NGTG40N120FL2WG [ONSEMI]
IGBT 1200V 40A 太阳能/UPS;
| 型号： | NGTG40N120FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 1200V 40A 太阳能/UPS 双极性晶体管 |
| 文件： | 总11页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTG40N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
Features
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• Extremely Efficient Trench with Field Stop Technology
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
• T
= 175°C
Jmax
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
80
40
@ TC = 100°C
Pulsed collector current, T
ICM
200
A
V
pulse
limited by T
G
Jmax
TO−247
CASE 340AL
C
Gate−emitter voltage
VGE
$20
E
Transient gate−emitter voltage
30
(T
pulse
= 5 ms, D < 0.10)
Power Dissipation
PD
W
@ TC = 25°C
535
267
MARKING DIAGRAM
@ TC = 100°C
Short Circuit Withstand Time
T
10
ms
°C
SC
V
= 15 V, V = 500 V, T ≤ 150°C
GE
CE J
Operating junction temperature
range
T
−55 to +175
J
G40N120FL2
AYWWG
Storage temperature range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG40N120FL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2014 − Rev. 0
NGTG40N120FL2W/D
NGTG40N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.4
2
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
7385
230
140
313
61
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 40 A, V = 15 V
ge
gc
C
GE
151
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
116
42
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
286
121
3.4
1.1
4.5
111
43
T = 25°C
d(off)
J
V
= 600 V, I = 40 A
CC
C
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15V*
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
304
260
4.4
2.5
6.9
T = 175°C
d(off)
J
V
= 600 V, I = 40 A
C
CC
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15V*
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
on
off
E
ts
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB40N120FL2WG.
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2
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
160
140
120
100
80
160
T = 150°C
J
T = 25°C
J
V
= 20 V
to 13 V
140
120
100
80
GE
V
= 20 V
to 13 V
GE
11 V
10 V
11 V
10 V
60
60
40
9 V
8 V
7 V
40
9 V
8 V
7
20
20
7 V
0
0
0
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
120
100
80
160
140
120
100
80
T = −55°C
J
V
= 20 V
to 13 V
GE
11 V
10 V
60
60
40
40
T = 150°C
J
7 V
9 V
8 V
7
20
20
T = 25°C
J
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
3.00
100000
10000
1000
100
I
= 75 A
T = 25°C
J
C
C
ies
I
C
= 40 A
2.50
2.00
1.50
1.00
0.50
0.00
I
C
= 20 A
C
oes
C
res
10
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10 20
30 40 50
60 70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
16
14
12
10
8
V
CE
= 600 V
6
4
V
V
= 600 V
= 15 V
GE
CE
2
0
I
C
= 40 A
0
50
100
150
200
250
300
350
Q , GATE CHARGE (nC)
G
Figure 7. Typical Gate Charge
5
4.5
4
1000
E
on
t
t
d(off)
3.5
3
t
f
2.5
2
100
d(on)
E
off
t
r
1.5
1
V
V
= 600 V
= 15 V
CE
V
V
= 600 V
= 15 V
= 40 A
CE
GE
GE
I
C
= 40 A
I
C
0.5
0
Rg = 10 W
120 140
T , JUNCTION TEMPERATURE (°C)
Rg = 10 W
120 140 160
T , JUNCTION TEMPERATURE (°C)
10
1000
100
10
0
20
40
60
80
100
160
0
20
40
60
80
100
J
J
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
12
10
8
V
V
= 600 V
= 15 V
T = 150°C
CE
GE
t
J
d(off)
Rg = 10 W
E
on
t
f
t
d(on)
6
E
off
4
t
r
V
V
= 600 V
= 15 V
CE
GE
2
T = 150°C
J
Rg = 10 W
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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4
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
14
12
10
8
10000
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
T = 150°C
T = 150°C
J
J
t
I
C
= 40 A
I = 40 A
C
d(off)
E
on
1000
100
10
t
d(on)
t
f
6
4
t
r
E
off
2
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 12. Switching Loss vs. Rg
Figure 13. Switching Time vs. Rg
1000
7
6
5
4
3
2
1
0
t
d(off)
E
on
t
f
t
d(on)
100
10
E
off
t
r
V
= 15 V
V
GE
= 15 V
GE
T = 150°C
T = 150°C
J
J
I
C
= 40 A
I = 40 A
C
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
CE
350 400 450 500 550
350 400 450 500 550
V
CE
V
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
dc operation
100 ms
1 ms
1
Single Nonrepetitive
10
1
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
C
GE
0.01
1
10
100
1000
10000
1
10
100
1000
10000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 17. Reverse Bias Safe Operating Area
Figure 16. Safe Operating Area
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5
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
250
200
150
100
50
V
CE
= 600 V, R = 10 W, V = 0/15 V
G GE
T
C
= 80°C
T
C
= 80°C
T
C
= 110°C
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 18. Collector Current vs. Switching
Frequency
1
0.1
R
= 0.28
q
JA
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
Junction
Case
1
1
2
2
n
n
R (°C/W) C (J/°C)
i
i
0.048747 0.006487
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
0.025253 1.252250
0.01
2%
C
0.001
0.0001
Duty Factor = t /t
1
2
Single Pulse
1E−05
Peak T = P
x Z
+ T
JC C
q
J
DM
1E−06
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 19. IGBT Transient Thermal Impedance
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6
NGTG40N120FL2WG
Figure 20. Test Circuit for Switching Characteristics
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7
NGTG40N120FL2WG
Figure 21. Definition of Turn On Waveform
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8
NGTG40N120FL2WG
Figure 22. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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