NGTP25N90LFT4G 概述
Reading ON Semiconductor IGBT Datasheets
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AND9068/D
Reading ON Semiconductor
IGBT Datasheets
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APPLICATION NOTE
Abstract
Table 1. ABSOLUTE MAXIMUM RATINGS
The Insulated Gate Bipolar Transistor is a power switch
well suited for high power applications such as motor
control, UPS and solar inverters, and induction heating. If
the application requirements are well understood, the
correct IGBT can easily be selected from the electrical
properties provided in the manufacturers’ datasheet. This
application note describes the electrical parameters
provided in the ON Semiconductor IGBT datasheet.
Rating
Symbol
Value
Unit
V
Collector−emitter voltage
V
CES
600
Collector current
@ TC = 25°C
@ TC = 100°C
IC
A
30
15
Pulsed collector current,
I
60
A
A
CM
T
pulse
limited by T
Jmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
I
F
30
15
Part Number
The part numbering convention for ON Semiconductor
IGBTs is shown in Figure 1. Many of the device ratings and
details are described in the part number and can be
understood using this code.
Diode pulsed current, T
I
60
A
pulse
FM
limited by T
Jmax
Gate−emitter voltage
V
GE
$20
V
Power dissipation
@ TC = 25°C
@ TC = 100°C
P
D
W
130
55
Short circuit withstand time
= 15 V, V = 400 V, T
J
t
10
ms
SC
V
GE
CE
v +150°C
Operating junction temperat-
ure range
T
−55 to
°C
°C
°C
J
+150
Storage temperature range
T
stg
−55 to
+150
Lead temperature for solder-
ing, 1/8” from case for
5 seconds
T
SLD
260
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only. Functional operation
above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Oper-
ating Conditions may affect device reliability.
Figure 1. ON Semiconductor IGBT Part Numbering
Key
Absolute Maximum Ratings
The absolute maximum ratings shown in Table 1 are
typical for an IGBT. This table sets the limits, both electrical
Brief
This section provides a description of the device and lists
its key features and typical applications.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 0
AND9068/D
AND9068/D
TJ * TC
and thermal, beyond which the functionality is no longer
IF +
guaranteed and at which physical damage may occur. The
absolute maximum rating does not guarantee that the device
will meet the data sheet specifications when it is within that
range. The specific voltage, temperature, current and other
limitations are called out in the Electrical Characteristics
table.
R
th(j−c)(diode) @ VF
The equation relating I and V to the temperature rise is
F
F
the same, although the R
for the diode is specified
th(j−c)
separately.
Diode Pulsed Current, IFM
The pulsed diode current describes the peak diode current
pulse above the rated collector current specification that can
flow while the junction remains below its maximum
temperature. The maximum allowable pulsed current in turn
depends on the pulse width, duty cycle and thermal
conditions of the device.
Collector−Emitter Voltage, VCES
The maximum rated voltage to be applied between the
collector and emitter terminals of the device is specified to
prevent the device from entering avalanche breakdown and
dissipating excessive energy in the device. The avalanche
breakdown voltage varies with temperature and is at its
minimum at low temperature. The breakdown voltage of the
device is designed to meet the minimum voltage rating at
−40°C.
Gate−Emitter Voltage, VGE
The gate−emitter voltage, V
describes maximum
GE
voltage to be applied from gate to emitter under fault
conditions. The gate−emitter voltage is limited by the gate
oxide material properties and thickness. The oxide is
typically capable of withstanding greater than 80V before
the oxide ruptures, but to ensure reliability over the lifetime
of the device, and to allow for transient overvoltage
conditions in the application, this voltage is limited to well
below the gate rupture voltage.
Collector Current, IC
The maximum collector current is defined as the amount
of current that is allowed to flow continuously into the
collector for a given case temperature, T , in order to reach
the maximum allowable junction temperature, T (150°C).
C
J
The collector current can be stated in the following equation
form:
TJ * TC
Power Dissipation, PD
The maximum power dissipation is determined using the
following equation:
IC
+
R
th(j−c)(IGBT) @ VCE(sat)
where R
CE(sat)
is the thermal resistance of the package and
is the on−state voltage at the specified current, I .
Since it is the current being sought after, and V
th(j−c)
TJ * TC
+
V
C
is a
PD
Rth(j−c)
CE(sat)
function of current, the equation must be solved iteratively.
An estimate of the V for a given collector current and
temperature can found in the typical datasheet curves,
discussed later.
