NDS9952A [ONSEMI]
双 N 和 P 沟道增强型场效应晶体管，30V;
| 型号： | NDS9952A |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道增强型场效应晶体管，30V 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总11页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS9952A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-channel enhancement mode power
N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
field
effect
transistors
are
produced
using
ON
Semiconductors proprietary, high cell density, DMOS
technology. This very high density process is especially
tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulses in
the avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
High density cell design or extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
notebook computer power management
and other
Dual (N & P-Channel) MOSFET in surface mount package.
battery powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
________________________________________________________________________________
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA= 25°C unless otherwise noted
Symbol Parameter
N-Channel
30
P-Channel
-30
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
V
V
A
VDSS
VGSS
ID
± 20
± 20
(Note 1a)
± 3.7
± 2.9
± 15
± 10
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
W
PD
(Note 1a)
(Note 1b)
(Note 1c)
1
0.9
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
40
°C/W
°C/W
R
JA
q
Thermal Resistance, Junction-to-Case
(Note 1)
R
JC
q
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 5
Publication Order Number:
NDS9952A/D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
Parameter
Conditions
Type Min
Typ
Max
Units
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
VDS = 24 V, VGS = 0 V
N-Ch
P-Ch
N-Ch
30
V
-30
V
IDSS
Zero Gate Voltage Drain Current
2
25
µA
µA
µA
µA
nA
nA
TJ = 55°C
TJ = 55°C
P-Ch
-2
VDS = -24 V, VGS = 0 V
-25
100
-100
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
All
All
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
VGS = 10 V, ID = 1.0 A
VGS = 4.5 V, ID = 0.5 A
VGS = -10 V, ID = -1.0 A
VGS = -4.5 V, ID = -0.5 A
N-Ch
P-Ch
N-Ch
1
0.7
-1
1.7
1.2
2.8
2.2
V
TJ = 125°C
TJ = 125°C
TJ = 125°C
TJ = 125°C
TJ = 125°C
TJ = 125°C
-1.6
-2.8
-2.5
0.08
0.13
0.11
0.18
0.13
0.21
0.2
-0.85 -1.25
Static Drain-Source On-Resistance
0.06
0.08
0.08
0.11
0.11
0.15
0.17
0.24
15
RDS(ON)
W
P-Ch
0.32
On-State Drain Current
N-Ch
P-Ch
N-Ch
P-Ch
A
S
ID(on)
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VDS = 15 V, ID = 3.7 A
VDS = -15 V, ID = -2.9 A
-10
Forward Transconductance
6
gFS
4
DYNAMIC CHARACTERISTICS
Input Capacitance
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
320
350
225
260
85
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
100
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2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type Min
Typ
Max
Units
ns
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
N-Channel
VDD = 10 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
9
15
40
20
40
50
90
50
50
27
25
13
21
21
21
5
ns
tr
P-Channel
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
ns
tD(off)
ns
tf
8
Qg
Qgs
Qgd
N-Channel
VDS = 10 V,
ID = 3.7 A, VGS = 10 V
9.5
10
1.5
1.6
3.3
3.4
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
P-Channel
VDS = -10 V,
ID = -2.9 A, VGS = -10 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.2
-1.2
1.3
A
V
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 1.25 A (Note 2)
0.8
-0.8
-1.3
75
VGS = 0 V, IS = -1.25 A (Note 2)
trr
Reverse Recovery Time
VGS = 0 V, IF = 1.25 A, dIF/dt = 100 A/µs
VGS = 0 V, IF = -1.25 A, dIF/dt = 100 A/µs
ns
100
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T - T
T - T
PD
=
=
(t)
= I2D (t) ´ RDS(ON )
J
t
( )
J
A
J
A
( )
t
T
R
R
+R
C qCA
qJ
A
qJ
Typical RqJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics: N-Channel
20
3
2.5
2
VGS =10V
8.0
6.0
VGS = 3.5V
5.0
15
10
5
4.5
4.0
4.5
4.0
5.0
1.5
1
6.0
8.0
10
3.5
3.0
0
0.5
0
1
2
3
0
3
6
9
12
15
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
1.4
1.2
1
2
ID = 3.7A
VGS = 10 V
VGS = 10V
1.5
T = 125°C
J
25°C
-55°C
1
0.8
0.5
0.6
-50
0
3
6
9
12
15
-25
0
25
50
75
100
125
150
I
, DRAIN CURRENT (A)
T
, JUNCTION TEMPERATURE (°C)
D
J
Figure 3. N-Channel On-Resistance Variation with
Temperature.
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
10
8
1.2
T
= -55°C
VDS = 10V
J
125°C
VDS = V GS
1.1
1
I D = 250µA
25°C
6
0.9
0.8
0.7
0.6
4
2
0
-50
-25
0
25
T , JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
1
2
3
4
5
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
Figure 5. N-Channel Transfer
Characteristics.
