NDC25170A [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, Die;
| 型号： | NDC25170A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, Die |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
25 A, 1700 V, D1, Die
1. Cathode
2. Anode
Schottky Diode
NDC25170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Anode
Features
CROSS SECTION
Max Junction Temperature 175C
Avalanche Rated 506 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Industrial Motor Loads, Wind Generation Inverter, Solar Inverter,
UPS
Power Switching Circuits
Die Information
Wafer Diameter: 6 inch
Die Size: 4000 x 4000 mm
(include Scribe Lane)
Metallization:
Top: Ti/TiN/AlSiCu
Back: Ti/NiV/Ag
Die Thickness: Typ. 200 mm
Bonding Pad Size:
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Anode: 3324 x 3324 mm
Recommended Wire Bond (Note 1)
Anode: 20 mil x 3
NOTE:
1. Based on TO−247 package
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 2
NDC25170A/D
NDC25170A
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
1700
506
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Notes 1 and 3)
Continuous Rectified Forward Current @ T < 153C
E
AS
mJ
A
I
F
25
C
Continuous Rectified Forward Current @ T < 135C
35
C
I
Non-Repetitive Peak Forward Surge Current
1435
1428
220
A
A
T
T
= 25C, 10 ms
= 150C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
Ptot
T
= 25C
385
W
W
C
C
C
T
= 150C
64
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 506 mJ is based on starting T = 25C, L = 0.5 mH, I = 45 A, V = 50 V.
AS
FMax
J
AS
2. I
, and I
AS
surge test value are limited by measurement limitation, it’s not product capability
FSM
3. DC, E and Curve test result base on TO247 package
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
Value
Unit
R
0.39
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 25 A, T = 25C
Min
−
Typ
1.50
1.95
2.32
0.08
0.58
4.24
169
Max
1.75
2.35
2.8
40
60
100
−
Unit
V
F
V
F
J
I = 25 A, T = 125C
−
F
J
I = 25 A, T = 175C
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1700 V, T = 25C
−
mA
J
= 1700 V, T = 125C
−
J
= 1700 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
2025
155
−
−
−
−
109
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NDC25170A
The Configuration of Chips
(Based on 6 inch Wafer)
chip
chip
PSPI Passivation Line
Scribe Lane
80.0 mm
chip
chip
Sawn−on−film frame packing based on tested wafer
ORDERING INFORMATION
Part Number
Die Size with SL (mm)
Package
Shipping
NDC25170A
4000 x 4000
N/A
Wafer Sales
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3
NDC25170A
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
10−4
50
45
40
35
30
25
20
15
10
5
TJ = −55oC
T
J = 25 o
C
10−5
10−6
10−7
10−8
10−9
TJ = 75 o
C
T
J = 125 o
C
TJ = 175 oC
TJ = 175 o
C
T
J = 125 o
C
TJ = 75 o
C
T
J = 25 oC
TJ = −55oC
1600 2000
0
0
1
2
3
4
5
0
400
800
1200
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
400
350
300
250
200
150
100
50
300
250
200
150
100
50
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
C, CASE TEMPERATURE (oC)
T
Figure 3. Current Derating
Figure 4. Power Derating
180
150
120
90
5000
1000
60
30
100
50
0
0
100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
0.1
1
10
100
800
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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4
NDC25170A
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
50
40
30
20
10
0
0
100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
NOTES:
0.01
Z
(t) = r(t) x R
o
qJC
qJC
R
= 0.39 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.001
10−6
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
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