NFP36060L42T [ONSEMI]

SPM® 3 27 SeriesIntelligent Power Module (IPM) Bridgeless PFC, 600 V, 60 A;
NFP36060L42T
型号: NFP36060L42T
厂家: ONSEMI    ONSEMI
描述:

SPM® 3 27 SeriesIntelligent Power Module (IPM) Bridgeless PFC, 600 V, 60 A

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NFP36060L42T  
SPM) 3 27 Series Intelligent  
Power Module (IPM)  
Bridgeless PFC, 600 V, 60 A  
The NFP36060L42T is an advanced PFC SPM 3 module providing  
a fully−featured, high−performance Bridgeless PFC (Power Factor  
Correction) input power stage for consumer, medical, and industrial  
applications. These modules integrate optimized gate drive of the  
built−in IGBTs to minimize EMI and losses, while also providing  
multiple on−module protection features including under−voltage  
lockout, short−circuit current protection, thermal monitoring, and  
fault reporting. These modules also feature high−performance output  
diodes and shunt resistor for additional space savings and mounting  
convenience.  
www.onsemi.com  
Features  
UL Certified No. E209024 (UL1557)  
600 V – 60 A 2−Phase Bridgeless PFC with Integral Gate Drivers  
and Protection  
Very Low Thermal Resistance using AlN DBC Substrate  
th  
Low−Loss Field Stop 4 Generation IGBT  
Optimized for 20 kHz Switching Frequency  
Built−in NTC Thermistor for Temperature Monitoring  
Built−in Shunt Resistor for Current Sensing  
Isolation Rating of 2500 Vrms / 1 min  
3D Package Drawing  
(Click to Activate 3D Content)  
SPMHC−027  
CASE MODFJ  
These Devices are RoHS Compliant  
Typical Applications  
MARKING DIAGRAM  
2−Phase Bridgeless PFC Converter (AC 200V Class)  
HVAC (Commercial Air−conditioner)  
Integrated Power Functions  
600 V – 60 A 2−Phase Bridgeless PFC for Single−phase AC / DC  
Power Conversion (refer to Figure 2)  
Integrated Drive, Protection, and System Control Functions  
For IGBTs: Gate−drive Circuit, Short−Circuit Protection (SCP)  
Control Circuit, Under−Voltage Lock−Out Protection (UVLO)  
Fault Signaling: Corresponding to UV and SC faults  
Built−in Thermistor: Temperature Monitoring  
ON  
= ON Semiconductor Logo  
NFP36060L42T  
XXX  
Y
= Specific Device Code  
= Lot Number  
= Year  
Input Interface: Active−HIGH Interface, works with 3.3 V / 5 V  
Logic, Schmitt−Trigger Input  
WW  
= Work Week  
Related Resources  
AN−9041 * Bridgeless PFC SPM 3 Series Design Guide  
AN−9086 * SPM 3 Package Mounting Guidance  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 7 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
November, 2019 − Rev. 1  
NFP36060L42T/D  
NFP36060L42T  
PIN CONFIGURATION  
(1) VDD  
(2) VSS  
(3) N.C.  
(4) IN(R)  
(5) IN(S)  
(6) VFO  
(7) CFOD  
(8) CIN  
(21) VAC−  
(22) NSENSE  
(23) NC  
(9) N.C.  
(10) N.C.  
(24) N  
Case Temperature (TC)  
(11) N.C.  
(12) N.C.  
Detecting Point  
(25) R  
(26) S  
(27) PR  
(13) N.C.  
(14) N.C.  
(15) N.C.  
(16) N.C.  
(17) N.C.  
(18) N.C.  
DBC Substrate  
(19) RTH  
(20) VTH  
Figure 1. Pin Configuration − Top View  
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS  
(20) VTH  
(19) RTH  
NTC  
Thermistor  
(27) PR  
D1  
D2  
(26) S  
(25) R  
(8) CIN  
CIN  
CFOD  
(7) CFOD  
(6) VFO  
VFO  
Q1  
D3  
Q2  
D4  
OUT(S)  
OUT(R)  
(5) IN(S)  
(4) IN(R)  
IN(S)  
IN(R)  
(24) N  
(22) NSENSE  
(21) VAC−  
(2) VSS  
(1) VDD  
VSS  
VDD  
Shunt  
Resistor  
Figure 2. Internal Block Diagram  
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2
 
