NGTB25N120FLWG [ONSEMI]
IGBT; IGBT
| 型号： | NGTB25N120FLWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT |
| 文件： | 总10页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB25N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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Features
25 A, 1200 V
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• 10 ms Short Circuit Capability
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
VCEsat = 2.0 V
Eoff = 0.95 mJ
C
Typical Applications
• Solar Inverter
• UPS Inverter
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
IC
1200
V
A
Collector current
@ TC = 25°C
50
25
@ TC = 100°C
G
TO−247
CASE 340L
STYLE 4
C
Pulsed collector current, T
ICM
IF
200
A
A
pulse
E
limited by T
Jmax
Diode forward current
@ TC = 25°C
50
25
@ TC = 100°C
MARKING DIAGRAM
Diode pulsed current, T
limited
IFM
200
A
pulse
by T
Jmax
Gate−emitter voltage
VGE
PD
$20
V
Power Dissipation
W
@ TC = 25°C
@ TC = 100°C
192
77
25N120FL
AYWWG
Short Circuit Withstand Time
= 15 V, V = 500 V, T ≤ 150°C
T
10
ms
°C
SC
V
GE
CE
J
Operating junction temperature
range
T
−55 to +150
J
Storage temperature range
T
−55 to +150
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds(note 3)
T
SLD
260
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NGTB25N120FLWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 0
NGTB25N120FLW/D
NGTB25N120FLWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.65
1.5
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
40
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 25 A
V
CEsat
1.55
−
2.0
2.2
2.2
−
GE
C
V
GE
= 15 V, I = 25 A, T = 150°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.5
2
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 150°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
5200
144
94
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
220
40
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 600 V, I = 25 A, V = 15 V
C GE
ge
gc
Q
98
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
91
26
d(on)
t
r
Turn−off delay time
t
228
160
1.50
0.95
2.45
88
d(off)
T = 25°C
J
V
= 600 V, I = 25 A
C
CC
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
ns
GE
E
ts
t
t
d(on)
t
r
28
Turn−off delay time
240
270
1.8
d(off)
T = 125°C
J
V
CC
= 600 V, I = 25 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
mJ
GE
1.6
E
ts
3.4
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2
NGTB25N120FLWG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
DIODE CHARACTERISTIC
Forward voltage
Test Conditions
Symbol
Min
Typ
Max
Unit
V
= 0 V, I = 25 A
V
F
2.2
2.5
2.8
V
GE
F
V
GE
= 0 V, I = 25 A, T = 150°C
F J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
T = 25°C
t
240
1.5
15
ns
mc
A
J
rr
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
T = 125°C
t
rr
260
2.0
19
ns
mc
A
J
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
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3
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
300
T = 25°C
J
T = 150°C
J
250
200
150
100
50
V
GE
= 20 to 15 V
V
GE
= 20 to 15 V
13 V
13 V
11 V
11 V
10 V
9 V
10 V
9 V
8 V
7 V
8 V
7 V
0
0
0
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
300
250
200
150
100
50
200
175
150
125
100
75
T = −40°C
J
V
GE
= 20 to 15 V
13 V
T = 25°C
J
T = 150°C
J
11 V
10 V
50
9 V
8 V
7 V
25
0
0
1
2
3
4
5
6
7
8
4
8
12
16
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
120
100
80
10,000
1000
C
ies
T = 25°C
J
60
100
10
40
C
T = 125°C
J
oes
20
0
C
res
25
50
75
100
125 150
175 200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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4
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
2.5
16
12
8
V
V
I
= 600 V
