NDP06N62ZG [ONSEMI]
N-Channel Power MOSFET 620 V, 0.98 ,; N沟道功率MOSFET的620 V， 0.98 ？ ，
| 型号： | NDP06N62ZG |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 620 V, 0.98 , |
| 文件： | 总6页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDF06N62Z, NDP06N62Z
N-Channel Power MOSFET
620 V, 0.98 W,
Features
• Low ON Resistance
• Low Gate Charge
http://onsemi.com
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
V
DSS
R
(TYP) @ 3 A
DS(ON)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
620 V
0.98 Ω
Rating
Symbol NDF06N62Z NDP06N62Z Unit
Drain−to−Source Voltage
V
620
V
A
DSS
Continuous Drain Current
R
I
D
6.0 (Note 1)
N−Channel
q
JC
D (2)
Continuous Drain Current
I
3.8 (Note 1)
20 (Note 1)
A
A
D
R
q
JC
, T = 100°C
A
Pulsed Drain Current,
@ 10 V
I
DM
V
GS
G (1)
Power Dissipation R
P
31
113
W
V
q
JC
D
Gate−to−Source Voltage
V
GS
30
Single Pulse Avalanche
E
AS
113
mJ
S (3)
Energy, I = 6.0 A
D
TO−220FP
CASE 221D
STYLE 1
ESD (HBM)
(JESD 22−A114)
V
3000
V
V
esd
MARKING
DIAGRAM
RMS Isolation Voltage
V
ISO
4500
−
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
A
Continuous Source
I
S
6.0
Current (Body Diode)
NDF06N62ZG
or
NDP06N62ZG
AYWW
Maximum Temperature for
Soldering Leads
T
260
°C
°C
L
Operating Junction and
Storage Temperature Range
T , T
−55 to 150
J
stg
Gate
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−220AB
CASE 221A
STYLE 5
Drain
1. Limited by maximum junction temperature
A
Y
= Location Code
= Year
2. I = 6.0 A, di/dt ≤ 100 A/ms, V ≤ BV
, T = +150°C
J
SD
DD
DSS
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
50 Units/Rail
NDF06N62ZG
TO−220FP
(Pb−Free)
NDP06N62ZG
TO−220AB
(Pb−Free)
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2010 − Rev. 0
NDF06N62Z/D
NDF06N62Z, NDP06N62Z
THERMAL RESISTANCE
Parameter
Symbol
NDF06N62Z
NDP06N62Z
Unit
Junction−to−Case (Drain)
R
4.0
50
1.1
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 3)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
620
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 620 V, V = 0 V
GS
125°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 4)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 3.0 A
R
DS(on)
0.98
5.0
1.2
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 100 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 3.0 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
923
106
23
pF
nC
iss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
32
g
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Q
6.3
17
gs
gd
gp
V
DD
= 310 V, I = 6.0 A,
D
V
GS
= 10 V
Q
V
6.3
3.2
V
Gate Resistance
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
t
13
19
32
28
ns
d(on)
Rise Time
t
r
V
V
= 310 V, I = 6.0 A,
D
DD
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 6.0 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
338
2.0
ns
mC
V
= 0 V, V = 30 V
DD
GS
I
S
= 6.0 A, di/dt = 100 A/ms
Q
rr
3. Insertion mounted
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
12
12
7 V
6.8 V
T = 25°C
J
V
DS
≥ 30 V
10 V
6.6 V
6.4 V
10
8
10
8
15 V
6.2 V
6.0 V
6
6
T = 150°C
J
T = 25°C
J
4
4
5.8 V
5.6 V
2
2
0
T = −55°C
J
0
0
5
10
15
20
25
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2
1.75
1.5
I
= 3 A
T = 25°C
J
D
T = 25°C
J
1.5
1
1.25
1
V
GS
= 10 V
0.5
0
0.75
0.5
5
6
7
8
9
10
0
2
4
6
8
10
12
V
GS
(V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.15
1.1
I
V
= 3 A
D
= 10 V
GS
I
= 1 mA
D
1.05
1.0
0.95
0.9
−50 −25
0
25
50
75
100
125 150
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. BVDSS Variation with Temperature
Temperature
http://onsemi.com
3
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
2000
1500
100
10
V
GS
= 0 V
V
= 0 V
GS
T = 25°C
J
T = 150°C
J
C
iss
1
1000
500
0
T = 100°C
J
C
0.1
oss
C
rss
0.01
0
50
100
150
200
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
Figure 8. Capacitance Variation
vs. Voltage
20
400
300
200
1000
100
V
DD
= 310 V
I
D
= 6 A
QT
V
GS
= 10 V
15
10
t
d(off)
t
r
t
f
V
DS
t
d(on)
Qgs
Qgd
V
GS
10
1
5
0
100
0
V
= 310V
DS
T = 25°C
J
I
D
= 6 A
0
5
10
15
20
25
30
35
1
10
R , GATE RESISTANCE (W)
100
Qg, TOTAL GATE CHARGE (nC)
G
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
100
10
6
5
4
3
2
V
= 0 V
GS
T = 25°C
J
10 ms
1 ms
100 ms
10 ms
dc
1
V
= 10 V
GS
Single Pulse
= 25°C
T
C
0.1
0.01
R
Limit
Thermal Limit
Package Limit
DS(on)
1
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF06N62Z
http://onsemi.com
4
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
10
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
R
= 4.0°C/W
q
JC
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 13. Thermal Impedance for NDF06N62Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NDF06N62Z, NDP06N62Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
−T−
PLANE
−B−
C
F
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
Q
H
U
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1.00
3.28
1
2 3
G
H
J
0.100 BSC
2.54 BSC
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
−Y−
K
K
L
12.78
1.23
13.73
1.47
N
Q
R
S
U
0.200 BSC
5.08 BSC
G
N
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
J
R
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
M
M
0.25 (0.010)
B
Y
TO−220AB
CASE 221A−09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
INCHES
DIM MIN MAX
MILLIMETERS
T
S
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
4
1
A
K
Q
Z
2
3
G
H
J
U
H
K
L
N
Q
R
S
T
L
R
V
U
V
Z
J
G
0.080
2.04
D
STYLE 5:
PIN 1. GATE
2. DRAIN
N
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NDF06N62Z/D
相关型号：
NDP080-002-BS
D Type Connector, 80 Contact(s), Male, 0.05 inch Pitch, Solder Terminal, Receptacle
YAMAICHI
NDP080-2
Board Connector, 80 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal, Plug
YAMAICHI
NDP100-002-BS
D Type Connector, 100 Contact(s), Male, 0.05 inch Pitch, Solder Terminal, Receptacle
YAMAICHI
NDP100-003-BS
D Type Connector, 100 Contact(s), Male, 0.05 inch Pitch, Surface Mount Terminal, Receptacle
YAMAICHI
NDP100-003-BS1
D Type Connector, 100 Contact(s), Male, 0.05 inch Pitch, Surface Mount Terminal, Receptacle
YAMAICHI
©2020 ICPDF网 联系我们和版权申明