NDP6020P [ONSEMI]
P 沟道，逻辑电平增强型场效应晶体管，-20V，-24A，50mΩ;
| 型号： | NDP6020P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，逻辑电平增强型场效应晶体管，-20V，-24A，50mΩ 局域网 PC 开关 脉冲 晶体管 场效应晶体管 |
| 文件： | 总7页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
-24 A, -20 V. RDS(ON) = 0.05 W @ VGS= -4.5 V.
RD) = 0.07W @ VGS= -2.7 V.
These logic level P-Channel enhancement mode power field
effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in
the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
RS(ON) = 0.075 W @ VGS= -2.5 V.
Critical DC eltricparameters specified at elevated
temperare.
Rued ernal source-drain diode can eliminate the need
fr an exterl Zener diode transient suppressor.
175C maximum junction temperature rating.
igh desity cell design for extremely low RDS(ON)
.
TO20 and TO-263 (D2PAK) package for both through
ole and surface mount applications.
_________________________________________________________________________
S
G
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP6020P
NDB6020P
Units
Drain-Source Voltage
-20
±8
V
V
A
VDSS
VGSS
ID
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
-24
-70
60
W
W/°C
°C
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
0.4
Operating and Storage Temperature Range
-65 to 175
TJ,TSTG
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
NDP6020P/D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
-20
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -12 A
-0.4
-0.3
-0.7
-0.56
0.041
0.06
-1
V
TJ = 125°C
= 12C
-0.7
Static Drain-Source On-Resistance
0.05
0.08
0.07
0.075
RDS(ON)
W
RDS(ON)
RDS(ON)
ID(on)
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
VGS = -2.7 V, ID = -10 A
VGS = -2.5 V, ID = -10 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -12
0.059
0.064
-24
A
S
Forward Transconductance
14
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = -10 VVGS = 0 V,
f = 1.0 MHz
1590
725
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
215
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
VDD = ID = -3 A,
G= -5 V, RGEN = 6 W
15
27
30
60
nS
nS
tr
tD(off)
Turn - Off Delay Time
Turn - Off Fall Time
120
70
250
150
nS
nS
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source C
Gate-Drain Ch
DS = -V,
ID = -24 A, VGS = -5 V
25
5
35
nC
nC
nC
10
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2
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-24
-80
-1.3
A
A
ISM
VSD
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -12 A (Note 1)
-1.1
60
V
ns
VGS = 0 V, IF = -24 A,
dIF/dt = 100 A/µs
trr
Irr
Reverse Recovery Current
-1.7
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
2.5
°C/W
°C/W
R
JC
q
Thermal Resistance, Junction-to-Ambient
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics
-50
1.8
1.6
1.4
1.2
1
VGS = -5.0V
-4.5
VGS = -2.5 V
-4.0
-40
-30
-20
-10
0
-2.7
-3.5
-3.0
-3.0
-2.7
-2.5
-3.5
-4.0
-4.5
-5.0
-2.0
0.8
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
-50
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
Figure 1. On-Region Characteristics.
Figr2. On-Retance Variation with Gate
Voage and Drain Current.
1.8
V= -4.5V
ID = -12A
1.6
1.4
1.2
1
V GS =-4.5V
T = 125°C
J
1.5
1
25°C
-55°C
0.8
0.5
0.6
-50
0
-10
-20
-30
-40
-50
-25
0
25
5
125
150
175
T
, JUNCTION T(°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation with Drain
Figure 3. On-Rariation
Current and Temperature.
with Tem
-10
-8
-6
-4
-2
0
1.2
1.1
1
T
J
= -55°C
VDS = -5V
VDS = V
GS
25°C
125°C
ID = -250µA
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
-0.5
-1
-1.5
-2
-2.5
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 6. Gate Threshold Variation with
Figure 5. Transfer Characteristics.
Temperature.
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4
Typical Electrical Characteristics (continued)
20
10
1.08
ID = -250µA
VGS = 0V
4
1.06
1.04
1.02
1
T
= 125°C
J
1
25°C
-55°C
0.1
0.01
0.98
0.001
0.0001
0.96
-50
-25
0
25
50
75
100
125
150
175
0
0.2
-V
0.4
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Figu8. By Die Forward Voltage
Temperature.
Variation ith Current and Temperature.
4
0
4000
VDS = -5V
D = -24A
3000
-10V
2000
C
-15V
iss
1000
500
C
300
200
C
rs
f = 1 MHz
VGS = 0 V
100
0.1
0
10
20
30
40
0.2
-V
0.5
1
5
10
20
Q
, GATE CHARGE (nC)
g
, DRAIN TO SOGE (V)
DS
Figure 9. Capacitcteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
-VDD
td(off)
t d(on)
tf
tr
90%
RL
90%
VIN
D
VOUT
VOUT
10%
10%
90%
VGS
RGEN
DUT
G
VIN
50%
50%
S
10%
INVERTED
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
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5
Typical Electrical Characteristics (continued)
30
100
60
VDS = - 5V
24
T = -55°C
J
30
18
12
6
25°C
10
5
125°C
VGS = -4.5V
SINGLE PULSE
3
2
R q = 2.5 °C/W
JC
TC = 25°C
0
1
0
-5
-10
-15
-20
-25
1
2
5
10
20
30
I
, DRAIN CURRENT (A)
V , AIN-SOURCE VOLTAGE (V)
D
DS
Figure 13. Transconductance Variation with Drain
igure 14. ximum Safe Operating Area.
Current and Temperature.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 2.5 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t1
t2
0.03
0.02
T
- T = P * R
(t)
Single Pulse
J
C
JC
q
Duty Cycle, D = t 1 /t
2
0.01
0.01
1
1
10
100
1000
t1 ,TIME (m s)
Figure 15. Transient Thermal Response Curve.
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6
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