NDSH40120CDN [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L;
| 型号： | NDSH40120CDN |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L |
| 文件： | 总6页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 1200 V, D3, TO-247-3L
Schottky Diode
NDSH40120CDN
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
3
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
Features
Max Junction Temperature 175C
Avalanche Rated 166 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
DSH40
120CDN
AYWWZZ
No Reverse Recovery / No Forward Recovery
This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on second level interconnection)
DSH40120CDN
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
January, 2023 − Rev. 1
NDSH40120CDN/D
NDSH40120CDN
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) (per leg)
J
Symbol
Parameter
Value
1200
166
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 149C
E
AS
mJ
A
I
F
20*/40**
26*/52**
907
C
Continuous Rectified Forward Current @ T < 135C
C
I
Non-Repetitive Peak Forward Surge Current
A
A
T
C
T
C
= 25C, 10 ms
= 150C, 10 ms
F, Max
838
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
123
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
49
A
F,RM
p
Ptot
T
= 25C
217
W
W
C
C
C
T
= 150C
36
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Per leg.
** Per device.
1. E of 166 mJ is based on starting T = 25C, L = 0.5 mH, I = 25.8 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS (per leg)
Symbol
Parameter
Value
0.69*/0.39**
40
Unit
R
R
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
C/W
C/W
q
JC
JA
q
*Per leg.
** Per device.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (per leg)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 20 A, T = 25C
Min
−
Typ
1.36
1.60
1.81
2.39
6.91
16.6
95
Max
1.75
−
Unit
V
F
V
F
J
I = 20 A, T = 125C
−
F
J
I = 20 A, T = 175C
−
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25C
−
200
200
200
−
mA
J
= 1200 V, T = 125C
−
J
= 1200 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
1494
80
−
−
−
−
60
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NDSH40120CDN
DSH40120CDN
TO−247−3LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
NDSH40120CDN
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (per leg)
J
40
30
20
10
0
1E−04
T = −55C
T = 75C
J
J
T = 25C
T = 125C
J
J
1E−05
1E−06
T = 175C
J
T = 175C
J
T = 125C
J
T = 75C
J
T = 25C
J
1E−07
1E−08
T = −55C
J
0
400
800
1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
180
150
120
90
240
220
200
180
160
140
120
100
80
D = 0.1
D = 0.2
D = 0.3
D = 0.5
60
60
D = 1.0
30
0
40
20
D = 0.7
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (C)
C
T , CASE TEMPERATURE (C)
C
Figure 3. Current Derating
Figure 4. Power Derating
120
100
80
10000
1000
60
40
100
10
20
0
0
100 200
300
400 500
600
700 800
0.1
1
10
100
800
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitive vs. Reverse Voltage
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3
NDSH40120CDN
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (per leg)
J
30.00
25.00
20.00
15.00
10.00
5.00
0.00
0
100 200
300
400
500 600
700
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Notes:
= 0.69C/W
R
q
JC
0.01
t
Peak T = P
x Z (t) + T
q
DM JC C
1
J
Single Pulse
Duty Cycle, D = t /t
t
1
2
2
0.01
1E−06
1E−05
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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