It is very important to understand that the absolute
maximum collector current is defined based on very specific
electrical and thermal conditions. The capability of the
IGBT to conduct current without exceeding the absolute
maximum junction temperature is highly dependent on the
thermal performance of the system, including heatsinks and
airflow.
where R
is the thermal resistance of the package. The
th(j−c)
CE(sat)
maximum power dissipation is given at case temperatures of
25°C and 100°C, where the maximum junction temperature
is 150°C.
Short Circuit Withstand Time, tsc
The short circuit withstand time describes the ability of
the device to carry high current and sustain high voltage at
the same time. The device must withstand at least the rated
short circuit withstand time with specified voltages applied
from collector to emitter and from gate to emitter. The
collector−emitter voltage specified for the test will vary
based on the minimum blocking voltage capability of the
device. The gate−emitter voltage is usually 15 V. The current
flowing through the device under these conditions can far
exceed the rated current, and is limited by the IGBT forward
transconductance, an electrical parameter described below.
The failure mode during this fault condition is usually
thermal in nature.
Pulsed Collector Current, ICM
The pulsed collector current describes the peak collector
current pulse above the rated collector current specification
that can flow while remaining below the maximum junction
temperature. The maximum allowable pulsed current in turn
depends on the pulse width, duty cycle and thermal
conditions of the device.
Diode Forward Current, IF
The diode forward current is the maximum continuous
current that can flow at a fixed case temperature, T , while
remaining under the maximum junction temperature, T .
Operating Junction Temperature Range, TJ
This is the junction temperature range in which the device
is guaranteed to operate without physical or electrical
damage or reduced life expectancy.
C
J
This is determined in similar fashion to the V
, above.
CE(sat)
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Storage Temperature Range, Tstg
die attach regions of the device. The maximum lead
temperature is also dependent on the duration for which the
soldering iron is applied to the lead. The maximum time for
application of the heat is specified in the conditions of this
rating.
This is the temperature range in which the device may be
stored, without electrical bias, without reducing the life
expectancy of the device.
Lead Temperature for Soldering, TSLD
The maximum allowable soldering temperature is limited
by the thermal conduction from the leads to the junction and
THERMAL CHARACTERISTICS
Table 2. TABLE OF IGBT AND DIODE THERMAL CHARACTERISTICS
Rating
Symbol
Value
1.1
Unit
°C/W
°C/W
°C/W
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
R
th(j-c)
R
2.4
th(j-c)
R
60
th(j-a)
Thermal Resistance Junction−to−Case, Rth(j−c)
resistance is derated for a square power pulse for reference
in designing pulse width modulated applications and is
described in the graph of thermal resistance for varying
pulse width and duty ratio, shown in Figure 2, below.
The value for the thermal resistance given in Table 2
represents the steady−state thermal resistance under dc
power conditions, applied to the IGBT. The thermal
10
1
DUTY CYCLE = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 2. IGBT Transient Thermal Response Curve for Varying Duty Ratio
For a copackaged device such as the NGTB15N60EG the
thermal resistance from the junction to case is specified
separately for the IGBT and the diode.
Electrical Characteristics
Static Characteristics
The static, or dc, electrical characteristics are shown in
Table 3.
Thermal Resistance Junction−to−Ambient, Rth(j−a)
This is the entire thermal resistance from the silicon
junction−to−ambient.
Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V , I = 15 A
V
V
−
−
1.7
2.1
1.95
2.4
GE
C
CEsat
V
GE
= 15 V , I = 15 A, T = 150°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
4.5
6.5
CE
C
GE(th)
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Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter cut−off current, gate−emitter
short−circuited
V
= 0 V, V = 600 V
I
−
−
10
−
mA
nA
S
GE
CE
CES
V
GE
= 0 V, V = 600 V, T = 150°C
−
200
CE
J
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
GE
CE
GES
Forward Transconductance
V
= 20 V, I = 15 A
g
fs
−
10.1
−
CE
C
Collector−Emitter Breakdown Voltage, V(BR)CES
V . This chart shows the I dependence on V for
CE(sat) C CE
This is the minimum off−state forward blocking voltage
guaranteed over the operating temperature range. It is
specified with the gate terminal tied to the emitter with a
specified collector current large enough to place the device
into avalanche.
various gate−emitter voltages. The datasheet contains
output characteristics for T = −40, 25, and 150°C.
A
60
T = −40°C
A
50
40
30
20
10
0
Collector−Emitter Saturation Voltage, VCE(sat)
13 V
V
= 17 V
GE
V
CE(sat)
is an important figure of merit, since it is directly
related to the conduction losses of the device. This is the
voltage drop from collector to emitter for a specified gate
voltage and collector current. Both a typical value and a
maximum value are specified in the electrical table for both
25°C and 150°C.
