NFA50460R4B [ONSEMI]
Intelligent Power Module, 600V, 4A, DIP;
| 型号： | NFA50460R4B |
| 厂家： | 
ONSEMI |
| 描述： | Intelligent Power Module, 600V, 4A, DIP |
| 文件： | 总13页 (文件大小：880K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Motion SPM) 5 Series
NFA50460R4B,
NFA50460R47
General Description
The NFA50460R4B/7 is an advanced Motion SPM5 module
providing a fully featured, high performance inverter output stage for
AC induction, BLDC and PMSM motors such as refrigerators, fans
and pumps. These modules integrate optimized gate drive of the
built−in IGBTs (FS4 RC IGBT technology) to minimize EMI and
losses, while also providing multiple on−module protection features
including under−voltage lockouts and thermal monitoring. The
built−in high speed Driver IC requires only a single supply voltage and
translates the incoming logic−level gate inputs to the high voltage,
high current drive signals required to properly drive the module’s
internal IGBTs. Separate open emitter IGBT terminals are available
for each phase to support the widest variety of control algorithms.
SPM5P−023 / 23LD, PDD STD,
FULL PACK, DIP TYPE
CASE MODEJ
Features
UL Certified No. E209204 (UL1557)
600 V FS4 RC IGBT 3−Phase Inverter with Gate Drivers and
Protection
Built−In Bootstrap Diodes Simplify PCB Layout
Separate Open−Emitter Pins from Low−Side IGBTs for Three−Phase
Current−Sensing
Active−High Interface, Works with 3.3 / 5 V Logic, Schmitt−Trigger
Input
SPM5Q−023 / 23LD, PDD STD,
SPM23−BD (Ver1.5) SMD TYPE
CASE MODEM
Optimized for Low Electromagnetic Interference
MARKING DIAGRAM
Driver IC Temperature Sensing Built−In for Temperature Monitoring
Driver IC for Gate Driving and Under−Voltage Protection
$Y
Isolation Rating: 1500 V /min.
Moisture Sensitive Level (MSL) 3 for SMD PKG
RoHS Compliant
NFA50460R4x
&Z&K&E&E&E&3
rms
$Y
= onsemi Logo
NFA50460R4x = Specific Device Code
Applications
x = B or 7
3−Phase Inverter Driver for Small Power AC Motor Drives
&Z
&K
&3
= Assembly Plant Code
= Lot Traceability Code
= Date Code (Year & Week)
Related Source
AN−9080 − Motion SPM 5 Series Version 2 User’s Guide
AN−9082 − Motion SPM 5 Series Thermal Performance by Contact
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Pressure
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2023 − Rev. 1
NFA50460R4/D
NFA50460R4B, NFA50460R47
ORDERING INFORMATION
†
Device
Package
Packing Type
Reel Size
Quantity
Device Marking
NFA50460R4B
NFA50460R47
NFA50460R4B
NFA50460R47
SPM5P−023
SPM5Q−023
Rail
NA
15
Tape & Reel
330 mm
450
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ABSOLUTE MAXIMUM RATINGS (V = V = 15 V, T = 25C, unless otherwise noted)
DD
BS
C
Conditions
Symbol
Parameter
Rating
Unit
INVERTER PART (Each IGBT Unless Otherwise Specified)
V
Supply Voltage
Applied between P − N , N , N
450
500
600
V
V
V
PN
PN(Surge)
U
V
W
V
Supply Voltage (Surge)
Collector − Emitter Voltage
Applied between P − N , N , N
U V
W
V
CES
I
Each IGBT Collector Current
T
T
= 25C, V = 15 V, T < 150C
4
8
A
A
C
C
DD
J
= 25C, V = 15 V, T < 150C,
I
CP
Each IGBT Collector Current, Peak
C
DD
J
Under 1 ms Pulse Width (Note 2)
P
C
Collector Dissipation
T
C
= 25C per One Chip (Note 2)
10.3
W
T
J
Operating Junction Temperature
−40~150
C
CONTROL PART (Each IC Unless Otherwise Specified)
V
Control Supply Voltage
High−Side Control Bias Voltage
Input Signal Voltage
Applied between V and V
SS
20
20
V
V
V
DD
DD
V
Applied between V and V
B S
BS
V
Applied between HIN, LIN and V
−0.3~V + 0.3
IN
SS
DD
BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified)
V
Maximum Repetitive Reverse Voltage
Forward Current
600
0.5
1.5
V
A
A
RRM
I
F
T = 25C, T < 150C (Note 2)
C J
I
Forward Current (Peak)
T = 25C, T < 150C, Under 1 ms
C J
Pulse Width (Note 2)
FP
THERMAL RESISTANCE
R
Junction to Case Thermal Resistance
Inverter IGBT Part (per 1/6 Module)
(Note 1)
12.2
C/W
ms
th(j−c)Q
TOTAL SYSTEM
t
Short Circuit Withstand Time
V
= V 16.5 V, V 400 V,
3
SC
DD
BS
PN
T = 150C, Non−repetitive
J
T
Operating Junction Temperature
−40~150
C
C
J
T
Storage Temperature
Isolation Voltage
−40~125
STG
V
ISO
60 Hz, Sinusoidal, AC 1 minute,
Connect Pins to Heat Sink Plate
1500
V
rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. For the measurement point of case temperature T , Please refer to Figure 4.
