NGTP25N90LFT4G

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描述:Reading ON Semiconductor IGBT Datasheets

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Reading ON Semiconductor IGBT Datasheets

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AND9068/D  
Reading ON Semiconductor  
IGBT Datasheets  
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APPLICATION NOTE  
Abstract  
Table 1. ABSOLUTE MAXIMUM RATINGS  
The Insulated Gate Bipolar Transistor is a power switch  
well suited for high power applications such as motor  
control, UPS and solar inverters, and induction heating. If  
the application requirements are well understood, the  
correct IGBT can easily be selected from the electrical  
properties provided in the manufacturers’ datasheet. This  
application note describes the electrical parameters  
provided in the ON Semiconductor IGBT datasheet.  
Rating  
Symbol  
Value  
Unit  
V
Collectoremitter voltage  
V
CES  
600  
Collector current  
@ TC = 25°C  
@ TC = 100°C  
IC  
A
30  
15  
Pulsed collector current,  
I
60  
A
A
CM  
T
pulse  
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
@ TC = 100°C  
I
F
30  
15  
Part Number  
The part numbering convention for ON Semiconductor  
IGBTs is shown in Figure 1. Many of the device ratings and  
details are described in the part number and can be  
understood using this code.  
Diode pulsed current, T  
I
60  
A
pulse  
FM  
limited by T  
Jmax  
Gateemitter voltage  
V
GE  
$20  
V
Power dissipation  
@ TC = 25°C  
@ TC = 100°C  
P
D
W
130  
55  
Short circuit withstand time  
= 15 V, V = 400 V, T  
J
t
10  
ms  
SC  
V
GE  
CE  
v +150°C  
Operating junction temperat-  
ure range  
T
55 to  
°C  
°C  
°C  
J
+150  
Storage temperature range  
T
stg  
55 to  
+150  
Lead temperature for solder-  
ing, 1/8” from case for  
5 seconds  
T
SLD  
260  
Stresses exceeding Maximum Ratings may damage the device.  
Maximum Ratings are stress ratings only. Functional operation  
above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Oper-  
ating Conditions may affect device reliability.  
Figure 1. ON Semiconductor IGBT Part Numbering  
Key  
Absolute Maximum Ratings  
The absolute maximum ratings shown in Table 1 are  
typical for an IGBT. This table sets the limits, both electrical  
Brief  
This section provides a description of the device and lists  
its key features and typical applications.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 Rev. 0  
AND9068/D  
 
AND9068/D  
TJ * TC  
and thermal, beyond which the functionality is no longer  
IF +  
guaranteed and at which physical damage may occur. The  
absolute maximum rating does not guarantee that the device  
will meet the data sheet specifications when it is within that  
range. The specific voltage, temperature, current and other  
limitations are called out in the Electrical Characteristics  
table.  
R
th(jc)(diode) @ VF  
The equation relating I and V to the temperature rise is  
F
F
the same, although the R  
for the diode is specified  
th(jc)  
separately.  
Diode Pulsed Current, IFM  
The pulsed diode current describes the peak diode current  
pulse above the rated collector current specification that can  
flow while the junction remains below its maximum  
temperature. The maximum allowable pulsed current in turn  
depends on the pulse width, duty cycle and thermal  
conditions of the device.  
CollectorEmitter Voltage, VCES  
The maximum rated voltage to be applied between the  
collector and emitter terminals of the device is specified to  
prevent the device from entering avalanche breakdown and  
dissipating excessive energy in the device. The avalanche  
breakdown voltage varies with temperature and is at its  
minimum at low temperature. The breakdown voltage of the  
device is designed to meet the minimum voltage rating at  
40°C.  
GateEmitter Voltage, VGE  
The gateemitter voltage, V  
describes maximum  
GE  
voltage to be applied from gate to emitter under fault  
conditions. The gateemitter voltage is limited by the gate  
oxide material properties and thickness. The oxide is  
typically capable of withstanding greater than 80V before  
the oxide ruptures, but to ensure reliability over the lifetime  
of the device, and to allow for transient overvoltage  
conditions in the application, this voltage is limited to well  
below the gate rupture voltage.  
Collector Current, IC  
The maximum collector current is defined as the amount  
of current that is allowed to flow continuously into the  
collector for a given case temperature, T , in order to reach  
the maximum allowable junction temperature, T (150°C).  
