NDF11N50ZH [ONSEMI]
N-Channel Power MOSFET 500 V, 0.52 Ohm; N沟道功率MOSFET的500 V , 0.52欧姆![NDF11N50ZH](http://pdffile.icpdf.com/pdf1/p00196/img/icpdf/NDF11N_1106238_icpdf.jpg)
型号: | NDF11N50ZH |
厂家: | ![]() |
描述: | N-Channel Power MOSFET 500 V, 0.52 Ohm |
文件: | 总7页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NDF11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
http://onsemi.com
V
R
(MAX) @ 4.5 A
DS(ON)
DSS
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
500 V
0.52 W
Compliant
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
N−Channel
Rating
Drain−to−Source Voltage
Continuous Drain Current, R
Continuous Drain Current
Symbol
NDF
500
12
Unit
V
D (2)
V
DSS
(Note 1)
I
I
A
q
JC
D
7.4
A
D
T = 100°C, R
(Note 1)
q
JC
A
G (1)
Pulsed Drain Current,
= 10 ms
I
44
A
DM
t
P
Power Dissipation, R
P
39
30
W
V
q
JC
D
S (3)
NDF11N50ZG
TO−220FP
Gate−to−Source Voltage
V
GS
MARKING
DIAGRAM
CASE 221D
Single Pulse Avalanche
E
AS
420
mJ
Energy, I = 10 A
D
ESD (HBM) (JESD22−A114)
V
4000
4500
V
V
esd
RMS Isolation Voltage
V
ISO
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
NDF11N50ZG
or
NDF11N50ZH
AYWW
Peak Diode Recovery (Note 2)
dv/dt
4.5
12
V/ns
A
Continuous Source Current (Body
Diode)
I
S
Gate
Source
Maximum Temperature for
Soldering Leads
T
260
°C
°C
L
NDF11N50ZH
TO−220FP
CASE 221AH
Operating Junction and
T , T
−55 to 150
J
stg
Storage Temperature Range
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
1. Limited by maximum junction temperature
2. I ≤ 10.5 A, di/dt ≤ 200 A/ms, V ≤ BV
, T ≤ 150°C.
J
d
DD
DSS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2013 − Rev. 4
NDF11N50Z/D
NDF11N50Z
THERMAL RESISTANCE
Parameter
Symbol
NDF11N50Z
Unit
Junction−to−Case (Drain)
R
3.2
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 3)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
500
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 500 V, V = 0 V
GS
125°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 4)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 4.5 A
R
DS(on)
0.48
0.52
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 100 mA
V
GS(th)
3.0
3.9
7.7
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 4.5 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
C
1097
132
30
1375
166
40
1645
199
50
pF
iss
Output Capacitance (Note 5)
C
oss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Reverse Transfer Capacitance
(Note 5)
C
rss
Total Gate Charge (Note 5)
Q
23
4.5
46
8.7
25
69
13
nC
g
Gate−to−Source Charge (Note 5)
Q
gs
Q
gd
V
DD
= 250 V, I = 10.5 A,
D
Gate−to−Drain (“Miller”) Charge
(Note 5)
12.5
37.5
V
GS
= 10 V
Plateau Voltage
Gate Resistance
V
6.2
1.4
V
GP
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
15
32
40
23
ns
d(on)
Rise Time
t
r
V
= 250 V, I = 10.5 A,
D
DD
V
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 10.5 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
310
2.5
ns
mC
V
= 0 V, V = 30 V
DD
GS
I
S
= 10.5 A, di/dt = 100 A/ms
Q
rr
3. Insertion mounted
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
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2
NDF11N50Z
TYPICAL CHARACTERISTICS
25
20
15
10
5
25
V
DS
= 25 V
V
= 10 V
GS
20
15
10
5
7.0 V
6.5 V
T = 25°C
J
6.0 V
5.5 V
15
T = 150°C
J
T = −55°C
J
5.0 V
10
0
0
0
5
20
25
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
I
= 4.5 A
D
V
= 10 V
GS
J
T = 25°C
J
T = 25°C
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
, GATE−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10 11
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate−to−Source
Figure 4. On−Resistance versus Drain
Voltage
Current and Gate Voltage
1.15
1.10
1.05
1.00
0.95
0.90
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
I
V
= 4.5 A
D
I
D
= 1 mA
= 10 V
GS
−50
−25
0
25
50
75
100
125
150
50
25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. BVDSS Variation with Temperature
Temperature
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3
NDF11N50Z
TYPICAL CHARACTERISTICS
3250
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
100
10
1
T = 25°C
J
V
GS
= 0 V
C
iss
f = 1 MHz
C
oss
T = 150°C
J
C
rss
T = 125°C
J
0.1
0
50 100 150 200 250 300 350 400 450 500
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
Figure 8. Capacitance Variation
versus Voltage
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
300
250
200
Q
T
V
DS
V
GS
Q
GS
150
100
50
Q
GD
V
DS
= 250 V
= 10.5 A
I
D
T = 25°C
J
0
0
5
10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
Figureg9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
10
20
10
V
I
V
= 250 V
= 10.5 A
= 10 V
DD
D
GS
t
d(off)
t
t
r
f
T = 150°C
J
t
d(on)
1
25°C
125°C
−55°C
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF11N50Z
TYPICAL CHARACTERISTICS
100
10
100 ms 10 ms
1 ms
10 ms
V
v 30 V
GS
SINGLE PULSE
T
C
= 25°C
dc
1
0.1
0.01
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
1
DUTY CYCLE = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
R
= 3.2°C/W
q
JC
Steady State
0.001
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02 1E+03
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NDF11N50Z
ORDERING INFORMATION
Order Number
Package
Shipping
NDF11N50ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF11N50ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
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6
NDF11N50Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
M
M
0.25 (0.010)
B
Y
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
SEATING
PLANE
A
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
E
A
P
E/2
H1
A1
M
M
B A
0.14
Q
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
D
C
NOTE 3
1
2
3
MILLIMETERS
DIM MIN
MAX
4.70
2.90
2.70
0.84
1.40
0.79
15.30
10.30
A
A1
A2
b
4.30
2.50
2.50
0.54
1.10
0.49
14.70
9.70
L
L1
b2
c
3X
c
b
3X
b2
e
M
M
0.25
B
A
C
D
A2
E
e
2.54 BSC
H1
L
6.70
12.70
---
7.10
14.73
2.10
L1
P
3.00
2.80
3.40
3.20
Q
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NDF11N50Z/D
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