NDB6060L [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管 60V，48A，25mΩ;
| 型号： | NDB6060L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管 60V，48A，25mΩ 开关 脉冲 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel, Field
Effect Transistor,
Enhancement Mode
V
R
MAX
I MAX
D
DSS
DS(ON)
60 V
0.025 mꢀ @ 5 V
48 A
D
NDP6060L / NDB6060L
General Description
These logic level N−Channel enhancement mode power field effect
transistors are produced using onsemi’s proprietary, high cell density,
DMOS technology. This very high density process has been especially
tailored to minimize on−state resistance, provide superior switching
performance, and withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in−line power loss, and resistance to transients are
needed.
G
S
N−CHANNEL MOSFET
D
G
G
D
S
D
Features
S
• 48 A, 60 V
TO−220−3LD
CASE 340AT
D2PAK−3
(TO−263, 3−LEAD)
CASE 418AJ
♦ R
= 0.025 mꢀ @ V = 5 V
GS
DS(ON)
• Low Drive Requirements Allowing Operation Directly from Logic
Drivers. V < 2.0 V
GS(TH)
MARKING DIAGRAM
• Critical DC Electrical Parameters Specified at Elevated Temperature
• Rugged Internal Source−Drain Diode Can Eliminate the Need for an
External Zener Diode Transient Suppressor
XXXXX
XXXXX
XXXXXXXXG
AYWW
• 175°C Maximum Junction Temperature Rating
AYWWZZ
• High Density Cell Design for Extremely Low R
DS(ON)
2
• TO−220 and TO−263 (D PAK) Package for Both Through Hole
and Surface Mount Applications
• These Devices are Pb−Free and are RoHS Compliant
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
WW = Work Week
Symbol
Rating
NDP6060L / Unit
NDB6060L
ZZ
G
= Assembly Lot Code
= Pb−Free Package
V
Drain−Source Voltage
60
60
V
V
V
DSS
V
DGR
Drain−Gate Voltage (R ≤ 1 MΩ)
GS
ORDERING INFORMATION
V
GSS
Drain−Source Voltage
− Continuous
†
16
25
Package
Device
Shipping
− Nonrepetiti (t < 50 μs)
p
TO−220−3LD
(Pb−Free / Halide Free) Units / Tube
800 /
NDP6060L
NDB6060L
I
Drain Current
A
D
− Continuous
− Pulsed
48
144
800 /
Units / Tube
D2PAK−3
(TO−263, 3−LEAD)
(Pb−Free)
P
Total Power Dissipatiion ꢁ T = 25°C
100
0.67
W
W/°C
°C
D
C
− Derate above 25°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T ,T
Operating and Storage Temperature Range
−65 to 175
275
J
STG
T
Maximum lead temperature for soldering
purposes, 1/8” from case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
January, 2023 − Rev. 6
NDP6060L/D
NDP6060L / NDB6060L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Condition
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 1)
W
Single Pulse Drain−Source Avalanche Energy
Maximum Drain−Source Avalanche Current
V
DD
= 25 V, I = 48 A
−
−
−
−
200
48
mJ
A
DSS
D
I
AR
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
V
= 0 V, I = 250 μA
60
−
−
−
−
−
−
−
250
1
V
DSS
GS
D
I
Zero Gate Voltage Drain Current
= 60 V, V = 0 V
μA
mA
nA
nA
DSS
DS
GS
T = 125°C
J
−
I
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
V
= 16 V, V = 0 V
−
100
−100
GSSF
GS
DS
I
= −16 V, V = 0 V
−
GSSR
GS
DS
ON CHARACTERISTICS (Note 1)
V
Gate Threshold Voltage
V
= V , I = 250 μA
1
0.65
−
−
−
−
−
−
−
−
2
1.5
0.025
0.04
0.02
−
V
GS(th)
DS
GS
GS
D
T = 125°C
J
R
DS(ON
)
Static Drain−Source On−Resistance
V
= 5 V, I = 24 A
W
D
T = 125°C
J
−
V
GS
V
GS
V
DS
= 10 V, V = 24 A
−
W
A
DS
I
On−State Drain Current
= 5 V, V = 10 V
48
10
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 24 A
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
1630
460
2000
800
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
150
400
SWITCHING CHARACTERISTICS (Note 1)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
V
= 30 V, I = 48 A,
−
−
−
−
−
−
−
15
320
49
30
500
100
300
60
nS
nS
nS
nS
nC
nC
nC
D(on)
DD
GS
GS
D
= 5 V, R
= 15 Ω,
GEN
t
r
R
= 15 Ω
t
D(off)
tf
161
36
Q
g
V
= 48 V,
DS
I
= 48 A, V = 5 V
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
8.2
21
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuos Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
48
144
1.3
1.2
140
8
A
A
V
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
V
GS
= 0 V, I = 24 A (Note 1)
−
−
S
T = 125°C
J
−
−
t
rr
Reverse Recovery Time
V
GS
= 0 V, I = 48 A,
35
2
75
3.6
ns
A
F
dI /dt = 100 A/μs
F
I
rr
Reverse Recovery Current
THERMAL CHARACTERISTICS
R
R
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
−
−
−
−
1.5
°C/W
°C/W
θ
JC
JA
62.5
θ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ꢂ s, Duty Cycle v 2%.