15 V
11 V
In addition to the electrical limits in the table, the
datasheet includes a graph describing the dependence of
9 V
7 V
V
CE(sat)
on temperature, as shown in Figure 3. The graph
0
1
2
3
4
5
6
7
8
9
describes the typical part and does not guarantee
performance, but it can be used as a starting point to
V
, COLLECTOR−TO−EMITTER VOLTAGE (V)
CE
Figure 4. Graph of the Output Characteristics of the
determine the V
for a given temperature. The curves
CE(sat)
IGBT at 255C
are given for V = 15 V and various collector currents.
GE
The characteristic curves and typical relationships should
never be substituted for worst case design values. Good
design practices and board−level design evaluation are
critical for a reliable system.
3.5
3
I
= 30 A
C
Gate−Emitter Threshold Voltage, VGE(th)
2.5
2
This parameter describes the gate to emitter voltage
required for a specified amount of collector current to flow.
This defines the gate to emitter voltage at which the device
enters the on−state. Typically this test is based on a collector
current flow proportional to the die size.
I
C
= 15 A
1.5
1
I
C
= 5 A
I
C
= 10 A
Collector−Emitter Cut−off−Current, ICES
This specifies the leakage current one can expect in the
off−state forward blocking mode. It is specified at the
0.5
0
−60 −40 −20
0
20 40 60 80 100 120 140160
maximum rated blocking voltage,
V
CES
with the
T , JUNCTION TEMPERATURE (°C)
J
gate−to−emittervoltage equal to zero volts. The maximum
allowable value of leakage current occurs at the maximum
junction temperature.
Figure 3. Graph of the Temperature Dependence of
VCE(sat)
The V
values in the electrical parameter table are
Gate Leakage Current, IGES
CE(sat)
only given for V = 15 V. If the gate of the IGBT is being
driven by a different voltage, the output characteristics
shown in Figure 4 can also be useful in approximating the
The absolute maximum value of gate leakage current is
typically specified at a gate voltage of 20 V while the
collector and emitter are grounded.
GE
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AND9068/D
Forward Transconductance, gfs
This is the amount of change in collector current for an
incremental change in the gate to emitter voltage, measured
in Siemens (or Mhos). It is specified at the room temperature
rated current of the device, and typically with the device in
full saturation, where a further increase in collector−emitter
voltage no longer leads to an additional increase in collector
current. A typical collector−emitter voltage used for this test
is 20 V. Figure 5 illustrates the g measurement.
fs
Figure 5. Illustration of the Measurement of IGBT gfs
Dynamic Characteristics
Table 4. IGBT Dynamic Electrical Characteristics
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
pF
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
2600
64
−
−
−
ies
Output capacitance
C
V
CE
= 20 V, V = 0 V, f = 1 MHz
oes
GE
Reverse transfer capacitance
Gate charge total
C
42
res
Q
80
g
Gate to emitter charge
Gate to collector charge
Q
24
V
CE
= 480 V, I = 15 A, V = 15 V
nC
ge
C
GE
Q
33
gc
10000
The dynamic electrical characteristics which include
device capacitances and gate charge are given in the
electrical table, as shown in Table 4.
V
= 0 V,
GE
f = 1 MHz
C
ies
IGBT capacitances are similar to those described for
power MOSFETs. The datasheet describes the measurable
1000
100
terminal capacitances, C , C , and C . They are
ies
oes
res
specified in the electrical table at a fixed collector bias
voltage; however, the capacitances are voltage dependant,
as can be seen in Figure 6. The capacitances specified on the
datasheet are convenient and easily measured. They relate to
the pin to pin capacitances shown in Figure 7 and described
below.
C
oes
C
res
10
0
10 20
30
40 50 60
70 80 90 100
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 6. IGBT Capacitance versus Collector−Emitter
Voltage Showing Voltage Dependance of Coes and
Cres
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AND9068/D
Q is the total charge required on the gate to raise V to
g
GE
a specified gate voltage. ON Semiconductor devices are
specified at V _=_15_V.