C
2. These values had been made an acquisition by the calculation considered to design factor.
3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges.
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2
NFA50460R4B, NFA50460R47
PIN DESCRIPTION
Pin No.
Pin Name
Description
1
2
3
4
IC Common Supply Ground
V
SS
High−Side Bias Voltage for U phase IGBT Driving
Low−Side Bias Voltage for U phase IC and IGBT Driving
Signal Input for High−Side U Phase
V
B(U)
V
DD(U)
HIN
(U)
5
6
7
Signal Input for Low−Side U Phase
N.C
LIN
(U)
N.C
High−Side Bias Voltage for V phase IGBT Driving
V
B(V)
8
Low−Side Bias Voltage for V phase IC and IGBT Driving
Signal Input for High−Side V Phase
V
DD(V)
9
HIN
(V)
10
11
12
13
14
Signal Input for Low−Side V Phase
LIN
(V)
Voltage Output for IC Temperature Sensing Unit
High−Side Bias Voltage for W phase IGBT Driving
Low−Side Bias Voltage for W phase IC and IGBT Driving
Signal Input for High−Side W Phase
VTS
V
B(W)
V
DD(W)
HIN
(W)
(W)
15
16
17
18
19
20
21
22
23
Signal Input for Low−Side W Phase
LIN
N.C
N.C
P
Positive DC–Link Input
U, V
Output for U Phase & High−Side Bias Voltage GND for U phase IGBT Driving
Negative DC–Link Input for U Phase
S(U)
U
N
N
Negative DC–Link Input for V Phase
V
V, V
Output for V Phase & High−Side Bias Voltage GND for V phase IGBT Driving
Negative DC–Link Input for W Phase
S(V)
W
N
W, V
Output for W Phase & High−Side Bias Voltage GND for W phase IGBT Driving
S(W)
(1) VSS
(2) VB(U)
(17) P
(3) VDD(U)
(4) HIN(U)
(5) LIN(U)
VDD
HIN
LIN
VSS
VB
HO
VS
(18) U, VS(U)
LO
(6) N.C.
(19) NU
(20) NV
(7) VB(V)
VDD
HIN
LIN
VSS
VB
HO
(8) VDD(V)
(9) HIN(V)
(10) LIN(V)
(21) V, VS(V)
VS
LO
(11) VTS
VTS
(12) VB(W)
(13) VDD(W)
(14) HIN(W)
(15) LIN(W)
VDD
HIN
LIN
VSS
VB
HO
(22) NW
(23) W, VS(W)
VS
LO
(16) N.C.
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
NOTE:
4. Emitter terminal of each low−side IGBT is not connected to supply ground or bias voltage ground inside Motion SPM 5 product. External
connections should be made as indicated in Figure 3.