C
J
The collector current can be stated in the following equation  
form:  
TJ * TC  
Power Dissipation, PD  
The maximum power dissipation is determined using the  
following equation:  
IC  
+
R
th(jc)(IGBT) @ VCE(sat)  
where R  
CE(sat)  
is the thermal resistance of the package and  
is the onstate voltage at the specified current, I .  
Since it is the current being sought after, and V  
th(jc)  
TJ * TC  
+
V
C
is a  
PD  
Rth(jc)  
CE(sat)  
function of current, the equation must be solved iteratively.  
An estimate of the V for a given collector current and  
temperature can found in the typical datasheet curves,  
discussed later.  
It is very important to understand that the absolute  
maximum collector current is defined based on very specific  
electrical and thermal conditions. The capability of the  
IGBT to conduct current without exceeding the absolute  
maximum junction temperature is highly dependent on the  
thermal performance of the system, including heatsinks and  
airflow.  
where R  
is the thermal resistance of the package. The  
th(jc)  
CE(sat)  
maximum power dissipation is given at case temperatures of  
25°C and 100°C, where the maximum junction temperature  
is 150°C.  
Short Circuit Withstand Time, tsc  
The short circuit withstand time describes the ability of  
the device to carry high current and sustain high voltage at  
the same time. The device must withstand at least the rated  
short circuit withstand time with specified voltages applied  
from collector to emitter and from gate to emitter. The  
collectoremitter voltage specified for the test will vary  
based on the minimum blocking voltage capability of the  
device. The gateemitter voltage is usually 15 V. The current  
flowing through the device under these conditions can far  
exceed the rated current, and is limited by the IGBT forward  
transconductance, an electrical parameter described below.  
The failure mode during this fault condition is usually  
thermal in nature.  
Pulsed Collector Current, ICM  
The pulsed collector current describes the peak collector  
current pulse above the rated collector current specification  
that can flow while remaining below the maximum junction  
temperature. The maximum allowable pulsed current in turn  
depends on the pulse width, duty cycle and thermal  
conditions of the device.  
Diode Forward Current, IF  
The diode forward current is the maximum continuous  
current that can flow at a fixed case temperature, T , while  
remaining under the maximum junction temperature, T .  
Operating Junction Temperature Range, TJ  
This is the junction temperature range in which the device  
is guaranteed to operate without physical or electrical  
damage or reduced life expectancy.  
C
J
This is determined in similar fashion to the V  
, above.  
CE(sat)  
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AND9068/D  
Storage Temperature Range, Tstg  
die attach regions of the device. The maximum lead  
temperature is also dependent on the duration for which the  
soldering iron is applied to the lead. The maximum time for  
application of the heat is specified in the conditions of this  
rating.  
This is the temperature range in which the device may be  
stored, without electrical bias, without reducing the life  
expectancy of the device.  
Lead Temperature for Soldering, TSLD  
The maximum allowable soldering temperature is limited  
by the thermal conduction from the leads to the junction and  
THERMAL CHARACTERISTICS  
Table 2. TABLE OF IGBT AND DIODE THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
1.1  
Unit  
°C/W  
°C/W  
°C/W  
Thermal resistance junction to case, for IGBT  
Thermal resistance junction to case, for Diode  
Thermal resistance junction to ambient  
R
th(j-c)  
R
2.4  
th(j-c)  
R
60  
th(j-a)  
Thermal Resistance JunctiontoCase, Rth(jc)  
resistance is derated for a square power pulse for reference  
in designing pulse width modulated applications and is  
described in the graph of thermal resistance for varying  
pulse width and duty ratio, shown in Figure 2, below.  
The value for the thermal resistance given in Table 2  
represents the steadystate thermal resistance under dc  
power conditions, applied to the IGBT. The thermal  
10  
1
DUTY CYCLE = 0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
0.01  
0.01  
SINGLE PULSE  
Duty Factor = t /t  
1
2
Peak T = P  
x Z  
+ T  
JC C  
q
J
DM  
0.001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (s)  
Figure 2. IGBT Transient Thermal Response Curve for Varying Duty Ratio  
For a copackaged device such as the NGTB15N60EG the  
thermal resistance from the junction to case is specified  
separately for the IGBT and the diode.  
