 6 mA, Open drain  
V
0.14  
170  
15  
0.4  
PG  
PGlo  
Thermal Shutdown  
Temperature (Note 5)  
Temperature increasing from T = +25°C  
T
°C  
°C  
J
SD  
Thermal Shutdown  
Hysteresis (Note 5)  
Temperature falling from TSD  
T
SDH  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
5. Guaranteed by design and characterization.  
6. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at T = T  
J
A
= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.  
7. Respect SOA.  
www.onsemi.com  
3
 
NCV8187  
TYPICAL CHARACTERISTICS  
1.220  
1.215  
1.210  
1.205  
1.200  
1.195  
1.820  
V
I
C
= 2.2 V  
= 1 mA  
V
I
C
= 2.8 V  
= 1 mA  
IN  
IN  
1.815  
1.810  
1.805  
1.800  
1.795  
1.790  
OUT  
OUT  
= 10 mF  
= 10 mF  
OUT  
OUT  
1.190  
1.785  
1.780  
1.185  
1.180  
40 20  
0
20  
40  
60  
80 100 120 140  
40 20  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 2. Output Voltage vs. Temperature –  
OUT = 1.2 V  
Figure 3. Output Voltage vs. Temperature –  
VOUT = 1.8 V  
V
3.320  
3.315  
3.310  
3.305  
3.300  
3.295  
3.290  
450  
425  
400  
375  
350  
325  
300  
275  
250  
V
I
C
= 4.3 V  
= 1 mA  
IN  
V
= 1.2 V  
= 1.2 A  
= 10 mF  
OUT  
OUT  
I
OUT  
= 10 mF  
OUT  
C
OUT  
3.285  
3.280  
225  
200  
40 20  
0
20  
40  
60  
80 100 120 140  
40 20  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 4. Output Voltage vs. Temperature –  
OUT = 3.3 V  
Figure 5. Dropout Voltage vs. Temperature –  
VOUT = 1.2 V  
V
325  
300  
275  
250  
225  
200  
175  
150  
125  
240  
220  
200  
180  
160  
140  
120  
100  
80  
V
I
C
= 3.3 V  
= 1.2 A  
= 10 mF  
V
I
C
= 1.8 V  
= 1.2 A  
= 10 mF  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
100  
75  
60  
40  
40 20  
40 20  
0
20  
40  
60  
80 100 120 140  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 6. Dropout Voltage vs. Temperature –  
OUT = 1.8 V  
Figure 7. Dropout Voltage vs. Temperature –  
VOUT = 3.3 V  
V
www.onsemi.com  
4
NCV8187  
TYPICAL CHARACTERISTICS  
40  
38  
36  
34  
32  
30  
28  
26  
24  
3.0  
V
= nom.  
= 0 mA  
= 10 mF  
V
= nom.  
= 1.2 A  
= 10 mF  
OUT  
OUT  
OUT  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
I
I
OUT  
OUT  
C
C
OUT  
22  
20  
40 20  
1.2  
1.0  
40 20  
0
20  
40  
60  
80 100 120 140  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 8. Quiescent Current vs. Temperature  
Figure 9. Ground Current vs. Temperature  
2000  
1950  
1900  
1850  
1800  
1750  
1700  
1650  
1600  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
V
C
= nom.  
= 10 mF  
OUT  
OUT  
Output ON  
Output OFF  
0.45  
0.40  
1550  
1500  
40 20  
0
20  
40  
60  
80 100 120 140  
40 20  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 10. Current Limit vs. Temperature  
Figure 11. Enable Thresholds vs. Temperature  
96  
94  
92  
90  
88  
86  
84  
135  
134  
133  
132  
131  
130  
129  
128  
127  
EN = low  
C
= 10 mF  
OUT  
V
= rising  
OUT  
to nominal  
V
OUT  
= falling  
from nominal  
82  
80  
126  
125  
40 20  
0
20  
40  
60  
80 100 120 140  
40 20  
0
20  
40  
60  
80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 12. Power Good Thresholds vs.  
Temperature  
Figure 13. Active Discharge Resistance vs.  
Temperature  
www.onsemi.com  
5
NCV8187  
TYPICAL CHARACTERISTICS  
100  
90  
80  
70  
60  
50  
40  
30  
20  
1K  
100  
10  
1
10  
0
0.01  
0.1  
1
10  
100  
1K  
10K  
10  
100  
1K  
10K  
100K  
1M  
FREQUENCY (kHz)  
FREQUENCY (Hz)  
Figure 14. Power Supply Rejection Ratio  
for VOUT = 1.8 V, IOUT = 10 mA, COUT = 10 mF  
Figure 15. Output Voltage Noise Spectral Density  
for VOUT = 1.8 V, IOUT = 10 mA, COUT = 10 mF  
APPLICATIONS INFORMATION  
The NCV8187 is the member of new family of high output  
current and low dropout regulators which delivers low  
quiescent and ground current consumption, good noise and  
power supply ripple rejection ratio performance. The  
NCV8187 incorporates EN pin and power good output for  
simple controlling by MCU or logic. Standard features  
include current limiting, softstart feature and thermal  
protection.  
