NCV84045DR2G [ONSEMI]
Self Protected Very Low Iq High Side Driver with Analog Current Sense;
| 型号： | NCV84045DR2G |
| 厂家： | 
ONSEMI |
| 描述： | Self Protected Very Low Iq High Side Driver with Analog Current Sense |
| 文件： | 总25页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Self Protected Very Low Iq
High Side Driver with
Analog Current Sense
8
1
SOIC−8
CASE 751−07
STYLE 11
NCV84045
The NCV84045 is a fully protected single channel high side driver
that can be used to switch a wide variety of loads, such as bulbs,
solenoids, and other actuators. The device incorporates advanced
protection features such as active inrush current management,
over−temperature shutdown with automatic restart and an overvoltage
active clamp. A dedicated Current Sense pin provides precision analog
current monitoring of the output as well as fault indication of short to
MARKING DIAGRAM
8
84045
AYWWG
G
V , short circuit to ground and OFF state open load detection. An
D
1
active high Current Sense Enable pin allows all diagnostic and current
sense features to be enabled.
84045 = Specific Device Code
A
Y
= Assembly Location
= Year
Features
WW
G
= Work Week
= Pb−Free Package
• Short Circuit Protection with Inrush Current Management
• CMOS (3 V / 5 V) Compatible Control Input
• Very Low Standby Current
(Note: Microdot may be in either location)
• Very Low Current Sense Leakage
• Proportional Load Current Sense
• Current Sense Enable
PIN CONNECTIONS
1
IN
CS_EN
GND
VD
• Off State Open Load Detection
OUT
OUT
VD
• Output Short to V Detection
D
• Overload and Short to Ground Indication
• Thermal Shutdown with Automatic Restart
• Undervoltage Shutdown
CS
(Top View)
• Integrated Clamp for Inductive Switching
• Loss of Ground and Loss of V Protection
D
ORDERING INFORMATION
• ESD Protection
†
Device
NCV84045DR2G
Package
Shipping
• Reverse Battery Protection with External Components
SOIC−8
(Pb−Free)
2500 / Tape &
Reel
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100 Grade 1
Qualified and PPAP Capable
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
• This is a Pb−Free Device
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
FEATURE SUMMARY
R
(typical) T = 25°C
R
50
32
mW
A
DSon
J
ON
Output Current Limit (typical)
I
lim
OFF−state Supply Current (max)
I
0.5
mA
D(off)
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2021 − Rev. 0
NCV84045/D
NCV84045
BLOCK DIAGRAM & PIN CONFIGURATION
VD
Overvoltage
Protection
Undervoltage
Protection
IN
Output
Clamping
Regulated
Charge Pump
í
CS_
EN
Current Limit
Overtemperature
and
Power Protection
OFF State Open
Load Detection
Analog Fault
OUT
Control
CS
Logic
Current
Sense
GND
Figure 1. Block Diagram
Table 1. SO8 PACKAGE PIN DESCRIPTION
Pin #
Symbol
IN
Description
Logic Level Input
1
2
3
4
5
6
7
8
CS_EN
GND
CS
Current Sense Enable
Ground
Analog Current Sense Output
Supply Voltage
Output
V
D
OUT
OUT
Output
V
D
Supply Voltage
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2
NCV84045
ID
VDS
IIN
VD
IN
IOUT
OUT
ICS
CS
ICS_EN
D
V
CS_EN
V
IN
VOUT
GND
VCS
_
CS EN
V
IGND
Figure 2. Voltage and Current Conventions
Table 2. Connection suggestions for unused and or unconnected pins
Connection
Floating
Input
Output
X
Current Sense
Current Sense Enable
X
X
Not Allowed
To Ground
Through 10 kW resistor
Not Allowed
Through 1 kW Resistor
Through 10 kW resistor
IN
1
2
8
VD
7
OUT
CS _ EN
GND
CS
6
5
3
4
OUT
VD
Figure 3. Pin Configuration (Top View)
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NCV84045
ELECTRICAL SPECIFICATIONS
Table 3. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
DC Supply Voltage
V
D
−0.3
38
45
Max Transient Supply Voltage (Note 1)
Load Dump − Suppresses
U *
S
−
V
Input Voltage
V
−10
−5
−
10
V
mA
mA
A
IN
Input Current
I
IN
5
−200
Reverse Ground Pin Current
Output Current (Note 2)
Reverse CS Current
CS Voltage
I
GND
I
−6
−
Internally Limited
−200
OUT
I
mA
V
CS
V
CS
V
− 41
V
D
D
CS_EN Voltage
V
−10
10
5
V
CS_EN
CS_EN
CS_EN Current
I
−5
mA
W
Power Dissipation Tc = 25°C (Note 6)
P
tot
1.97
Electrostatic Discharge (Note 3)
(HBM Model 100 pF / 1500 W)
Input
V
ESD
DC
4
4
4
4
4
−
−
−
−
−
kV
kV
kV
kV
kV
Current Sense
Current Sense Enable
Output
V
D
Charged Device Model
CDM−AEC−Q100−011
750
−
V
Single Pulse Inductive Load Switching Energy
E
AS
−
112
mJ
(L = 5 mH, Vbat = 13 V; I = 6.7 A, T
= 150°C) (Note 4)
L
Jstart
Operating Junction Temperature
Storage Temperature
T
−40
−55
+150
+150
°C
°C
J
T
storage
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class C according to ISO16750−1.