NFP36060L42T  
Table 1. PIN DESCRIPTION  
Pin Number  
Pin Name  
VDD  
VSS  
IN(R)  
IN(S)  
VFO  
CFOD  
CIN  
Pin Description  
1
Common Supply Voltage of IC for IGBTs Driving  
Common Supply Ground  
2
4
Signal Input for Low−Side R−Phase IGBT  
Signal Input for Low−Side S−Phase IGBT  
Fault Output  
5
6
7
Capacitor for Fault Output Duration Selection  
Capacitor (Low−Pass Filter) for Short−Circuit Current Detection  
Series Resistor for The Use of Thermistor  
Thermistor Bias Voltage  
8
19  
RTH  
VTH  
VAC−  
NSENSE  
N
20  
21  
Current Sensing Terminal  
22  
Current Sensing Reference Terminal  
Negative Rail of DC−Link  
24  
25  
26  
R
Output for R−Phase  
S
Output for S−Phase  
27  
PR  
Positive Rail of DC−Link  
3, 9~18, 23  
N.C.  
No Connection  
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3
NFP36060L42T  
Table 2. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Conditions  
Rating  
Unit  
CONVERTER PART  
Vi  
Input Supply Voltage  
Applied between R − S  
264  
500  
450  
500  
600  
600  
60  
Vrms  
V
Vi  
Input Supply Voltage (Surge)  
Output Voltage  
Applied between R − S  
Applied between P − N  
Applied between P − N  
Breakdown Voltage  
(Surge)  
VPN  
VPN  
V
Output Supply Voltage (Surge)  
Collector - Emitter Voltage  
Repetitive Peak Reverse Voltage  
Diode Forward Current  
V
(Surge)  
VCES  
VRRM  
IF  
V
Breakdown Voltage  
V
Tc = 25°C, Tj 150°C (Note 1)  
A
IFSM  
Peak Forward Surge Current  
Non−Repetitive, 60 Hz Single Half−Sine Wave  
(Note 1)  
350  
A
Ic  
Each IGBT Collector Current  
VDD = 15 V, Tc = 25°C, Tj 150°C (Note 1)  
60  
90  
A
A
Icp  
Each IGBT Collector Current (Peak)  
Tc = 25°C, Tj 150°C, Under 1 ms Pulse Width  
(Note 1)  
Pc  
PRSH  
Tj  
Collector Dissipation  
Tc = 25°C per IGBT (Note 1)  
Tc < 125°C  
160  
2
W
W
Power Rating of Shunt Resistor  
Operating Junction Temperature  
−40 ~ 150  
_C  
CONTROL PART  
VDD  
VIN  
VFO  
IFO  
VCIN  
Tj  
Control Supply Voltage  
Applied between VDD − VSS  
Applied between IN(X), IN(Y) − VSS  
Applied between VFO − VSS  
Sink Current at VFO pin  
20  
V
V
Input Signal Voltage  
~0.3 ~ VDD + 0.3  
~0.3 ~ VDD + 0.3  
2
Fault Output Supply Voltage  
Fault Output Current  
V
mA  
V
Current Sensing Input Voltage  
Operating Junction Temperature  
Applied between CIN − VSS  
~0.3 ~ VDD + 0.3  
−40 ~ 150  
_C  
TOTAL SYSTEM  
Tc  
Module Case Operation Temperature  
See Figure 1  
−40 ~ 125  
−40 ~ 125  
2500  
_C  
_C  
Tstg  
Viso  
Storage Temperature  
Isolation Voltage  
60 Hz, Sinusoidal, AC 1 Minute, Connection Pins  
to Heat Sink Plate  
Vrms  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. These values had been made an acquisition by the calculation considered to design factor.  
Table 3. THERMAL RESISTANCE  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
0.78  
1.50  
0.85  
Unit  
_C/W  
_C/W  
_C/W  
R
Each IGBT under Operating Condition  
Each Boost Diode under Operating Condition  
Each Rectifier under Operating Condition  
th(j−c)Q  
Junction−to−Case Thermal  
Resistance (Note 2)  
R
th(j−c)D  
R
th(j−c)R  
2. For the measurement point of case temperature (Tc), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please  
®
refer to application note AN−9190 (Impact of DBC Oxidation on SPM Module Performance).  
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4
 