Recommended operating current is between 10 mA and 1  
mA to obtain low saturation voltage. External pullup  
resistor can be connected to any voltage up to 5.5 V (please  
see Absolute Maximum Ratings table above).  
Power Dissipation and Heat Sinking  
The maximum power dissipation supported by the device  
is dependent upon board design and layout. Mounting pad  
configuration on the PCB, the board material, and the  
ambient temperature affect the rate of junction temperature  
rise for the part. For reliable operation junction temperature  
should be limited to +125_C. The maximum power  
dissipation the NCV8187 can handle is given by:  
Input Decoupling (CIN)  
It is recommended to connect at least 1 mF ceramic X5R  
or X7R capacitor between IN and GND pin of the device.  
This capacitor will provide a low impedance path for any  
unwanted AC signals or noise superimposed onto constant  
input voltage. The good input capacitor will limit the  
influence of input trace inductances and source resistance  
during sudden load current changes. Higher capacitance and  
lower ESR capacitors will improve the overall line transient  
response.  
ƪT  
ƫ
J(MAX) * TA  
PD(MAX)  
+
(eq. 1)  
RqJA  
The power dissipated by the NCV8187 for given  
application conditions can be calculated from the following  
equations:  
ǒ
Ǔ
ǒ
Ǔ
PD [ VIN IGND(IOUT) ) IOUT VIN * VOUT  
(eq. 2)  
Output Decoupling (COUT)  
The NCV8187 does not require a minimum Equivalent  
Series Resistance (ESR) for the output capacitor. The device  
is designed to be stable with standard ceramics capacitors  
with values of 4.7 mF or greater. Recommended capacitor for  
the best performance is 10 mF. The X5R and X7R types have  
the lowest capacitance variations over temperature thus they  
are recommended.  
or  
ǒ
Ǔ
PD(MAX) ) VOUT   IOUT  
VIN(MAX)  
[
(eq. 3)  
IOUT ) IGND  
Hints  
VIN and GND printed circuit board traces should be as  
wide as possible. When the impedance of these traces is  
high, there is a chance to pick up noise or cause the regulator  
to malfunction. Place external components, especially the  
output capacitor, as close as possible to the NCV8187, and  
make traces as short as possible.  
Power Good Output Connection  
The NCV8187 include Power Good functionality for  
better interfacing to MCU system. Power Good output is  
open collector type, capable to sink up to 10 mA.  
www.onsemi.com  
6
NCV8187  
ADJUSTABLE VERSION  
Not only adjustable version, but also any fixed version can  
be used to create adjustable voltage, where original fixed  
voltage becomes reference voltage for resistor divider and  
feedback loop. Output voltage can be equal or higher than  
original fixed option, while possible range is from 0.8 V up  
to 5.2 V. Picture below shows how to add external resistors  
to increase output voltage above fixed value.  
where V  
is voltage of original fixed version (from 0.8 V  
FIX  
up to 5.2 V). Do not operate the device at output voltage  
about 5.2 V, as device can be damaged.  
In order to avoid influence of current flowing into SNS pin  
to output voltage accuracy (SNS current varies with voltage  
option and temperature, typical value is 300 nA) it is  
recommended to use values of R1 and R2 below 500 kW.  
Output voltage is then given by equation:  
VOUT + VFIX   (1 ) R1ńR2)  
V
IN  
V
OUT  
IN  
OUT  
NCV8187  
ADJ or FIX version  
R1  
R2  
1 mF  
Ceramic  
10 mF  
Ceramic  
C
IN  
EN  
GND  
SNS  
C
OUT  
ON  
OFF  
Figure 16.  
Please note that output noise is amplified by V  
ratio. For example, if original 0.8 V fixed variant is used to  
create 3.6 V output voltage, output noise is increased  
/ V  
recommended to use as high fixed variant as possible – for  
example in case above it is better to use 3.3 V fixed variant  
to create 3.6 V output voltage, as output noise will be  
OUT  
FIX  
3.6/0.8 = 4.5 times and real value will be 4.5 × 15 mV  
=
amplified only 3.6/3.3 = 1.09 × (16.4 mV ).  
rms  
rms  
67.5ĂmV . For noise sensitive applications it is  
rms  
ORDERING INFORMATION  
Device part no.  
