NDP7060 [ONSEMI]
N 沟道增强型场效应晶体管 60V，75A，13mΩ;
| 型号： | NDP7060 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管 60V，75A，13mΩ 局域网 开关 脉冲 晶体管 场效应晶体管 |
| 文件： | 总9页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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May 1996
NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
75A, 60V. RDS(ON) = 0.013W @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7060
NDB7060
Units
V
VDSS
VDGR
Drain-Source Voltage
60
60
V
Drain-Gate Voltage (RGS < 1 MW)
VGSS
Gate-Source Voltage - Continuous
± 20
± 40
75
V
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous
A
ID
- Pulsed
225
150
W
W/°C
°C
PD
Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
1
Operating and Storage Temperature Range
-65 to 175
275
TJ,TSTG
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
°C
© 1997 Fairchild Semiconductor Corporation
NDP7060.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 75 A
550
75
mJ
A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
60
V
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
250
1
µA
mA
nA
nA
TJ = 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
2
2.8
2.1
4
V
VGS(th)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
1.4
3.6
TJ = 125°C
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
0.01
0.015
0.013
0.024
W
On-State Drain Current
75
15
A
S
ID(on)
gFS
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 37.5 A
Forward Transconductance
39
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
2960
1130
380
3600
1600
800
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
VDD = 30 V, ID = 75 A,
17
30
nS
nS
VGS = 10 V, RGEN = 5 W
128
400
tr
Turn - Off Delay Time
Turn - Off Fall Time
54
90
80
nS
nS
tD(off)
200
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
100
14.5
51
115
nC
nC
nC
Qg
Qgs
Qgd
VDS = 48 V,
ID = 75 A, VGS = 10 V
NDP7060.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
75
A
A
V
225
1.3
1.2
150
10
ISM
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 37.5 A (Note 1)
0.9
0.84
76
TJ = 125°C
trr
Irr
Reverse Recovery Time
VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs
40
ns
A
Reverse Recovery Current
2
4.7
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
1
°C/W
°C/W
R
JC
q
Thermal Resistance, Junction-to-Ambient
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7060.SAM
Typical Electrical Characteristics
120
2.5
2
VGS =20V
10
8.0
7.0
VGS = 5.0V
5.5
100
80
60
40
20
0
6.5
6.0
6.5
6.0
7.0
1.5
1
5.5
8.0
10
5.0
12
20
4.5
4.0
0.5
0
1
2
3
4
5
0
20
40
60
80
100
120
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
DS
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 1. On-Region Characteristics
2
1.8
1.6
1.4
1.2
1
1.8
I D = 40A
VGS = 10V
T
= 125°C
J
VGS = 10V
1.6
1.4
1.2
1
25°C
0.8
0.6
0.4
0.8
0.6
-55°C
-50
-25
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
60
50
40
30
20
10
0
1.2
VDS = 10V
VDS = VGS
1.1
1
ID = 250µA
T
= -55°C
J
125°C
0.9
0.8
0.7
0.6
0.5
25°C
-50
-25
0
25
50
75
100
125
150
175
2
3
4
5
6
7
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDP7060.SAM
Typical Electrical Characteristics (continued)
1.15
100
50
I D = 250µA
VGS = 0V
1.1
1.05
1
10
1
T
= 125°C
J
25°C
-55°C
0.1
0.95
0.01
0.9
-50
0.001
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
5000
20
ID = 75A
C
iss
3000
2000
VDS = 12V
15
10
5
48V
C
oss
1000
500
24V
f = 1 MHz
VGS = 0V
C
rss
300
200
0
1
2
5
10
20
30
60
0
25
50
Q
75
100
125
150
V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
VOUT
10%
10%
90%
VGS
INVERTED
RGEN
DUT
G
VIN
50%
50%
S
10%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP7060.SAM
Typical Electrical Characteristics (continued)
300
100
60
VDS = 10V
T
= -55°C
J
50
40
30
20
10
0
25°C
125°C
30
10
VGS = 20V
SINGLE PULSE
JC
3
1
R
= 1 o C/W
q
TC = 25°C
0.3
1
2
3
5
10
20
30
60
100
0
10
20
30
40
50
60
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 14. Maximum Safe Operating Area
Figure 13. Transconductance Variation with
Drain Current and Temperature
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 1.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
t 2
0.03
T
- T = P * R
(t)
0.01
J
C
q
JC
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.05
0.01
0.01
0.1
0.5
1
5
10
50
100
500
1000
t 1 ,TIME (ms)
Figure 15. Transient Thermal Response Curve
NDP7060.SAM
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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