Electrical Characteristics  
Static Characteristics  
The static, or dc, electrical characteristics are shown in  
Table 3.  
Thermal Resistance JunctiontoAmbient, Rth(ja)  
This is the entire thermal resistance from the silicon  
junctiontoambient.  
Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS  
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
STATIC CHARACTERISTIC  
Collectoremitter breakdown voltage,  
gateemitter shortcircuited  
V
= 0 V, I = 500 mA  
V
(BR)CES  
600  
V
V
V
GE  
C
Collectoremitter saturation voltage  
V
= 15 V , I = 15 A  
V
V
1.7  
2.1  
1.95  
2.4  
GE  
C
CEsat  
V
GE  
= 15 V , I = 15 A, T = 150°C  
C J  
Gateemitter threshold voltage  
V
GE  
= V , I = 250 mA  
4.5  
6.5  
CE  
C
GE(th)  
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AND9068/D  
Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS  
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
STATIC CHARACTERISTIC  
Collectoremitter cutoff current, gateemitter  
shortcircuited  
V
= 0 V, V = 600 V  
I
10  
mA  
nA  
S
GE  
CE  
CES  
V
GE  
= 0 V, V = 600 V, T = 150°C  
200  
CE  
J
Gate leakage current, collectoremitter  
shortcircuited  
V
= 20 V, V = 0 V  
I
100  
GE  
CE  
GES  
Forward Transconductance  
V
= 20 V, I = 15 A  
g
fs  
10.1  
CE  
C
CollectorEmitter Breakdown Voltage, V(BR)CES  
V . This chart shows the I dependence on V for  
CE(sat) C CE  
This is the minimum offstate forward blocking voltage  
guaranteed over the operating temperature range. It is  
specified with the gate terminal tied to the emitter with a  
specified collector current large enough to place the device  
into avalanche.  
various gateemitter voltages. The datasheet contains  
output characteristics for T = 40, 25, and 150°C.  
A
60  
T = 40°C  
A
50  
40  
30  
20  
10  
0
CollectorEmitter Saturation Voltage, VCE(sat)  
13 V  
V
= 17 V  
GE  
V
CE(sat)  
is an important figure of merit, since it is directly  
related to the conduction losses of the device. This is the  
voltage drop from collector to emitter for a specified gate  
voltage and collector current. Both a typical value and a  
maximum value are specified in the electrical table for both  
25°C and 150°C.  
15 V  
11 V  
In addition to the electrical limits in the table, the  
datasheet includes a graph describing the dependence of  
9 V  
7 V  
V
CE(sat)  
on temperature, as shown in Figure 3. The graph  
0
1
2
3
4
5
6
7
8
9
describes the typical part and does not guarantee  
performance, but it can be used as a starting point to  
V
, COLLECTORTOEMITTER VOLTAGE (V)  
CE  
Figure 4. Graph of the Output Characteristics of the  
determine the V  
for a given temperature. The curves  
CE(sat)  
IGBT at 255C  
are given for V = 15 V and various collector currents.  
GE  
The characteristic curves and typical relationships should  
never be substituted for worst case design values. Good  
design practices and boardlevel design evaluation are  
critical for a reliable system.  
3.5  
3
I
= 30 A  
C
GateEmitter Threshold Voltage, VGE(th)  
2.5  
2
This parameter describes the gate to emitter voltage  
required for a specified amount of collector current to flow.  
This defines the gate to emitter voltage at which the device  
enters the onstate. Typically this test is based on a collector  
current flow proportional to the die size.  
I
C
= 15 A  
1.5  
1
I
C
= 5 A  
I
C
= 10 A  
CollectorEmitter CutoffCurrent, ICES  
This specifies the leakage current one can expect in the  
offstate forward blocking mode. It is specified at the  
0.5  
0
60 40 20  
0
20 40 60 80 100 120 140160  
maximum rated blocking voltage,  
V
CES  
with the  
T , JUNCTION TEMPERATURE (°C)  
J
gatetoemittervoltage equal to zero volts. The maximum  
allowable value of leakage current occurs at the maximum  
junction temperature.  
Figure 3. Graph of the Temperature Dependence of  
VCE(sat)  
The V  
values in the electrical parameter table are  
Gate Leakage Current, IGES  
CE(sat)  
only given for V = 15 V. If the gate of the IGBT is being  
driven by a different voltage, the output characteristics  
shown in Figure 4 can also be useful in approximating the  
The absolute maximum value of gate leakage current is  
typically specified at a gate voltage of 20 V while the  
collector and emitter are grounded.  