GE
Figure 7. Pin−to−pin Capacitances of the IGBT
Cies + Cge ) Cgc with Cce shorted
C
C
oes + Cgc ) Cce
res + Cgc
Input Capacitance, Cies
Figure 8. Theoretical Gate Charge Curve showing
The input capacitance is made up of the parallel
combination of gate−emitter and gate−collector
capacitances, when the collector and emitter are tied
together. The gate−emitter capacitance is constant, as it
consists mainly of the metal−oxide−semiconductor
V
GP, QG, QGE, and QGC
Gate to Emitter Charge, Qge
is the amount of charge required to reach the plateau
voltage V . This charge contributes to turning on the MOS
channel, at which time the collector−emitter voltage begins
to transition from high to low voltage. The level of V is
dependent on the load current being switched and can be
approximated by determining the V that corresponds to
Q
ge
capacitance. The gate−collector capacitance is
a
GP
combination of a fixed oxide capacitor and a p−n junction
capacitor. This results in a voltage dependence that is
slightly more complex than that of a p−n junction.
GP
GS
Output Capacitance, Coes
the switching current level from the transconductance
curves in Figure 5.
The output capacitance is formed by the parallel
combination of the gate−collector and collector−emitter
capacitances. As mentioned above, the gate−collector
capacitance is voltage dependant. This is also true for the
collector−emitter capacitance. The voltage dependence of
the collector−emitter junction is that of a p−n junction.
Gate to Collector Charge, Qgc
Q
gc
is the amount of charge required to charge the junction
capacitor while the voltage from collector to emitter is
decreasing in the transition between the off−state and
on−state. This plateau corresponds to the charging of what
is also known as the Miller capacitance.
Transfer Capacitance, Cres
The transfer capacitance is composed only of the
gate−collector capacitance. Its role in the device operation
is critical, as it provides negative feedback between the
collector and the gate. This capacitance is responsible for the
plateau on the gate charge curve. The change in
Switching Characteristics
The IGBT switching characteristics are of great
importance because they relate directly to the switching
energy losses of the device. Switching losses can be
substantial, especially at higher frequencies and increasing
temperature, where the switching losses increase.
When voltage is applied to the gate, the input capacitance
collector−emitter voltage forces a current through C
res
which reduces the gate drive current while the collector
voltage is changing.
must first be charged to the threshold voltage, V
. This
GE(th)
Gate Charge, Total, Qg
leads to a delay (t ) before the IGBT collector current
d(on)
Input capacitance is useful, but in terms of gate drive
design, the more important figure of merit is the gate charge.
It is used to size the gate drive components and predict
switching losses in the driver. To measure gate charge the
IGBT gate is driven with a current and the gate voltage
change is monitored versus time. The resulting gate voltage
versus gate charge curve is shown in Figure 8 for a constant
current gate drive signal.
begins to flow. Once the collector current begins to flow, the
depletion layer that blocks the voltage during the off−state
begins to collapse. The voltage drops to the on−state voltage
drop, V . This is illustrated in Figure 9.
CE(sat)
During turn−off, the gate voltage is reduced to zero and
the opposite occurs. The channel for the MOSFET current
is closed and the current begins to drop abruptly. The voltage
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AND9068/D
begins to rise from V
as the charge due to current flow
The switching characteristics are given in the electrical
CE(sat)
is removed. The voltage across the device reaches the supply
voltage, and minority carriers that remain in the device after
turn−off cause a tail current that continues to flow. This is
illustrated in Figure 10.
parametric table for T = 25 and 150°C. These are shown in
J
Table 5.
Table 5. INDUCTIVE SWITCHING ELECTRICAL CHARACTERISTICS OF THE IGBT
Parameter
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Test Conditions
Symbol
Min
Typ
Max
Unit
ns
t
78
30
d(on)
t
r
Turn−off delay time
Fall time
t
130
d(off)
T = 25°C
J
V
= 400 V, I = 15 A
C
CC
t
f
120
R = 22 W
g
V
= 0 V / 15 V
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
0.900
0.300
1.200
76
GE
E
off
mJ
ns
E
ts
t
t
d(on)
t
r
33
Turn−off delay time
Fall time
133
d(off)
T = 150°C
J
V
= 400 V, I = 15 A
CC
C
t
f
223
R = 22 W
g
V
= 0 V / 15 V
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
1.10
0.510
1.610
GE
E
off
mJ
E
ts
voltage and collector current reach 10% of their final
specified value.
Rise Time, tr
The interval between the time the collector reaches 10%
of its specified current value and the time it reaches 90% of
its final value is defined as the rise time.
Turn−on Switching Loss, Eon
The turn−on switching losses are calculated by integrating
the power dissipation (I x V ) over the time interval
C
CE
starting when the collector current reaches 10% of its final
value and ending when the collector−emitter voltage reaches
5% of its peak value.