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3
NFA50460R4B, NFA50460R47
ELECTRICAL CHARACTERISTICS (T = 25C, V = V = 15 V unless otherwise noted)
J
DD
BS
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
INVERTER PART (Each IGBT unless otherwise specified)
BV
Collector−Emitter Breakdown Voltage
Collector−Emitter Leakage Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
V
= 0 V, I = 1 mA (Note 5)
600
−
−
−
1
V
mA
V
CES
IN
D
I
= 0 V, V = 600 V
−
CES
IN
CE
V
= V = 15 V, V = 5 V, I = 4 A, T = 25C
−
1.75
2.0
1.87
2.0
370
2.2
−
CE(SAT)
DD
DD
BS
IN
C
J
= V = 15 V, V = 5 V, I = 4 A, T = 150C
−
BS
IN
C
J
V
Emitter−Collector Forward Voltage
= 0 V, I = 4 A, T = 25C
−
2.3
−
V
F
IN
F
J
= 0 V, I = 4 A, T = 150C
−
IN
F
J
t
Switching Times
V
V
= 300 V, V = V = 15 V, I = 4 A
−
−
ON
PN
IN
DD
BS
C
ns
ns
ns
mJ
mJ
= 0 V 5 V, Inductive Load,
t
−
−
−
−
358
151
150
35
−
−
−
−
High− and Low−Side IGBT Switching (Note 6)
OFF
t
rr
E
ON
E
OFF
RBSOA Reverse−Bias Safe Operating Area
V
V
= 400 V, V = V = 15 V, I = I ,
CP
Full Square
PN
CE
DD
BS
C
= BV
, T = 150C
CES
J
High− and Low−Side IGBT Switching (Note 7)
CONTROL PART (Each HVIC Unless Otherwise Specified)
I
Quiescent V Current
V
DD
V
BS
V
DD
= 15 V, V = 0 V Applied between V and
−
−
−
−
−
−
200
100
900
mA
mA
mA
QDD
DD
IN
DD
V
SS
I
Quiescent V Current
= 15 V, V = 0 V Applied between V
− U,
QBS
PDD
BS
IN
B(U)
V
− V, V
− W
B(V)
B(W)
I
Operating V Supply Current
− V
V
DD
= 15 V, f
= 20 kHz,
DD
SS
PWM
duty = 50%, Applied to One
PWM Signal Input for
Low−Side
I
Operating V Supply Current
V
B(U)
V
B(V)
V
B(W)
− V
S(V)
− V
,
V
PWM
= V = 15 V,
−
−
800
mA
PBS
BS
S(U)
DD
BS
− V
,
f
= 20 kHz,
Duty = 50%, Applied to
One PWM Signal Input
for High−Side
S(W)
UV
UV
UV
UV
V
Low−Side Under−voltage Protection
V
V
V
V
V
Under−voltage Protection Detection Level
Under−voltage Protection Reset Level
Under−voltage Protection Detection Level
Under−voltage Protection Reset Level
7.4
8.0
7.4
8.0
600
−
8.0
8.9
8.0
8.9
790
−
9.4
9.8
9.4
9.8
980
2.9
−
V
V
DDD
DDR
BSD
BSR
TS
DD
DD
BS
BS
DD
(Figure 8)
High−Side Under−voltage Protection
(Figure 8)
V
V
IC Temperature Sensing Voltage Output
ON Threshold Voltage
= 15 V, T
= 25C (Note 8)
mV
V
driver
V
Logic HIGH Level
Logic LOW Level
Applied between HIN, LIN
and V
IH
SS
V
OFF Threshold Voltage
0.8
−
V
IL
BOOTSTRAP DIODE PART (Each bootstrap diode unless otherwise specified)
V
Forward Voltage
I = 0.1 A, T = 25C (Note 9)
−
−
2.5
80
−
−
V
FB
rrB
F
C
t
Reverse Recovery Time
I = 0.1 A, T = 25C
ns
F
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NFA50460R4B, NFA50460R47
RECOMMENDED OPERATING CONDITION
Symbol
Parameter
Supply Voltage
Conditions
Min.
> V
Typ.
300
15.0
15.0
−
Max.
400
Unit
V
V
PN
V
DD
Applied between P and N
DD
Control Supply Voltage
Applied between V and V
14.0
16.5
18.5
V
DD
SS
V
BS
High−Side Bias Voltage
Applied between V and V
S
13.0
3.0
0
V
B
V
IN(ON)
Input ON Threshold Voltage
Input OFF Threshold Voltage
Blanking Time for Preventing Arm−Short
PWM Switching Frequency
Applied between HIN, LIN and V
V
DD
V
SS
V
−
0.6
−
V
IN(OFF)
t
V
= V = 13.5~16.5 V, T 150C
1.0
−
−
ms
kHz
dead
DD
BS
J
f
T 150C
J
−
20
PWM
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Built in Bootstrap Diode V −I Characteristic
F
F
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V [V]
F
Figure 2. Built−in Bootstrap Diode Characteristics (Typical)
NOTES:
5. BV
is the absolute maximum voltage rating between collector and emitter terminal of each IGBT inside Motion SPM 5 product. V should
CES
PN
be sufficiently less than this value considering the effect of the stray inductance so that V should not exceed BV
in any case.