NFP36060L42T  
Table 4. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified.)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
CONVERTER PART  
VCE(sat) Collector − Emitter  
Saturation Voltage  
VDD = 15 V, VIN = 5 V, Ic = 50 A, Tj = 25°C  
1.55  
2.05  
V
VFH  
VFL  
ton  
High−Side Diode Forward Voltage IFH = 50 A, Tj = 25°C  
Low−Side Diode Forward Voltage IFL = 50 A, Tj = 25°C  
2.40  
1.20  
990  
120  
930  
190  
65  
2.90  
1.60  
V
V
Switching Characteristics  
VPN = 400 V, VDD = 15 V, Ic = 60 A  
Tj = 25°C  
ns  
ns  
ns  
ns  
ns  
A
tc(on)  
toff  
VIN = 0 V ´ 5 V, Inductive Load  
See Figure 3  
(Note 3)  
tc(off)  
trr  
Irr  
5
ICES  
Collector − Emitter Leakage  
Current  
VCE = VCES  
VR = VRRM  
1
mA  
IR  
Boost Diode Revers Leakage  
Current  
1
mA  
RSENSE Collector Sensing Resistor  
1.83  
2.00  
2.17  
mW  
CONTROL PART  
IQDD  
Quiescent VDD Supply Current  
VDD = 15 V, IN(X), IN(Y) − VSS = 0 V,  
Supply Current between VDD and VSS  
5.00  
mA  
mA  
IPDD  
Operating VDD Supply Current  
VDD = 15 V, FPWM = 20 kHz, Duty = 50%,  
Applied to one PWM Signal Input per IGBT,  
Supply Current between VDD and VSS  
10.00  
VFOH  
VFOL  
Fault Output Voltage  
VDD = 15 V, VFO Circuit: 10 kW VCIN = 0 V  
to 5 V Pull−up  
4.50  
V
VDD = 15 V, IFO = 1 mA  
VDD = 15 V  
VCIN = 1 V  
CIN − VSS  
0.45  
9.8  
10.3  
0.50  
0.50  
0.55  
13.3  
13.8  
2.6  
V
V
VCIN(ref) Short Circuit Trip Level  
UVDDD  
UVDDR  
Supply Circuit Under−Voltage  
Protection  
Detection Level  
Reset Level  
V
V
VIN(ON) ON Threshold Voltage  
VIN(OFF) OFF Threshold Voltage  
Applied between IN(X), IN(Y) − VSS  
V
0.8  
25  
V
tFOD  
RTH  
Fault−Out Pulse Width  
CFOD = 33 nF (Note 4)  
ms  
kW  
kW  
Resistance of Thermistor  
at TTH = 25°C  
at TTH = 85°C  
See Figure 4  
(Note 5)  
50  
5.76  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. ton and toff include the propagation delay of the internal drive IC. tc(on) and tc(off) are the switching times of IGBT under the given  
gate−driving condition internally. For the detailed information, please see Figure 3.  
4. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:  
CFOD = 0.89 x 10−6 x tFOD [F]  
5. TTH is the temperature of thermistor itself. To know case temperature (Tc), conduct experiments considering the application.  
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5
 
NFP36060L42T  
100% Ic 100% Ic  
trr  
Vce  
Ic  
Ic  
Vce  
VIN  
VIN  
ton  
toff  
tc(on)  
tc(off)  
10% Ic  
VIN(ON)  
VIN(OFF)  
10% Vce  
10% Ic  
10% Vce  
90% Ic  
(a) turn−on  
(b) turn−off  
Figure 3. Switching Time Definition  
Figure 4. R−T Curve of Built−in Thermistor  
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6
NFP36060L42T  
Table 5. RECOMMENDED OPERATIONG CONDITIONS  
Value  
Typ  
Min  
160  
Max  
264  
400  
16.5  
+1  
Symbol  
Vi  
Parameter  
Input Supply Voltage  
Supply Voltage  
Conditions  
Applied between R − S  
Unit  
Vrms  
V
VPN  
Applied between P − N  
280  
15.0  
VDD  
Control Supply Voltage  
Control Supply Variation  
PWM Input Signal  
Applied between VDD − VSS  
13.5  
−1  
V
dVDD / dt  
FPWM  
Tj  
V / ms  
kHz  
°C  
−40°C Tc 125°C, −40°C Tj 150°C  
20  
Junction Temperature  
−40  
150  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
PACKAGE MARKING AND ODERING INFORMATION  
Device  
Device Marking  
Package  
Shipping  
NFP36060L42T  
NFP36060L42T  
SPMHC-027  
10 Units / Tube  
MECHANICAL CHARACTERISTICS AND RATINGS  
Value  
Min  
0
Typ  
Max  
+120  
0.72  
Parameter  
Device Flatness  
Conditions  
Unit  
mm  
See Figure 5  
Mounting Torque  
Mounting Screw: M3  
Recommended 0.62 N m  
0.51  
0.62  
N m  
See Figure 6 (Note 6, 7)  
Weight  
15.00  
g
6. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat−sink destruction.  
7. Avoid one−sided tightening stress. Uneven mounting can cause the DBC substrate of package to be damaged. The pre−screwing torque  
is set to 20 ~ 30% of maximum torque rating.  
Pre−Screwing: 1 2  
Final Screwing: 2 1  
2
1
Figure 5. Flatness Measurement Position  
Figure 6. Mounting Screws Torque Order  
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7
 