Turn−off Delay Time, td(off)
t
is the time delay between the falling edge of the gate
d(off)
pulse and the falling edge of the collector current. The
measurement is the time between the point at which the gate
voltage falls to 90% of its maximum value and the collector
current reaches 10% of its final specified value.
Figure 9. Turn−on Switching Illustration Showing the
Definitions of the Turn−on Switching Characteristics
Fall Time, tf
The fall time is defined as the time required for the
collector current to drop from 90% to 10% of its initial value.
Turn−on Delay Time, td(on)
Turn−off Switching Loss, Eoff
t
is the time delay between the rising edge of the gate
d(on)
The turn−off switching energy losses are calculated to
include the overlap of the rising collector−emitter voltage
pulse and the rising edge of the IGBT collector current. The
measurement considers the point at which both the gate
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Total Switching Loss, Ets
The total switching losses comprise the sum of the
turn−on and turn−off switching losses.
Typical switching time and switching energy loss graphs
are given that describe the dependence of the switching
characteristics on a variety of system variables. The
dependence on junction temperature, collector current,
collector−emitter voltage, and gate resistance are all
provided to aid in the design process.
and the falling collector current. Because the IGBT is a
minority carrier device, the collector current continues to
flow after the time where the collector voltage has fully
risen. This residual current, called tail current, eventually
decays to zero. It is customary to add a fixed length of time
to the end of the turn−off time to capture the energy lost
during the entire tail current. This added time is denoted as
xms in Figure 10.
Diode Characteristics
Figure 11. Copackaged IGBT and Freewheeling
Diode
IGBTs are frequently used in applications where the load
is inductive, such as motor control. These applications are
hard switching and require that the IGBT be in parallel with
a
freewheeling diode. ON Semiconductor offers
copackaged IGBT and diode devices. The diode cathode and
IGBT collector are connected together and the diode anode
and IGBT emitter are also connected, as shown in Figure 11.
The freewheeling diode takes the place of the body diode
that otherwise exists in a power MOSFET. For IGBTs that
are copackaged with a freewheeling rectifier diode, the
datasheet will also include electrical specifications for the
diode, as shown in Table 6.
Figure 10. Turn−off Switching Illustration Showing
the Definitions of the Turn−off Switching
Characteristics
Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE
Parameter
DIODE CHARACTERISTIC
Forward voltage
Test Conditions
Symbol
Min
Typ
Max
Unit
V
= 0 V, I = 15 A
F J
V
t
1.6
1.6
1.85
V
GE
F
F
V
GE
= 0 V, I = 15 A, T = 150°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
270
350
5
ns
nc
A
rr
T = 25°C
J
I = 15 A, V = 200 V
Q
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
350
1000
7.5
ns
nc
A
T = 125°C
J
Q
I = 15 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Forward Voltage, VF
emitter terminal and the emitter−collector (anode−cathode)
voltage is measured.
Forward voltage is an important parameter in hard
The forward voltage of the rectifier is measured while the
IGBT gate and emitter terminals are tied together, ensuring
the IGBT is in its off−state. A forcing current enters the
switching applications. V is specified in the electrical table
F
http://onsemi.com
8
AND9068/D
for a given current and is specified at T = 25 and 150°C. The
J
datasheet also includes a graph showing the I −V
F
F
relationship for a typical part at T = −40, 25, and 150°C, as
J
shown in Figure 12.
35
−40°C
30
25
20
25°C
15
150°C
10
5
0
0
0.5
1
1.5
2
2.5
V , FORWARD VOLTAGE (V)
F
Figure 13. Diode Reverse Recovery Illustration
Showing the Definitions of the Reverse Recovery
Characteristics
Figure 12. Diode Forward Characteristic Curves for
TJ_=_−40, 25, and 1505C
Reverse Recovery Time, trr
The reverse recovery time, t , defines the time the diode
takes to enter the reverse blocking state after conducting in
the forward direction. It is defined as the length of time
required for the reverse current to return to 10% of its peak
Reverse Recovery Charge, Qrr
The amount of charge that is recovered from the diode
during turn−off is referred to as reverse recovery charge, Q .
It is calculated by taking the integral of the reverse recovery
rr
rr
current over the time period, t .
rr
reverse value (I ). It is measured from the point in time
rrm
where the diode current crosses zero. The time period is
labeled in Figure 13.
Reverse Recovery Current, Irrm
I
is the peak current reached during diode turn off. I
rrm
rrm
depends on the initial forward diode current and the rate of
change of the diode current, dI/dt, used to turn the diode off.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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AND9068/D
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