NDS8425 [ONSEMI]
单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，7.4A，22mΩ;
| 型号： | NDS8425 |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，7.4A，22mΩ |
| 文件： | 总6页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS8425
Single N-Channel, 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
•
7.4 A, 20 V.
RDS(ON) = 0.022 Ω @ VGS = 4.5 V
RDS(ON) = 0.028 Ω @ VGS = 2.7 V
using
ON
Semiconductor’s
advanced
Power
Trench process that has been especially tailored to
minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
•
•
•
Fast switching speed
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Low gate charge (11nC typical)
High performance trench technology for extremely low
RDS(ON)
Applications
•
•
DC/DC converter
Load switch
•
High power and current handling capability in a widely
used surface mount package
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
20
VGSS
ID
Gate-Source Voltage
V
A
±8
±7.4
Drain Current – Continuous
– Pulsed
(Note 1a)
±20
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
NDS8425
NDS8425
13’’
12mm
Publication Order Number:
©2001 Semiconductor Components Industries, LLC.
NDS8425/D
September-2017, Rev. 4
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
20
V
VGS = 0 V, ID = 250µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
14
ID = 250 µA, Referenced to 25°C
mV/°C
V
DS = 16 V,
VGS = 0 V
1
10
IDSS
Zero Gate Voltage Drain Current
µA
VDS = 16 V,VGS = 0 V, TJ=55°C
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
100
nA
nA
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.4
20
0.89
-3
1.5
V
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
GS = 4.5 V, ID = 7.4 A, TJ=125°C
VGS=2.7 V, ID =7.2A
ID = 7.4 A
15
21
19
22
31
28
V
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V,
VDS = 5 V
A
S
Forward Transconductance
ID = 7.4 A
31
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1098
240
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
115
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
18
24
42
20
18
ns
ns
V
DS = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
13
26
11
11
2.5
3.1
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
V
DS = 10 V,
GS = 4.5 V
ID = 7.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.9
1.3
A
V
VSD
Drain–Source Diode Forward
Voltage
V
GS = 0 V, IS = 1.9 A
(Note 2)
0.72
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
c) 125°/W when mounted on a
minimum pad.
mounted on a 1 in2
pad of 2 oz copper
mounted on a .04 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
Typical Characteristics
30
2.5
2
VGS = 4.5V
4.0V
25
2.5V
3.5V
3.0V
VGS = 2.0V
20
15
10
5
2.0V
1.5
1
2.5V
3.0V
3.5V
4.0V
4.5
1.5V
0
0.5
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
1.8
ID = 7.4 A
ID = 7.4A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 4.5V
TA = 125oC
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
2
3
4
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
25
20
15
10
5
TA = -55oC
VDS = 5V
VGS = 0V
10
25oC
TA = 125oC
125oC
1
0.1
25o
0.01
0.001
-55oC
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1.5
2.5
3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics (continued)
5
1500
1200
900
600
300
0
f = 1MHz
GS = 0 V
ID = 7.4A
V
CISS
4
VDS = 5V
10V
15V
3
2
1
0
COSS
CRSS
0
2
4
6
8
10
12
0.0
4.0
8.0
12.0
16.0
20.0
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
RDS(ON) LIMIT
µ
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
1ms
s
10ms
100ms
1s
10s
DC
1
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 125 °C/W
0.1
0.05
0.02
0.01
0.1
0.01
P(pk)
t1
t2
SINGLE PULSE
θ
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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