2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JS−001−2017)
Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes smaller than
2 x 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current
waveform characteristic defined in JEDEC JS−002−2018
4. Not subjected to production testing.
Table 4. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max. Value
Units
Thermal Resistance
°C/W
Junction−to−Lead (Note 5)
Junction−to−Ambient (Note 5)
Junction−to−Ambient (Note 6)
R
27.3
49.9
63.3
q
JL
JA
JA
R
R
q
q
2
5. 645 mm pad size, mounted on four−layer 2s2p PCB − FR4, 2 oz. Cu thickness for top and bottom layers and 1 oz. Cu thickness for inner
layers (planes not electrically connected)
2
6. 2 cm pad size, mounted on two−layer 2s0p PCB − FR4, 2 oz. Cu thickness (planes not electrically connected)
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NCV84045
ELECTRICAL CHARACTERISTICS (7 V ≤ V ≤ 28 V; −40°C < T < 150°C unless otherwise specified)
D
J
Table 5. POWER
Value
Typ
−
Min
4
Max
28
4
Rating
Symbol
Conditions
Unit
V
Operating Supply Voltage
Undervoltage Shutdown
V
D
V
−
3.5
V
UV
UV_hyst
Undervoltage Shutdown
Hysteresis
V
−
0.4
−
V
On Resistance
R
I
= 3.5 A, T = 25°C
−
−
−
−
50
−
−
mW
ON
OUT
J
I
= 3.5 A, T = 150°C
110
105
0.5
OUT
J
I
= 3.5 A, V = 4.5 V, T = 25°C
−
OUT
D
J
Supply Current (Note 7)
I
OFF−state: V = 13 V,
IN
0.2
mA
mA
D
D
V
= V
= 0 V, T = 25°C
OUT J
OFF−state: V = 13 V,
OUT J
−
−
−
−
0.2
−
0.5
3
D
V
= V
= 0 V, T = 85°C (Note 8)
IN
OFF−state: V = 13 V,
mA
D
V
= V
= 0 V, T = 125°C
IN
OUT J
ON−state: V = 13 V,
1.9
−
3.5
6
mA
mA
mA
D
OUT
V
IN
= 5 V, I
= 0 A
On State Ground Current
Output Leakage Current
I
V
= 13 V, V
= 5 V
GND(ON)
D
CS_EN
OUT
V
IN
= 5 V, I
= 1 A
I
V
= V
= 0 V, V = 13 V, T = 25°C
−
−
−
−
0.5
3
L
IN
OUT
OUT
D
J
V
= V
= 0 V, V = 13 V, T = 125°C
D J
IN
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Includes PowerMOS leakage current.
