NHPM220T3G [ONSEMI]
Surface Mount Ultra Fast Power Rectifier;
| 型号： | NHPM220T3G |
| 厂家： | 
ONSEMI |
| 描述： | Surface Mount Ultra Fast Power Rectifier |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NHPM220, NRVHPM220
Surface Mount
Ultra Fast Power Rectifier
POWERMITE® Power Surface Mount
Package
www.onsemi.com
This ultrafast POWERMITE provides soft recovery fast switching
performance in a compact thermally efficient package. The advanced
packaging techniques provide for a very efficient micro−miniature
space−saving surface mount rectifier. With its unique heatsink design,
the POWERMITE offers thermal performance similar to the SMA
while being 50% smaller in footprint area.
ULTRAFAST
RECTIFIER
2.0 AMPERE, 200 VOLTS
Features
• Fast Soft Switching for Reduced EMI and Higher Efficiency
• Low Profile − Maximum Height of 1.1 mm
CATHODE
2
• Small Footprint − Footprint Area of 8.45 mm
ANODE
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
POWERMITE
CASE 457
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING DIAGRAM
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
M
P22G
1
2
Mechanical Characteristics:
M
= Date Code
• POWERMITE is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
P22 = Device Code
G
= Pb−Free Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
ORDERING INFORMATION
260°C Maximum for 10 Seconds
• MSL 1
†
Device
NHPM220T3G
Package
Shipping
POWERMITE 12000 / Tape &
(Pb−Free) Reel
Applications
• Automotive LED Lighting
• Engine Control
NRVHPM220T3G POWERMITE 12000 / Tape &
(Pb−Free) Reel
• Freewheeling Diode Where Space is at a Premium
• Flat Panel Display
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• Infotainment and Other Space Constrained Center−stack
Applications
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 2
NHPM220/D
NHPM220, NRVHPM220
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
200
V
RRM
V
RWM
V
R
Average Rectified Forward Current
(T = 155°C)
L
I
2.0
4.0
A
A
O
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 153°C
R
L
Non−Repetitive Peak Surge Current
I
40
A
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
T
stg
, T
J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
12
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
Characteristic
Y
JCL
R
75
q
q
JA
JA
R
260
Symbol
Value
Unit
V
F
V
Maximum Instantaneous Forward Voltage (Note 4)
1.0
(I = 1.0 A, T = 25°C)
F
J
1.05
0.86
0.90
(I = 2.0 A, T = 25°C)
F
J
(I = 1.0 A, T = 125°C)
F
J
(I = 2.0 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 4)
I
R
mA
(Rated dc Voltage, T = 25°C)
0.5
35
J
(Rated dc Voltage, T = 125°C)
J
Reverse Recovery Time
t
rr
50
ns
I = 2.0 A; V = 30 V; dl/dt = 50 A/ms
F
R
T = −40°C to 150°C
J
2
2
2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board.
2
3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NHPM220, NRVHPM220
TYPICAL CHARACTERISTICS
100
10
1
100
10
1
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
0.1
0.1
T = 25°C
A
T = 25°C
A
0.01
0.01
T = −40°C
A
T = −40°C
A
0.001
0.001
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
T = 150°C
A
T = 175°C
T = 175°C
A
A
T = 125°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
A
1.E−08
1.E−09
1.E−11
1.E−12
T = −40°C
A
0
20 40 60 80 100 120 140 160 180 200
20 40 60 80 100 120 140 160 180 200
V , INSTANTANEOUS REVERSE VOLTAGE (V)
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T = 25°C
J
DC
Square Wave
100
0.5
0
R
= 12°C/W
q
JC
10
0
20 40 60 80 100 120 140 160 180 200
20
40
60
80 100 120 140 160 180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NHPM220, NRVHPM220
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
T = 175°C
J
I /I = 20
PK AV
I /I = 10
PK AV
I
/I = 5
PK AV
dc
0.5
0
Square Wave
0
0.5
1.0
1.5
2.0
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
1000
100
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
10
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
10
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
www.onsemi.com
4
NHPM220, NRVHPM220
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
F
C
−A−
M
S
S
C
0.08 (0.003)
T
B
J
S
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.081
0.086
0.045
0.027
0.039
PIN 1
A
B
C
D
F
1.75
1.75
0.85
0.40
0.70
-0.05
0.10
3.60
0.50
1.20
2.05 0.069
2.18 0.069
1.15 0.033
0.69 0.016
1.00 0.028
−B−
K
PIN 2
H
J
+0.10 -0.002 +0.004
0.25 0.004
3.90 0.142
0.80 0.020
1.50 0.047
0.010
0.154
0.031
0.059
R
K
L
L
R
S
0.50 REF
0.019 REF
J
D
H
M
S
S
C
0.08 (0.003)
T
B
−T−
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.762
0.030
0.105
2.54
0.100
1.27
0.050
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NHPM220/D
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