NDP6060 [ONSEMI]
N 沟道增强型场效应晶体管 60V，48A，25mΩ;
| 型号： | NDP6060 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管 60V，48A，25mΩ 局域网 开关 脉冲 晶体管 场效应晶体管 |
| 文件： | 总7页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel, Field
Effect Transistor,
Enhancement Mode
V
R
MAX
I MAX
D
DSS
DS(ON)
60 V
0.025 mꢀ @ 10 V
48 A
D
NDP6060 / NDB6060
General Description
These N−Channel enhancement mode power field effect transistors
are produced using onsemi’s proprietary, high cell density, DMOS
technology. This very high density process has been especially
tailored to minimize on−state resistance, provide superior switching
performance, and withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in−line power loss, and resistance to transients are
needed.
G
S
N−CHANNEL MOSFET
Features
G
D
S
• 48 A, 60 V
TO−220−3LD
♦ R
= 0.025 mꢀ @ V = 10 V
GS
DS(ON)
CASE 340AT
• Critical DC Electrical Parameters Specified at Elevated Temperature
• Rugged Internal Source−Drain Diode Can Eliminate the Need for an
External Zener Diode Transient Suppressor
MARKING DIAGRAM
• 175°C Maximum Junction Temperature Rating
• High Density Cell Design for Extremely Low R
DS(ON)
XXXXX
XXXXX
AYWWZZ
• TO−220 Package for Both Through Hole and Surface Mount
Applications
• This is a Halide Free Device
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Rating
Drain−Source Voltage
NDP6060 Unit
WW = Work Week
ZZ
= Assembly Lot Code
V
DSS
DGR
60
60
V
V
V
V
Drain−Gate Voltage (R ≤ 1 MΩ)
GS
V
GSS
Drain−Source Voltage
− Continuous
ORDERING INFORMATION
20
40
− Nonrepetiti (t < 50 μs)
p
†
Package
Device
Shipping
I
D
Drain Current
A
TO−220−3LD
800 /
− Continuous
− Continuous
− Pulsed
T
T
= 25°C
= 100°C
48
32
144
NDP6060
C
C
(Halide Free)
Units / Tube
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P
Total Power Dissipatiion ꢁ T = 25°C
100
0.67
W
W/°C
°C
D
C
− Derate above 25°C
T ,T
Operating and Storage Temperature Range
−65 to 175
275
J
STG
T
Maximum lead temperature for soldering
purposes, 1/8” from case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
January, 2023 − Rev. 3
NDP6060/D
NDP6060 / NDB6060
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Condition
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 1)
W
Single Pulse Drain−Source Avalanche Energy
Maximum Drain−Source Avalanche Current
V
DD
= 25 V, I = 48 A
−
−
−
−
200
48
mJ
A
DSS
D
I
AR
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
V
= 0 V, I = 250 μA
60
−
−
−
−
−
−
−
250
1
V
DSS
GS
D
I
Zero Gate Voltage Drain Current
= 60 V, V = 0 V
μA
mA
nA
nA
DSS
DS
GS
T = 125°C
J
−
I
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
V
= 20 V, V = 0 V
−
100
−100
GSSF
GS
DS
I
= −20 V, V = 0 V
−
GSSR
GS
DS
ON CHARACTERISTICS (Note 1)
V
Gate Threshold Voltage
V
= V , I = 250 μA
2
1.4
−
2.9
2.3
4
3.6
0.025
0.04
−
V
GS(th)
DS
GS
GS
D
T = 125°C
J
R
DS(ON
)
Static Drain−Source On−Resistance
V
= 10 V, I = 24 A
0.02
0.032
−
W
D
T = 125°C
J
−
I
On−State Drain Current
V
V
= 10 V, V = 10 V
48
10
A
S
D(on)
GS
DS
g
FS
Forward Transconductance
= 10 V, I = 24 A
19
−
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
1190
475
150
1800
800
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
400
SWITCHING CHARACTERISTICS (Note 1)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
V
= 30 V, I = 48 A,
−
−
−
−
−
−
−
10
145
28
20
300
60
150
70
−
nS
nS
nS
nS
nC
nC
nC
D(on)
DD
GS
D
= 10 V, R
= 7.5 W
GEN
t
r
t
D(off)
tf
77
Q
g
V
= 48 V,
39
DS
I
= 48 A, V = 10V
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
7.6
22
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuos Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
48
144
1.3
1.2
140
8
A
A
V
S
I
−
SM
V
SD
Drain−Source Diode Forward Voltage
V
GS
= 0 V, I = 24 A (Note 1)
−
0.9
0.8
87
3.6
S
T = 125°C
J
−
t
rr
Reverse Recovery Time
V
GS
= 0 V, I = 48 A,
35
2
ns
A
F
dI /dt = 100 A/µs
F
I
rr
Reverse Recovery Current
THERMAL CHARACTERISTICS
R
R
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
−
−
−
−
1.5
°C/W
°C/W
θ
JC
JA
62.5
θ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: pulse width v 300 ꢂ s, duty cycle v 2%.
