NDTL03N150CG [ONSEMI]
Power MOSFET;
| 型号： | NDTL03N150CG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总5页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDTL03N150C
Power MOSFET
1500V, 10.5Ω, 2.5A, N-Channel
Features
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• Low On-Resistance
• Ultra High Voltage
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free and RoHS compliance
V
R
(on) Max
I
DSS
DS
10.5Ω@10V
D Max
2.5A
1500V
Typical Applications
• Switch mode power supply
• AC Drive
ELECTRICAL CONNECTION
N-Channel
2
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1, 2, 3, 4)
Parameter
Symbol
Value
Unit
V
1 : Gate
2 : Drain
3 : Source
Drain to Source Voltage
V
1500
1
DSS
GSS
Gate to Source Voltage
V
30
V
Drain Current (DC)
I
2.5
A
D
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
3
A
I
5
DP
2.5
P
Power Dissipation
W
D
140
150
MARKING
Tc=25°C
Junction Temperature
Storage Temperature
Tj
°C
°C
mJ
A
Tstg
−55 to +150
34
Avalanche Energy (Single Pulse) (Note 2)
Avalanche Current (Note 3)
E
AS
03N150
I
2.5
AV
LOT No.
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : V =50V, L=10mH, I =2.5A (Fig.1)
DD AV
Note 3 : L≤10mH, Single Pulse
1
TO-3P-3L
2
3
THERMAL RESISTANCE RATINGS
Parameter
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
Symbol
Value
Unit
Junction to Case Steady State
R
0.89
50.0
θJC
°C/W
Junction to Ambient (Note 4)
Note 4 : Insertion mounted
R
θJA
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
1
Publication Order Number :
NDTL03N150C/D
NDTL03N150C
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 5, 6, 7)
Value
typ
Parameter
Symbol
V(
Conditions
Unit
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
)
I =10mA, V =0V
1500
V
mA
nA
V
BR DSS
D
GS
=1200V, V =0V
I
I
V
1
DSS
GSS
DS
GS
DS
DS
GS
V
V
V
=30V, V =0V
DS
100
4
V
(th)
=10V, I =1mA
2
GS
FS
D
Forward Transconductance
g
=20V, I =1.25A
1.9
8
S
D
Static Drain to Source On-State
Resistance
R
DS
(on)
I =1.25A, V =10V
10.5
Ω
D
GS
Input Capacitance
650
70
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ciss
V
=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
DS
20
t (on)
d
15
t
24
r
See Fig.2
Turn-OFF Delay Time
Fall Time
140
47
t (off)
d
t
f
Total Gate Charge
Qg
34
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=200V, V =10V, I =2.5A
GS
4.7
15
DS
D
V
I =2.5A, V =0V
S
0.8
350
2220
1.5
SD
GS
trr
ns
nC
See Fig.3
I =2.5A, V =0V, di/dt=100A/μs
S GS
Qrr
Effective Output Capacitance,
Energy Related (Note 6)
Effective Output Capacitance,
Time Related (Note 7)
Co(er)
18.3
pF
V
=0V, V =0 to 1200V
DS
GS
Co(tr)
29.6
pF
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while V
is rising from 0 to 80% V(
)
.
DS
is rising from 0 to 80% V(
BR DSS
Note 7 : Co(tr) is a fixed capacitance that gives the same charging time as Coss while V
)
.
DS
BR DSS
Fig. 1 Unclamped Inductive Switching Test Circuit
Fig. 2 Switching Time Test Circuit
Fig. 3 Reverse Recovery Time Test Circuit
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NDTL03N150C
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3
NDTL03N150C
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4
NDTL03N150C
PACKAGE DIMENSIONS
unit : mm
TO-3P-3L
CASE 340AF
ISSUE A
SEATING
PLANE
NOTES:
B
A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH OR GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b1 AND b2 DO NOT INCLUDE- DAMBAR PROTRU
SION. DAMBAR PROTRUSION SHALL NOT EXCEED 0.10.
E
A
P1
P
Q
A1
4
D1
D
D2
MILLIMETERS
L1
NOTE 3
DIM MIN
NOM
4.80
1.50
1.40
1.00
2.00
3.00
0.60
MAX
5.00
1.65
1.60
1.20
2.20
3.20
0.75
A
A1
A2
b
b1
b2
c
4.60
1.45
1.20
0.80
1.80
2.80
0.55
E1
L
D
19.70 19.90 20.10
D1 16.56 16.76 16.96
1
2
3
D2
E
9.80 10.00 10.20
15.40 15.60 15.80
2X
b1
c
BOTTOM VIEW
3X
b
E1 13.40 13.60 13.80
e
L
L1
P
P1
Q
b2
A2
5.15
5.45
5.75
e
19.80 20.00 20.20
SIDE VIEW
3.30
3.00
6.80
4.80
3.50
3.20
7.00
5.00
3.70
3.40
7.20
5.20
TOP VIEW
1 : Gate
GENERIC MARKING
DIAGRAM*
2 : Drain
3 : Source
XXXXXG
AYWW
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb-Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb-Free indicator, “G”, may
or not be present.
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
30 / Tube
TO-3P-3L
(Pb-Free)
NDTL03N150CG
03N150C
Note on usage : Since the NDTL03N150C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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