8. Not subjected to production testing.
Table 6. LOGIC INPUTS (V = 13.5 V; −40°C < T < 150°C)
D
J
Value
Typ
−
Min
−
Max
0.9
−
Rating
Input Voltage − Low
Input Current − Low
Input Voltage − High
Input Current − High
Input Hysteresis Voltage
Input Clamp Voltage
Symbol
Conditions
Unit
V
V
in_low
I
V
V
= 0.9 V
= 2.1 V
= 1 mA
1
−
mA
V
in_low
IN
IN
IN
V
2.1
−
−
−
in_high
in_high
I
−
10
−
mA
V
V
in_hyst
−
0.2
13
−13
−
V
in_cl
I
12
−14
−
14
−12
0.9
−
V
I
IN
= −1 mA
CS_EN Voltage − Low
CS_EN Current − Low
CS_EN Voltage − High
CS_EN Current − High
CS_EN Hysteresis Voltage
CS_EN Clamp Voltage
V
_
V
mA
V
CSE low
I
_
V
V
= 0.9 V
= 2.1 V
= 1 mA
1
−
CSE low
CS_EN
CS_EN
CS_EN
V
_
2.1
−
−
−
CSE high
I
_
−
10
−
mA
V
CSE high
V
_
−
0.2
13
−13
CSE hyst
V
_
I
12
−14
14
−12
V
CSE cl
I
= −1 mA
CS_EN
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NCV84045
Table 7. SWITCHING CHARACTERISTICS (V = 13 V, −40°C < T < 150°C)
D
J
Value
Typ
60
Min
5
Max
120
100
0.7
Rating
Turn−On Delay Time
Turn−Off Delay Time
Slew Rate On
Symbol
Conditions
Unit
ms
t
V
high to 20% V , R = 6.5 W, T = 25°C
OUT L J
d_on
d_off
IN
t
V
IN
low to 80% V
, R = 6.5 W, T = 25°C
5
40
ms
OUT
L
J
dV /dt
out on
20% to 80% V
, R = 6.5 W, T = 25°C
0.1
0.1
−
0.27
0.35
0.15
V / ms
V / ms
mJ
OUT
L
J
Slew Rate Off
dV /dt
out off
80% to 20% V
, R = 6.5 W, T = 25°C
0.7
OUT
L
J
Turn−On Switching Loss
(Note 9)
E
on
R = 6.5 W
L
0.33
Turn−Off Switching Loss
E
R = 6.5 W
−
0.1
0.33
50
mJ
off
L
(Note 9)
Differential Pulse Skew,
t
R = 6.5 W
L
−50
−
ms
skew
(t
− t
) see Figure 4
(OFF)
(ON)
(Switching Characteristics)
9. Not subjected to production testing.
Table 8. OUTPUT DIODE CHARACTERISTICS
Value
Typ
−
Min
Max
Rating
Forward Voltage
Symbol
Conditions
Unit
V
F
I
= −2 A, T = 150°C, V = V −
OUT
−
0.7
V
OUT
J
F
V
D
Table 9. PROTECTION FUNCTIONS (Note 10) (7 V ≤ V ≤ 18 V, −40°C < T < 150°C)
D
J
Value
Typ
175
7
Min
150
−
Max
200
−
Rating
Symbol
Conditions
Unit
°C
Temperature Shutdown (Note 11)
T
SD
Temperature Shutdown
T
°C
SD_hyst
Hysteresis (T − T ) (Note 11)
SD
R
Reset Temperature (Note 11)
Thermal Reset of Status (Note 11)
Delta T Temperature Limit (Note 11)
DC Output Current Limit
T
T
+1
T
+7
−
−
°C
°C
°C
A
R
RS
RS
T
RS
135
−
T
T = −40°C, V = 13 V
−
22
−
60
32
−
−
DELTA
J
D
I
V
D
= 13 V
46
46
−
limH
4 V < V < 18 V
A
D
Short Circuit Current Limit during
Thermal Cycling (Note 11)
I
V
R
= 13 V
J TSD
−
11
A
limTCycling
D
T
< T < T
Switch Off Output Clamp Voltage
Overvoltage Protection
V
I
= 0.5 A, V = 0 V, L = 20 mH
V
D
− 41
V
D
− 46
V − 52
D
V
V
out_clamp
OUT
IN
V
OV
V
IN
= 0 V, I = 20 mA
41
46
20
52
D
Output Voltage Drop Limitation
V
I
= 0.2 A
−
−
mV
DS_ON
OUT
10.To ensure long term reliability during overload or short circuit conditions, protection and related diagnostic signals must be used together
with a fitting hardware & software strategy. If the device operates under abnormal conditions, this hardware & software solution must limit
the duration and number of activation cycles.
