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NGTG20N60L2TF1G [ONSEMI]

IGBT，N 沟道，600V，20A，饱和压=1.45V，单 TO-3PF-3L;
NGTG20N60L2TF1G
型号： NGTG20N60L2TF1G
厂家： ONSEMI    ONSEMI
描述：

IGBT，N 沟道，600V，20A，饱和压=1.45V，单 TO-3PF-3L

双极性晶体管
文件： 总6页 (文件大小：472K)
中文：  中文翻译
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NGTG20N60L2TF1G  
N-Channel IGBT  
www.onsemi.cn  
600V, 20A, V (sat);1.45V 单体TO-3PF-3L  
CE  
主要特长  
IGBT V (sat)=1.45V typ. (I =20A, V =15V)  
适用全绝缘型封装  
最高结温 Tj=175C  
CE  
C
GE  
IGBT t =67ns typ.  
f
增强型 (Enhancement type)  
应用  
白物家电的功率因数校正  
通用变频器 (General purpose inverter)  
规格  
绝对最大额定值 / Ta = 25C (除非特殊指定)  
参数  
记号  
条件  
额定值  
600  
单位  
V
集电极-发射极电压(Collector to Emitter Voltage)  
栅极-发射极电压(Gate to Emitter Voltage)  
V
V
CES  
20  
40  
V
GES  
@ Tc=25C *2  
@ Tc=100C *2  
A
集电极电流 Collector Current (DC)  
I
I
*1  
Limited by Tjmax  
C
20  
A
集电极电流 Collector Current (脉冲)  
允许功耗(Allowable Power Dissipation)  
Pulse width Limited by Tjmax  
105  
A
CP  
Tc=25C (Our ideal heat dissipation condition)  
P
D
64  
W
*2  
结温(Junction Temperature)  
Tj  
175  
C  
C  
储存温度(Storage Temperature)  
Tstg  
- 55 to +175  
注 : *1 集电极电流由下式计算:  
Tjmax - Tc  
I (Tc)=  
C
R
(j-c)×  
V
CE  
(sat)(Tj, I (Tc))  
C
th  
*2 我司的条件为背面散热。  
方法为:器件的背面涂上硅脂, 然后将该器件贴在 铝制的水冷散热器上。  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
订单及封装情况  
器件名称  
出货包装  
封装  
注解  
TO-3PF-3L  
SC-94  
30  
不含铅  
NGTG20N60L2TF1G  
pcs. / tube  
印刷图  
电气连接  
2
GTG20N  
LOT No.  
60L2  
1
3
© Semiconductor Components Industries, LLC, 2015  
September 2015 - Rev. 0  
1
Publication Order Number :  
NGTG20N60L2TF1GCN/D  
NGTG20N60L2TF1G  
电气特性 / Ta = 25C (除非特殊指定)  
额定值  
参数  
记号  
条件  
单位  
min  
600  
typ  
max  
集电极-发射极击穿电压  
V(  
)
I
=500A, V =0V  
C GE  
V
BR CES  
(Collector to Emitter Breakdown Voltage)  
Tc=25C  
10  
A  
集电极-发射极截止电流  
I
I
V
=600V, V =0V  
GE  
CES  
CE  
(Collector to Emitter Cutoff Current)  
Tc=150C  
1
mA  
栅极-发射极漏电流  
V
V
=20V, V  
=0V  
100  
nA  
V
GES  
GE  
CE  
(Gate to Emitter Leakage Current)  
栅极-发射极阈值电压  
V
(th)  
GE  
=20V, I =250A  
4.5  
6.5  
CE  
C
(Gate to Emitter threshold voltage)  
Tc=25C  
1.45  
1.8  
1.65  
V
V
集电极-发射极饱和电压  
V
(
)
V =15V, I =20A  
GE C  
CE sat  
(Collector to Emitter Saturated Voltage)  
Tc=150C  
输入电容(Input Capacitance)  
输出电容(Output Capacitance)  
Cies  
2000  
60  
pF  
pF  
Coes  
V
=20V,f=1MHz  
CE  
反向传输电容  
Cres  
50  
pF  
(Reverse Transfer Capacitance)  
开启迟延时间(Turn-on delay time)  
t (on)  
d
60  
37  
ns  
ns  
ns  
ns  
ns  
ns  
nC  
nC  
V
CC  
=300V,I =20A  
C
=30,L=200H  
上升时间(Rise Time)  
t
r
R
G
开启时间(Turn-ON Time)  
ton  
t (off)  
400  
193  
67  
V
GE  
=0V/15V  
关断迟延时间(Turn-OFF Delay Time)  
下降时间(Fall Time)  
d
Vclamp=400V  
t
f
参照图 1, 图 2  
关断时间(Turn-OFF Time)  
总栅极电荷(Total Gate Charge)  
栅极-发射极电荷(Gate to Emitter charge)  
toff  
281  
84  
Qg  
Qge  
16  
V
CE  
=300V, V =15V, I =20A  
GE  
C
栅极-集电极米勒电荷  
Qgc  
37  
nC  
(Gate to Collector “Miller” Charge)  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  
indicated by the Electrical Characteristics if operated under different conditions.  
热特性 / Ta = 25C (除非特殊指定)  
参数  
记号  
条件  
额定值  
单位  
热阻  
Thermal Resistance (junction- Case)  
热阻 结到环境  
(结到外壳)  
Rth(j-c)  
Tc=25  
C (我司的理想散热条件)*2  
2.33  
47.5  
C /W  
C /W  
(
)
Rth(j-a)  
Thermal Resistance (junction- atmosphere)  
图 1 : 开关时间测试电路  
图 2 : 时间图  
Clamp Di  
V
GE  
90%  
10%  
0
200H  
DUT  
I
C
V
CC  
90%  
90%  
R
G
10%  
10%  
10%  
10%  
V
CE  
0
NGTG20N60L2TF1G  
t
t
r
f
t (off)  
d
t (on)  
d
t
t
on  
off  
IT16383  
www.onsemi.cn  
2
NGTG20N60L2TF1G  
www.onsemi.cn  
3
NGTG20N60L2TF1G  
www.onsemi.cn  
4
NGTG20N60L2TF1G  
www.onsemi.cn  
5
NGTG20N60L2TF1G  
封装尺寸  
单位: mm  
TO-3PF-3L  
CASE 340AH  
ISSUE A  
NOTES:  
SEATING  
PLANE  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
P
A
E
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE  
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO  
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA  
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.  
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.  
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.  
A1  
Q
H1  
MILLIMETERS  
DIM MIN  
MAX  
5.70  
3.20  
3.50  
2.20  
0.95  
2.15  
4.20  
1.10  
24.70  
25.30  
3.70  
15.70  
5.55  
10.20  
19.50  
5.20  
2.20  
3.80  
4.70  
A
A1  
A2  
A3  
b
b2  
b3  
c
5.30  
2.80  
3.10  
1.80  
0.65  
1.90  
3.80  
0.80  
24.30  
D
D2  
D
L2  
D3  
D2 24.70  
L1  
D3  
E
e
H1  
L
L1  
L2  
P
3.30  
15.30  
5.35  
9.80  
19.10  
4.80  
1.90  
3.40  
4.30  
NOTE 3  
L
Q
1
2
3
c
3X  
b
3X b2  
A3  
A2  
b3  
e
1 : Gate  
2 : Collector  
3 : Emitter  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States  
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,  
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including  
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can  
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are  
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or  
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all  
applicable copyright laws and is not for resale in any manner.  
www.onsemi.cn  
6

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