NDT454P [ONSEMI]
P 沟道增强型场效应晶体管 -30V,-5.9A,50mΩ;型号: | NDT454P |
厂家: | ONSEMI |
描述: | P 沟道增强型场效应晶体管 -30V,-5.9A,50mΩ 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
文件: | 总8页 (文件大小:426K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
-5.9A, -30V. RDS(ON) = 0.05W @ VGS = -10V
Power SOT P-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-state
resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
RDS(ON) = 0.07W @ VGS = -6V
RDS(ON) = 0.09W @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
D
D
D
S
G
S
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
NDT454P
-30
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
V
V
A
VDSS
VGSS
ID
±20
(Note 1a)
±5.9
±15
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
3
W
1.3
1.1
(Note 1c)
Operating and Storage Temperature Range
-65 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Note 1a)
42
12
°C/W
°C/W
R
JA
q
Thermal Resistance, Junction-to-Case
(Note 1)
R
JC
q
* Order option J23Z for cropped center drain lead.
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 4
Publication Order Number:
NDT454P/D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
VDS = -15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
-5
µA
µA
nA
nA
TJ = 70°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
-1
-2.7
V
VGS(th)
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -5.9 A
VGS = -6 V, ID = -5.2 A
VGS = -4.5 V, ID = -4.6 A
VGS = -10 V, VDS = -5 V
VGS = -4.5, VDS = -5V
Static Drain-Source On-Resistance
0.038
0.046
0.064
0.05
0.07
0.09
RDS(ON)
W
ID(on)
On-State Drain Current
-15
-5
A
S
gFS
Forward Transconductance
VDS = 15 V, ID = 5.9 A
10
DYNAMIC CHARACTERISTICS
Input Capacitance
950
610
220
pF
pF
pF
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
10
18
80
45
29
3
30
60
ns
ns
ns
ns
nC
tD(on)
tr
tD(off)
tf
VDD = -15 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 W
120
100
40
Qg
Qgs
Qgd
VDS = -15 V,
ID = -5.9 A, VGS = -10 V
Gate-Source Charge
Gate-Drain Charge
11
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2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max Units
Maximum Continuous Drain-Source Diode Forward Current
-1.9
-1.3
100
A
V
IS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
-0.85
VSD
trr
VGS = 0 V, IS = -5.9 A (Note 2)
ns
VGS = 0V, IF = -5.9 A, dIF/dt = 100 A/µs
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
J- T
TJ- T
A
A
=
=
qJA(t)
= I2D (t) ´ RDS(ON )
J
qJC+RqCA(t)
( )
PD t
T
R
R
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1c
1b
1a
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics
-30
3
2.5
2
VGS =-10V
-6.0
-5.0
-25
-4.5
VGS = -3.5V
-4.0
-20
-15
-10
-5
-4.0V
-4.5V
-5.0V
-3.5
1.5
1
-6.0V
-3.0
-4
-10V
0
0.5
0
-4
-8
-12
-16
-20
-20
150
0
-1
-2
-3
-5
V
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
2
1.5
1
VGS = -10V
ID = -5.9A
V
= -10V
GS
T
= 125°C
J
25°C
-55°C
0.8
0.6
0.5
-50
-25
0
T
25
50
75
100
125
150
0
-5
-10
, DRAIN CURRENT (A)
-15
I
, JUNCTION TEMPERATURE (°C)
D
J
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
-20
1.2
1.1
1
T
= -55°C
J
25
VDS = -10V
VDS = VGS
125
ID = -250µA
-16
-12
-8
0.9
0.8
0.7
0.6
-4
0
-1
-2
-V
-3
-4
-5
-50
-25
0
25
, JUNCTION TEMPERATURE (°C)
J
50
75
100
125
, GATE TO SOURCE VOLTAGE (V)
T
GS
Figure 6. Gate Threshold Variation
with Temperature.
Figure 5. Transfer Characteristics.
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4
Typical Electrical Characteristics (continued)
1.1
20
10
5
ID = -250µA
1.08
VGS = 0V
1.06
1.04
1.02
1
1
0.1
T
= 125°C
J
25°C
-55°C
0.98
0.96
0.94
0.01
0.001
-50
-25
0
25
50
75
100
125
150
0
0.3
-V
0.6
0.9
1.2
1.5
T
, JUNCTION TEMPERATURE (°C)
, BODY DIODE FORWARD VOLTAGE (V)
SD
J
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Figure 7. Breakdown Voltage
Variation with Temperature.
Temperature.
3000
2000
10
I D = -5.9A
VDS = -10V
-15V
-20V
8
6
4
2
0
C
iss
1000
500
C
oss
300
200
C
rss
f = 1 MHz
VGS = 0V
100
0.1
0.3
-V
1
3
10
30
0
10
20
, GATE CHARGE (nC)
30
40
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
-VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
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5
Typical Electrical and ThermalCharacteristics (continued)
3.5
20
VDS = -15V
1a
T
= -55°C
J
3
2.5
2
16
12
8
25°C
125°C
1.5
1
1b
1c
4.5"x5" FR-4 Board
TA
25o
Still Air
4
=
C
0.5
0
0
0.2
0.4
0.6
0.8
1
0
-5
-10
, DRAIN CURRENT (A)
-15
-20
2
2oz COPPER MOUNTING PAD AREA (in
)
I
D
Figure 14. SOT-223 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
7
6
5
30
10
1a
3
1
1b
0.3
0.1
4
1c
VGS = -10V
SINGLE PULSE
4.5"x5" FR-4 Board
TA
25 o
Still Air
3
R
= See Note 1c
JA
=
C
q
0.03
0.01
TA = 25°C
VGS
=
-10V
2
0
0.2
0.4
0.6
0.8
1
0.1
0.2
0.5
1
2
5
10
30
50
2
)
2oz COPPER MOUNTING PAD AREA (in
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 16. Maximum Safe Operating Area.
1
0.5
D = 0.5
0.2
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
0.1
R
= See Note 1 c
JA
q
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t1
t2
0.005
T
- T = P * R
(t)
J
A
JA
Single Pulse
q
Duty Cycle, D = t1 / t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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❖
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