CE
CES
6. t and t
include the propagation delay time of the internal driver IC. Listed values are measured at the laboratory test condition, and
ON
OFF
they can be different according to the field applications due to the effect of different printed circuit boards and wirings. Please see Figure 6
for the switching time definition with the switching test circuit of Figure 7.
7. The peak current and voltage of each IGBT during the switching operation should be included in the Safe Operating Area (SOA). Please
see Figure 7 for the RBSOA test circuit that is same as the switching test circuit.
8. VTS is only for sensing temperature of module and cannot shutdown IGBTs automatically.
9. Built in bootstrap diode includes around 15 W resistance characteristic. Please refer to Figure 2.
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5
NFA50460R4B, NFA50460R47
These values depend on PWM
control algorithm
* Example circuit: V−phase
15−V
Line
C1
P
VDC
HIN
0
LIN
0
Output
Note
VB
HO
VS
VDD
HIN
LIN
Inverter
Output
Z
0
Both IGBT Off
R
5
0
1
Low−side IGBT On
High−side IGBT On
Shoot−through
Same as (0,0)
Micom
1
0
V
DC
C
3
C
VSS
LO
1
1
Forbidden
Z
5
R3
VTS
N
Open Open
−Leg Diagram of SPM
One
C4
C
2
10mF
*
Example of bootstrap paramt:ers
C1 =C2 =1mF ceramic capacito,r
Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters
NOTES:
10.Parameters for bootstrap circuit elements are dependent on PWM algorithm. Typical example of parameters is shown above.
11. RC coupling (R and C ) and C at each input of SPM and Micom (Indicated as dotted lines) may be used to prevent improper signal due
5
5
4
to surge noise.
12.Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage.
Bypass capacitors such as C , C and C should have good high−frequency characteristics to absorb high−frequency ripple current.
1
2
3
Figure 4. Case Temperature Measurement
NOTE:
13.Attach the thermocouple on top of the heatsink−side of SPM (between SPM and heatsink if applied) to get the correct temperature
measurement.
4.0
Min
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Typ
Max
0
20
40
60
80
100
[C]
120
140
160
T
driver
Figure 5. Temperature Profile of VTS
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NFA50460R4B, NFA50460R47
ton
toff
trr
VIN
Vce
VIN
Vce
100% IC
90% IC
10% IC
10% VCE
10% VCE
10% IC
Ic
Ic
tc(off)
tc(on)
(a) Turn−on
(b) Turn−off
Figure 6. Switching Time Definitions
CBS
V
DD
IC
VDD
HIN
LIN
VSS
VB
HO
VS
L
VDC
+
VCE
−
LO
One−leg Diagram of SPM
Figure 7. Switching and RBSOA (Single−pulse) Test Circuit (Low−side)
Input Signal
UV Protection
RESET
DETECTION
RESET
Status
High−side Supply, V
UV
UV
BS
BSR
DDR
Low−side Supply, V
DD
UV
UV
BSD
DDD
IGBT Current
Figure 8. Under−Voltage Protection (High−side and Low−side)
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NFA50460R4B, NFA50460R47
C
1
(1) VSS
(17) P
(2) VB(U)
(3) VDD(U)
VDD
HIN
LIN
VSS
VB
HO
VS
R
5
(4) HIN
(U)
(18) U, VS(U)
(5) LIN
(U)
C
3
VDC
LO
C
5
C
2
(6) N.C.
(19) NU
(20) NV
(7) VB(V)
(8) VDD(V)
VB
HO
VS
VDD
HIN
LIN
(9) HIN
(V)
(21) V, VS(V)
(10) LIN(V)
M
LO
VSS
(11) VTS
VTS
(12) VB(W)
(22) NW
(13) VDD(W)
VDD
HIN
LIN
VSS
VB
(14) HIN
(W)
HO
(23) W, VS(W)
(15) LIN(W)
(16) N.C.