11. Not subjected to production testing.
Table 10. OPEN−LOAD DETECTION (7 V ≤ V ≤ 18 V, −40°C < T < 150°C)
D
J
Value
Typ
−
Min
Max
Rating
Symbol
Conditions
Unit
Open−load Off State
Detection Threshold
V
OL
V
IN
= 0 V, V = 5 V
CS_EN
2
4
V
Open−load Detection
Delay at Turn Off
t
100
350
850
ms
d_OL_off
Off State Output Current
I
V
= 0 V, V
= V
OL
−3
−
6
mA
ms
OLOFF1
IN
OUT
Output rising edge to CS rising
edge during open load
t
V
= 4 V, V = 0 V
−
5
30
d_OL
OUT
IN
V
CS
= 90% of V
CS_High
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NCV84045
Table 11. CURRENT SENSE CHARACTERISTICS (7 V ≤ V ≤ 18 V, −40°C < T < 150°C)
D
J
Value
Typ
1000
860
−
Min
390
350
−25
500
−20
760
−15
970
−10
1090
−5
Max
−
Rating
Symbol
Conditions
= 0.010 A, V = 0.5 V, V
Unit
Current Sense Ratio
K
I
= 5 V
= 5 V
= 5 V
0
1
OUT
CS
CS_EN
CS_EN
CS_EN
Current Sense Ratio
K
I
I
= 0.05 A, V = 0.5 V, V
1800
25
OUT
OUT
CS
Current Sense Ratio Drift (Note 13)
Current Sense Ratio
DK / K
= 0.05 A, V = 0.5 V, V
%
%
%
%
1
1
2
3
4
5
CS
K
2
I
I
I
I
= 0.5 A, V = 4 V, V = 5 V
CS_EN
1210
−
1740
20
OUT
OUT
OUT
OUT
CS
Current Sense Ratio Drift (Note 13)
Current Sense Ratio
DK / K
I
= 0.5 A, V = 5 V
CS_EN
2
OUT
K
3
= 0.7 A, V = 4 V, V
= 5 V
1220
−
1630
15
CS
CS_EN
Current Sense Ratio Drift (Note 13)
Current Sense Ratio
DK / K
I
= 0.7 A, V = 5 V
CS_EN
3
OUT
K
4
= 1.5 A, V = 4 V, V
= 5 V
= 5 V
1230
−
1420
10
CS
CS_EN
Current Sense Ratio Drift (Note 13)
Current Sense Ratio
DK / K
I
= 1.5 A, V = 5 V
CS_EN
4
OUT
K
5
= 4.5 A, V = 4 V, V
1230
−
1340
5
CS
CS_EN
Current Sense Ratio Drift (Note 13)
Current Sense Leakage Current
DK / K
I
= 4.5 A, V = 5 V
CS_EN
%
5
OUT
CS
I
= 0 A, V = 0 V
−
−
1
mA
Ilkg
OUT
CS
V
= 5 V, V = 0 V
CS_EN
IN
I
= 0 A, V = 0 V
−
−
−
−
2
0.5
7
OUT
CS
V
= 5 V, V = 5 V
CS_EN
IN
I
= 2 A, V = 0 V
CS
OUT
V
= 0 V, V = 5 V,
CS_EN
IN
CS Max Voltage
CS
V
OUT
= 7 V, V = 5 V, R = 15 kW,
= 2 A, T = 150°C, V
5
−
V
V
Max
D
IN
CS
I
= 5 V
J
CS_EN
Current Sense Voltage in Fault
Condition (Note 12)
V
V
= 13 V, V = 0 V, R = 1 k,
−
10
20
−
−
CS_fault
CS_fault
OUT_sat
D
IN
CS
= 5 V
V
= 4 V, V
OUT
CS_EN
Current Sense Current in Fault
Condition (Note 12)
I
V
= 13 V, V = 5 V, V = 0 V,
7
30
−
mA
A
D
CS
= 4 V, V
IN
= 5 V
V
OUT
CS_EN
Output Saturation Current (Note 13)
CS_EN High to CS High Delay Time
CS_EN Low to CS Low Delay Time
I
V
= 7 V, V = 4 V, V = 5 V,
5.3
−
D
CS
IN
T = 150°C, V
= 5 V
J
CS_EN
t
V
= 5 V, V = 0 to 5 V,
CS_EN
10
5
60
25
250
250
100
ms
ms
ms
ms
ms
CS_High1
IN
IN
IN
IN
R
= 1 kW, R = 6.5 W
CS
L
t
V
V
V
= 5 V, V
CS
= 5 to 0 V,
−
CS_Low1
CS_EN
R
= 1 kW, R = 6.5 W
L
V
V
High to CS High Delay Time
Low to CS Low Delay Time
t
= 0 to 5 V, V
CS
= 5 V,
−
100
50
−
IN
CS_High2
CS_EN
L
R
= 1 kW, R = 6.5 W
t
= 5 to 0 V, V
CS
= 5 V,
−
IN
CS_Low2
CS_EN
L
R
= 1 kW, R = 6.5 W
Delay Time I Rising Edge to Rising
Dt
CS_High2
R = 6.5 W, R = 1 kW, V = 5 V,
−
D
L
CS
IN
Edge of CS
I
= 200 mA, I = 50% of I
OUT
CS
CSMAX
12.The following fault conditions included are: Over−temperature, Power Limitation, and OFF State Open−Load Detection.