NFP36060L42T  
TIME CHARTS OF SPMs PROTECTIVE FUNCTION  
Input Signal  
Protection  
Circuit State  
RESET  
SET  
RESET  
UVDDR  
a1  
a6  
UVDDD  
Control  
Supply Voltage  
a3  
a4  
a2  
a7  
Output Current  
a5  
Fault Output Signal  
a1: Control supply voltage rises: after the voltage rises UVDDR, the circuits start to operate when the next input is applied.  
a2: Normal operation: IGBT ON and carrying current.  
a3: Under−voltage detection (UVDDD).  
a4: IGBT OFF in spite of control input condition.  
a5: Fault output operation starts.  
a6: Under−voltage reset (UVDDR).  
a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.  
Figure 7. Under−Voltage Protection  
Lower Arms  
Control Input  
b6  
b7  
Protection  
Circuit state  
SET  
RESET  
Internal IGBT  
GateEmitter Voltage  
b4  
b3  
b2  
Internal delay  
at protection circuit  
SC current trip level  
b8  
b1  
Output Current  
SC reference voltage  
Sensing Voltage  
of Sense Resistor  
RC filter circuit  
time constant  
delay  
c5  
Fault Output Signal  
(With the external over current detection circuit)  
b1: Normal operation: IGBT ON and carrying current.  
b2: Short−Circuit current detection (SC trigger).  
b3: All IGBTs gate are hard interrupted.  
b4: All IGBTs turn OFF.  
b5: Fault output operation starts with a fixed pulse width.  
b6: Input HIGH − IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.  
b7: Fault output operation finishes, but IGBT doesn’t turn ON until triggering next signal from LOW to HIGH.  
b8: Normal operation: IGBT ON and carrying current.  
Figure 8. Short−Circuit Current Protection  
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8
NFP36060L42T  
Vac  
PFCM  
5V line  
VTH  
RTH  
NTC  
Thermistor  
Temp .  
Monitoring  
15V line  
R4  
PR  
VDD  
VSS  
VDD  
VSS  
C2  
C4  
S
R
IN(S)  
IN(R)  
M
C
U
IN(S)  
IN(R)  
3Phase  
Inverter  
Gating S  
Gating R  
R1  
R1  
OUT(S)  
OUT(R)  
5V line  
R1  
C1  
C1  
R2  
C1  
VFO  
N
Fault  
VFO  
C1  
CFOD  
NSENSE  
VAC −  
Shunt  
Resistor  
CFOD  
C5  
Current  
Sensing  
for  
CIN  
CIN  
R3  
Control  
C3  
Figure 9. Typical Application Circuit  
8. To avoid malfunction, the wiring of each input should be as short as possible (Less than 2 − 3 cm).  
9. VFO output is an open−drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor  
that makes IFO up to 2 mA.  
10.Input signal is active−HIGH type. There is a 5 kW resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits should  
be adopted for the prevention of input signal oscillation. RC coupling at each input might change depending on the PWM control scheme  
used in the application and the wiring impedance of the application’s printed circuit board. R1C1 time constant should be selected in the range  
50 ~ 150 ns (Recommended R1 = 100 W, C1 = 1 nF).  
11. To prevent error of the protection function, the wiring related with R3 and C3 should be as short as possible.  
12.In the short−circuit current protection circuit, select the R3C3 time constant in the range 3.0 ~ 4.0 ms. Do enough evaluation on the real system  
because over−current protection time may vary wiring pattern layout and value of the R3C3 time constant.  
13.Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.  
14.Relays are used in most systems of electrical equipment in industrial application. In these cases, there should be sufficient distance between  
the MCU and the relays.  
15.The zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair  
of control supply terminals (Recommended zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 W).  
16.Please choose the electrolytic capacitor with good temperature characteristic in C2. Choose 0.1 ~ 0.2 mF R−category ceramic capacitors  
with good temperature and frequency characteristics in C4.  
SPM is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
www.onsemi.com  
9
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
CASE MODFJ  
ISSUE O  
DATE 31 JAN 2017  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13563G  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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