VS
LO
C
6
R
4
For current sensing and protection
15V
Supply
C
4
R
3
Figure 9. Example of Application Circuit
NOTES:
14.About pin position, refer to Figure 1.
15.RC coupling (R and C , R and C ) and C at each input of Motion SPM 5 product and Micom are useful to prevent improper input signal
5
5
4
4
6
caused by surge noise.
16.The voltage drop across R affects the low side switching performance and the bootstrap characteristics since it is placed between V and
3
SS
the emitter terminal of the low side IGBT. For this reason, the voltage drop across R should be less than 1 V in the steady−state.
3
17.Ground wires and output terminals, should be thick and short in order to avoid surge voltage and malfunction of IC.
18.All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting
high−frequency ripple current.
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NFA50460R4B, NFA50460R47
TYPICAL PERFORMANCE CHARACTERISTICS
8
8
7
6
5
4
3
2
1
0
=25℃
TJ
V
V
V
=13V
=15V
=20V
DD
DD
DD
7
=150℃
TJ
6
5
4
3
2
1
=25℃
T
VDD =15V
J
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V , Collector−Emitter Voltage [V]
CE(sat)
V , Collector−Emitter Voltage [V]
CE(sat)
Figure 10. Typ. Collector−Emitter Saturation
Figure 11. Typ. Collector−Emitter Saturation
Voltage
Voltage
1000
8
=25℃
=25℃
TJ
High side @TJ
7
=150℃
High side @TJ
Low side @TJ
Low side @TJ
=150℃
TJ
=25℃
800
600
400
200
6
5
4
3
2
1
0
=150℃
VDC =300V
V
DD =15V
0
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V , Emitter−Collector Voltage [V]
F
I , Collector Current [A]
C
Figure 12. Typ. Emitter−Collector Forward
Figure 13. Typ. Turn On Switching Energy Loss
Voltage
100
=25℃
High side @T J
High side @T J
Low side @T J
Low side @T J
V DC =300V
V DD =15V
140
120
100
80
J=25℃
=150℃
High side @T
90
80
70
60
50
40
30
20
10
=150℃
=25℃
High side @TJ
Low side @TJ
Low side @TJ
=25℃
=150℃
=150℃
60
40
VDC =300V
20
V
DD =15V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 14. Typ. Turn Off Switching Energy Loss
Figure 15. Typ. Reverse Recovery Energy Loss
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NFA50460R4B, NFA50460R47
TYPICAL PERFORMANCE CHARACTERISTICS
600
550
500
450
400
350
300
250
500
=25℃
=150℃
=25℃
High side @TJ
High side @TJ
Low side @TJ
Low side @TJ
=25℃
=150℃
=25℃
High side @TJ
450
High side @TJ
Low side @TJ
400
=150℃
=150℃
Low side @TJ
350
300
250
200
150
VDC =300V
VDC =300V
VDD =15V
100
VDD =15V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 16. Typ. Turn On Propagation Delay Time
Figure 17. Typ. Turn On Switching Time
1100
500
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
VDC =300V
VDD =15V
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
VDC =300V
VDD =15V
1000
900
800
700
600
500
400
300
200
400
300
200
100
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I , Collector Current [A]
C
I , Collector Current [A]
C
Figure 18. Typ. Turn Off Propagation Delay Time
Figure 19. Typ. Turn Off Switching Time
400
10
=25℃
High side @T
J
360
=150℃
High side @T
J
=25℃
Low side @T
J
320
=150℃
Low side @T
J
280
1
240
200
160
0.1
120
VDC =300V
VDD =15V
80
40
0.01
0
1
2
3
4
5
6
7
8
1E−6
1E−5
1E−4
1E−3
0.01
0.1
1
10
100
I , Collector Current [A]
C
t , Pulse Width [s]
p
Figure 20. Typ. Reverse Recovery Time
Figure 21. RC−IGBT Transient Thermal Resistance
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPM5E−023 / 23LD, PDD STD, FULL PACK, DIP TYPE
CASE MODEJ
ISSUE O
DATE 31 JAN 2017
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DESCRIPTION:
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPM5H−023 / 23LD, PDD STD, SPM23−BD (Ver1.5) SMD TYPE
CASE MODEM
ISSUE O
DATE 31 JAN 2017
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DESCRIPTION:
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SPM5H−023 / 23LD, PDD STD, SPM23−BD (Ver1.5) SMD TYPE
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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