NDT452AP [ONSEMI]
P 沟道增强型场效应晶体管 -30V，-5A，65mΩ;
| 型号： | NDT452AP |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道增强型场效应晶体管 -30V，-5A，65mΩ PC 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
-5A, -30V. RDS(ON) = 0.065W @ VGS = -10V
RDS(ON) = 0.1W @ VGS = -4.5V.
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
D
D
S
S
G
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
NDT452AP
-30
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
V
V
A
±20
(Note 1a)
-5
- 15
Maximum Power Dissipation
(Note 1a)
(Note 1b)
3
W
PD
1.3
(Note 1c)
1.1
TJ,TSTG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
R
JA
q
R
JC
q
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT452AP Rev. B1
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
-30
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -5.0 A
-1
-1.6
-1.2
-2.8
-2.2
V
-0.7
TJ = 125°C
TJ = 125°C
Static Drain-Source On-Resistance
0.052
0.075
0.085
0.065
0.13
0.1
RDS(ON)
W
VGS = -4.5 V, ID = -4.3 A
VGS = -10 V, VDS = -5 V
VGS = -4.5 V, VDS = -5 V
VDS = -10 V, ID = -5.0 A
ID(on)
On-State Drain Current
-15
-5
A
S
gFS
Forward Transconductance
7
DYNAMIC CHARACTERISTICS
Input Capacitance
690
430
160
pF
pF
pF
Ciss
Coss
Crss
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
9
20
30
50
40
30
ns
ns
tD(on)
tr
tD(off)
tf
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
20
40
19
22
3.2
5.2
ns
ns
nC
nC
nC
Qg
Qgs
Qgd
VDS = -10 V,
ID = -5.0 A, VGS = -10 V
Gate-Source Charge
Gate-Drain Charge
NDT452AP Rev. B1
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
IS
Maximum Continuous Drain-Source Diode Forward Current
-2.5
-1.2
100
A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
-0.85
VSD
VGS = 0 V, IS = -2.5 A (Note 2)
trr
VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs
ns
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T - T
T - T
J
A
J
A
PD
=
=
= I2D (t) ´ RDS(ON )
( )
t
T
J
R
t
qJA( )
R
qJC+RqCA(t)
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1c
1b
1a
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT452AP Rev. B1
Typical Electrical Characteristics
-20
3
2.5
2
VGS = -10V
VGS = -3.5V
-6.0
-5.0
- 4.0
-15
-4.5
-4.5
-4.0
-5.0
-10
1.5
1
-6.0
-10
-3.5
-5
0
-3.0
0.5
0
-1
V
-2
-3
-4
0
-4
-8
-12
-16
-20
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
1.4
1.2
1
2
ID = -5.0A
VGS = -10V
V GS = -10V
1.5
T
= 125°C
J
25°C
1
0.8
0.6
-55°C
0.5
-50
-25
0
25
50
75
100
125
150
0
-4
-8
-12
-16
-20
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation with
Temperature.
1.2
-20
-15
-10
-5
T
= -55°C
VDS = -10V
VDS = VGS
J
1.1
125°C
25°C
I D = -250µA
1
0.9
0.8
0.7
0.6
0
-50
-25
0
25
50
75
100
125
150
-1
-2
-3
-4
-5
-6
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
NDT452AP Rev. B1
Typical Electrical Characteristics
1.1
20
10
5
VGS = 0V
I D = -250µA
1.08
1.06
1.04
1.02
1
T
= 125°C
J
1
0.1
25°C
-55°C
0.98
0.96
0.94
0.01
0.001
-50
-25
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
T
, JUNCTION TEMPERATURE (°C)
J
-V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage Variation
Figure 7. Breakdown Voltage Variation with
Temperature.
with Current and Temperature.
2000
10
ID = -5.0A
VDS= -5V
-10V
-20V
8
6
4
2
0
1000
500
C
C
iss
oss
300
200
f = 1 MHz
VGS = 0V
C
rss
100
0.1
0.2
0.5
1
2
5
10
30
0
5
10
, GATE CHARGE (nC)
g
15
20
25
-V
, DRAIN TO SOURCE VOLTAGE (V)
Q
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
-VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT452AP Rev. B1
Typical Thermal Characteristics
12
3.5
3
T
= -55°C
J
VDS = -10V
1a
9
6
3
0
25°C
2.5
2
125°C
1.5
1
1b
1c
4.5"x5" FR-4 Board
TA
25o
Still Air
=
C
0.5
0
-4
-8
-12
-16
-20
0
0.2
0.4
0.6
0.8
1
I
, DRAIN CURRENT (A)
2
D
2oz COPPER MOUNTING PAD AREA (in
)
Figure 14. SOT-223 Maximum Steady- tate
Power Dissipation versus Copper
Mounting Pad Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
6
50
20
10
5
1a
5
4
3
2
1
0.5
1b
VGS = -10V
1c
SINGLE PULSE
0.1
4.5"x5" FR-4 Board
TA
25o
Still Air
R
= See Note 1c
JA
=
C
0.05
q
TA = 25°C
VGS
=
-10V
0.01
0
0.2
0.4
0.6
0.8
1
0.1
0.2
0.5
1
2
5
10
30
50
2
2oz COPPER MOUNTING PAD AREA (in
)
- V
, DRAIN-SOURCE CURRENT (V)
DS
Figure 16. Maximum Safe Operating Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
1
0.5
D = 0.5
0.2
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
0.1
R
= See Note 1 c
JA
q
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t1
t2
0.005
T
- T = P * R
(t)
J
A
JA
Single Pulse
q
Duty Cycle, D = t1 / t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDT452AP Rev. B1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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