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4
Typical Electrical Characteristics: N-Channel (continued)
1.12
1.08
1.04
1
10
5
V GS = 0V
I D = 250µA
1
T
= 125°C
J
0.5
25°C
-55°C
0.1
0.01
0.96
0.92
0.001
-50
-25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
10
8
1000
VDS = 10V
ID = 3.7A
800
20V
15V
500
C
iss
6
300
200
C
oss
4
100
50
f = 1 MHz
VGS = 0V
2
C
rss
0
0
2
4
6
8
10
12
0.1
0.2
0.5
1
2
5
10
30
Q
, GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
10
8
T
= -55°C
VDS =10V
J
25°C
125°C
6
4
2
0
0
2
4
6
8
10
I
, DRAIN CURRENT (A)
D
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
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5
Typical Electrical Characteristics: P-Channel (continued)
-20
-15
-10
-5
3
2.5
2
VGS = -10V
-8.0
VGS = -3.5V
-7.0
-4.0
-4.5
-6.0
-5.0
-5.5
-5.5
-5.0
-4.5
-4.0
-6.0
1.5
1
-7.0
-8.0
-10
-3.5
-3.0
0
0.5
0
-1
-2
-3
-4
-5
0
-3
-6
-9
-12
-15
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 12. P-Channel On-Region Characteristics.
Figure 13. P-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
1.4
1.2
1
2
VGS = -10V
ID = -2.9A
V GS = -10V
T
= 125°C
J
1.5
25°C
1
-55°C
0.8
0.6
0.5
-50
-25
0
25
50
75
100
125
150
0
-3
-6
-9
-12
-15
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 14. P-Channel On-Resistance Variation with
Temperature.
Figure 15. P-Channel On-Resistance Variation with
Drain Current and Temperature.
1.2
-10
-8
-6
-4
-2
0
V DS = -10V
T
= -55°C
25°C
J
VDS = VGS
125°C
1.1
1
I D = -250µA
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
-1
-2
V
-3
-4
-5
-6
T
, JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 16. P-Channel Transfer Characteristics.
Figure 17. P-Channel Gate Threshold Variation
with Temperature.
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6
Typical Electrical Characteristics: P-Channel (continued)
1.1
1.08
1.06
1.04
1.02
1
10
5
I D = -250µA
V GS = 0V
1
T
= 125°C
0.5
J
25°C
-55°C
0.1
0.01
0.98
0.96
0.94
-50
-25
0
T
25
50
75
100
125
150
0.001
0.2
0.4
-V
0.6
0.8
1
1.2
1.4
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
10
8
1000
VDS = -10V
I D = -2.9A
800
-20V
500
C
-15V
iss
6
300
200
C
oss
rss
4
100
50
f = 1 MHz
VGS = 0V
2
C
0
0
2
4
6
8
10
12
0.1
0.2
0.5
1
2
5
10
30
Q
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
6
VDS = -15V
T
= -55°C
J
5
4
3
2
1
0
25°C
125°C
0
-2
-4
-6
-8
-10
I
, DRAIN CURRENT (A)
D
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
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7
Typical Thermal Characteristics: N & P-Channel
2.5
5
4
3
2
1
Total Power for Dual Operation
2
1a
1a
Power for Single Operation
1.5
1
1b
1c
1b
1c
4.5"x5" FR-4 Board
TA
25 o
Still Air
VGS 10V
4.5"x5" FR-4 Board
TA
25 o
Still Air
=
C
=
C
=
0.5
0
0.2
0.4
0.6
0.8
1
0
0.1
0.2
0.3
0.4
0.5
2oz COPPER MOUNTING PAD AREA (in 2
)
2
2oz COPPER MOUNTING PAD AREA (in
)
Figure 24. N-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
Figure 23. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
30
10
5
4
3
2
1
3
1
1a
0.3
0.1
VGS = 10V
1b
SINGLE PULSE
1c
4.5"x5" FR-4 Board
TA
25 o
Still Air
R
= See Note 1c
JA
q
=
C
0.03
0.01
TA = 25°C
VGS
=
-10V
0.1
0.2
0.5
V
1
2
5
10
30
50
0
0.1
0.2
0.3
0.4
0.5
, DRAIN-SOURCE VOLTAGE (V)
2
)
DS
2oz COPPER MOUNTING PAD AREA (in
Figure 26. N-Channel Maximum Safe Operating
Area.
Figure 25. P-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
30
10
3
1
0.3
0.1
VGS = -10V
SINGLE PULSE
R
= See Note 1c
JA
q
0.03
0.01
TA = 25°C
0.1
0.2
0.5
- V
1
2
5
10
30
50
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 27. P-Channel Maximum Safe Operating
Area.
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8
Typical Thermal Characteristics: N & P-Channel
1
D = 0.5
0.2
0.5
0.2
0.1
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1c
0.1
0.05
JA
q
0.05
P(pk)
0.02
0.01
Single Pulse
0.02
0.01
t
1
t
2
0.005
T
- T
= P * R
(t)
2
J
JA
A
q
Duty Cycle, D = t / t
1
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1, TIME (sec)
Figure 28. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
VOUT
10%
10%
90%
VGS
RGEN
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 29. N or P-Channel Switching Test Circuit.
Figure 30. N or P-Channel Switching Waveforms.
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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NDS9952AL99Z
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
NDS9952AS62Z
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
NDS9952A_NL
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
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