NDS0605-F169 [ONSEMI]
P 沟道增强型场效应晶体管，-60V，-0.18A，5Ω;
| 型号： | NDS0605-F169 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道增强型场效应晶体管，-60V，-0.18A，5Ω 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
Features
General Description
These P-Channel enhancement mode field effect
transistors are produced using ON Semiconductor’s
proprietary, high cell density, DMOS technology. This
very high density process has been designed to
minimize on-state resistance, provide rugged
and reliable performance and fast switching. They
can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
current up to 1A.
•
−0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
• Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON)
• High saturation current
This product is particularly suited to low voltage
applications requiring a low current high side switch.
D
D
S
G
S
G
SOT-23
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
−60
±20
−0.18
−1
Units
VDSS
Drain-Source Voltage
V
V
A
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
Maximum Power Dissipation
0.36
PD
W
mW/°C
2.9
Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
−55 to +150
°C
Maximum Lead Temperature for Soldering
300
°C
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
65D
NDS0605
7’’
8mm
3000 units
Publication Order Number:
NDS0605/D
2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–60
V
VGS = 0 V,
ID = –10 µA
∆BVDSS
Breakdown Voltage Temperature
ID = –10 µA,Referenced to 25°C
mV/°C
–53
Coefficient
∆TJ
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage.
VDS = –48 V, VGS = 0 V
VDS = –48 V,VGS = 0 V TJ = 125°C
VGS = ±20 V, VDS = 0 V
–1
–500
±100
µA
µA
nA
IGSS
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = –250 µA,Referenced to 25°C
,
ID = –250 µA
–1
–1.7
3
–3
V
∆VGS(th)
Gate Threshold Voltage
mV/°C
Temperature Coefficient
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
1.0
1.3
1.7
5.0
7.5
10
VGS = –10 V, ID = –0.5 A
Ω
V
GS = –4.5 V, ID = –0.25 A
V
GS = –10 V,ID = –0.5 A,TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –10 V, VDS = – 10 V
VDS = –10V, ID = – 0.2 A
–0.6
0.07 0.43
A
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
79
10
4
pF
pF
pF
Ω
V
DS = –25 V, V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
VGS = –15 mV, f = 1.0 MHz
VDD = –25 V, ID = – 0.2 A,
10
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
2.5
6.3
10
7.5
1.8
0.3
0.4
5
12.6
20
15
2.5
ns
ns
ns
V
GS = –10 V, RGEN = 6 Ω
ns
nC
nC
nC
VDS = –48 V, ID = –0.5 A,
VGS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
–
IS
Maximum Continuous Drain–Source Diode Forward Current
A
V
0.18
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.5 A(Note 2)
–0.8 –1.5
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
17
15
nS
nC
IF = –0.5A
diF/dt = 100 A/µs
(Note 2)
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
1.4
2.2
2
VGS=-10V
-6.0V
-4.5V
-4.0V
1.2
1
VGS=-3.0V
-3.5V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-3.5V
-3.0V
-4.0V
-4.5V
-6.0V
-10V
-2.5V
0.8
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
5
1.8
1.6
1.4
1.2
1
ID = -0.5A
ID = -0.25A
V
GS = -10V
4
3
TA = 125oC
2
0.8
0.6
0.4
1
TA = 25oC
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1.2
25oC
VGS = 0V
VDS = -10V
TA = -55oC
1
0.8
0.6
0.4
0.2
0
1
0.1
125oC
TA = 125oC
25oC
0.01
-55oC
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
100
80
60
40
20
0
f = 1 MHz
VGS = 0 V
VDS = -12V
ID = -0.5A
CISS
-24V
8
6
4
2
0
-48V
COSS
CRSS
0
0.4
0.8
1.2
1.6
2
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
10
1
SINGLE PULSE
R
θJA = 350°C/W
RDS(ON) LIMIT
4
3
2
1
0
TA = 25°C
100us
1ms
10ms
100ms
1s
0.1
10s
VGS = -10V
DC
SINGLE PULSE
0.01
0.001
R
θJA = 350oC/W
TA = 25oC
1
10
100
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
0.2
θJA = 350oC/W
0.1
0.01
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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