NGTB45N60S2WG [ONSEMI]
IGBT，600 V/45 A - 焊接;
| 型号： | NGTB45N60S2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600 V/45 A - 焊接 双极性晶体管 |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB45N60S2WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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Features
45 A, 600 V
• Low Switching Loss Reduces System Power Dissipation
V
CEsat = 2.0 V
• T
= 175°C
Jmax
Eoff = 0.36 mJ
• Soft, Fast Free Wheeling Diode
• This is a Pb−Free Device
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
E
Collector−emitter voltage
VCES
IC
600
V
A
Collector current
@ TC = 25°C
90
45
@ TC = 100°C
Pulsed collector current, T
ICM
IF
180
A
A
pulse
limited by T
Jmax
G
TO−247
CASE 340AL
Diode forward current
@ TC = 25°C
C
90
45
E
@ TC = 100°C
Diode pulsed current, T
limited
IFM
180
A
V
pulse
by T
Jmax
MARKING DIAGRAM
Gate−emitter voltage
Transient Gate Emitter Voltage
(t = 5 ms, D < 0.010)
p
VGE
$20
$30
Power Dissipation
@ TC = 25°C
PD
W
300
150
@ TC = 100°C
45N60S2
AYWWG
Operating junction temperature
range
T
J
−55 to +175
°C
Storage temperature range
T
−55 to +175
260
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB45N60S2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 1
NGTB45N60S2W/D
NGTB45N60S2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.50
1.46
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 45 A
V
CEsat
−
−
2.0
2.5
2.3
−
GE
C
V
GE
= 15 V, I = 45 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 150 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.2
2
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
3200
130
85
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
135
27
nC
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480 V, I = 45 A, V = 15 V
ge
gc
C
GE
Q
67
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
151
55
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 400 V, I = 45 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15 V
Turn−off switching loss
Turn−off delay time
E
off
0.36
154
78
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 400 V, I = 45 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15 V
Turn−off switching loss
E
off
0.69
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 45 A
V
F
−
−
1.2
1.2
1.4
−
GE
F
V
GE
= 0 V, I = 45 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
498
9400
36
−
−
−
ns
nc
A
rr
T = 25°C
J
I = 45 A, V = 200 V
Q
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB45N60S2WG
TYPICAL CHARACTERISTICS
160
140
120
100
80
160
T = 25°C
T = 150°C
J
J
13 V
140
120
100
80
V
= 15 V
to 20 V
13 V
GE
V
GE
= 15 V
to 20 V
11 V
11 V
10 V
10 V
9 V
60
60
40
40
9 V
8 V
7 V
20
20
8 V
7 V
0
0
0
1
2
3
4
5
6
7
8
0
0
4
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
10,000
1000
120
100
80
60
40
20
0
T = 25°C
J
C
ies
T = 25°C
J
T = 150°C
J
100
10
C
C
oes
res
0
20
40
60
80
100
0.5
1.0
1.5
2.0
V
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
CE
F
Figure 3. Typical Capacitance
Figure 4. Diode Forward Characteristics
20
18
16
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
Rg = 10 W
J
6
V
V
= 480 V
= 15 V
CE
4
E
off
GE
= 40 A
2
I
C
0
0
14
24
34
44
54
64
74
84
20
40
60
80
100 120
140 160
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
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3
NGTB45N60S2WG
TYPICAL CHARACTERISTICS
1000
100
1000
100
100 ms
1 ms
50 ms
t
d(off)
10
1
dc operation
t
f
Single Nonrepetitive
V
V
= 400 V
= 15 V
Pulse T = 25°C
CE
C
Curves must be derated
linearly with increase
in temperature
GE
0.1
T = 150°C
J
Rg = 10 W
10
0.01
1
10
100
1000
4
14
24
34
44
54
64
74
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
1
0.1
50% Duty Cycle
20%
R
= 0.50
q
JC
10%
5%
Duty Factor = t /t
2%
1
2
0.01
Peak T = P
x Z
+ T
JC
q
J
DM
C
R (°C/W)
i
t (sec)
i
0.064185 0.001558
0.060802 0.005201
R
C
R
R
n
Junction
C = t /R
Case
1
1
2
0.050673
0.170671
0.142159
0.009510
0.00004
0.019734
0.018529
0.070344
3.325233
26863.47
0.001
Single Pulse
i
i
i
C
C
n
2
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 9. IGBT Transient Thermal Impedance
10
1
R
= 1.46
q
JC
50% Duty Cycle
R (°C/W)
i
t (sec)
i
0.026867 0.000037
0.000237 0.013344
0.034915 0.000286
20%
10%
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
0.039625
0.087617
0.161215
0.336873
0.265205
0.361515
0.148056
0.000798
0.001141
0.001962
0.002968
0.011924
0.027661
0.213586
5%
2%
i
i
i
0.1
C
2
n
Single Pulse
Duty Factor = t /t
1
x Z
2
Peak T = P
+ T
JC C
q
J
DM
0.01
0.000001
0.00001
0.0001
0.01
0.01
0.1
1
PULSE TIME (sec)
Figure 10. Diode Transient Thermal Impedance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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