www.onsemi.com
2
NDP6060L / NDB6060L
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
2
V
= 10 V
5.0
GS
4.0
4.5
V
GS
= 3.0 V 3.5
5.0
6.0
1.8
1.6
1.4
1.2
1
4.5
4.0
5.5
6.0
10
3.5
3.0
2.5
0.8
0.6
0
1
2
3
4
5
6
0
20
40
60
80
100
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 2. On−Resistance Variation with Gate
Figure 1. On−Region Characteristics
Voltage and Drain Current
2.0
1.8
1.6
1.4
2.0
1.75
1.5
V
= 5 V
I
V
= 24 A
GS
D
= 5 V
GS
T = 125°C
J
25°C
1.25
1.0
1.2
1.0
0.8
0.6
−55°C
0.75
0.5
0
20
40
60
80
100
−50 −25
0
25 50
75 100 125 150 175
I , DRAIN CURRENT (A)
D
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with Drain
Temperature
Current and Temperature
1.3
1.2
1.1
1
60
50
40
30
20
10
0
V
GS
= 10 V
T = −55°C
V
= V
= 250 μA
J
DS GS
I
D
25°C
0.9
0.8
0.7
0.6
0.5
125°C
1
2
3
4
5
−50 −25
0
25
50
75
100 125 150 175
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
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3
NDP6060L / NDB6060L
TYPICAL CHARACTERISTICS (continued)
1.15
1.1
60
I
D
= 250 μA
T = 125°C
J
10
1.0
1.05
1.0
0.1
0.01
0.95
25°C
−55°C
0.001
0.0001
V
GS
= 0 V
0.9
−50 −25
0.2 0.4
0.6
0.8
1
1.2 1.4
1.6 1.8
0
25
50
75 100 125 150 175
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
Figure 7. Breakdown Voltage Variation with
Temperature
4000
3000
10
8
I
D
= 48 A
V
DS
= 12 V
48 V
C
iss
2000
1000
500
24 V
6
C
oss
4
2
0
300
200
C
rss
f = 1 Mhz
V
GS
= 0 V
100
1
2
3
5
10
20 30
50
0
20
40
60
80
Qg, GATE CHARGE (nC)
V
SD
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Chracteristics
VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
VOUT
10%
VGEN
10%
90%
INVERTED
RGEN
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
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4
NDP6060L / NDB6060L
TYPICAL CHARACTERISTICS
300
30
24
18
12
6
R
LIMIT
DS(ON)
T = −55°C
J
10 μs
100 μs
1 ms
200
100
50
25°C
125°C
10 ms
20
10
5
100 ms
V
GS
= 5 V
SINGLE PULSE
= 1.5°C/W
R
θ
DC
JC
V
= 10 V
DS
2
1
T
C
= 25°C
0
0
10
20
30
40
50
1
100
2
3
5
10
20 30
60
I , DRAIN CURRENT (A)
D
V
SD
, DRAIN−SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current and Temperature
Figure 14. Maximum Safe Operating Area
1.0
0.5
D = 0.5
0.3
0.2
0.2
0.1
R
(t) = r(t) * R
ꢃ
JC JC
ꢃ
R
= 1.5°C/W
ꢃ
JC
0.1
P
(pk)
0.05
0.02
0.01
t
1
0.05
t
2
0.03
0.02
T − T = P * R (t)
ꢃ
JC
J
C
Duty Cycle, D = t / t
1
2
Single Pulse
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100 200
500 1000
t
1,
TIME (ms)
Figure 15. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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