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2
NDP6060 / NDB6060
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
2
V
GS
= 6.0 V
V
GS
= 20 V
7.0
8.0
9.0
9.0
8.0
7.0
12
10
1.8
1.6
1.4
1.2
1
10
12
20
6.0
5.0
0.8
0.6
0
1
2
3
4
5
6
0
20
40
60
80
100
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 2. On−Resistance Variation with Gate
Figure 1. On−Region Characteristics
Voltage and Drain Current
2.5
2.0
1.5
1.0
0.5
2.0
1.75
1.5
I
V
= 24 A
V
GS
= 10 V
D
= 10 V
GS
T = 125°C
J
1.25
1.0
25°C
0.75
0.5
−55°C
0
20
40
60
80
100
−50 −25
0
25 50
75 100 125 150 175
I , DRAIN CURRENT (A)
D
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with Drain
Temperature
Current and Temperature
60
50
40
30
20
10
0
1.2
1.1
1
T = −55°C
V
DS
= 10 V
J
V
= V
GS
= 250 μA
DS
25°C
I
D
125°C
0.9
0.8
0.7
0.6
0.5
2
4
6
8
10
−50 −25
0
25 50
75 100 125 150 175
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
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3
NDP6060 / NDB6060
TYPICAL CHARACTERISTICS (continued)
1.15
1.1
60
V
= 0 V
GS
I
D
= 250 μA
10
1.0
T = 125°C
J
1.05
1.0
0.1
25°C
0.01
−55°C
0.95
0.001
0.0001
0.9
0.2
0.4
0.6
0.8
1
1.2
1.4
−50 −25
0
25
50
75 100 125 150 175
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
Figure 7. Breakdown Voltage Variation with
Temperature
3000
2000
20
15
10
5
I
D
= 48 A
V
DS
= 12 A
48 V
C
iss
1000
500
C
oss
24 V
300
200
C
rss
f = 1 Mhz
V
GS
= 0 V
0
100
1
2
3
5
10
20 30
50
0
20
40
60
80
Qg, GATE CHARGE (nC)
V
SD
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Chracteristics
VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
VOUT
10%
VGS
10%
90%
INVERTED
RGEN
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
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4
NDP6060 / NDB6060
TYPICAL CHARACTERISTICS
300
30
24
18
12
6
R
LIMIT
DS(ON)
V
DS
= 0 V
10 μs
100 μs
200
100
50
T = −55°C
J
25°C
1 ms
125°C
20
10
5
10 ms
V
= 10 V
GS
100 ms
DC
SINGLE PULSE
= 1.5°C/W
R
θ
JC
2
1
T
= 25°C
C
0
0
10
20
30
40
50
1
100
2
3
5
10
20 30
60
I , DRAIN CURRENT (A)
D
V
SD
, DRAIN−SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current and Temperature
Figure 14. Maximum Safe Operating Area
1
D = 0.5
0.5
0.3
0.2
0.2
0.1
R
(t) = r(t) * R
ꢃ
JC JC
ꢃ
R
= 1.5°C/W
ꢃ
JC
0.1
P
(pk)
0.05
0.02
t
1
0.05
t
2
0.03
0.02
0.01
T − T = P * R (t)
ꢃ
JC
Duty Cycle, D = t / t
J
C
Single Pulse
1
2
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100 200
500 1000
t
1,
TIME (ms)
Figure 15. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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