13.Not subjected to production testing.
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NCV84045
Table 12. TRUTH TABLE
Conditions
Input
Output
CS (V
= 5 V) (Note 14)
CS_EN
Normal Operation
L
H
L
H
0
I
= I
/K
CS
OUT NOMINAL
Overtemperature
Undervoltage
L
L
L
0
H
V
CS_fault
L
H
L
L
0
0
Overload
H
H
H (no active current mgmt)
Cycling (active current mgmt)
I
= I
/K
CS_fault
CS
OUT NOMINAL
V
Short circuit to Ground
OFF State Open Load
L
L
L
0
H
V
V
CS_fault
L
H
CS_fault
14.If V
is low, the Current Sense output is at a high impedance, its potential depends on leakage currents and external circuitry.
CS_EN
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NCV84045
WAVEFORMS AND GRAPHS
Resistive Switching Characteristics
V
OUT
80%
80 %
dVOUT/ dt
20%
(off)
dVOUT/dt
(on)
20 %
td
(on)
td
(off)
V
IN
t
(on)
t
(off)
Figure 4. Switching Characteristics
V
IN
Normal Operation
t
t
t
t
t
I
t
ON
OFF
t
OUT
ON
V
CS_EN
t
Δt
CS_High2
CS_Low1
I
t
CS
CS_High1
t
CS_High2
Figure 5. Normal Operation with Current Sense Timing Characteristics
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NCV84045
V
IN
Dt
CS_High2
t
I
OUT
I
OUTMAX
90 % I
OUTMAX
t
I
CS
I
CSMAX
90 % I
CSMAX
t
Figure 6. Delay Response from Rising Edge of IOUT and Rising Edge of CS (for CS_EN = 5V)
Off−State Open − Load Delay Timing
IN
t
V
OUT
V
OL
t
t
t
d_OL_off
Figure 7. OFF−State Open−Load Flag Delay Timing
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NCV84045
V
IN
V
OUT
V
OL
OUT
V
CS
V
CS_fault
t
d_OL_off
t
CS_Low1
V
CS_EN
Figure 8. Off−State Open−Load with Added External Components
V
D − VOUT
T = 150°C
J
T = 25°C
J
T = −40°C
J
V
DS_ON
VI
/R
(T)
ODS_ON DSON
I
OUT
Figure 9. Voltage Drop Limitation for VDS_ON
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NCV84045
1400
1350
1300
1250
1200
1150
1100
1050
1000
950
30
25
20
15
10
5
Max, −40°C ≤ T ≤ 150°C
J
Max, −40°C ≤ T ≤ 150°C
J
Typ, −40°C ≤ T ≤ 150°C
J
0
−5
−10
−15
Min, −40°C ≤ T ≤ 150°C
J
Min, −40°C ≤ T ≤ 150°C
J
−20
−25
−30
900
850
800
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(A)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
I
(A)
OUT
OUT
Figure 10. IOUT/ICS vs. IOUT
Figure 11. Maximum Current Sense Ratio Drift
vs. Load Current
V
IN
I
OUT
I
limH
I
limTCycling
I
CS
I
CS_Fault
V
CS_EN
Figure 12. Short to GND or Overload
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12
NCV84045
V
IN
t
t
Overload
DC Output Current Limit
I
OUT
Current Limit during
thermal cycling
I
LIMH
I
LIMTCycling
T
J
T
TSD
T
R
T
RS
ΔT
J
ΔT
J_RST
T
J_Start
t
Figure 13. How TJ progresses During Short to GND or Overload
V
IN
Overload
I
OUT
I
NOMINAL
I
limH
I
limTCycling
I
CS
I
CS_Fault
I
/K
NOM
V
CS_EN
Figure 14. Discontinuous Overload or Short to GND
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13
NCV84045
Resistive short
from OUT to VD
Short from OUT
to VD
V
OUT
V
OL
I
OUT
V
CS
V
CS_Fault
t
t
d_OL_off
d_OL_off
V
CS_EN
Figure 15. Short Circuit from OUT to VD
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14
NCV84045
TYPICAL CHARACTERISTICS
6.75
6.25
5.75
5.25
4.75
4.25
3.75
3.25
2.75
2.25
1.75
1.25
0.75
8.0
7.5
7.0
T = 150°C
V
= 5 V
J
IN
6.5
6.0
5.5
5.0
4.5
4.0
3.5
T = 125°C
J
V
IN
= 2.1 V
= 0.9 V
3.0
2.5
2.0
V
IN
T = −40°C
J
0.25
−0.25
−2
2
6
10
14
18
22
26
30
34
−50 −30 −10 10 30 50 70 90 110 130 150
V_D (V)
TEMPERATURE (°C)
Figure 16. Output Leakage Current vs. VD
Voltage & Temperature, V_OUT = 0 V
Figure 17. Input Current vs. Temperature
−6
15
14
13
12
11
10
9
−7
−8
I
IN
= 1 mA
−9
−10
−11
−12
−13
I
IN
= −1 mA
8
7
6
−14
−15
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 18. Input Clamp Voltage (Positive) vs.