GE  
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AND9068/D  
Forward Transconductance, gfs  
This is the amount of change in collector current for an  
incremental change in the gate to emitter voltage, measured  
in Siemens (or Mhos). It is specified at the room temperature  
rated current of the device, and typically with the device in  
full saturation, where a further increase in collectoremitter  
voltage no longer leads to an additional increase in collector  
current. A typical collectoremitter voltage used for this test  
is 20 V. Figure 5 illustrates the g measurement.  
fs  
Figure 5. Illustration of the Measurement of IGBT gfs  
Dynamic Characteristics  
Table 4. IGBT Dynamic Electrical Characteristics  
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
pF  
DYNAMIC CHARACTERISTIC  
Input capacitance  
C
2600  
64  
ies  
Output capacitance  
C
V
CE  
= 20 V, V = 0 V, f = 1 MHz  
oes  
GE  
Reverse transfer capacitance  
Gate charge total  
C
42  
res  
Q
80  
g
Gate to emitter charge  
Gate to collector charge  
Q
24  
V
CE  
= 480 V, I = 15 A, V = 15 V  
nC  
ge  
C
GE  
Q
33  
gc  
10000  
The dynamic electrical characteristics which include  
device capacitances and gate charge are given in the  
electrical table, as shown in Table 4.  
V
= 0 V,  
GE  
f = 1 MHz  
C
ies  
IGBT capacitances are similar to those described for  
power MOSFETs. The datasheet describes the measurable  
1000  
100  
terminal capacitances, C , C , and C . They are  
ies  
oes  
res  
specified in the electrical table at a fixed collector bias  
voltage; however, the capacitances are voltage dependant,  
as can be seen in Figure 6. The capacitances specified on the  
datasheet are convenient and easily measured. They relate to  
the pin to pin capacitances shown in Figure 7 and described  
below.  
C
oes  
C
res  
10  
0
10 20  
30  
40 50 60  
70 80 90 100  
V
CE  
, COLLECTORTOEMITTER VOLTAGE (V)  
Figure 6. IGBT Capacitance versus CollectorEmitter  
Voltage Showing Voltage Dependance of Coes and  
Cres  
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AND9068/D  
Q is the total charge required on the gate to raise V to  
g
GE  
a specified gate voltage. ON Semiconductor devices are  
specified at V _=_15_V.  
GE  
Figure 7. Pintopin Capacitances of the IGBT  
Cies + Cge ) Cgc with Cce shorted  
C
C
oes + Cgc ) Cce  
res + Cgc  
Input Capacitance, Cies  
Figure 8. Theoretical Gate Charge Curve showing  
The input capacitance is made up of the parallel  
combination of gateemitter and gatecollector  
capacitances, when the collector and emitter are tied  
together. The gateemitter capacitance is constant, as it  
consists mainly of the metaloxidesemiconductor  
V
GP, QG, QGE, and QGC  
Gate to Emitter Charge, Qge  
is the amount of charge required to reach the plateau  
voltage V . This charge contributes to turning on the MOS  
channel, at which time the collectoremitter voltage begins  
to transition from high to low voltage. The level of V is  
dependent on the load current being switched and can be  
approximated by determining the V that corresponds to  
Q
ge  
capacitance. The gatecollector capacitance is  
a
GP  
combination of a fixed oxide capacitor and a pn junction  
capacitor. This results in a voltage dependence that is  
slightly more complex than that of a pn junction.  
GP  
GS  
Output Capacitance, Coes  
the switching current level from the transconductance  
curves in Figure 5.  
The output capacitance is formed by the parallel  
combination of the gatecollector and collectoremitter  
capacitances. As mentioned above, the gatecollector  
capacitance is voltage dependant. This is also true for the  
collectoremitter capacitance. The voltage dependence of  
the collectoremitter junction is that of a pn junction.  
Gate to Collector Charge, Qgc  
Q
gc  
is the amount of charge required to charge the junction  
capacitor while the voltage from collector to emitter is  
decreasing in the transition between the offstate and  
onstate. This plateau corresponds to the charging of what  
is also known as the Miller capacitance.  