= 15 V
= 25 A
CE
GE
V
CE
= 600 V
2
1.5
1
C
E
on
Rg = 10 W
E
off
4
0.5
0
0
0
50
100
150
200
250
300
350
0
8
5
20
40
60
80 100
120 140 160
Q , GATE CHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
G
J
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
1000
100
4
V
V
= 600 V
= 15 V
CE
GE
3.5
3
t
f
T = 150°C
Rg = 10 W
J
t
d(off)
t
2.5
2
d(on)
t
r
E
on
1.5
1
10
1
V
V
= 600 V
= 15 V
= 25 A
CE
GE
E
off
I
C
0.5
0
Rg = 10 W
0
20
40
60
80
100
120
140
160
12 16 20 24 28 32 36 40 44 48 52
T , JUNCTION TEMPERATURE (°C)
I , COLLECTOR CURRENT (A)
C
J
Figure 9. Switching Time vs. Temperature
Figure 10. Energy Loss vs. IC
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
V
= 600 V
= 15 V
CE
GE
t
f
I
C
= 25 A
T = 150°C
E
on
t
d(off)
J
t
d(on)
E
off
t
r
10
1
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
Rg = 10 W
J
8
12 16 20 24 28 32 36 40 44 48 52
15
25
35
45
55
65
75
85
I , COLLECTOR CURRENT (A)
C
Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Energy Loss vs. Rg
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5
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
10,000
1000
3.5
V
I
= 15 V
= 25 A
GE
3
2.5
2
C
t
d(off)
Rg = 10 W
T = 150°C
J
E
on
t
f
E
off
t
d(on)
100
10
1
t
1.5
1
r
V
V
= 600 V
= 15 V
CE
GE
= 25 A
0.5
0
I
C
T = 150°C
J
5
15
25
35
45
55
65
75
85
375 425 475
525
575
625
675 725 775
Rg, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg
Figure 14. Energy Loss vs. VCE
1000
100
1000
100
10
1 ms
50 ms
t
f
t
d(off)
100 ms
t
d(on)
dc operation
t
r
1
10
1
Single Nonrepetitive
V
= 15 V
= 25 A
GE
Pulse T = 25°C
C
I
C
0.1
Curves must be derated
linearly with increase
in temperature
Rg = 10 W
T = 150°C
J
0.01
375 425
475
525
575
625 675
725
775
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
100
10
V
GE
= 15 V, T = 125°C
C
1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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6
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.65
q
JC
20%
10%
R
C
R
C
R
R (°C/W) t (sec)
Junction
Case
1
1
2
2
n
i
i
5%
0.02659
0.06231
0.10246
0.2121
0.1057
1.0E−4
1.76E−4
0.002
0.1
C = t /R
2%
1%
i
i
i
0.01
0.001
2.0
C
n
Duty Factor = t /t
1
2
Single Pulse
Peak T = P
x Z
+ T
JC C
q
J
DM
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
10
1
R
= 1.5
q
JC
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
Junction
Case
1
1
2
2
n
R (°C/W) t (sec)
i
i
0.19655 1.48E−4
0.1
0.414
0.5
0.345
0.0934
0.002
0.03
0.1
C = t /R
i
2%
i
i
C
2.0
1%
n
0.01
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
q
J
DM
JC
C
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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7
NGTB25N120FLWG
Figure 21. Definition of Turn On Waveform
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8
NGTB25N120FLWG
Figure 22. Definition of Turn Off Waveform
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9
NGTB25N120FLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
NOTES:
−T−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
MILLIMETERS
INCHES
DIM MIN
MAX
21.08
16.26
MIN
MAX
8.30
U
L
A
B
C
D
E
F
20.32
15.75
4.70
1.00
1.90
1.65
0.800
0.620
N
0.640
0.209
0.055
0.102
0.084
4
5.30 0.185
1.40 0.040
2.60 0.075
2.13 0.065
A
K
−Q−
M
M
T B
0.63 (0.025)
1
2
3
G
H
J
5.45 BSC
0.215 BSC
1.50
0.40
19.81
5.40
4.32
---
2.49 0.059
0.80 0.016
0.098
0.031
0.820
0.244
0.216
0.177
0.144
P
K
L
20.83
0.780
−Y−
6.20 0.212
5.49 0.170
N
P
Q
U
W
4.50 ---
3.65 0.140
3.55
6.15 BSC
2.87 3.12
0.242 BSC
0.113 0.123
W
J
STYLE 4:
PIN 1. GATE
F 2 PL
H
G
D3 PL
2. COLLECTOR
3. EMITTER
4. COLLECTOR
M
S
Y Q
0.25 (0.010)
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NGTB25N120FLW/D
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