Temperature
Figure 19. Input Clamp Voltage (Negative) vs.
Temperature
2.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
0.5
0
0.2
0
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 20. V_IN Threshold High vs.
Temperature
Figure 21. V_IN Threshold Low vs.
Temperature
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15
NCV84045
TYPICAL CHARACTERISTICS
0.40
0.35
0.30
140
V
= 13 V
= 2 A
D
120
100
I
OUT
0.25
0.20
0.15
0.10
80
60
40
20
0
0.05
0
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 22. Hysteresis Input Voltage vs.
Temperature
Figure 23. R_ON vs. Temperature
140
120
100
80
4.0
3.9
3.8
3.7
3.6
3.5
3.4
3.3
T = 150°C
J
T = 125°C
J
T = 25°C
J
60
T = −40°C
J
40
3.2
3.1
3.0
20
0
5
10
15
20
25
30
−50 −30 −10 10 30 50 70 90 110 130 150
VD (V)
TEMPERATURE (°C)
Figure 24. R_ON vs. V_D Voltage
Figure 25. Undervoltage Shutdown vs.
Temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
R
= 13 V
V = 13 V
D
D
= 6.5 W
R
= 6.5 W
LOAD
LOAD
0.1
0
0.1
0
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 26. Slew Rate ON vs. Temperature
Figure 27. Slew Rate OFF vs. Temperature
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16
NCV84045
TYPICAL CHARACTERISTICS
35
34
33
32
31
30
29
28
4.0
3.5
3.0
2.5
2.0
1.5
1.0
27
26
25
0.5
0
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 28. Current Limit vs. Temperature
Figure 29. CS_EN Threshold High vs.
Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
15
14
13
12
11
10
I
= 1 mA
CS_EN
9
8
7
6
0.5
0
−50 −30 −10 10 30 50 70 90 110 130 150
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 30. CS_EN Threshold Low vs.
Temperature
Figure 31. CS_EN Clamp Voltage (Positive) vs.
Temperature
−6
−7
−8
−9
−10
−11
−12
−13
I
= −1 mA
CS_EN
−14
−15
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 32. CS_EN Clamp Voltage (Negative)
vs. Temperature
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17
NCV84045
Table 13. ISO 7637−2: 2011(E) PULSE TEST RESULTS
Test Severity Levels, 12 V System
ISO 7637−2:2011(E)
Delays and
Impedance
# of Pulses
or Test Time
Pulse / Burst
Rep. Time
Test Pulse
I / II
−75
+37
−112
+75
III
IV
1
−112
+55
−150
+112
−220
+150
2 ms, 10 W
0.05 ms, 2 W
0.1 ms, 50 W
0.1 ms, 50 W
500 pulses
500 pulses
1 h
0.5 s
0.5 s
2a
3a
3b
−165
+112
100 ms
100 ms
1 h
ISO 7637−2:2011(E)
Test Results
III
Test Pulse
I / II
IV
A
C
A
A
1
2a
3a
3b
Class
Functional Status
A
B
All functions of a device perform as designed during and after exposure to disturbance.
All functions of a device perform as designed during exposure. However,one or more of them can go beyond
specified tolerance. All functions return automatically to within normal limits after exposure is removed. Mem-
ory functions shall remain class A.
C
D
E
One or more functions of a device do not perform as designed during exposure but return automatically to
normal operation after exposure is removed.