Transfer Capacitance, Cres  
The transfer capacitance is composed only of the  
gatecollector capacitance. Its role in the device operation  
is critical, as it provides negative feedback between the  
collector and the gate. This capacitance is responsible for the  
plateau on the gate charge curve. The change in  
Switching Characteristics  
The IGBT switching characteristics are of great  
importance because they relate directly to the switching  
energy losses of the device. Switching losses can be  
substantial, especially at higher frequencies and increasing  
temperature, where the switching losses increase.  
When voltage is applied to the gate, the input capacitance  
collectoremitter voltage forces a current through C  
res  
which reduces the gate drive current while the collector  
voltage is changing.  
must first be charged to the threshold voltage, V  
. This  
GE(th)  
Gate Charge, Total, Qg  
leads to a delay (t ) before the IGBT collector current  
d(on)  
Input capacitance is useful, but in terms of gate drive  
design, the more important figure of merit is the gate charge.  
It is used to size the gate drive components and predict  
switching losses in the driver. To measure gate charge the  
IGBT gate is driven with a current and the gate voltage  
change is monitored versus time. The resulting gate voltage  
versus gate charge curve is shown in Figure 8 for a constant  
current gate drive signal.  
begins to flow. Once the collector current begins to flow, the  
depletion layer that blocks the voltage during the offstate  
begins to collapse. The voltage drops to the onstate voltage  
drop, V . This is illustrated in Figure 9.  
CE(sat)  
During turnoff, the gate voltage is reduced to zero and  
the opposite occurs. The channel for the MOSFET current  
is closed and the current begins to drop abruptly. The voltage  
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begins to rise from V  
as the charge due to current flow  
The switching characteristics are given in the electrical  
CE(sat)  
is removed. The voltage across the device reaches the supply  
voltage, and minority carriers that remain in the device after  
turnoff cause a tail current that continues to flow. This is  
illustrated in Figure 10.  
parametric table for T = 25 and 150°C. These are shown in  
J
Table 5.  
Table 5. INDUCTIVE SWITCHING ELECTRICAL CHARACTERISTICS OF THE IGBT  
Parameter  
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD  
Turnon delay time  
Rise time  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
ns  
t
78  
30  
d(on)  
t
r
Turnoff delay time  
Fall time  
t
130  
d(off)  
T = 25°C  
J
V
= 400 V, I = 15 A  
C
CC  
t
f
120  
R = 22 W  
g
V
= 0 V / 15 V  
Turnon switching loss  
Turnoff switching loss  
Total switching loss  
Turnon delay time  
Rise time  
E
on  
0.900  
0.300  
1.200  
76  
GE  
E
off  
mJ  
ns  
E
ts  
t
t
d(on)  
t
r
33  
Turnoff delay time  
Fall time  
133  
d(off)  
T = 150°C  
J
V
= 400 V, I = 15 A  
CC  
C
t
f
223  
R = 22 W  
g
V
= 0 V / 15 V  
Turnon switching loss  
Turnoff switching loss  
Total switching loss  
E
on  
1.10  
0.510  
1.610  
GE  
E
off  
mJ  
E
ts  
voltage and collector current reach 10% of their final  
specified value.  
Rise Time, tr  
The interval between the time the collector reaches 10%  
of its specified current value and the time it reaches 90% of  
its final value is defined as the rise time.  
Turnon Switching Loss, Eon  
The turnon switching losses are calculated by integrating  
the power dissipation (I x V ) over the time interval  
C
CE  
starting when the collector current reaches 10% of its final  
value and ending when the collectoremitter voltage reaches  
5% of its peak value.  
Turnoff Delay Time, td(off)  
t
is the time delay between the falling edge of the gate  
d(off)  
pulse and the falling edge of the collector current. The  
measurement is the time between the point at which the gate  
voltage falls to 90% of its maximum value and the collector  
current reaches 10% of its final specified value.  
Figure 9. Turnon Switching Illustration Showing the  
Definitions of the Turnon Switching Characteristics  
Fall Time, tf  
The fall time is defined as the time required for the  
collector current to drop from 90% to 10% of its initial value.  
