NGTB25N120SWG [ONSEMI]
IGBT，1200V/25A - 焊接;
| 型号： | NGTB25N120SWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V/25A - 焊接 双极性晶体管 |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB25N120SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
www.onsemi.com
Features
25 A, 1200 V
• T
= 175°C
Jmax
VCEsat = 2.0 V
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Eoff = 0.60 mJ
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
50
25
@ TC = 100°C
Pulsed collector current, T
ICM
IF
100
A
A
pulse
G
TO−247
CASE 340AL
limited by T
Jmax
C
E
Diode forward current
@ TC = 25°C
50
25
@ TC = 100°C
Diode pulsed current, T
limited
IFM
100
A
V
pulse
MARKING DIAGRAM
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
VGE
$20
30
pulse
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
385
192
25N120S
AYWWG
Short Circuit Withstand Time
T
10
ms
°C
SC
V
GE
= 15 V, V = 500 V, T ≤ 150°C
CE J
Operating junction temperature
range
T
−55 to +175
J
Storage temperature range
T
−55 to +175
260
°C
°C
stg
A
Y
= Assembly Location
= Year
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
WW
G
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB25N120SWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2017 − Rev. 2
NGTB25N120SW/D
NGTB25N120SWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
0.63
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 25 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 25 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.4
2
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
4420
151
81
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
178
39
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 25 A, V = 15 V
ge
gc
C
GE
83
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
87
74
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
179
136
1.95
0.60
2.55
84
T = 25°C
d(off)
J
V
= 600 V, I = 25 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
GE
on
off
E
ts
t
t
d(on)
t
r
94
Turn−off delay time
185
245
2.39
1.26
3.65
T = 150°C
d(off)
J
V
= 600 V, I = 25 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 25 A
V
t
−
−
2.10
2.30
2.60
−
V
GE
F
F
V
GE
= 0 V, I = 50 A, T = 175°C
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
154
1.3
15
−
−
−
ns
mc
A
J
rr
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NGTB25N120SWG
TYPICAL CHARACTERISTICS
100
100
90
80
70
60
50
40
30
20
T = 150°C
J
V
= 13 V
to 20 V
GE
90
80
70
60
50
40
30
T = 25°C
J
V
GE
= 13 V
to 20 V
11 V
10 V
11 V
10 V
9 V
9 V
8 V
20
8 V
7 V
7 V
10
0
10
0
0
1
2
3
4
5
6
7
8
0
1
2
3
, COLLECTOR−EMITTER VOLTAGE (V)
CE
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
10,000
40
35
30
25
20
15
10
C
ies
T = 25°C
J
1000
100
10
T = 150°C
J
C
oes
C
res
T = 25°C
J
5
0
1
0
10 20 30
40 50
60 70 80 90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 3. Typical Capacitance
Figure 4. Diode Forward Characteristics
5
4
3
2
16
14
12
10
8
E
on
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
Rg = 10 W
E
off
6
V
V
= 600 V
= 25 V
= 25 A
4
CE
1
0
GE
2
0
I
C
0
10
20
30
40
50
60
0
50
100
Q , GATE CHARGE (nC)
150
200
I , COLLECTOR CURRENT (A)
C
G
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
www.onsemi.com
3
NGTB25N120SWG
TYPICAL CHARACTERISTICS
1000
1000
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
Rg = 10 W
J
t
100
10
f
t
t
d(off)
dc operation
100
50 ms
d(on)
100 ms
Single Nonrepetitive
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
1 ms
t
r
0.1
10
1
10
100
1000
10k
0
10
20
30
40
50
60
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
1
50% Duty Cycle
R
= 0.39
q
JC
20%
10%
5%
0.1
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
i
i
0.0931
0.0034
0.0179
0.0278
0.0842
2%
0.01
0.0559
0.1139
0.1187
0.0079
0.0004
3.9912
n
0.001
238.3112
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 9. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
1
R
= 0.635
q
JC
50% Duty Cycle
20%
R (°C/W) C (J/°C)
i
i
R
C
R
C
R
n
Junction
Case
1
1
2
0.011310 0.000088
0.014776 0.000677
0.017184 0.001840
0.042148 0.002373
0.078172 0.004045
0.1
10%
5%
C
0.020998
0.086526
0.132366
0.180428
0.735746
2
n
0.047623
0.036547
0.075548
0.175265
0.135917
2%
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.000001 0.00001
0.01
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 10. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明