Voltage Option  
1.1V  
Marking  
PM  
PJ  
Option  
Package  
Shipping†  
NCV8187AMT110TAG  
NCV8187AMT120TAG  
NCV8187AMT180TAG  
NCV8187AMT330TAG  
NCV8187AMN120TAG  
NCV8187AMN180TAG  
NCV8187AMTWADJTAG  
NCV8187AMTW080TAG  
NCV8187AMTW090TAG  
NCV8187AMTW110TAG  
NCV8187AML120TAG  
NCV8187AML180TAG  
1.2V  
With Active Output  
Discharge  
WDFN6 2x2 non WF  
3000 / Tape & Reel  
(PbFree)  
1.8V  
PK  
3.3V  
PL  
1.2V  
NA  
With Active Output  
Discharge  
DFN6 3x3 non WF  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
(PbFree)  
1.8V  
NH  
ADJ  
K2  
WDFNW6 2x2 WF  
SLP  
0.8V  
KG  
With Active Output  
Discharge  
0.9V  
KH  
(PbFree)  
1.1V  
KM  
WD  
WE  
1.2V  
With Active Output  
Discharge  
DFNW6 3x3 WF SLP  
(PbFree)  
1.8V  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
7
NCV8187  
PACKAGE DIMENSIONS  
WDFN6 2x2, 0.65P  
CASE 511BR  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL AND  
IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM  
THE TERMINAL TIP.  
A3  
EXPOSED Cu  
MOLD CMPD  
D
A
B
A1  
ALTERNATE B1  
ALTERNATE B2  
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS  
WELL AS THE TERMINALS.  
5. FOR DEVICES CONTAINING WETTABLE FLANK  
OPTION, DETAIL A ALTERNATE CONSTRUCTION  
A-2 AND DETAIL B ALTERNATE CONSTRUCTION  
B-2 ARE NOT APPLICABLE.  
DETAIL B  
PIN ONE  
ALTERNATE  
REFERENCE  
E
CONSTRUCTIONS  
0.10  
C
L
L
MILLIMETERS  
DIM  
A
MIN  
0.70  
0.00  
MAX  
0.80  
0.05  
0.10  
C
L1  
TOP VIEW  
A1  
A3  
b
ALTERNATE A1  
ALTERNATE A2  
0.20 REF  
0.25  
1.50  
0.35  
DETAIL A  
A3  
DETAIL B  
D
2.00 BSC  
0.05  
C
C
ALTERNATE  
D2  
E
1.70  
CONSTRUCTIONS  
2.00 BSC  
A
E2  
e
0.90  
1.10  
0.65 BSC  
L
0.20  
---  
0.40  
0.15  
0.05  
6X  
A1  
L1  
SEATING  
PLANE  
NOTE 4  
C
SIDE VIEW  
D2  
RECOMMENDED  
MOUNTING FOOTPRINT  
DETAIL A  
L
6X  
0.45  
1
3
1.72  
E2  
1.12  
2.30  
6
4
6X b  
M
M
0.10  
0.05  
C
C
A
B
e
NOTE 3  
PACKAGE  
OUTLINE  
BOTTOM VIEW  
1
0.65  
PITCH  
6X  
0.40  
DIMENSIONS: MILLIMETERS  
www.onsemi.com  
8
NCV8187  
PACKAGE DIMENSIONS  
WDFNW6 2x2, 0.65P  
CASE 511DW  
ISSUE B  
www.onsemi.com  
9
NCV8187  
PACKAGE DIMENSIONS  
DFN6 3x3, 0.95P  
CASE 506DK  
ISSUE O  
A
D
NOTES:  
B
E
1. DIMENSIONS AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMESNION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.20 MM FROM THE TERMINAL TIP.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
A4  
PIN 1  
REFERENCE  
A1  
PLATED  
SURFACE  
DETAIL B  
MILLIMETERS  
2X  
DIM MIN  
0.75  
A1 0.00  
MAX  
0.95  
0.05  
0.10  
C
A
2X  
A3  
0.20 REF  
A4 0.05  
0.15  
0.45  
0.10  
C
TOP VIEW  
b
D
0.35  
3.00 BSC  
L3  
PLATED  
SURFACE  
D2 2.40  
2.60  
1.70  
DETAIL B  
A
0.10 C  
E
3.00 BSC  
A3  
C
E2 1.50  
e
L
0.95 BSC  
0.30  
0.50  
0.10  
SECTION CC  
L3 0.00  
0.05 C  
SEATING  
PLANE  
NOTE 4  
SIDE VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
D2  
6X  
0.60  
6X  
L
1
3
C
2.70  
PACKAGE  
OUTLINE  
C
E2  
3.30  
1.80  
6
4
6X b  
e
0.10 C A B  
0.05  
C
1
NOTE 3  
BOTTOM VIEW  
0.95  
PITCH  
6X  
0.50  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
10  
NCV8187  
PACKAGE DIMENSIONS  
DFNW6 3X3, 0.95P  
CASE 507AW  
ISSUE O  
EXPOSED  
COPPER  
www.onsemi.com  
11  
NCV8187  
ON Semiconductor and  
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NCV8187/D  

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