Turnon Delay Time, td(on)  
Turnoff Switching Loss, Eoff  
t
is the time delay between the rising edge of the gate  
d(on)  
The turnoff switching energy losses are calculated to  
include the overlap of the rising collectoremitter voltage  
pulse and the rising edge of the IGBT collector current. The  
measurement considers the point at which both the gate  
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AND9068/D  
Total Switching Loss, Ets  
The total switching losses comprise the sum of the  
turnon and turnoff switching losses.  
Typical switching time and switching energy loss graphs  
are given that describe the dependence of the switching  
characteristics on a variety of system variables. The  
dependence on junction temperature, collector current,  
collectoremitter voltage, and gate resistance are all  
provided to aid in the design process.  
and the falling collector current. Because the IGBT is a  
minority carrier device, the collector current continues to  
flow after the time where the collector voltage has fully  
risen. This residual current, called tail current, eventually  
decays to zero. It is customary to add a fixed length of time  
to the end of the turnoff time to capture the energy lost  
during the entire tail current. This added time is denoted as  
xms in Figure 10.  
Diode Characteristics  
Figure 11. Copackaged IGBT and Freewheeling  
Diode  
IGBTs are frequently used in applications where the load  
is inductive, such as motor control. These applications are  
hard switching and require that the IGBT be in parallel with  
a
freewheeling diode. ON Semiconductor offers  
copackaged IGBT and diode devices. The diode cathode and  
IGBT collector are connected together and the diode anode  
and IGBT emitter are also connected, as shown in Figure 11.  
The freewheeling diode takes the place of the body diode  
that otherwise exists in a power MOSFET. For IGBTs that  
are copackaged with a freewheeling rectifier diode, the  
datasheet will also include electrical specifications for the  
diode, as shown in Table 6.  
Figure 10. Turnoff Switching Illustration Showing  
the Definitions of the Turnoff Switching  
Characteristics  
Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE  
Parameter  
DIODE CHARACTERISTIC  
Forward voltage  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
V
= 0 V, I = 15 A  
F J  
V
t
1.6  
1.6  
1.85  
V
GE  
F
F
V
GE  
= 0 V, I = 15 A, T = 150°C  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
270  
350  
5
ns  
nc  
A
rr  
T = 25°C  
J
I = 15 A, V = 200 V  
Q
rr  
F
R
di /dt = 200 A/ms  
F
I
rrm  
t
rr  
350  
1000  
7.5  
ns  
nc  
A
T = 125°C  
J
Q
I = 15 A, V = 200 V  
rr  
F
R
di /dt = 200 A/ms  
F
I
rrm  
Forward Voltage, VF  
emitter terminal and the emittercollector (anodecathode)  
voltage is measured.  
Forward voltage is an important parameter in hard  
The forward voltage of the rectifier is measured while the  
IGBT gate and emitter terminals are tied together, ensuring  
the IGBT is in its offstate. A forcing current enters the  
switching applications. V is specified in the electrical table  
F
http://onsemi.com  
8
 
AND9068/D  
for a given current and is specified at T = 25 and 150°C. The  
J
datasheet also includes a graph showing the I V  
F
F
relationship for a typical part at T = 40, 25, and 150°C, as  
J
shown in Figure 12.  
35  
40°C  
30  
25  
20  
25°C  
15  
150°C  
10  
5
0
0
0.5  
1
1.5  
2
2.5  
V , FORWARD VOLTAGE (V)  
F
Figure 13. Diode Reverse Recovery Illustration  
Showing the Definitions of the Reverse Recovery  
Characteristics  
Figure 12. Diode Forward Characteristic Curves for  
TJ_=_40, 25, and 1505C  
Reverse Recovery Time, trr  
The reverse recovery time, t , defines the time the diode  
takes to enter the reverse blocking state after conducting in  
the forward direction. It is defined as the length of time  
required for the reverse current to return to 10% of its peak  
Reverse Recovery Charge, Qrr  
The amount of charge that is recovered from the diode  
during turnoff is referred to as reverse recovery charge, Q .  
It is calculated by taking the integral of the reverse recovery  
rr  
rr  
current over the time period, t .  
rr  
reverse value (I ). It is measured from the point in time  
rrm  
where the diode current crosses zero. The time period is  
labeled in Figure 13.  
Reverse Recovery Current, Irrm  
I
is the peak current reached during diode turn off. I  
rrm  
rrm  
depends on the initial forward diode current and the rate of  
change of the diode current, dI/dt, used to turn the diode off.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
AND9068/D  
 

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