One or more functions of a device do not perform as designed during exposure and do not return to normal
operation until exposure is removed and the device is reset by simple “operator/use” action.
One or more functions of a device do not perform as designed during and after exposure and cannot be re-
turned to proper operation without replacing the device.
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18
NCV84045
APPLICATION INFORMATION
+5 V
VD
RμC
ZCS
CS
IN
Output
Clamping
Dld
RμC
ZVD
Micro
Controller
RμC
VBAT
Control
Logic
CS_EN
ZBody
OUT
Cexternal
RCS
ZESD
GND
ZL
RGND
Figure 33. Application Schematic
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19
NCV84045
LOSS OF GROUND PROTECTION
* VD
RGND
When device or ECU ground connection is lost and load
is still connected to ground, the device will turn the output
OFF. In loss of ground state, the output stage is held OFF
independent of the state of the input. Input resistors are
recommended between the device and microcontroller.
* IGND
+
(eq. 1)
Since this resistor can be used amongst multiple
High−Side devices, please take note the sum of the
maximum active GND currents (I
) for each
GND(On)max
device when sizing the resistor. Please note that if the
microprocessor GND is not shared by the device GND, then
Reverse Battery Protection
Solution 1: Resistor in the GND line only
(no parallel Diode)
The following calculations are true for any type of load.
In the case for no diode in parallel with R
calculations below explain how to size the resistor.
Consider the following parameters:
R
GND
produces a shift of (I
× R
) in the input
GND(On)max
GND
thresholds and CS output values. If the calculated power
dissipation leads to too large of a resistor size or several
devices have to share the same resistor, please look at the
second solution for Reverse Battery Protection. Refer to
, the
GND
Figure 35 for selecting the proper R
.
GND
–I
Maximum = 200 mA for up to −V = 32 V.
GND
D
Where –I
is the DC reverse current through the GND
GND
pin and –V is the DC reverse battery voltage.
D
Figure 34. Reverse Battery RGND Considerations
Solution 2: Diode (D
ground line.
A resistor value of R
) in parallel with RGND in the
the input threshold and current sense values if the micro
controller ground is not common to the device ground. This
shift will not vary even in the case of multiple high−side
devices using the same resistor/diode network.
GND
= 1 kOhm should be selected and
if the device drives an inductive
GND
placed in parallel to D
GND
load. The diode (D
) provides a ~600−700 mV shift in
GND
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20
NCV84045
UNDERVOLTAGE PROTECTION
The device has two under−voltage threshold levels,
and V . Switching function (ON/OFF) requires
remain in ON state. While all protection functions are
guaranteed when the switch is ON, diagnostic functions are
V
D_MIN
UV
supply voltage to be at least V
. The device features a
operational only within nominal supply voltage range V
D_MIN
D.
lower supply threshold V , above which the output can
UV
VOUT
V
UV
V
D_MIN
VD
Figure 35. Undervoltage Behavior
Overvoltage Protection
The NCV84045 has two Zener diodes Z
which provide integrated overvoltage protection. Z
automatic recovery after the supply voltage comes back to
the normal operating range. The specified parameters as
well as short circuit robustness and energy capability cannot
be guaranteed during overvoltage exposure.
and Z
,
VD
CS
VD
protects the logic block by clamping the voltage between
supply pin V and ground pin GND to V . Z limits
D
ZVD CS
Overload Protection
voltage at current sense pin CS to V – V . The output
power MOSFET’s output clamping diodes provide
protection by clamping the voltage across the MOSFET
D
ZCS
Current limitation as well as overtemperature shutdown
mechanisms are integrated into NCV84045 to provide
protection from overload conditions such as bulb inrush or
short to ground.
(between V pin and OUT pin) to V
. During
CLAMP
D
overvoltage protection, current flowing through Z , Z
VD CS
and the output clamp must be limited. Load impedance Z
L
Current Limitation
limits the current in the body diode Z . In order to limit
Body
In case of overload, NCV84045 limits the current in the
output power MOSFET to a safe value. Due to high power
dissipation during current limitation, the device’s junction
temperature increases rapidly. In order to protect the device,
the output driver is shut down by one of the two
overtemperature protection mechanisms. The output current
limit is dependent on the device temperature, and will fold
back once the die reaches thermal shutdown. If the input
remains active during the shutdown, the output power
MOSFET will automatically be re−activated after a
minimum OFF time or when the junction temperature
returns to a safe level.
the current in Z a resistor, R
the GND path. External resistors R and R
(150 W), is required in
VD
GND
limit the
CS
SENSE
current flowing through Z and out of the CS pin into the
CS
micro−controller I/O pin. With RGND, the GND pin voltage
is elevated to V – V
when the supply voltage V rises
D
ZVD
D
above V
. ESD diodes Z
pull up the voltage at logic
ZVD
ESD
pins IN, CS_EN close to the GND pin voltage V – V
.
D
ZVD
External resistors R , and R
are required to limit the
IN
CS_EN
current flowing out of the logic pins into the
micro−controller I/O pins. During overvoltage exposure, the
device transitions into a self−protection state, with
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21
NCV84045
Output Clamping with Inductive Load Switch Off
relative to the supply voltage VBAT. During output clamping
with inductive load switch off, the energy stored in the
inductance is rapidly dissipated in the device resulting in
high power dissipation. This is a stressful condition for the
device and the maximum energy allowed for a given load
inductance should not be exceeded in any application.
The output voltage VOUT drops below GND potential
when switching off inductive loads. This is because the
inductance develops a negative voltage across the load in
response to a decaying current. The integrated clamp of the
device clamps the negative output voltage to a certain level
V
IN
t
t
t
I
OUT
V
OUT
V
BAT
V
CLAMP
V
BAT
− V
CLAMP
Figure 36. Inductive Load Switching
100
10
1
V
= 13.5 V
D
125°C, Failure
125°C, Derated
150°C, Failure
150°C, Derated
R = 0 W
L
1
10
100
L (mH)
Figure 37. Maximum Switch−Off Current vs. Load Inductance, VD = 13.5 V, RL = 0 W
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22
NCV84045
OPEN LOAD DETECTION IN OFF STATE
Open load diagnosis in OFF state can be performed by
activating an external resistive pull−up path (R ) to V
currents (designed pull−down resistance, humidity−induced
.
leakage etc) as well as the open load threshold voltage V
have to be taken into account.
PU
BAT
OL
To calculate the pull−up resistance, external leakage
V
BAT
V
D
V
OL_OFF
IN
Z
R
BODY
PU
I
CS_FAULT
OUT
CS
R
R
LEAK
PD
GND
Z
L
R
CS
R
GND
Figure 38. Open Load Detection in Off State
HINTS
CURRENT SENSE IN PWM MODE
When operating in PWM mode, the current sense
functionality can be used, but the timing of the input signal
and the response time of the current sense need to be
considered. When operating in PWM mode, the following
performance is to be expected. The CS_EN pin should be
held high to eliminate any unnecessary delay time to the
This device is not targeting safety critical applications as
it does not contain specific safety mechanisms. In case a
customer would like to use the device for safety critical
applications then he would need to use decomposition at
system level to use the device. This is possible and quite
common practice and will be clearly indicated in the
datasheet. In this condition the development would be done
as QM without any ASIL level assigned.
circuit. When V switches from low to high, there will be
IN
a typical delay (t
) before the current sense responds.
CS_High2
Once this timing delay has passed, the rise time of the current
EMC Performance
sense output (Dt ) also needs to be considered. When
CS_High2
If better EMC performance is needed, connect a C1 =
100 nF, C2 = C3 = 10 nF ceramic capacitors to the pins as
close to the device as possible according to Figure 39.
V
switches from high to low a delay time (t
) needs
IN
CS_Low1
to be considered. As long as these timing delays are allowed,
the current sense pin can be operated in PWM mode.
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23
NCV84045
C
1
V
D
CS_EN
IN
OUT
+
CS
R
C
L
3
GND
C
2
R
CS
Figure 39. EMC Capacitors Placement
PACKAGE AND PCB THERMAL DATA
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
NCV84045, 8−SOIC, PCB Copper
Area = 645 mm , PCB:80x80x1.6 mm,
2
FR4, four−layer 2s2p
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
TIME (s)
0.1
1
10
100
1000
Figure 40. Junction to Ambient Transient Thermal Impedance (645 mm2 Cu Area)
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
NCV84045, 8−SOIC, PCB Copper
Area = 200 mm , PCB:80x80x1.6 mm,
2
FR4, two−layer 2s0p
0.1
Single Pulse
0.000001 0.00001
0.01
0.0001
0.001
0.01
TIME (s)
0.1
1
10
100
1000
Figure 41. Junction to Ambient Transient Thermal Impedance (2 cm2 Cu Area)
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24
NCV84045
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
−X−
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
SOLDERING FOOTPRINT*
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
onsemi,
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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